JPS58175885A - 半導体レーザ装置の製造方法 - Google Patents

半導体レーザ装置の製造方法

Info

Publication number
JPS58175885A
JPS58175885A JP57057269A JP5726982A JPS58175885A JP S58175885 A JPS58175885 A JP S58175885A JP 57057269 A JP57057269 A JP 57057269A JP 5726982 A JP5726982 A JP 5726982A JP S58175885 A JPS58175885 A JP S58175885A
Authority
JP
Japan
Prior art keywords
layer
waveguide path
active layer
region
optical waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57057269A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0155589B2 (enrdf_load_stackoverflow
Inventor
Hideto Furuyama
英人 古山
Yutaka Uematsu
豊 植松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57057269A priority Critical patent/JPS58175885A/ja
Publication of JPS58175885A publication Critical patent/JPS58175885A/ja
Publication of JPH0155589B2 publication Critical patent/JPH0155589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57057269A 1982-04-08 1982-04-08 半導体レーザ装置の製造方法 Granted JPS58175885A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57057269A JPS58175885A (ja) 1982-04-08 1982-04-08 半導体レーザ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57057269A JPS58175885A (ja) 1982-04-08 1982-04-08 半導体レーザ装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58175885A true JPS58175885A (ja) 1983-10-15
JPH0155589B2 JPH0155589B2 (enrdf_load_stackoverflow) 1989-11-27

Family

ID=13050805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57057269A Granted JPS58175885A (ja) 1982-04-08 1982-04-08 半導体レーザ装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58175885A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121487A (ja) * 1974-08-16 1976-02-20 Hitachi Ltd Handotaireeza
JPS52144989A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Semiconductor light emitting device
JPS53144693A (en) * 1977-05-23 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121487A (ja) * 1974-08-16 1976-02-20 Hitachi Ltd Handotaireeza
JPS52144989A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Semiconductor light emitting device
JPS53144693A (en) * 1977-05-23 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Also Published As

Publication number Publication date
JPH0155589B2 (enrdf_load_stackoverflow) 1989-11-27

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