JPS58169920A - Manufacturing device for semiconductor - Google Patents
Manufacturing device for semiconductorInfo
- Publication number
- JPS58169920A JPS58169920A JP57053545A JP5354582A JPS58169920A JP S58169920 A JPS58169920 A JP S58169920A JP 57053545 A JP57053545 A JP 57053545A JP 5354582 A JP5354582 A JP 5354582A JP S58169920 A JPS58169920 A JP S58169920A
- Authority
- JP
- Japan
- Prior art keywords
- wedge
- bonding
- pellet
- electrode
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
- H01L2224/78314—Shape
- H01L2224/78317—Shape of other portions
- H01L2224/78318—Shape of other portions inside the capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体製造装置に関し、特にワイヤボンディン
グ装!−関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor manufacturing equipment, and particularly to wire bonding equipment! -Related.
第1図は樹脂モールド型の半導体装『雷の一例を示すも
ので、lは半導体ペレット2を載散固定し放熱根を兼ね
た基板で、1aは取付は用の穴である。3は図示例では
3本−組のリードで、中央のリード3aの一端を基板I
K亀り的に接続り、lJ−ド3aの両側にリード3b、
3cを一端を半導体ペレット2に近接して平行配置して
いる。4゜4け半導体ペレット2上の1tf&とリード
3b 、 3cとをそれぞれ接続した金属細線、5け半
導体ペレット2を含む主要部分で外装した樹脂モールド
部を示す。FIG. 1 shows an example of a resin-molded semiconductor device, in which 1 is a substrate on which semiconductor pellets 2 are scattered and fixed and also serves as a heat dissipation root, and 1a is a hole for mounting. 3 is a set of three leads in the illustrated example, and one end of the center lead 3a is connected to the board I.
Connect in a K-shaped manner, with leads 3b on both sides of lJ-do 3a,
3c is arranged in parallel with one end close to the semiconductor pellet 2. 4° The resin molded part is covered with the main parts including the 5-piece semiconductor pellet 2 and the thin metal wires connecting the 1tf& on the 4-piece semiconductor pellet 2 and the leads 3b and 3c, respectively.
この半導体装置は、一般に平板状金属板を打抜き複数組
のリード3を連結片で一体化したリードフレームを、複
数の基板1tt連結片で一体化した基板達に一体化した
ものを用V・、基板l上に半田等を介して半導体ペレッ
ト2を肯定するマウントL程、半導体ペレット2とリー
ド3b、3cとを金属線lIM+、+にて電気的に接続
するワイヤポンディング工程、半導体ペレット2を含む
主要部分を樹脂で被智して外装する樹脂モールド工程、
リードフレーム及び基板連の連結片を切断除去し個々の
半導体装置に分離する工程、電気的特性や外観を検査す
る工程を経て製造される。This semiconductor device generally includes a lead frame formed by punching a flat metal plate and integrating a plurality of sets of leads 3 with connecting pieces, and a plurality of substrates integrated with connecting pieces. As the semiconductor pellet 2 is mounted on the substrate l via solder or the like, a wire bonding process is performed to electrically connect the semiconductor pellet 2 and the leads 3b, 3c with metal wires lIM+, +. A resin molding process in which the main parts are covered and covered with resin,
It is manufactured through a process of cutting and removing the connection piece between the lead frame and the board and separating it into individual semiconductor devices, and a process of inspecting the electrical characteristics and appearance.
ところで、ボンデJング工程では、位置決めされ加熱さ
れた基板運上に半田を供給し、溶融半田上に位置決めは
れた半導体ペレットを供給して固定されるが、基板連は
半導体ペレットの供給位置の前後でも加熱状態であるた
め、半導体ペレットを供給した後で、基板上で半導体ペ
レットが41’r 計ずれや同転をすることがあった。By the way, in the bonding process, solder is supplied to a positioned and heated substrate, and semiconductor pellets that have been positioned and swelled are supplied onto the molten solder to be fixed. Because the semiconductor pellets were heated both before and after, the semiconductor pellets sometimes shifted or rotated by 41'r on the substrate after being supplied.
そのため続くワイヤボンディング工程では半導体ペレッ
ト2のt&の位@検出をしている。ここで、リードフレ
ームのリード3b、3cの位置ずれは少なく半導体ペレ
ット2の面積に此しても十分大きいため、固定座標と做
されるため、半導体ペレット2のlE&位置が決まると
、金属細線4゜4のガイド方向が決定される。Therefore, in the subsequent wire bonding process, the t& position of the semiconductor pellet 2 is detected. Here, since the positional deviation of the leads 3b and 3c of the lead frame is small and the area of the semiconductor pellet 2 is sufficiently large, the coordinates are considered to be fixed, so that once the lE & position of the semiconductor pellet 2 is determined, A guide direction of 4° is determined.
ところで金属細fj1414としてアルミニウムワイヤ
を用いたワイヤボンディング装置の一例を第2図から説
明すると、6けホーンで、一端に金属細線4をガイドし
かつ被ボンデイング物(半導体ペレット2の電極及びリ
ード3b、30の−り?lii部)に金属細線を押圧す
るウェッジ7を、他端にウェッジ7に超音波振動を賦与
する超音波振動子8をそれぞれ島1定し、中間部より支
軸9を水平に突設している。また支軸部分より後方に保
合部10を妙技形成している。11はホーン6の支軸9
を支持すると共に、係合部10を押圧させてボーン6を
回動させウェッジ7を上下動させるカム12の軸13を
支持する支持台、14は支持台11を支持しXY方向に
移動させるXYテーブルを示す。By the way, an example of a wire bonding apparatus using an aluminum wire as the thin metal fj1414 will be explained with reference to FIG. A wedge 7 that presses a thin metal wire is placed at one end of the wedge 7, and an ultrasonic vibrator 8 that applies ultrasonic vibration to the wedge 7 is placed at the other end of the wedge. It is protruding from the Furthermore, a retaining portion 10 is formed behind the support shaft portion. 11 is the support shaft 9 of the horn 6
14 supports the shaft 13 of the cam 12 that presses the engaging portion 10 to rotate the bone 6 and move the wedge 7 up and down. Show table.
この装置は、基板l上の半導体ペレット2の電極位置を
検出L1その検出データに基づ−てXYテーブル14が
ウェッジ7を半導体ペレッ) 2−Lに移動させカム1
2全回転はせて係合部10の抑圧を解除しホーン6を支
軸9を中心に一1転させてウェッジ7を半導体ペレット
2上に降下させ、金属細#14の先端部を半導体ペレッ
ト2の電極に押fF、 L 、超音波振動子8を作動さ
せて超音波ボンディングを行い、カムにより保合部10
を押圧してウェッジ7を上昇させ、XYテーブル14の
動作により、金属細線4?ガイドしつつウェッジ7をリ
ード3b上に移動させ、さらにカム12を同転させて保
合部1oの抑圧を解除しウェッジ7をリード3 b−)
、に降下させ、金属細線4の中間部を押圧し、超音波振
動子8を作動させて超音波ボンディングを行い、その後
ウェッジ7を−E昇させて金属細線4を切断しボンディ
ングを光子する。同様にして半導体ペレット2の他の¥
Lmと他のり一ド3Cとの間のワイヤボンディングを行
う。This device detects the position of the electrode of the semiconductor pellet 2 on the substrate 1.Based on the detected data, the XY table 14 moves the wedge 7 to the semiconductor pellet 2-L, and the cam 1
2. Release the suppression of the engaging part 10 by rotating the horn 6 fully around the spindle 9, lowering the wedge 7 onto the semiconductor pellet 2, and attaching the tip of the metal thin #14 to the semiconductor pellet. 2 electrodes are pressed fF, L, the ultrasonic vibrator 8 is operated to perform ultrasonic bonding, and the retaining portion 10 is bonded by a cam.
is pressed to raise the wedge 7, and by the operation of the XY table 14, the thin metal wire 4? While guiding, the wedge 7 is moved onto the lead 3b, and the cam 12 is rotated simultaneously to release the suppression of the retaining portion 1o, and the wedge 7 is moved onto the lead 3b-).
, presses the middle part of the thin metal wire 4, activates the ultrasonic vibrator 8 to perform ultrasonic bonding, and then raises the wedge 7 by -E to cut the thin metal wire 4 and perform photon bonding. Similarly, other ¥ of semiconductor pellet 2
Wire bonding is performed between Lm and another board 3C.
ここでウェッジ7の下端部形状の一例を第3図及び第4
図に示すと、7aは下端面に金属細線4をガイドし押圧
する溝7bを形成した金属細線抑圧部、7Cは金属細線
4を金属細線押Hパ部7bまでガイドする孔7dを設け
た金和細糾方イド部である。Here, an example of the shape of the lower end of the wedge 7 is shown in FIGS. 3 and 4.
As shown in the figure, 7a is a thin metal wire suppressing part in which a groove 7b for guiding and pressing the thin metal wire 4 is formed on the lower end surface, and 7C is a metal wire suppressing part with a hole 7d for guiding the thin metal wire 4 to the thin metal wire presser part 7b. This is the Japanese paper style section.
このウェッジ7の溝7b方向、R11ちホーン6の軸方
向は金属細線4のガイド方向と一致させている0
そのため、第1のボンディング後、金絖細線4は第5図
に示すようにウェッジ7の押R1部7aの147 b端
部でガイドされS第2のボンディング位4゛では第6図
に示すように、金が細線4の中間部は溝7b内に暇”ま
り、良好なボンディングができる0
即ち、第7図に示すようにリード3bのボンデ半導体ペ
レット2(図示点線)の電−の位置を(fo+ffo)
とすれば、XYテーブル14を原点からX方向に(zo
xo)、Y方向に(ffoYo)移動させることにより
ウェッジ7を半導体ペレット2のxi−hに位置させる
ことができる。この点からXYテーブル14を逆接」;
させウェッジ7を原点に戻す。この時ウェッジ7の溝7
bの方向θ0けtan −’((”a Xo)/1f
fo Yo))で、半導体ぺり、 7ト2[−及びリ
ード3b上で同じで、金朽、細線4が溝7bからはずれ
ることけない。The direction of the groove 7b of this wedge 7, the axial direction of the horn 6, and R11 are made to coincide with the guide direction of the thin metal wire 4. Therefore, after the first bonding, the thin wire 4 is attached to the wedge 7 as shown in FIG. At the S second bonding position 4, which is guided by the 147 b end of the press R1 part 7a, as shown in FIG. As shown in FIG.
Then, move the XY table 14 from the origin in the X direction (zo
xo) and in the Y direction (ffoYo), the wedge 7 can be positioned at xi-h of the semiconductor pellet 2. Connect the XY table 14 in reverse from this point.
and return wedge 7 to its origin. At this time, groove 7 of wedge 7
Direction of b θ0 digit tan −'((”a Xo)/1f
Fo Yo)), the same is true on the semiconductor area 7 to 2 [- and lead 3b, and the thin wire 4 never comes off from the groove 7b.
一力半導体ペレット2が第7図、図示実線で示すようV
こ正規位置から大きくずれて、電極が(xl。As shown in FIG. 7 by the solid line, the semiconductor pellet 2 is
This position is greatly deviated from the normal position, and the electrode (xl.
ff+)に位置すると、XYテーブル14を原点からX
方向に(t+ −’ Xo )、Y方向K(3’+Yo
)移1’rIさせることKよりウェッジ7を半導体ペレ
ット2の’N 椋−FK位「1させることができる。そ
してこの点でボンディング後、XYテーブル14を逆移
動させてウェッジ7を原点に位置させることかできる。ff+), move the XY table 14 from the origin to
(t+ -'Xo), Y direction K (3'+Yo
) By moving 1'rI, the wedge 7 can be moved to the 'N-FK' position of the semiconductor pellet 2.After bonding at this point, the XY table 14 is moved backward to position the wedge 7 at the origin. I can do it.
しかしながら金属細線のガイド方向θ、はtM−’((
’+−Xo)/(3’+ Yo))となり、ウェッジ
7の溝7bの方向θ0との間にずれを生じ、リード側で
のボンディング時に、金属軸117J4の一部がウェッ
ジ7の溝7bからはずれ、押圧部7aの突部で金属細線
4を圧潰しボンディング強度を低下させ、樹脂モールド
工程等で金属軸&14に押IF力が加えられると断線す
ることがあった。However, the guide direction θ of the thin metal wire is tM-'((
'+-Xo)/(3'+Yo)), and a deviation occurs between the direction θ0 of the groove 7b of the wedge 7, and when bonding on the lead side, a part of the metal shaft 117J4 crosses the groove 7b of the wedge 7. When the thin metal wire 4 is crushed by the protrusion of the pressing portion 7a, the bonding strength is reduced, and the wire may be broken when a pressing IF force is applied to the metal shaft &14 in a resin molding process or the like.
また金属軸lR4のガイド方向θ、が大きすきると溝7
bから金属細線4がはずれ、リード側でのボンディング
ができないこともあった。Also, if the guide direction θ of the metal shaft lR4 is too large, the groove 7
In some cases, the thin metal wire 4 was detached from b, making it impossible to perform bonding on the lead side.
これは金属細線4が溝7bに完全に収容された状態でガ
イドされるのではなく、溝7bの端部に引っかけられた
状態でガイドされるため、ガイド方向blが溝7bの方
向θ。からずれると、金属細線4が溝7bからけずれ易
くなやためである。This is because the thin metal wire 4 is not guided while being completely accommodated in the groove 7b, but is guided while being hooked on the end of the groove 7b, so that the guiding direction bl is the direction θ of the groove 7b. This is because if the metal wire 4 deviates from the groove 7b, the thin metal wire 4 is likely to come off the groove 7b.
本発明は上記問題点に鉦み提案されたもので、金属細線
を完全にガイドし、確実にボンディングできる半導体製
造装置を提供する。The present invention has been proposed to address the above-mentioned problems, and provides a semiconductor manufacturing apparatus that can completely guide a thin metal wire and perform bonding reliably.
乎下、本発明を第8図から説明する。図において、第2
し1と同一符号は同一物を示し説明を省略する。本発明
は支持台11とXYテーブル14の間に支持台11を水
平方向に回転させるターンテーブル15を設けたこkを
特徴とする。The present invention will now be explained with reference to FIG. In the figure, the second
The same reference numerals as 1 indicate the same parts, and the explanation will be omitted. The present invention is characterized in that a turntable 15 for horizontally rotating the support base 11 is provided between the support base 11 and the XY table 14.
以下、この装置の動作をia u/+する。先ず第9図
点線で示すように半導体ペレット2が正規位「−にある
場合、リード3bの原点(Xo + Yo )から半導
体へl/フットの電極位訂(’o、 ’io )までの
X、Y方向の距ME(to Xo) + (ffo
Yo)を検出してXYテーブル14を作動させ、ウェ
ッジ7を半導体ペレット2の電極上に移動させると同時
に、原点とtfIkのなす角θ。(θo−taa−1(
go Xo)/(ffo−Yo))を求めターンテー
プを15を角度θ0回転させる。Below, the operation of this device will be described as ia u/+. First, when the semiconductor pellet 2 is in the normal position "-" as shown by the dotted line in FIG. , distance in the Y direction ME (to Xo) + (ffo
Yo) is detected, the XY table 14 is operated, and the wedge 7 is moved onto the electrode of the semiconductor pellet 2. At the same time, the angle θ between the origin and tfIk is detected. (θo-taa-1(
go Xo)/(ffo-Yo)) and rotate the turn tape 15 by an angle θ0.
これKより、金属細線4のガイド方向とウェッ’; 7
(7)iQj ’7 bの方向が一致L1電極側ポン
ディング後、リード側に金属細線4をガイドする際に金
〆細IIMが溝7bからはずれることがなく、リード側
でも確実にボンディングでキル。From this K, the guide direction of the thin metal wire 4 and the wed'; 7
(7) The direction of iQj '7 b matches. After bonding on the L1 electrode side, when guiding the thin metal wire 4 to the lead side, the gold-finished IIM will not come off from the groove 7b, and the bonding will ensure kill on the lead side as well. .
また第9図実線で示すように半導体ペレット2が位置ず
れしている場合には、リード3bの原点(xo l y
o)から半導体ペレット2の’thh−位散(xl。Further, if the semiconductor pellet 2 is misaligned as shown by the solid line in FIG. 9, the origin of the lead 3b (
o) to 'thh-dispersion (xl.
y+)tでのX、Y方向の距離(”+ Xo)、(3
’+ Yo)を検出してXYテーブル14を作¥1+
#せ、ウェッジ7を半導体ペレット2の電極上に移動
させると同時に、原点と電極のなす角θ璽(θr −t
an−’ (’+ −X。)/(’h Yo))を求
めターンテーブル15を角lθ佑回転させる。y+) Distance in the X and Y directions at t ("+ Xo), (3
'+ Yo) and create XY table 14 ¥1+
While moving the wedge 7 onto the electrode of the semiconductor pellet 2, the angle θr (θr −t
An-'('+-X.)/('h Yo)) is determined and the turntable 15 is rotated by an angle lθ.
これによっても、金属軸ll114のガイド方向とウェ
ッジ7の溝7bの方向が一致し、金枦細綾4が溝ワbか
らはずれることがなく、確実にボンディングできる。With this arrangement as well, the guide direction of the metal shaft 114 and the direction of the groove 7b of the wedge 7 match, and the gold hazel twill 4 does not come off from the groove b, allowing for reliable bonding.
このように本発明によれば、半導体ペレット2が正規位
置から大きく位置ずれしても、金属細線4のガイド方向
とウェッジ7の溝7bの方向を一致させることができ、
確実VCボンディングでき、断線を■ノJ止でき、信頼
性の高い半導体装I6を実現できる。As described above, according to the present invention, even if the semiconductor pellet 2 is largely displaced from its normal position, the guiding direction of the thin metal wire 4 and the direction of the groove 7b of the wedge 7 can be made to match.
VC bonding can be performed reliably, disconnection can be prevented, and a highly reliable semiconductor device I6 can be realized.
また第1図半導体装置の半導体ペレット2とり。Further, FIG. 1 shows a semiconductor pellet 2 of a semiconductor device.
−ド3b、3crl+1のようにガイド方向の異なるボ
ンディングも一台の装置で可能である。Bonding with different guide directions as in -dodes 3b and 3crl+1 is also possible with one device.
第1図は半導体装置の一例を示す一部透視乎面V、第2
しはワイヤボンディング装置の従来例を示す01j面図
、第3図はウェッジの一例を示す要部−面図、第4スは
第3ド1正面図、φ、5図乃至第7図は第2ν装散の動
作説明図、第8図は本分11Jによるワイヤボンディン
グ装置の一例を示す側面図、第9図は第8M袋詰の動作
説明する半導体装置の要部拡大平面図を示す。
4・・・・・・金属細線、 6・・・・・・ホーン
、7・・・・・・ウェッジ、 8・・・・・・超音
波振動子、14・・・・・ xyテーブル。
15・・・・・・ ターンテーブル。FIG. 1 shows an example of a semiconductor device in a partially transparent view.
Figure 3 is a side view of the main part showing an example of a wedge, Figure 4 is a front view of the third door 1, φ, Figures 5 to 7 are FIG. 8 is a side view showing an example of the wire bonding apparatus according to the main part 11J, and FIG. 9 is an enlarged plan view of the main part of the semiconductor device to explain the operation of the 8M bagging. 4...Thin metal wire, 6...Horn, 7...Wedge, 8...Ultrasonic vibrator, 14...XY table. 15... Turntable.
Claims (1)
細線を押圧するウェッジを、他端にウェッジに超音波振
動を賦与する超音波振動子をそれぞれ固定したホーンを
、XY方向並びにθ方向に移動自在に配置したことを特
徴とする半導体製造装置。A wedge that guides the thin metal wire and presses it against the object to be bonded is fixed to one end, and an ultrasonic vibrator that imparts ultrasonic vibration to the wedge is fixed to the other end of the horn, which can be moved freely in the XY direction and the θ direction. A semiconductor manufacturing device characterized in that it is arranged in a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57053545A JPS58169920A (en) | 1982-03-30 | 1982-03-30 | Manufacturing device for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57053545A JPS58169920A (en) | 1982-03-30 | 1982-03-30 | Manufacturing device for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58169920A true JPS58169920A (en) | 1983-10-06 |
Family
ID=12945766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57053545A Pending JPS58169920A (en) | 1982-03-30 | 1982-03-30 | Manufacturing device for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58169920A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519372A (en) * | 1974-07-12 | 1976-01-26 | Hitachi Ltd |
-
1982
- 1982-03-30 JP JP57053545A patent/JPS58169920A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519372A (en) * | 1974-07-12 | 1976-01-26 | Hitachi Ltd |
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