JPS58168268A - Lead frame for semiconductor - Google Patents

Lead frame for semiconductor

Info

Publication number
JPS58168268A
JPS58168268A JP5081082A JP5081082A JPS58168268A JP S58168268 A JPS58168268 A JP S58168268A JP 5081082 A JP5081082 A JP 5081082A JP 5081082 A JP5081082 A JP 5081082A JP S58168268 A JPS58168268 A JP S58168268A
Authority
JP
Japan
Prior art keywords
lead frame
aluminum
semiconductor
alloys
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5081082A
Other languages
Japanese (ja)
Inventor
Takao Fujizu
隆夫 藤津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5081082A priority Critical patent/JPS58168268A/en
Publication of JPS58168268A publication Critical patent/JPS58168268A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an inexpensive lead frame for a semiconductor by forming the lead frame of a material which contains not less than 90% of aluminum. CONSTITUTION:A material is composed, for example, of an alloy of aluminum (90%) and copper (10%). Since the lead frame of this composition contains a great deal of base metal (aluminum), the material cost is remarkably reduce with 13-22% of elongation rate, 130-155Hv of hardness, thereby providing material characteristics to satisfy the pressing accuracy. Since it has preferable bondability for a gold wire and an aluminum wire, it is not necessary to provided gold plating or silver plating as the practiced in the conventional one.

Description

【発明の詳細な説明】 〔発明Ｏ技術分野〕 この発明は半導体装置の馬造に用いられる半導体用リー
ドフレームに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor lead frame used for manufacturing semiconductor devices.

〔発明の！！Ｌｆｒ的背景〕[Invention! ! Lfr-like background]

半導体用リードフレーム拡、プレス成形加工によりａｌ
ｌ造されるが、その際精密性が要求される丸め所定の強
靭性が必要であゐ、この強靭性については、一般にその
材料の伸びと硬さから判断され、伸び率１０ｇ１１以上
、硬さ１３０Ｈマ以上となっている。Expanding lead frames for semiconductors, Al
However, when doing so, precision is required for rounding, and a certain level of toughness is required.This toughness is generally judged from the elongation and hardness of the material, and the elongation rate is 10g11 or more, the hardness is It is over 130 hours long.

従来、半導体用リードフレームの材料としては、ニッケ
ル及びニッケル合金が利用されて龜え・ニッケル合金と
して杜、４２合金で代表されるニッケル・鉄合金、エバ
ールの名称で知られる−・ニッケル・コバルト合金が主
であり、他に熱的特性を考慮して銅合金も利用されてい
る。Conventionally, nickel and nickel alloys have been used as materials for semiconductor lead frames. Nickel alloys are commonly known as nickel alloys, nickel-iron alloys such as 42 alloys, and nickel-cobalt alloys known as EVAL. Copper alloys are also used in consideration of their thermal properties.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、上記材料はいずれも高価格でＴｏり、従
って半導体装置も高価格となる欠点があった。However, all of the above-mentioned materials have the disadvantage that they are expensive and therefore the semiconductor devices are also expensive.

〔発明の目的〕[Purpose of the invention]

この発明は上記実情に鎌みてなされたもので、その目的
は、安価な半導体用リードフレームを提供することにあ
る。This invention was made in consideration of the above-mentioned circumstances, and its purpose is to provide an inexpensive lead frame for semiconductors.

〔発＠Ｏ概畳〕[Departure @ O Sotata]

この発明は、ｓｏｎ以上のアルミニウムを含む材料て半
導体用リードフレームを形成するものである。This invention forms a lead frame for a semiconductor using a material containing aluminum of 100% or higher.

〔発ｌ！ＪｉＯｖ＆施例〕[Release! JiOv&Examples]

以下、図面を参照してこ０発明の一実施例を説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

８面は半導体用リードフレームｌを示すもので、その材
料樽威紘、例えばアルｉｘ−ラム（ＩＯｓ）と鋼（１０
１）Ｏ合金となりている。The 8th page shows a lead frame for semiconductors, and its materials include aluminum (IOs) and steel (10
1) O alloy.

このような構成Ｏリードフレーム１にあっては、 ■　卑金属（アルミニウム）が多量に含有されている丸
め、従来の二、ケル・鉄合金、鉄・ニッケル・コバルト
合金及び銅合金に比べて格段に材料費が安くなる。In the O lead frame 1 having such a configuration, ■ round metals containing a large amount of base metal (aluminum) are much more effective than conventional metal alloys, iron-nickel-cobalt alloys, iron-nickel-cobalt alloys, and copper alloys. Material costs are lower.

■　伸び率１３〜２２１６、硬さ１３０〜１５５Ｈマで
あ゛り、ブレス加工精度を満足させる材料特性を有して
いる。(2) It has an elongation rate of 13 to 2216, a hardness of 130 to 155H, and has material properties that satisfy pressing accuracy.

■　従来の鉄・二、ケル系材料に比べて熱伝導性が良好
である。■ It has better thermal conductivity than conventional iron/nickel-based materials.

■　がンディングエ鴨において、ワイヤがンディンダ部
分に貴金属め０きが不要である。すなわち、アルミニウ
ムは、ベレット配線材料に使用されており、上記のよう
−な材料組成では、金ワイヤ、アルきニウムワイヤに対
してゲンディング性ｔｊＬ好であるため、従来のような
金めり魯、鍋めり亀は不要である。■ No precious metal plating is required at the end of the wire. That is, aluminum is used as a bullet wiring material, and the material composition as described above has good gendering properties with respect to gold wire and aluminum wire. Nabemerikame is not necessary.

■　モールド時に金蓋でプレスした場合、従来のリード
フレームでは樹脂ば）が発生するが、この発明のリード
フレームでは樹脂ば９は発生しない。(2) When pressing with a metal lid during molding, resin bubbles (9) occur in conventional lead frames, but resin bubbles (9) do not occur in the lead frame of the present invention.

等の種々の利点を有している。It has various advantages such as:

なお、上記実施例においては、アルミニウムの含有率を
９０−としたが、それ以上含有させるようにしてもよい
。また、その組成はアルミニウム・銅以外でも、アルミ
ニウム・シリコン、あるい拡アルミニウム・亜鉛・マン
ボン等種々可能であり、賛はアルミニウムが９０ｓ以上
含有されていればよい、アルミニウム・シリコンの場合
は伸び率１０嚢、ａさ１４０軸、またアルミニウム・亜
鉛・マンＩンＯ場合は、伸び率１１〜１５哄、硬″：５
１３０〜１７０Ｈｖ（Ｄｉｅ性が得られ九。In the above embodiment, the aluminum content was set to 90-90, but it may be contained higher than that. In addition, the composition can be other than aluminum/copper, such as aluminum/silicon or expanded aluminum/zinc/manbon, etc., and it is sufficient that the aluminum content is 90s or more, and in the case of aluminum/silicon, the elongation rate 10 capsules, a diameter of 140 axes, and in the case of aluminum, zinc, and man-I O, elongation rate is 11 to 15 g, hardness: 5
130-170Hv (Die property was obtained.

〔発明Ｏ効果〕　′□ 以上のようにこの発明によれば、安価かつ従来のリード
フレームに比べて種々０８点を有する中部体用リードフ
レームを提供できる。[Effects of the Invention O] '□ As described above, according to the present invention, it is possible to provide a lead frame for a middle body that is inexpensive and has various 08 points compared to the conventional lead frame.

【図面の簡単な説明】[Brief explanation of the drawing]

図面はこＯ発ｒｓｏ−実施例に係る半導体用リードフレ
ームｏ皐面図である。The drawing is a perspective view of a semiconductor lead frame according to an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] ９０畳以上のアルミニウムを含む材料で形成され九こと
を特徴とする半導体用リードフレーム・A lead frame for semiconductors characterized by being made of a material containing aluminum with a thickness of 90 tatami or more.
JP5081082A 1982-03-29 1982-03-29 Lead frame for semiconductor Pending JPS58168268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5081082A JPS58168268A (en) 1982-03-29 1982-03-29 Lead frame for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5081082A JPS58168268A (en) 1982-03-29 1982-03-29 Lead frame for semiconductor

Publications (1)

Publication Number Publication Date
JPS58168268A true JPS58168268A (en) 1983-10-04

Family

ID=12869114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5081082A Pending JPS58168268A (en) 1982-03-29 1982-03-29 Lead frame for semiconductor

Country Status (1)

Country Link
JP (1) JPS58168268A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190966A (en) * 1985-02-20 1986-08-25 Hitachi Ltd Semiconductor device
JPH0429828U (en) * 1990-06-29 1992-03-10
JP2006212301A (en) * 2005-02-07 2006-08-17 Tana-X:Kk Merchandise display hanger

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190966A (en) * 1985-02-20 1986-08-25 Hitachi Ltd Semiconductor device
JPH0429828U (en) * 1990-06-29 1992-03-10
JP2006212301A (en) * 2005-02-07 2006-08-17 Tana-X:Kk Merchandise display hanger

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