JPS58147139A - Lead wire of semiconductor device - Google Patents
Lead wire of semiconductor deviceInfo
- Publication number
- JPS58147139A JPS58147139A JP57029998A JP2999882A JPS58147139A JP S58147139 A JPS58147139 A JP S58147139A JP 57029998 A JP57029998 A JP 57029998A JP 2999882 A JP2999882 A JP 2999882A JP S58147139 A JPS58147139 A JP S58147139A
- Authority
- JP
- Japan
- Prior art keywords
- lead wire
- alloy
- exceeding
- conductivity
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
この発明゛は工Ｃ＋Ｌ ＳＩなどの半導体装置の１ノー
ド材に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a one-node material for semiconductor devices such as C+LSI.
従来、一般に、ＩＣやＬＳＩなどの半導体装置は、
（ａ）まず、リード素材として、板厚口０．１〜０．３
１ｉｔを有する条材を用意し、
（ｂ）上記リード素材よりプレス打抜き加工により製造
せんとする半導体装置の形状に適合したリードフレーム
を形成し、
（Ｃ）ついで、上記リードフレームの所定個所に高純度
・ＳｌあるいはＧｏなどの半導体素子を、Ａ２ペースト
などの導電性樹脂を用いて加熱接着するか、あるいは予
め上記リード素材の片面にメーツキしておいたＡｕ、
Ａｙ 、 Ｎｉ 、あるいはこれらの合金層を介して加
熱拡散圧着するかし、
（ｄ）上記半導体素子と上記リードフレームとに渡って
Ａｕ線によるワイヤボンデング（結線）を施し、（θ）
引続いて、上記半導体素子、結線、および半導体素子が
取付けられた部分のリードフレームを、これらを保護す
る目的で、プラスチックで封止し、（ｆ）最終的に、上
記リードフレームにおける相互に連なる部分を切除して
リード材とする、以上（ａ）〜（ｆ）の主要工程によっ
て製造されている。Conventionally, in general, semiconductor devices such as ICs and LSIs are manufactured using: (a) First, a lead material with a thickness of 0.1 to 0.3 is used.
(b) Form a lead frame suitable for the shape of the semiconductor device to be manufactured by press punching from the lead material, (C) Then, form a lead frame at a predetermined location on the lead frame. Purity: Semiconductor elements such as Sl or Go are thermally bonded using conductive resin such as A2 paste, or Au, which has been plated on one side of the lead material in advance,
(d) Wire bonding (connection) with Au wire is performed across the semiconductor element and the lead frame, (θ)
Subsequently, the semiconductor element, the wiring, and the part of the lead frame to which the semiconductor element is attached are sealed with plastic for the purpose of protecting them, and (f) finally, the interconnections in the lead frame are sealed. It is manufactured through the main steps (a) to (f) above, in which a portion is cut out to form a lead material.
したがって、半導体装置のリード材となるリード素材に
は、良好なプレス打抜き性、半導体素子の加熱接着に際
して熱歪および熱軟化が生じない耐熱性、良好な放熱性
と導電性、さらに半導体装置の輸送あるいは電気機器へ
の組込みに際して曲がりや繰返し曲げによって破損が生
じない強度が要求され、特性的には、引張強さ： ５５
ｋｇｆ７．．４以上、硬さ：ビッカース硬さで１７０以
上、伸び。Therefore, the lead material used as the lead material for semiconductor devices must have good press punching properties, heat resistance that does not cause thermal distortion or thermal softening during heat bonding of semiconductor elements, good heat dissipation properties and conductivity, and in addition, transportation of semiconductor devices. Alternatively, when incorporated into electrical equipment, it is required to have strength that will not cause damage due to bending or repeated bending, and characteristically, tensile strength: 55
kgf7. ．． 4 or more, hardness: 170 or more on Vickers hardness, elongation.
３％以上、導電率（放熱性、すなわち熱伝導性は導電率
で換算評価される）：３％ｌＡＣ３以上、軟化点（耐熱
性を評価する場合に用いられる）：３８０℃以上が必要
とされることがら、現在、コバール（Ｆｅ−２９％Ｎｉ
−１５％Ｃｏ合金）や４２合金（Ｆｅ −４２％Ｎｉ合
金）がリード素・材として広く実用に供されている。3% or more, electrical conductivity (heat dissipation, that is, thermal conductivity is evaluated in terms of electrical conductivity): 3%lAC3 or more, softening point (used when evaluating heat resistance): 380°C or more is required. Currently, Kovar (Fe-29%Ni)
-15%Co alloy) and 42 alloy (Fe -42%Ni alloy) are widely used as lead materials.
一方、近年、半導体装置の集積度は著しく向上する傾向
にあり、これに伴って半導体装置に発生する熱を逃がす
放熱性（熱伝導性、すなわち導電率）が重要視されるよ
うになっており、これに適合するには２０％ｌＡＣ３以
上の導電率をもったリード材の使用が不可欠であるとさ
れている。On the other hand, in recent years, the degree of integration of semiconductor devices has tended to increase significantly, and with this, the heat dissipation (thermal conductivity, or electrical conductivity) that allows the heat generated in semiconductor devices to escape has become important. In order to meet this requirement, it is considered essential to use a lead material with a conductivity of 20%lAC3 or higher.
しかし、現在実用に供されているコバールや４２合金は
導電率以外の特性では要求特性を十分満足するものの導
電率に関しては３％ｌＡＣ３程度と低く、特に近年の集
積度の高い半導体装置のリード材としては使用に供し得
なくなりつつあるのが現状である。However, although the Kovar and 42 alloys currently in practical use sufficiently satisfy the required properties other than electrical conductivity, their electrical conductivity is as low as 3% lAC3, especially for lead materials used in recent highly integrated semiconductor devices. The current situation is that it is becoming unusable.
そこで、本発明者等は、上述のような観点から、集積度
の高い半導体装置のリード材として使用するのに適した
材料を得べく、特に高い導電率を有するＣｕ合金に着目
し研究を行なった結果、重量％で、８ｎ： １．５〜４
．５％、 Ｐ ： ０．０１〜０．０５％。Therefore, from the above-mentioned viewpoint, the present inventors conducted research focusing on a Cu alloy having particularly high conductivity in order to obtain a material suitable for use as a lead material for highly integrated semiconductor devices. As a result, in weight%, 8n: 1.5-4
．． 5%, P: 0.01-0.05%.
Ｆ’６１：０．０５〜０１５チを含有し、残りがＣｕと
不可避不純物からなる組成を有するＣｕ合金は、集積度
の高い半導体装置のリード材に要求される特性、すなわ
ち引張強さ：５５ｋｇｆ／ｍａ以上、硬さ：ビッカース
硬さで１７０以上、伸び：３３チ上、導電率：２０チ工
ＡｃＳ以上、軟化点二４００℃以上を具備するという知
見を得たのである。A Cu alloy containing F'61: 0.05 to 015% and the remainder consisting of Cu and unavoidable impurities has the properties required for lead materials for highly integrated semiconductor devices, namely tensile strength: 55 kgf. /ma or higher, hardness: Vickers hardness of 170 or higher, elongation: 33 cm or higher, electrical conductivity: 20 cm or higher, and a softening point of 2400°C or higher.
この発明は上記知見にもとづいてなされたものであって
、以下に成分組成を上記の通りに限定した理由を説明す
る。This invention was made based on the above knowledge, and the reason why the component composition was limited as described above will be explained below.
（ａ）Ｓｎ
Ｓｎ成分には、リード材の強度を著しく向上させる作用
があるが、その含有量が１，５チ未満では所望の高強度
、すなわち５５ ｋｇｆ ７７以上の引張強さおよびビ
ッカース硬さで１７０以上の硬さを確保することができ
ず、一方４．５％を越えて含有させると、導電性が劣化
し、２０％ｌＡＣ３以上の導電率を確保することができ
なくなることから、その含有量を１．５〜４，５チと定
めた。(a) Sn The Sn component has the effect of significantly improving the strength of the lead material, but if its content is less than 1.5 inches, the desired high strength, that is, the tensile strength and Vickers hardness of 55 kgf 77 or more On the other hand, if the content exceeds 4.5%, the conductivity deteriorates and it becomes impossible to secure a conductivity of 20%lAC3 or more. The content was determined to be 1.5 to 4.5 chi.
（ｂ） ＰおよびＦｅ
これら両成分は、リード素材製造工程における冷間圧延
時に、冷間圧延と交互に繰返し施される焼鈍処理によっ
て、鉄りん化合物として素薙中に微細均一に分散析出し
、もってリード材の耐熱性を向上させるほか、リード素
材の熱間加工性およびプレス打抜き性を改善する作用を
もつが、その含有量が、それぞれＰ：０．０１％未満お
よびＦｅ：０、０５１未満では前記作用に所望の効果が
得られず、一方Ｐ：０．０５％および］？′ｅ：ｏ、１
５％をそれぞれ越えて含有させると、鉄りん化合物の析
出量が多くなりすぎて、メッキ性が劣化し、さらにＦｅ
の含有量が０．１５％を越えると磁性を帯びるようにな
り、この磁性は半導体素子に悪影響（メモリーエラーな
どの発生）を及はすことから、その含有量を、それぞれ
Ｐ ： ０．０１〜０．０５％、Ｆｅ：００５〜０．１
５％と定めだ。(b) P and Fe These two components are finely and uniformly dispersed and precipitated in the core as iron phosphorus compounds during cold rolling in the lead material manufacturing process, by annealing treatment that is repeated alternately with cold rolling. In addition to improving the heat resistance of the lead material, it also has the effect of improving the hot workability and press punching property of the lead material, but the content is less than 0.01% P and less than 0.051% Fe. In this case, the desired effect could not be obtained in the above action, and on the other hand, P: 0.05% and ]? 'e: o, 1
If the content exceeds 5%, the amount of iron phosphorus compounds precipitated becomes too large, deteriorating plating properties, and furthermore, Fe
If the content exceeds 0.15%, it becomes magnetic, and this magnetism has an adverse effect on semiconductor elements (occurrence of memory errors, etc.), so the content is set to P: 0.01. ~0.05%, Fe:005~0.1
It is set at 5%.
つぎに、この発明のリード材を実施例により比較例と対
比しながら説明する。Next, the lead material of the present invention will be explained using examples and comparing with comparative examples.
実施例
通常の低周波溝型誘導炉を用い、それぞれ第１表に示さ
れる成分組成をもったＣｕ合金溶湯を調製し、半連続鋳
造法にて厚さ：１００ｇＸ幅： ４００ｍｍ、 ｘ長さ
：１５００ｍｍの鋳塊とした後、圧延開始温度二８００
℃にて熱間圧延を施して板厚、１１朋の熱延板とし、つ
いで前記熱延板の上下面を面側して板厚−１０朋とした
後、冷間圧延と焼鈍とを交互に繰返し施し、仕上圧延率
：４０チにて板厚：０．２５ｍ、を有する本発明リード
素材１〜４および比較リード素材１〜４をそれぞれ製造
した。Example Using a conventional low-frequency groove induction furnace, molten Cu alloys having the respective compositions shown in Table 1 were prepared, and cast using a semi-continuous casting method to obtain a thickness of 100 g, a width of 400 mm, and a length of 400 mm. After making the ingot into a 1500mm ingot, the rolling start temperature was 2800mm.
A hot-rolled plate with a thickness of 11 mm was obtained by hot rolling at ℃, and then the upper and lower surfaces of the hot-rolled plate were turned face to face to have a thickness of -10 mm, and then cold rolling and annealing were alternately performed. Lead materials 1 to 4 of the present invention and comparative lead materials 1 to 4, each having a plate thickness of 0.25 m at a finish rolling rate of 40 inches, were manufactured by repeatedly applying the same method to the above.
なお、比較リード素材１〜４は、いずれも構成成分のう
ちのいずれかの成分含有量（第１表に◆印を付したもの
）がこの発明の範囲から外れた組成をもつものである。Note that Comparative Lead Materials 1 to 4 all have compositions in which the content of one of the constituent components (those marked with ◆ in Table 1) is outside the scope of the present invention.
ついで、この結果得られた本発明リード素材１〜４およ
び比較リード素材１〜４、さらに比較の目的で用意した
コバールおよび４２合金のリード素材（以下従来リード
素材１，２という）について、引張強さ、伸び、ビッカ
ース硬さ、導電率、および軟化点を測定し、これらの測
定結果を第１表に合せて示した。Next, the tensile strength of the resulting lead materials 1 to 4 of the present invention and comparison lead materials 1 to 4, as well as Kovar and 42 alloy lead materials (hereinafter referred to as conventional lead materials 1 and 2) prepared for the purpose of comparison, was determined. The hardness, elongation, Vickers hardness, electrical conductivity, and softening point were measured, and the results of these measurements are shown in Table 1.
第１表に示される結果から、本発明リード素材１〜４は
、いずれも高集積度の半導体装置のリード材に要求され
る強度、放熱性、および耐熱性を具備していることが明
らかである。これに対して、比較リード素材１〜４は、
前記特性のうち少なくともいずれかの性質が劣ったもの
になっており、また従来リード素材１，２においては導
電率が相対的に低く、２０％ｌＡＣ８以上の導電率が要
求される高集積度の半導体装置には使用することができ
ないことが明らかである。From the results shown in Table 1, it is clear that lead materials 1 to 4 of the present invention all have the strength, heat dissipation, and heat resistance required for lead materials for highly integrated semiconductor devices. be. On the other hand, comparative lead materials 1 to 4 are
At least one of the above characteristics is inferior, and the conductivity of conventional lead materials 1 and 2 is relatively low. It is clear that it cannot be used for semiconductor devices.
また、本発明リード材は、Ｃｕ合金で構成されているた
めに、Ａｕ、Ａｙ、Ｎｉ、およびこれらの合金に対する
メッキ性、並びにはんだ付は性もきわめてすぐれたもの
であった。Furthermore, since the lead material of the present invention was composed of a Cu alloy, it had excellent plating properties and soldering properties for Au, Ay, Ni, and alloys thereof.
上述のように、この発明のリード材は、集積度の高い半
導体装置のリード材に要求される特性、すなわち５５
ｋｇｆ／ｍｌｊ以上の引張強さ、３％以上の伸び、ビッ
カース硬さで１７０以上の硬さ、２０％ｌＡＣ３以上の
導電率、および４００℃以上の軟化点を十分に満足して
具備するものである。As mentioned above, the lead material of the present invention has the characteristics required for lead materials of highly integrated semiconductor devices, that is, 55
It has a tensile strength of kgf/mlj or more, an elongation of 3% or more, a Vickers hardness of 170 or more, a conductivity of 20%lAC3 or more, and a softening point of 400°C or more. be.
出願人 玉川機械金属株式会社 代理人 富 １） 和 夫Applicant: Tamagawa Machinery and Metals Co., Ltd. Agent Tomi 1) Kazuo
Claims (1)
〜０．０５ ％＋ ｒｅ：０．０５〜０．１５ ％を含
有し、残りがＣｕと不可避不純物からなる組成（以上重
量％）を有するＣｕ合金にて構成したことを特徴とする
半導体装置の１ノード材。Sn: 1.5-4.5%, P: OlOl
~0.05% + re:0.05~0.15%, and the remainder is Cu and unavoidable impurities (wt%). 1 node material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57029998A JPS58147139A (en) | 1982-02-26 | 1982-02-26 | Lead wire of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57029998A JPS58147139A (en) | 1982-02-26 | 1982-02-26 | Lead wire of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58147139A true JPS58147139A (en) | 1983-09-01 |
Family
ID=12291590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57029998A Pending JPS58147139A (en) | 1982-02-26 | 1982-02-26 | Lead wire of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147139A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956553A (en) * | 1982-09-04 | 1984-04-02 | Kobe Steel Ltd | Copper alloy for terminal or connector and its manufacture |
| JPS6299429A (en) * | 1985-10-25 | 1987-05-08 | Kobe Steel Ltd | Material for lead frame having superior suitability to shearing work |
| EP0841408A2 (en) * | 1996-11-07 | 1998-05-13 | Waterbury Rolling Mills, Inc. | Copper alloy and process for obtaining same |
| US6436206B1 (en) | 1999-04-01 | 2002-08-20 | Waterbury Rolling Mills, Inc. | Copper alloy and process for obtaining same |
| JP2009215570A (en) * | 2008-03-07 | 2009-09-24 | Kobe Steel Ltd | Copper alloy sheet superior in dicing workability for use in qfn package |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS572849A (en) * | 1980-06-04 | 1982-01-08 | Kobe Steel Ltd | Copper alloy for electronic parts |
-
1982
- 1982-02-26 JP JP57029998A patent/JPS58147139A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS572849A (en) * | 1980-06-04 | 1982-01-08 | Kobe Steel Ltd | Copper alloy for electronic parts |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956553A (en) * | 1982-09-04 | 1984-04-02 | Kobe Steel Ltd | Copper alloy for terminal or connector and its manufacture |
| JPS5935976B2 (en) * | 1982-09-04 | 1984-08-31 | 株式会社神戸製鋼所 | Copper alloy for terminals and connectors and its manufacturing method |
| JPS6299429A (en) * | 1985-10-25 | 1987-05-08 | Kobe Steel Ltd | Material for lead frame having superior suitability to shearing work |
| EP0841408A2 (en) * | 1996-11-07 | 1998-05-13 | Waterbury Rolling Mills, Inc. | Copper alloy and process for obtaining same |
| EP0841408A3 (en) * | 1996-11-07 | 1999-03-03 | Waterbury Rolling Mills, Inc. | Copper alloy and process for obtaining same |
| US6436206B1 (en) | 1999-04-01 | 2002-08-20 | Waterbury Rolling Mills, Inc. | Copper alloy and process for obtaining same |
| JP2009215570A (en) * | 2008-03-07 | 2009-09-24 | Kobe Steel Ltd | Copper alloy sheet superior in dicing workability for use in qfn package |
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