JPS58166228A - Measuring system of temperature - Google Patents

Abstract

PURPOSE:To know accurately a temperature of a material to be treated, by placing a dummy of the material to be treated formed by embedding a heat sensitive part on a susceptor similarly to the material to be treated and measuring its temperature. CONSTITUTION:A semiconductor wafer 1 is housed in recessed parts 2a of a susceptor 2 and also, a wafer dummy 3 having the same figure is housed in one of the parts 2a. A thermocouple part 41 of a thermocouple thermometer 4 is embedded in the dummy 3 and the temperature is displayed on a display part 43 through a lead wire 42 and the accurate temperature of the wafer 1 is known.

Description

[Detailed Description of the Invention] This invention is based on I! The present invention relates to a concentration measurement method, and more specifically, relates to a concentration measurement method suitable for measuring all levels within an object to be processed placed in a heated environment.

When heat-treating a workpiece, it is necessary to accurately measure the temperature of the workpiece; A contact measurement method is used.

To give a specific example, when manufacturing semiconductor wafers, there is a process of covering the surface of the semiconductor wafer with PS glass (phosphorus silicate glass). A large number of semiconductor wafers are placed on the susceptor, and the semiconductor wafers are processed appropriately by heating the susceptor. It forms a protective film while maintaining the temperature.

In this case, the semiconductor wafer must be kept at an appropriate concentration, and in order to detect the appropriate humidity, a metal case housing the joint of a thermocouple thermometer is usually brought into contact with the susceptor. 1 on the display unit connected to! The heat supply to the susceptor is controlled while reading the temperature.

However, when temperature is measured by pressing the metal case part against the susceptor, the metal case part becomes a heat dissipation part, and the heat of the susceptor is radiated to the outside air, causing the WA of the actual semiconductor wafer to be
The temperature is displayed with an error of 5℃ to 10℃ lower than the temperature,
The reality is that accurate temperature control is not performed.

Therefore, even though the object to be controlled at 111 degrees is not the susceptor but the semiconductor wafer placed on it, the temperature of the semiconductor wafer itself cannot be measured or controlled. There is.

Therefore, this invention aims to make it possible to accurately know the actual temperature of a so-called processed object, such as a semiconductor wafer placed on a susceptor. The joint part of the meter is buried in an environment made of a workpiece such as a semiconductor wafer or a material with similar physical properties, and then placed on a heat treatment table such as a subuta and heated without hot water. It is characterized by being able to perform measurements.

Hereinafter, in the attached drawings showing the configuration of this invention, examples of Bob will be described.
explain about. First, FIG. 1 is a perspective view showing a state in which a 4' solid wafer 1 is placed on a susceptor 2 for heat treatment, and the susceptor 2 has a recess 2a formed therein corresponding to the size and shape of the semiconductor wafer 1. The semiconductor wafer 1 is placed in the susceptor 2 with the semiconductor wafer 1 housed in the recess 2a.

In order to accurately know the internal temperature of the semiconductor wafer 1, a wafer dummy 3 of the semiconductor wafer is formed. This wafer dummy 3 has the same shape and size as the semiconductor wafer 1, and is accommodated in one of the recesses 2a formed in the susceptor 2.

, Thermocouple temperature inside this wafer dummy 3! ! ? A thermocouple section 41 of No. 4 is buried, and a heat-resistant and insulated lead @42 extends from this thermocouple section 41 and is connected to a display section or a display section 43 equipped with a control system, a recorder, etc. has been done.

The wafer dummy 3 is formed by stacking two wafers and sandwiching the thermocouple section 41 between the two wafers, or is made of a copper material having higher thermal conductivity than the wafer.

Preferably, about 0.1- is used for the thermocouple part 41,
In particular, when a chrome-enamel thermocouple is used, it does not react with silicon, which is the main component of the wafer, and the life of the thermocouple is extremely long.

Next, the temperature measurement operation of the semiconductor wafer 1 on the susceptor 2 will be explained. The susceptor 2 is heated by electric heat to create a temperature environment suitable for forming a protective film on the surface of the semiconductor wafer 1.
To find out the temperature of the semiconductor wafer 1 at point a, place the wafer dummy 3 in the recess 2a. ! temperature environment, and the temperature of the semiconductor wafer 1 is measured via the wafer dummy 3.

That is, since the thermocouple section 41 is embedded in the wafer dummy 3, an electromotive force is generated in the thermocouple section 41 due to heat conduction from the susceptor 2, which drives the display section 43 via the lead wire 42, and the semiconductor We need to know m11 [of Ic1]. Of course, it is used not only for temperature display but also as a control signal for the heat source that heats the susceptor 2.

In the above explanation, an example was given in which the temperature measurement method of the present invention was applied to measuring the temperature state in an environment where a semiconductor wafer was placed in a susceptor and heated. In addition, it can also be used to measure the surface temperature of a susceptor, in other words, the surface temperature of an object to be measured.

As is clear from the above description, the temperature measurement method of the present invention configures a temperature sensing body by embedding a heat sensitive part, represented by a thermocouple, in a thermally conductive material, and connects this to the same IM J as the object to be measured.
l! +, : I') E U temperature measurement 13 jj j
(L,' t Therefore, the process of temperature measurement C heat tIl dissipation is li (1jlj)

[Brief explanation of the drawing]

The attached drawings show temperature measurement 1) 1 (IIQ) according to the present invention.
'i・frub C1 Fig.1
It is an explanatory diagram for accepting fi k rr, lff1, etc. 1... Cliff conductor Tc, 2... Susceptor, 2a...
・Recess, 3... I Hadami-14... Thermocouple ff1
1M+, 41-thermocouple section, 42... lead wire, 4
3...Display section. Special applicant: Piinia Co., Ltd.? 1 representative patent attorney
Kobashi 18 floating

Claims (1)

[Claims] (1) Placed on the susceptor, a suitable I! In the method of measuring the temperature of a workpiece placed in a temperature environment, a concentration detection body formed by embedding a heat sensitive part in a thermally conductive material is placed on a susceptor in the same way as the workpiece, and connected to the concentration detection body. A temperature measurement method that measures the environmental temperature of the object to be treated using the hot water temperature display.