JPS58166114U - power amplifier circuit - Google Patents
power amplifier circuitInfo
- Publication number
- JPS58166114U JPS58166114U JP6251082U JP6251082U JPS58166114U JP S58166114 U JPS58166114 U JP S58166114U JP 6251082 U JP6251082 U JP 6251082U JP 6251082 U JP6251082 U JP 6251082U JP S58166114 U JPS58166114 U JP S58166114U
- Authority
- JP
- Japan
- Prior art keywords
- amplifier circuit
- power amplifier
- ambient temperature
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の電力増幅回路を示す回路図、第2図〜第
4図はそれぞれ第1図の回路による出力及び効率特性を
示す図、第5図は本考案の一実施例を示す回路図、第6
図は第5図の回路による出力及び効率特性の一例を示す
図、第7図は本考案の他の実施例の一部を示1回路図で
ある。
Tll・・・・・・入力端子、T12・・・・・・出力
端子、Qll・・・・・・MOS FET、 L・・
・電源平滑用チョーク、C・・・−・・電源平滑用コン
デンサ、D1〜D3・・・・・・ダイオード、S1〜S
3・・・・・・熱検知スイッチ、D11〜D13・・・
・・・整流器、T・・・・・・電源トランス。Figure 1 is a circuit diagram showing a conventional power amplifier circuit, Figures 2 to 4 are diagrams each showing the output and efficiency characteristics of the circuit in Figure 1, and Figure 5 is a circuit diagram showing an embodiment of the present invention. Figure, 6th
This figure is a diagram showing an example of the output and efficiency characteristics of the circuit of FIG. 5, and FIG. 7 is a circuit diagram showing a part of another embodiment of the present invention. Tll...Input terminal, T12...Output terminal, Qll...MOS FET, L...
・Power supply smoothing choke, C...--Power supply smoothing capacitor, D1-D3...Diode, S1-S
3...Heat detection switch, D11-D13...
... Rectifier, T... Power transformer.
Claims (1)
出される電界効果トランジスタを用いた電力増幅回路に
おいて、周囲温度を検出し、周囲温度が上昇すると前記
電界効果トランジスタのドレイン電圧が低下するように
電源電圧を制御することを特徴とする電力増幅回路。In a power amplification circuit using a field effect transistor in which an input signal is applied to the gate and an output signal is extracted from the drain, the ambient temperature is detected and the power source is set so that the drain voltage of the field effect transistor decreases as the ambient temperature rises. A power amplifier circuit characterized by controlling voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6251082U JPS58166114U (en) | 1982-04-28 | 1982-04-28 | power amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6251082U JPS58166114U (en) | 1982-04-28 | 1982-04-28 | power amplifier circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58166114U true JPS58166114U (en) | 1983-11-05 |
Family
ID=30072661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6251082U Pending JPS58166114U (en) | 1982-04-28 | 1982-04-28 | power amplifier circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58166114U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63113312U (en) * | 1987-01-16 | 1988-07-21 |
-
1982
- 1982-04-28 JP JP6251082U patent/JPS58166114U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63113312U (en) * | 1987-01-16 | 1988-07-21 |
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