JPS58165368A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To adequately adjust the impurity density of each region surface by a method wherein a heat treatment is performed in a wet atmosphere, after etching the other region surface in the state of covering one region with a mask material. CONSTITUTION:The impurity of boron 9 is introduced through the mask for boron diffusion into the surface of an epitaxial layer 3 at a density high than at the time of normal formation of a well. After forming an Si, an SiO2 film, or an Si nitride film 10, the vapor chemical precipitation film on a well part is etched, thus a part of an epitaxial layer 3 is exposed, and the surface thereof is etched resulting in the removal of the surface layer wherein boron is introduced at a high density. By performing a heat treatment in a wet atmosphere, the impurity of boron is extended and diffused deep inside, thus a P-base layer 6 is formed, and a P isolation 7 and a P-well 8 are formed.

Description

DETAILED DESCRIPTION OF THE INVENTION Regarding the method of manufacturing a semiconductor device according to the present invention,
The subject is 0M0s4'@bodyill.

Bipolar MPII transistor and 0M0nlFl'r
(Complementary 111M0# field effect transistor) and one hair 9
When coexisting in the half body jii, conventionally the lIi group*(f
-Blast rate) lit side KP 臘tsu: cl 1g type M.

horizontal 11FPM based on cotwi well t.
transistors, etc., and other f) Pill wells.
A method is generally adopted in which one channel MO8FKTt- and one KP channel MO8F are formed on a different surface of an N substrate in which no well is formed. However, this method has drawbacks such as the bipolar transistor O's collector resistance r0° being large and the isolation between the respective ranges (electrical ratio 1111) being difficult.

On the other hand, the present applicant was advised that some parts of the N
Forming 81 layers of y-epitaxial hair through a broken layer,
On the one hand, from this Y-epitaxial 81 layer hairstyle, II
+' P that spans the field layer and is connected to the P- substrate on the other hand.
Form a P-type well, and form a P-well t-type NPM transistor on the M+ trenched layer.
The -S of the P-well connected to the substrate is used as an isolation layer, or to form a summer channel MpalFITy, or separated by the P-well and tM-epitaxy tube.

A bipolar 0MO8 conductor housing V* was proposed to form a bipolar layer KP channel MO--FITij.

With this method, the collector resistance can be reduced by reducing the N buried layer, and the isolation process using the P well is also effective69, and the process requires less work than the conventional Pipog process It also increases f'Lft and has an advantage of 1. According to the above method, bipolar transistor oH11 base and y channel MO-νmtoPjl
l! ! Is it compatible with MOgFlte to form the same plate with the same P lid? Well O impurity - lowering the station will cause punch-through in bipolar. Reverse KP shoe base O#I & [t116 meruto,
V□ of M0811te changes. In addition, it is desirable that the isolation Ron by P-Tsell should be a degree louder. However, in order to adjust K11lI so that i'ma* is associated with each region, K becomes an m-separate on selective indifferent introduction knee and the accompanying mask knee tIX is necessary, and the process's thinning is avoided. Kntsuta is also known as body.

The superposition @ was K)l to solve m during Kagaru! ,
, One of the objectives of O″ee Part 9 is to complicate the process, and each
A truly brave and well-equipped Paibo 90 MOBX
Ow: @KToru to serve.

Below is the present invention t bipolar OMO! The process of step 110 will be explained in detail.

Figure 1 (IL) ~ (Implementation when forming a N bipolar transistor and 0 MO87I? on a P-81 substrate) Each knee shape III is
II - As shown.

(a) P-81 board 1 (1,0X101・mutol
l@61”.

1 to 20 am) is prepared, and after diffusing 8b (anti-silicon) to form the y inclusion layer 2 into a part of the p-plane, an M-epitaxial layer 3 (1,2×10 ``Ato-〇Country-■.

4Ω, depth 11μm) r is formed.

(b) On the surface of the epitaxial layer 3, a mask II (8tOsll) 4, which will serve as a mask for selective Wh dispersion, is thermally generated, and a photoresist mask 51 is formed on - by photo processing.

(0) The above photoresist mask YIrg! Perform 1140 selective oxidation using oxidation to remove IPM) transistor O base (6), isolation layer (7) and well region (IPM).
8) Finish boron diffusion mask IR shape for forming k.

(The impurity boron 911 is introduced into the surface of the epitaxial layer at one time from the time of forming the overcurrent O-well through the above mask.The surface impurity is introduced by deposition or ion implantation at a time of 2 to 5XIO" atnms.
G No! 2 ~ I O” azoms country Ume degree.

(・) If grown on the entire surface, 0VD (vapor phase chemical deposition) method etc./1it (silicon), IIIOmMToru%Af
d Silicon nitride was formed at a pH of 0.8 to 10, then the top of the well was etched to expose -5-tji of the epitaxial layer, and its surface was etched to form IIi#Ij[K :Remove the surface layer into which boron has been introduced.

(f) After this, hot rolling II for diffusion is performed in wet ambient air to stretch and diffuse the boron impurities on the surface of the epitaxial layer inside, while the M+ wrinkled layer 2 [j? A base layer 6 is formed, and on the other hand 1-Todoroki* has a class continuation A.
P isolation carbon 7 and? Well 8 is formed. Since this stretching and dispersion is carried out in the air under Ouereto, the exposed well portion of the epitaxial layer 3 is exposed at the same time as the diffusion.
Ia 8101114a is generated, and this 810@erroneous 4
Due to the turtle, the boron on the surface of the well part e) is 810. The impurity concentration is further collected in the cvD@
The part 810991 that was cut off in 10 does not grow as much, and it retains impurities at hair because it absorbs less of the high 11f boron on the surface.

(g) After this, P channel, vMOaFITO7-x
Photoetch the oxide film for drain diffusion.

The second high 11&: boron introduction i is carried out. This Boron T shrimp! By diffusing into the axial layer, the P+ source 11. , P1 channel stopper at the same time as the P drain or after the isolation process.
a, A P base contact portion 14 is formed on a part of the P base.

1'ζ (b) Next, perform 01IIt formation 10*touch for y-channel MO8FITO source/drain diffusion, introduce phosphorus or arsenic, tINU or 2 (b) perform phosphorus ##, and scatter the epitaxial layer Klf. By this, P well O-@KM source 150M drain 1
At the same time as praying for 6, Eituta 11 and Sono collector IL output 111g are formed in the bipolar region.

After this, although not shown in the figure, gate etching, gate oxidation,
Contact F photoetch, electrode formation 111-4 each! Tehi Boats 0M0IIXOk completed.

As mentioned in Sanemarouchi's work@(-F) above, P well $
When introducing bones to form Pace 6, a deposit or ion implantation was performed on the higher #I belly than when forming a normal well.

After that, by masking the area other than the well part with a CVD shoe 10, etc., we masked the wet area by performing well stretching diffusion in the air. (based on) - [
Decrease compared to 31-1:,! It's cloudy. That is, it is possible to form regions with different impurity concentrations by introducing impurities l-, while KPM
) Kunji, , , , , 4 pressure resistance (Bv, .),
f.

On the other hand, if you can improve your channel MO#Fm'!
'0 Harumasa's V, Mkm?

#11110(I) to buttons show a part of the process of IIPI bipolar/0M0B process 0 which is carried out without using the 0VDII mask in the process of the embodiment.

(a) KM on P-81 substrate 1 N-
An epitaxial layer 3 is formed, a mask 4 is formed using a KIl film on the surface of the epitaxial layer, and boron 91 is applied through the solid mask at a higher degree than when forming a normal well. It is introduced onto the surface of the crystal layer 8.

These works are exactly the same as the implementation shown in (a) to work 1 in Fig. 1.

(After this, as in the above-mentioned implementation, boron is diffused into the epitaxial layer without adhesion.N is well-diffused in dry 01, and at the same time, ainlasian carbon and bipolar base P are diffused. After that, wet oxidation is performed to form the epitaxial layer Ii1.
Men KJIIi'Lo*ll4m.

By forming 4b..., the number of impurities near the surface is significantly reduced. This also allows the boron to be enlarged into the epitaxial layer at the same time! Get an IC haircut.

Diffusion layer in this case @ a e 7 a @ 8 a a
s is the double-sided diffusion depth of the MWM transistor fK
stop.

(0) After this, P channel) (osym'ro source.

Mastering drain diffusion Oslization @O photoetch I line 1
! At the same time as boron is introduced into the m1IO high source,
Drain, well isolation channel stopper and base 1s plane channel stopper) 11K May introduction, diffused P+ source 11, ? +Drain 12. Channel stopper 13.1G.

A base contact t4 is formed.

(Q) Next, the source/drain group of the iris channel MO ν1te is introduced by introducing O oxide, phosphorus, or arsenic, and 1% KM+source Is of the P well.

1+)-rain 1・t* and at the same time bipolar region KM
X<-Jll'l and I''s vl ll1tk
S u11B+ is formed.

As mentioned in the above XS＊O engineering@传传传张～(e), for well, isolation, and base type lE, deposition or ion implantation is required compared to normal well formation. After conducting 1 step of dry diffusion and 1 step of wet oxidation to uniformly lower the impurity concentration near the surface, the isolation carbon and the oxidized at-plane of the bipolar region were removed for a second time. Introduction of melon [By performing p1 ain raysin part O channel stopper and impurity concentration summer channel MOaF of hybase region
m! The well area for formation can be made larger than once, increasing the number of microparticles (MPM), increasing the f, l of the MPM transistor, and keeping the V□ of the KM channel polymer very positive. I can do it.

Figure 4 shows the failure of the isolation, base, and well areas. 111m! F once curved trout 1 and P(N) channel, MO
The impurity curve -N+ of the source drain and channel stopper is shown in contrast.
'1 Book, Meiyu 2. I, -,. M'ki, engineering. Kfie, 1. .

It is extremely effective for improving Ibora IsO-type hair.

[Brief explanation of the drawing]

Figures 1(a) to (6) show bipolar ray Oa using the device.
The SN+RR surface diagram showing the actual process, of which (0) is a front cross-sectional view, the second figure is the implementation of Figure #11? 3 (-~(ω is a partially processed cross-sectional view showing another fruit jlaIPIl of the bipolar 08 process according to the present invention; #I3 is a It is an impurity #ItL distribution curve diagram corresponding to the example shown in the figure. l...P81! Plate, 2...K Buried layer, 3...N
- epitaxial layer, 4... oxide film, 6... photoresist mask, 6... base, 1... isolation town. 8...Well, 9...Boron, lO...O'VD
lll, 11...P+ source, 12...P drain, 13...P+ channel stopper, 14...base contact, 16...M drain, 17...Iris emitter, 18...N Collector area extraction section, 19.
...P+Channels+:: Totsupa. I1. ,,. Agent: Patent attorney Usui Deri, middle-class patent attorney. 1, :Go 4'12゜ 1st Figure 1 Figure 2 Figure 1? Paddle χ No. 4 M Water surface J7 1 Firing 2 χ No. 3 Procedural amendment (method) Display of case 1982 Patent application No. 47206 Name of invention Person who makes amendments to manufacturing method of semiconductor device, 14: ) 5101 Manufactured by Hitachi Co., Ltd. Representative name: 3 1) Masaru Katsu, Shigeyo, Makoto, subject to compensation

Claims (1)

[Scope of Claims] 1. Forming a selective diffusion mask material for forming regions M and Bk on a semiconductor substrate, introducing impurities i into regions M and BK through the mask il-, and then forming the regions M and Bk. After etching the surface of area B while fenced with another mask material,
Heat treatment for the above impurity diffusion in a wet atmosphere (1 unit)
A method of manufacturing a semiconductor device in which the length of the surface of region B is reduced by t% with respect to the surface degree S of region Ii. 2. Complementary type MO8 as the above region M and st1 region B as the pace and isolation target of the bipolar transistor
A method for manufacturing a semiconductor device according to claim 1, wherein a well serving as one base of FIIt'T is formed. 3. Selective diffusion mask material for forming vocal region M and region Bk on a semiconductor substrate. Cutting hair, introducing region M and region BK impurities through a keyboard mask, then diffusing in dry oxygen, followed by wet treatment) The surface impurity level of areas A and 1 is lowered by forming a thick oxide layer through oxidation, and by introducing impurities into the area from which the oxide film has been removed, the area density is increased. o*tii
To make the surface of region 1 -antinoside i smaller with respect to degree a'g1-
Semiconductor 1itO fabrication method using mold. 4. The above region M is the pie position, the base of the transistor and the isolation ln sr, and the complementary form M is the area 1.
OLνMY(D) The half-fat body WOE manufacturing method described in Claim 1 of the Patent PSMs for forming a well serving as one of the substrates.