JPS58162129A - Semiconductor switch - Google Patents

Semiconductor switch

Info

Publication number
JPS58162129A
JPS58162129A JP57045405A JP4540582A JPS58162129A JP S58162129 A JPS58162129 A JP S58162129A JP 57045405 A JP57045405 A JP 57045405A JP 4540582 A JP4540582 A JP 4540582A JP S58162129 A JPS58162129 A JP S58162129A
Authority
JP
Japan
Prior art keywords
phototransistor
emitting diode
light emitting
voltage
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57045405A
Other languages
Japanese (ja)
Inventor
Yukio Iitaka
幸男 飯高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP57045405A priority Critical patent/JPS58162129A/en
Publication of JPS58162129A publication Critical patent/JPS58162129A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
    • H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To turn off a switch without applying negative voltage to an input signal, by forming a semiconductor switching circuit with a phototransistor and a light emitting diode. CONSTITUTION:When a voltage is applied to an input terminal 7, a light emitting diode 5 emits light, and by photodetecting it, a current I flows out to a phototransistor 6, and by this current I, the light emitting diode further emits light, sets the phototransistor 6 to an on-state completely, and even if the input voltage is eliminated, the on-state is continued. Subsequently, when the input terminal 7 is short-circuited, the current does not flow to the light emitting diode 5, the light is not irradiated to a phototransistor 6, and the phototransistor 6 becomes to an off-stage. It is unnecessary to apply negative voltage to an input signal.

Description

【発明の詳細な説明】 〔１〕　　発明の目的 この発明はゲートターンサイリスタ（日立製作所の登録
商標以下ＧＴＯという）と同様な動作をし、かつオフ時
にゲート端子に逆方向電圧を印加する必要のない半導体
スイッチ回路を提供せんとするものである。[Detailed Description of the Invention] [1] Purpose of the Invention The present invention operates in the same way as a gate turn thyristor (hereinafter referred to as GTO, a registered trademark of Hitachi), and eliminates the need to apply a reverse voltage to the gate terminal when off. The purpose of this invention is to provide a semiconductor switch circuit that does not require a semiconductor switch circuit.

〔２〕従来例 第１図の如く直流電源（１）に負荷（３）及び通常のサ
イリスタ（ＧＴＯでないサイリスタをいう。以下ＳＣＲ
という。）（２）を直列に接続した場合、時間ｔとＳＣ
Ｒにかかる入力電圧Ｖａ及び負荷電流■との関係は第２
図の如くなる。つまり入力電圧がＳＣＲのゲートに印加
されると同時に５ＣＲ（２］がオン状態となり負荷電流
ｌが流れ出し入力電圧が印加されなくなっても電源（１
）がＯｖになるまでは５ＣＲ（２＋のオン状態は持続す
る。[2] Conventional example As shown in Figure 1, a DC power supply (1) is connected to a load (3) and a normal thyristor (hereinafter referred to as a thyristor that is not a GTO).
That's what it means. ) (2) are connected in series, time t and SC
The relationship between the input voltage Va applied to R and the load current ■ is the second
It will look like the figure. In other words, at the same time that the input voltage is applied to the gate of the SCR, 5CR (2) turns on and the load current l flows out. Even when the input voltage is no longer applied, the power supply (1
) remains on until 5CR (2+) becomes Ov.

一方５ＣＲ（２＋のかわりにＧＴＯが使用されるならば
その上記特性は第３図の如くなる。　つまりＧＴＯをオ
ン状態とするのは通常のサイリスタと同様であるが、ゲ
ート１こ逆方向電圧を加えればオフ状態とすることがで
きるのである。しかしながらこのＧＴＯを使って負荷電
流のオン、オフをするには入力信号に正と負の２極を用
意する必要があった。On the other hand, if GTO is used instead of 5CR (2+), the above characteristics will be as shown in Fig. However, in order to turn the load current on and off using this GTO, it was necessary to prepare two poles, a positive and a negative, for the input signal.

この発明は上記欠点を除去せんとするものであり、その
要旨とするところは、フォトトランジスタと発光ダイオ
ードからなるフォトカブラにおいて、フォトトランジス
タの一端と発光ダイオードの一端と結び、フォトトラン
ジスタの他端を負荷を通して電源の一端とまたＬＥＤの
他端を電源のもう一方の端子に接続し、入力端子を発光
ダイオードの両端と一致させた半導体スイッチ回路であ
る。This invention aims to eliminate the above-mentioned drawbacks, and its gist is that in a photocoupler consisting of a phototransistor and a light emitting diode, one end of the phototransistor is connected to one end of the light emitting diode, and the other end of the phototransistor is connected to one end of the light emitting diode. This is a semiconductor switch circuit in which one end of the power source and the other end of the LED are connected to the other terminal of the power source through a load, and the input terminals are aligned with both ends of the light emitting diode.

以下この発明を第４図及び第５図に示す一実施例薯こ基
づいて説明する。The present invention will be explained below based on an embodiment shown in FIGS. 4 and 5.

直流電源（１）には負荷（３）及びフォトカプラ（４）
の順で直列に接続されている。フォトカプラ（４）を構
成する発光ダイオード（以下ＬＥＤという）（５）とフ
ォトトランジスタ（６）間及びＬＥＤ（５１の出力側に
は入力端子（７）が設けられている。The DC power supply (1) has a load (3) and a photocoupler (4).
are connected in series in this order. An input terminal (7) is provided between a light emitting diode (hereinafter referred to as LED) (5) constituting the photocoupler (4) and a phototransistor (6) and on the output side of the LED (51).

次に動作状態を説明する。Next, the operating state will be explained.

まず電源（１）により電圧が印加されていて入力端子（
７）に電圧が印加されていない時は、ＬＥＤ（５１は発
光せず従ってフォトカプラ（４）中のフォトトランジス
タ（６）はオフ状態にある。First, voltage is applied by the power supply (1) and the input terminal (
When no voltage is applied to 7), the LED (51) does not emit light and therefore the phototransistor (6) in the photocoupler (4) is in an off state.

次に入力端子（７）に電圧が印加されるとＬＥＤ（５１
が発光し、これを受光してフォトトランジスタ（６）に
電流■が流れ出し、この電流ＩによりＬＥＤ（５１をさ
らに発光させフォトトランジスタ（６）を完全なオン状
態にする。この状態では入力電圧をとり去ってもＬＥＤ
（５１には電流が流れ続け、この回路はオン状態を続け
る。次にこの回路をオフ状態にするｌこはＬＥＤ（５１
に流れている電流をＯにすればよく、入力端子（７）を
短絡すればよい。つまり、入力端子（７）を短絡するこ
とによりＬＥＤ（５１に電流が流れず、従ってフォトカ
プラ（４）中のフォトトランジスタ（４）響こは光が当
らずフォトトランジスタ（４）はオフ状態となる。Next, when voltage is applied to the input terminal (7), the LED (51
emits light, receives this light, and a current (2) flows into the phototransistor (6). This current I causes the LED (51) to emit more light and turns the phototransistor (6) into a complete on state. In this state, the input voltage is LED even if removed
(Current continues to flow through 51, and this circuit continues to be in the ON state.) Next, this circuit is turned OFF by using the LED (51).
The current flowing through the input terminal (7) may be set to O, and the input terminal (7) may be short-circuited. In other words, by short-circuiting the input terminal (7), no current flows to the LED (51), and therefore, the phototransistor (4) in the photocoupler (4) is not exposed to light, and the phototransistor (4) is in the off state. Become.

以上の動作を図示すると第５図のようになる。The above operation is illustrated in FIG. 5.

９＄５図におけるｆａＪ点は入力端子（７）に電圧を印
加した時を示し、（ａ）（ｂｌ間は入力端子（７）に電
圧を印加した状態を示し、（ｂｌ（Ｃ１間は入力端子（
７）の開放状態を示し、ｔｃｔ点は入力端子（７）を短
絡した時の状態を示す。（ｂｌｆＣ１間においてわずか
番こ発生している電圧はＬＥＤ（５１の動作電圧である
。The faJ point in Figure 9 shows the state when the voltage is applied to the input terminal (7), and the state between (a) and bl shows the state where the voltage is applied to the input terminal (7), and the state where the voltage is applied to the input terminal (7) between (bl (C1) Terminal (
7) is shown in the open state, and the tct point shows the state when the input terminal (7) is short-circuited. (The voltage slightly generated between blfC1 is the operating voltage of the LED (51).

〔３〕　　発明の効果 叙上の如くこの発明による半導体スイッチ回路によれば
、入力端子の両端を短絡するだけで負荷電流を遮断でき
、ゲートターンオフサイリスタと同様の動作を入力信号
に負電圧を印加することなしに実現できるのである。[3] Effects of the Invention As described above, according to the semiconductor switch circuit according to the present invention, the load current can be cut off simply by shorting both ends of the input terminal, and the same operation as a gate turn-off thyristor can be achieved by applying a negative voltage to the input signal. It can be achieved without doing anything.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第３図は従来例を示す図で、第１図は回路図
、第２図及び第３図はグラフ、第４図及び第５図はこの
発明の一実施例を示す図で、第４図は回路図、第５図は
グラフである。 特許出願人 松下電工株式会社 代理人弁理士　　竹　元　敏　丸 （ほか２名） 第１図 第３図1 to 3 are diagrams showing a conventional example, FIG. 1 is a circuit diagram, FIGS. 2 and 3 are graphs, and FIGS. 4 and 5 are diagrams showing an embodiment of the present invention. , FIG. 4 is a circuit diagram, and FIG. 5 is a graph. Patent applicant Matsushita Electric Works Co., Ltd. Patent attorney Toshimaru Takemoto (and 2 others) Figure 1 Figure 3

Claims (1)

【特許請求の範囲】[Claims] （１）　　フォトトランジスタと発光ダイオードからな
るフォトカプラにおいて、フォトトランジスタの一端と
発光ダイオードの一端と結び、フォトトランジスタの他
端を負荷を通して電源の一端と、またＬＥＤの他端を電
源のもう一方の端子５こ接続し、入力端子を発光ダイオ
ードの両端と一致させた半導体スイッチ回路。(1) In a photocoupler consisting of a phototransistor and a light emitting diode, one end of the phototransistor is connected to one end of the light emitting diode, the other end of the phototransistor is connected to one end of the power supply through a load, and the other end of the LED is connected to the other end of the power supply. A semiconductor switch circuit with five terminals connected and the input terminals aligned with both ends of a light emitting diode.
JP57045405A 1982-03-19 1982-03-19 Semiconductor switch Pending JPS58162129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57045405A JPS58162129A (en) 1982-03-19 1982-03-19 Semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57045405A JPS58162129A (en) 1982-03-19 1982-03-19 Semiconductor switch

Publications (1)

Publication Number Publication Date
JPS58162129A true JPS58162129A (en) 1983-09-26

Family

ID=12718338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57045405A Pending JPS58162129A (en) 1982-03-19 1982-03-19 Semiconductor switch

Country Status (1)

Country Link
JP (1) JPS58162129A (en)

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