JPS58159012A - Manufacture of coupling vibrator unit - Google Patents

Manufacture of coupling vibrator unit

Info

Publication number
JPS58159012A
JPS58159012A JP4115882A JP4115882A JPS58159012A JP S58159012 A JPS58159012 A JP S58159012A JP 4115882 A JP4115882 A JP 4115882A JP 4115882 A JP4115882 A JP 4115882A JP S58159012 A JPS58159012 A JP S58159012A
Authority
JP
Japan
Prior art keywords
electrode
vibrator
electrodes
support
shows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4115882A
Other languages
Japanese (ja)
Inventor
Hirofumi Kawashima
宏文 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP4115882A priority Critical patent/JPS58159012A/en
Priority to GB08307141A priority patent/GB2117968B/en
Priority to US06/475,446 priority patent/US4633124A/en
Priority to CH145783A priority patent/CH657498GA3/fr
Publication of JPS58159012A publication Critical patent/JPS58159012A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0504Holders; Supports for bulk acoustic wave devices
    • H03H9/0509Holders; Supports for bulk acoustic wave devices consisting of adhesive elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0504Holders; Supports for bulk acoustic wave devices
    • H03H9/0514Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0519Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PURPOSE:To improve workability and impact resistance, by mounting a crystal oscillator on a supporting base seat. CONSTITUTION:On the upper and lower faces of a crystal oscillator on which an oscillating part 10 and two supporting parts placed on both its sides are formed as one body by etching, energizing electrodes 12, 13 are placed uniformly on the whole face, respectively, and as for the supporting parts, respectively, an electrode is placed on one face only, so that an electric field is not applied. A supporting pedestal 14 is formed in a recessed shape, and on both end parts 15, 16, electrodes 17, 18 and 19 are placed. The electrodes 18 and 19 are connected to side electrodes 20, 21 through an electrode 22 placed on the lower face of the supporting pedestal 14. In this way, on both the end parts 15, 16 of the supporting pedestal on which the electrode is placed, the crystal oscillator 10 is placed, and is supported and stuck by the oscillator end part. The supporting base on which the oscillator is mounted is mounted to lead wires 45, 46 thereafter.

Description

【発明の詳細な説明】 本発明Fi豪数の振動量−ドが結合した、いわゆろ結合
水晶振動子のユニット製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a unit of a so-called coupled crystal resonator in which a vibration amount of F i is coupled.

本発明の目的は周波#j[@度特性の優れ九Gテカット
水晶振動子を提供することにある0本発明の他の目的は
耐衝撃性に優れた水晶振動子ユニットを提供することに
ある。
An object of the present invention is to provide a 9G Tecat crystal resonator with excellent frequency #j[@degree characteristics.Another object of the present invention is to provide a crystal resonator unit with excellent shock resistance. .

温度特性の優れた、しかも0工(○ryataL工岬a
dasam )の小名い振動子t1!求する民生機器は
多くあるが、これらにはムチカット水晶握動子が使Ml
畜れて米え、しかし、最近は色々な民生機器で小型化1
IX1にされ、それに伴つ1、ムチカット水晶S勅子も
小型化が要求され1米ているが、このタイプの振動子は
スプリアス振動(8p麺rioua741ゾロ14a%
]が多く小製化が難しく、同時に、小型化するとOXが
高くなってしまうのが実状である。41に、腕時計用水
晶振動子としてムチカット水晶振動子tf!帛する場合
相当に小抛化する必要が61音叉Il!IA自水晶振動
子と比較したとき、すイズの函では全く満足できるもの
ではない、そこて、最近は!aの技術を応用したフオ)
 IJソグラフイによhJI論子の形成方法が振動子馬
造に応用され、その結果、大変に小型の振動子を提供す
ることがで−るよ5になりた0例えば、振動子の厚みを
大変に薄(で寝る温度特性の優れたGTカット水晶振動
子に応用され、非常に小型のものが回部Kt)え、しか
し、このタイプは従来の物と異なり、両端で支持する形
状であるため、振動子ユニットの製造方法を工夫する必
要性が生じて来た。それ故、本発明は耐衝撃性と周波数
温度特性に優れた水晶振動子ユニットの製造方法を提案
するものであり、以下、図面に沿って本発明の詳細な説
明する。
Excellent temperature characteristics and 0 engineering (○ryataL engineering cape a)
dasam)'s famous oscillator t1! There are many consumer devices that require the use of whip-cut crystal grippers.
Damn it, but recently, various consumer devices have become smaller1.
IX1, and along with that, the whip-cut crystal S pin has also been required to be smaller, but this type of vibrator has spurious vibration (8p noodle rioua741 zoro 14a%).
], it is difficult to miniaturize the product, and at the same time, the actual situation is that the OX becomes higher when the product is miniaturized. 41, whip-cut crystal oscillator TF as a crystal oscillator for wristwatches! When using a 61 tuning fork, it is necessary to make it considerably smaller! When compared to IA crystal oscillators, the Suizu box is not at all satisfactory, but these days! Huo applying the technology of a)
The method of forming the hJI oscillator was applied to the construction of resonators by IJ lithography, and as a result, it became possible to provide extremely small resonators. It is applied to GT-cut crystal resonators with excellent temperature characteristics, and is extremely small. However, unlike conventional ones, this type is supported at both ends. , it has become necessary to devise a method for manufacturing vibrator units. Therefore, the present invention proposes a method for manufacturing a crystal resonator unit having excellent impact resistance and frequency-temperature characteristics, and the present invention will be described in detail below with reference to the drawings.

第1図に)とg3)t1本発明の結合振動子の形状と電
極の一実施例で、振動部2とその両側に配置された二つ
の支持部3とが一体に形成された0丁カット水晶振動子
の例である。第1図に)は平面図を1第1図(ハ)は上
面図を示す、水晶1の振動部2の上天4と下面5には励
振型1i6 、7が各々全面に一様に配置され、励振電
極6Fi一方の支持部3に延び工装置され、励振電極7
は他方の支持部3に延びて配置されている。即ち、支持
部には片面にのみ電極が配置され、電界が印加されない
構造となっている。従って、これは振動部のエネルギー
會できるだけ振動部内部に閉じ込め、支持部に伝達しな
いようになっている。換言すれば、振動部2から支持部
3へ延びた電極は電界を印加する九めに必要な端子電極
にすぎない、支持部3にまで延びた両電極に交番電圧を
印加することにょっ工容墨El!m子を励振することが
できる。又、幅Wと長さ乙によって2つのモードの共振
周波数は決定され、@WKよる主振動の共振周波数を/
’ e長さ−による副振動の共振周波数t/Lとすると
温度特性は両共I1w/4波数の差Δ/=/W−’/L
によってはぼ決まる。mち、辺比Rz W / Lによ
って温Il[4I性は決定される。第2図はフォトリソ
グラフィによって形Iitされた0丁カット水晶振動子
の温度特性の例で、結合の強さによって温度特性は真1
に9、主振動と副振動の結合が強いときは直線−のよう
に、又、弱いときは直線すのようになる、−次温度係数
1は2 、5xlO’ 7℃からl。
In Fig. 1) and g3) t1 One embodiment of the shape and electrode of the coupled vibrator of the present invention, a zero-cut cut in which the vibrating part 2 and two supporting parts 3 arranged on both sides thereof are integrally formed. This is an example of a crystal oscillator. Figure 1) shows a plan view, and Figure 1 (c) shows a top view.On the top 4 and bottom 5 of the vibrating part 2 of the crystal 1, excitation molds 1i6 and 7 are arranged uniformly over the entire surface. , the excitation electrode 6Fi is extended to one of the support parts 3, and the excitation electrode 7
is arranged to extend to the other support part 3. That is, the support part has a structure in which electrodes are arranged only on one side and no electric field is applied. Therefore, the energy of the vibrating part is confined as much as possible inside the vibrating part and is not transmitted to the support part. In other words, the electrode extending from the vibrating part 2 to the support part 3 is only a terminal electrode necessary for applying an electric field, and it is difficult to apply an alternating voltage to both electrodes extending to the support part 3. Yomoku El! It is possible to excite m children. Also, the resonance frequencies of the two modes are determined by the width W and the length O, and the resonance frequency of the main vibration by @WK is /
' If the resonance frequency of the sub-oscillation due to e length - is t/L, the temperature characteristics are both I1w/4 wave number difference Δ/=/W-'/L
It depends. The temperature Il [4I property is determined by the side ratio Rz W / L. Figure 2 shows an example of the temperature characteristics of a zero-cut crystal resonator shaped by photolithography.
9. When the coupling between the main vibration and the sub-vibration is strong, it looks like a straight line, and when it is weak, it looks like a straight line.

Q x 10−・/Cとバラツキ、良好な温度特性とな
らない、−跋的に作られる振動子はこのような温度特性
を有する。纂3図は本発明の振動子の振動部と支持部が
一体に成形され2G丁カット水晶振動子の辺比1 冨’
11 / Lと一次温度係数αとの関係を示す0辺比翼
が大暑(なるに従って、−次温度係数夜は人きくなり、
辺比Rが0.01変化したとも、−次温度係数αは約1
.3ガ鵬/℃変化する。第4図は本発明の0丁カット水
晶振動子のエツチング時間と辺比Rとの関係を示し、エ
ツチング時間を多くするに従って、辺比丘は徐々に小さ
くなっている。実験によるとエツチングを60分すると
辺比Rは約0.O1小さくなる。第5図は本発明のGT
カット水晶振動子のエツチング時間と一次温度係数αの
変化Δaとの関係を示す、エツチング時間約加分で一次
温度係数の変化Δぽは約−0,5pμ/℃と小さく、更
に、エツチング時間を増やしていくとΔaは更に小さく
なり、約60分後ではΔαは−1、3pyp+/℃とか
な9質化する。更に、エツチング時間を増やす事に°よ
ってΔαを更に小さくすることができる1次に、周波数
温度係数調整方法を具体的に説明する。
Variations in Q x 10-/C do not result in good temperature characteristics; vibrators that are widely manufactured have such temperature characteristics. Figure 3 shows the side ratio of a 2G cut crystal resonator in which the vibrating part and support part of the resonator of the present invention are integrally molded.
11/ As the zero side ratio showing the relationship between L and the first-order temperature coefficient α becomes very hot (the -th temperature coefficient becomes crowded at night,
Even if the side ratio R changes by 0.01, the -th temperature coefficient α is approximately 1
.. Changes by 3 ga/℃. FIG. 4 shows the relationship between the etching time and the side ratio R of the zero-cut crystal resonator of the present invention, and as the etching time increases, the side ratio gradually decreases. According to experiments, when etching is performed for 60 minutes, the edge ratio R is approximately 0. O1 becomes smaller. Figure 5 shows the GT of the present invention.
The relationship between the etching time of a cut crystal resonator and the change Δa in the primary temperature coefficient α is shown. As the temperature is increased, Δa becomes even smaller, and after about 60 minutes, Δα becomes -1, 3 pyp+/°C, or something like 9 quality. Furthermore, a first-order frequency temperature coefficient adjustment method that can further reduce Δα by increasing the etching time will be specifically explained.

第1図に)、 CB)の0丁カット水晶振動子はフォト
リソグラフィによって形M、されたとき、次のような特
性を持つように設計する。
The zero-cut crystal resonators shown in Figures 1) and CB) are designed to have the following characteristics when formed into a shape M by photolithography.

(1)−次温度係数値は正のI[を持つ、具体的には+
2 、51pm/ Cから+1 、 Opyn / C
の範凹に入るようにする。
(1) The −th order temperature coefficient value has a positive I[, specifically +
2, 51pm/C to +1, Opyn/C
so that it falls within the range of

(2)主振動の共振周波数は合わせ込む規準周波数f・
より高いat持つ0通常5002μ〜10002%高(
なっている。
(2) The resonant frequency of the main vibration is the reference frequency f・
0 with higher at usually 5002μ~10002% higher (
It has become.

このような振動子は形状、エツチング時間を選択すると
とによって容品に得られる0次に、この振動子をエツチ
ングによって形底後ある任意の温度に置龜、この温度を
サーiスター等の温度計によってII!拳取〕、この温
度ttt  とする。このときの主振動の共振周波数/
s t−測定する。更に、他の任意の温度Kllll励
振動子き、この時の温ft意と共振同波数!、を前記と
同様に読み取る、温ftstmと共振周波数/s  −
f*によって次式から一次温度係数mを求める。
Such a vibrator can be obtained by selecting the shape and etching time, and after etching the bottom of the vibrator, it is placed at a certain arbitrary temperature, and this temperature is adjusted to the temperature of a thermometer, etc. By total II! ], and this temperature is ttt. The resonance frequency of the main vibration at this time/
s t - measure. Furthermore, if the excited oscillator is set at any other temperature, the resonance wavenumber is the same as the temperature at this time! , read as above, temperature ftstm and resonance frequency/s −
The primary temperature coefficient m is obtained from the following equation using f*.

又、合わせ込む蝿準周波数f、會使って書き改めると次
のようKなる。
Also, if we rewrite it using the fly quasi-frequency f and the frequency to be matched, we get K as follows.

この■、@式からgを求める。即ち、外形エッチング成
形後の温度係数を実測して求める。第6図は本発明のG
Tカット水晶振動子の外形エツチング後のαがlpμ/
℃厘線ムと2 、5 pyrs/ C厘MBの場合のa
を零にするエツチング時間との関係を示す、αが1pμ
/℃のとき、αを零にするには、約45分エツチングす
れば良い、更に、直カ2 、5 pμ/℃のときは約1
15分エツチングすればαを零にする事ができる。この
ように、本発明では一次温度係数αを温度’is!II
と共振周波数/l  =fmから求め、又、エツチング
時間とgitlI線の関係にあるから、各々のgtlc
対するエツチング時間を管理することによって一次温度
係数αをほとんど零にすることができる。尚、本発明の
0丁カット水晶振動子の二次、三次の温度係数は一次温
度係数aに比して相当に小さいので無視することができ
る。第7図は本発明の方法によって温度係数を調整した
温lIL%性の一実施例である。[線Gは外形エツチン
グ後の温度特性で1は約1 、57PXK/Cと大きく
、温度特性は良(ない、これに比し1厘線りはエツチン
グによって更に、70分間エツチングした後の温度特性
で一次温度係数Cは約0 、1 ppm/cと相当小さ
く、優れた温度特性を得ることができた。しかし、第7
図で得られたil!ilDは温度特性は優れているが主
II論の共振周波数は親電周波数f、よC3000〜5
ooo pFIズしているので調整する必要がある。こ
のようにして振動子の外形形状をエツチングによってg
形後振動子は支持台にマウントされる。第$llに)、
に)、0はGテカット水晶振動子10を本発明の支持台
座14 K wラントしたときの一実施例でIIa図に
)は正msa、第8図伊)は第8図に)の下面図、第8
図0はJ[8図に)の下面図を示す。支持台座14は!
!形状に形成され、両端部15 、16は平面で、その
上に電1i17 、18 、19が配置されている。電
極部と電極19は儒画電4Ii加、乙と支持台座14の
下面に配置された電1i22を介して接続されている。
Calculate g from this ■ and @ expressions. That is, the temperature coefficient after the outer shape etching is actually measured and determined. Figure 6 shows the G of the present invention.
α of T-cut crystal resonator after external etching is lpμ/
a in the case of ℃ ri line MU and 2,5 pyrs/C rin MB
α is 1 pμ, which shows the relationship with the etching time that makes
/℃, to make α zero, it is enough to etch for about 45 minutes, and when the direct force is 2,5 pμ/℃, it is about 1
α can be reduced to zero by etching for 15 minutes. In this way, in the present invention, the first-order temperature coefficient α is defined as the temperature 'is! II
and the resonance frequency/l = fm, and since there is a relationship between the etching time and the gitlI line, each gtlc
By controlling the etching time, the primary temperature coefficient α can be made almost zero. Incidentally, the second-order and third-order temperature coefficients of the zero-cut crystal resonator of the present invention are considerably smaller than the first-order temperature coefficient a, and can therefore be ignored. FIG. 7 shows an example of temperature lIL% properties in which the temperature coefficient was adjusted by the method of the present invention. [Line G shows the temperature characteristics after external etching. 1 is about 1, 57PXK/C is large, and the temperature characteristics are good (in contrast, the 1-ring line shows the temperature characteristics after etching for 70 minutes. The first-order temperature coefficient C was approximately 0.1 ppm/c, which was quite small, and excellent temperature characteristics could be obtained.
Il obtained in figure! ILD has excellent temperature characteristics, but the resonance frequency of the main II theory is the electrophilic frequency f, yo C3000~5
ooo pFI has changed, so it needs to be adjusted. In this way, the external shape of the vibrator is etched
After shaping, the vibrator is mounted on a support. ),
), 0 is an example when the G Tecat crystal resonator 10 is mounted on the support pedestal 14 of the present invention, Figure IIa) is the normal msa, and Figure 8) is the bottom view of Figure 8). , 8th
FIG. 0 shows a bottom view of J [in FIG. 8]. Support pedestal 14!
! The end portions 15 and 16 are flat, and the electric wires 1i17, 18, and 19 are arranged thereon. The electrode portion and the electrode 19 are connected to the Confucian picture electrode 4Ii and the electrode 1i22 arranged on the lower surface of the support base 14.

このように電極配置1れた支持台14の両端部15. 
、16に水晶l1IIII子Wが配置i11れ、振動子
端部で接層剤、hhVhは、半田等ル、24によって支
持固層される。仁の支持1i1fKよって水晶振動子1
oの励振電極12 、13の円、電極【2は電極17に
、電極13は電極19と接続され、電極部、 22 、
21を介して電極18と同極になる。即ち、支持台座1
4の電極を前記したように配置する事によって電極17
 、18の2jll子構造にする事ができる。電極部、
 21 、22は分かりやすくするために賽物よp太く
描いである。このように、振動子を支持台にマウントす
る事によって耐衝撃性に優れた振動子にする事ができる
。第9図に)、(ハ)、(0)はGTカット水晶振動子
6を本実―の支持台座26に−fウントしたときの他の
実施例で1g9図に)は正面図、第9図に)は第9図に
)の下面図、第9図(9は第9図Φ)の下面図を示す、
支持台塵加は凹形状に形成され、両端部n、28には溝
ツ。
Both ends 15 of the support base 14 with the electrodes arranged in this manner.
, 16 are arranged with a crystal l1III element W (i11), and a layering agent (hhVh) is supported and fixed by a solder (24) at the end of the vibrator. Crystal oscillator 1 by Jin's support 1i1fK
o excitation electrodes 12, 13 circles, electrodes [2 are connected to electrodes 17, electrodes 13 are connected to electrodes 19, electrode parts, 22,
It becomes the same polarity as the electrode 18 via 21. That is, the support base 1
By arranging the electrode 4 as described above, the electrode 17
, can be made into a 2jll child structure of 18. electrode part,
21 and 22 are drawn thicker than the saimono to make them easier to understand. In this manner, by mounting the vibrator on the support base, the vibrator can be made to have excellent impact resistance. 9), (c), and (0) are other embodiments when the GT-cut crystal resonator 6 is mounted on the main support pedestal 26; Figure 9) shows the bottom view of Figure 9), Figure 9 shows the bottom view of Figure 9 Φ,
The support base plate is formed in a concave shape, and grooves are provided at both ends (n, 28).

(資)、 31 、32が設けられ、その上に電極部、
34.35が配置されている。電極具と電極35#′i
儒面電極菖、37と支持台座屓の下面に配置された電極
あを介して接続され工いる。このように電極配置された
支持台座あの溝31 、32の中に水晶振動子δが配置
され、振動子WAmで11層剤、あるいは、牛田等諺、
40によつ工支持固W−!れる。この支持固fKよって
水晶振動子25に配t11された励振電極41゜42の
内、電極41Fi電極33に、電極42は電極部と接続
され、電極36 、38 、3′7を介し工廠愼あと岡
11Kする。このように溝に振動子をマウントする事に
よって、耐衝撃性に優れる事は勿論であるが、振動子の
セットが更に答鳥になり、更に、作業性を良くすること
ができる。振動子がマウントされた支持台は次KJ−ド
線にマウントされる。
(capital), 31, 32 are provided, and an electrode part,
34.35 are placed. Electrode tool and electrode 35#'i
The Confucian electrode iris 37 is connected to the electrode 37 disposed on the lower surface of the support pedestal. A crystal oscillator δ is placed in the grooves 31 and 32 of the support pedestal in which the electrodes are arranged, and the oscillator WAm has 11 layers, or as Ushida et al.
40 Yotsuko support solid W-! It will be done. By means of this support fK, among the excitation electrodes 41 and 42 arranged on the crystal oscillator 25, the electrode 41Fi is connected to the electrode 33 and the electrode 42 is connected to the electrode part through the electrodes 36, 38, 3'7. Oka 11K. By mounting the vibrator in the groove in this manner, not only is the shock resistance excellent, but the vibrator set becomes more stable and workability can be further improved. The support base on which the vibrator is mounted is mounted on the next KJ-domain.

纂1011嬬第81aに)、(至)、0で示した本発明
の支持台座43をステム44に設けられた支持リード線
411.46にマウントしたときの一実施例の平面図を
示す、水晶振動子470表面電極48は支持台塵43の
電極49と接続され、裏面電極(図示されていない)F
i電j5Gに接続され、更に下面電1i(図示されて亀
い]t−介して電極51に接続されている。電極49.
51は支持リード線45.46に接着剤、To為いは、
半田等52.53によって支持v7A層され、2端子構
造54,55t−成している。1ll1図は第9図に)
a (B) 、 (0)で示した本発明の支持台座56
iステム57に設けられた支持す−ド融58,59にマ
ウントしたときの他の実施例の平面図を示す。水晶振動
子60は支持台座56に設けられた溝62.63に配置
され、後層剤、あるいは、半田等64.65によって支
持部Mされる。水晶振動子60の表面電′#A61は電
極66゛に接続され、裏面電極(図示されてない]は電
極67に接続され、更に、側面、下面電極(図示されて
ない〕を介して電極68に接続され為、又、ステム57
に設けられ九支持リードSSS、59は支持台座56に
設けられた溝69.70に配置され、接層剤、あるいは
半田等71,7!によって支持固着され、電極66.6
8と接続され、21m11子構造73.74を構成する
。尚、支持台座はセラミック、あるいは水晶等の絶縁材
料でできていて、電極には金、銀等が使用される。更に
、水晶振動子を支持固層する支持台の電極配置構造を工
夫するととKよって水晶振動子を支持台にマウントした
時点で211111子構造を構成で自るので支持リード
線をマウントするのが容易とな夛作業性に優れる0次に
、規準周波数/eK合わせ込む方法を説明する。第12
i1i1は纂10図の0丁カット水晶振動子に錘)84
.8fi、86.87を蒸着によって配置した例で、第
13図は第11図のGTカット水晶am子に錘388,
89,90,91’を蒸着によって配置した他の例であ
る。第14図は錘)の付看量と生揚の共振周波数の変化
との関係を示す、鍾夛の付眉量が増えるに従って生揚の
共振周波数は低(なり、生揚の共振周波数のズレが50
00ガ鳴ズしていても規準周波数f、に合わせ込む事が
で龜ることが第14図から分かる。第15図は1s12
図の鍾)114 、85 、86 、87.11113
図17)矯、$88.89.90.91を付層しタトき
の一次温度係数値との関係を示す、鍾りによってαは金
(変化しない事が分かる。即ち、温度特性上変化させず
に生揚の共振周波数を規準周波数10 K合わせ込む事
かで龜る0次に、第戊図、纂13図の水晶振動子は真空
中、あるいは、N意中で封入封止される。′tのとき、
特に、振動子の電気的特性を優先すると龜は真空封止を
、又、作業性を優先させると亀はM、封止が向いている
。第16図Iri本発明の製造方法によって得られた結
合振動子ユニットの一例の外観図である。
A plan view of an embodiment when the support pedestal 43 of the present invention indicated by 0 is mounted on the support lead wire 411.46 provided on the stem 44. The surface electrode 48 of the vibrator 470 is connected to the electrode 49 of the support base dust 43, and the back surface electrode (not shown) F
It is connected to the electrode 5G, and further connected to the electrode 51 via the lower surface electrode 1i (not shown).Electrode 49.
51 is the support lead wire 45, 46 is glued, To is,
It is supported by a layer of solder 52, 53 and has a two-terminal structure 54, 55t. 1ll1 figure is in figure 9)
a Support pedestal 56 of the present invention shown in (B) and (0)
A plan view of another embodiment when mounted on support rods 58 and 59 provided on the i-stem 57 is shown. The crystal resonator 60 is placed in grooves 62 and 63 provided in the support pedestal 56, and is supported by a support M using a post-layer agent, solder, etc. 64 and 65. The surface electrode A61 of the crystal resonator 60 is connected to an electrode 66, the back electrode (not shown) is connected to an electrode 67, and the electrode 68 is further connected via side and bottom electrodes (not shown). Also, the stem 57
Nine support leads SSS, 59 are placed in grooves 69, 70 provided in the support base 56, and are coated with adhesive, solder, etc. 71, 7! is supported and fixed by the electrode 66.6
8, forming a 21m11 child structure 73.74. The support base is made of an insulating material such as ceramic or crystal, and the electrodes are made of gold, silver, or the like. Furthermore, if the electrode arrangement structure of the support base that supports and solidifies the crystal resonator is devised, a 211111 element structure will be formed when the crystal resonator is mounted on the support base, so it will be easier to mount the support lead wires. A method of adjusting the reference frequency/eK to the 0th order, which is easy and has excellent workability, will be explained. 12th
i1i1 is a weight on the 0-cut crystal oscillator shown in Figure 10) 84
.. 8fi, 86.87 are arranged by vapor deposition, and Fig. 13 shows a weight 388,
This is another example in which 89, 90, and 91' are arranged by vapor deposition. Figure 14 shows the relationship between the amount of weight added to the weight and the change in the resonance frequency of the weight.
It can be seen from FIG. 14 that even if the frequency is 0.00, it is difficult to tune to the standard frequency f. Figure 15 is 1s12
114, 85, 86, 87.11113
Figure 17) shows the relationship between the primary temperature coefficient value of the tatto layered with $88.89.90.91. The crystal oscillators shown in Figures 1 and 13 are sealed in a vacuum or in a nitrogen atmosphere. When t,
In particular, if priority is given to the electrical characteristics of the vibrator, vacuum sealing is suitable, and if workability is priority, M sealing is suitable. FIG. 16 is an external view of an example of a coupled resonator unit obtained by the manufacturing method of the present invention.

以上、述べたように本発明の結合振動子ユニットの製造
方法、即ち、外形形状をエツチングによって成形し、次
に、前記振動子を支持台座にマウントシ、その後、前記
支持台座をリード1iK−fラントし、更に、前記振動
子の共振周波数を規準周波数に合わせ込み、最後に、前
記振動子を封止することによって、生揚の共振周波数が
規準同波数に合わせ込まれた温度特性の優れた結合振動
子轡ニッ)1−提供する事がで1!た。更に1水晶振動
子を支持台座にマウントする事によって作業性の良い、
しかも、耐衝撃性に優れた振動子ユニットを提供する事
ができた。又、本発明の支持台座の電極構造が片側に2
端子構造となっているのでリード線をマウントするのが
容1で、かつ、作業性に優れているという効果を有して
いる。
As described above, the method for manufacturing a coupled resonator unit of the present invention is to form the external shape by etching, then mount the vibrator on a support pedestal, and then attach the support pedestal to the lead 1iK-f runt. Furthermore, by tuning the resonant frequency of the vibrator to the standard frequency, and finally, sealing the vibrator, a coupled vibration with excellent temperature characteristics in which the resonant frequency of the vibrator is tuned to the standard wave number is produced.子轡NI) 1-It's 1 to provide! Ta. Furthermore, by mounting one crystal oscillator on a support pedestal, workability is improved.
Moreover, it was possible to provide a vibrator unit with excellent shock resistance. Moreover, the electrode structure of the support pedestal of the present invention has two electrodes on one side.
Since it has a terminal structure, it is easy to mount the lead wire, and it has the advantage of being excellent in workability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(ト)、ψ)は本発明の結合振動子の形状と電極
の一実施例で、蚕動部と支持部が一体に形成されたG!
カット水晶振動子の例である。第1図(4)は平面図を
第1図0は上面図を示す。 111m図はフォトリングラフィによって形成されたG
!カット水晶振動子の温度特性の例を示すグラフでTo
h。 第3図は本発明の振動子の振動部と支持部が一体に形g
IIれKGテカット水晶振動子の辺比Rと一次温度係数
値との関係を示すグラフである。 第41sは本発明の()Tカット水晶振動子のエツチン
グ時間と辺比lとの関係を示すグラフである第5III
は本発明のGテカット水晶振動子のエツチング時間と一
次温度係数値t)変化Δaとの関係を示すグラフてhる
。 篇6図は本発明のGテカット水晶振動子のエツチング後
の直がlνFIB / TCと2 、5 pptn /
 c cr>場合の11を零にするエツチング時間との
関係を示すダツツでToh。 117m1は本発明の方法によって温度係数を調整した
温度特性の一実施例を示すグツ7である。 第8図(ト)、(ロ)、ρ)はGテカット水晶振動子を
本発明の支持台座にマウントしたときの一実施例で88
図(8は正面図、第8図−)は纂8図両の下面図、1g
8図0は第8図の)の下面図を示す。 第9図に)a P) * (o)ii()テカット水晶
振動子を本発明の支持台座にマウントしたと自の他の実
施例で第9上回は正面図、11g9図伊)上第9図に)
の下面図、第9図(0)ti第9図(ハ)の下大図を示
す。 @10図は88図(ト)#に)、0)で示した本発明の
支持台座をステムに設けられた支持リード線にマウント
し九ときの一実施例の平面図を示す。 第11図は第9図(ト)、 CB) 、 (0)で示し
た本発明の支持台座をステムに設けられた支持リード線
にマウントしたときの他の実施例の平面図を示す。 第12図は0丁カット水晶振動子に鍾りを蒸着によつ1
配置した例を示す平面図でおる。 第13図は0丁カット水晶揚動子に錘りを蒸MKよって
配置し1′を他の例を示す平面図である。 第14図は仲りの付眉量と1振の共振鴫波数の変化との
関係を示すダラ7である。 第5図は#Iりの付涜量に対する一次温度係数αとの関
係を示すグツ7である。 3116図は本発明の製造方法によって得られた結合振
動子エニットの一例の外観図を示す。 111.水晶    2.。、振動部 3゜0.支持@    4.、、上面 510.下面 6 、7 、12 、13 、41 、42 、 、励
振電極W・・・4I     L・・・長さ 10.25,47.藝0゜0.水晶揚動子14 、%、
43,66、、、支持台座15.16.27.2B、、
、両端部 17.18,19,33,34,35,49,50,5
1゜0.電@   20,21,36,37.、、l1
面電惚29.30,31,32,62.63.69.7
0.、。 溝   44,57.、ステム 1゜ 45.4@、5g、59.、支持リード線84.8&、
86,87,88,89.90゜91、、、鍾夛   
          以上第2ト1 第3図 第7図 第8図(A) 第8図(C) 第9図(C) 第10図 4 第爵■図
FIG. 1 (g), ψ) shows an example of the shape and electrode of the coupled vibrator of the present invention, in which the peristaltic part and the support part are integrally formed.
This is an example of a cut crystal resonator. FIG. 1(4) shows a plan view, and FIG. 10 shows a top view. The 111m diagram is a G formed by photolithography.
! A graph showing an example of the temperature characteristics of a cut crystal resonator.
h. Figure 3 shows that the vibrating part and supporting part of the vibrator of the present invention are integrally shaped like g.
2 is a graph showing the relationship between the side ratio R and the first-order temperature coefficient value of a KG Tekat crystal resonator. No. 41s is a graph showing the relationship between the etching time and the side ratio l of the T-cut crystal resonator of the present invention (No. 5III)
is a graph showing the relationship between the etching time and the first-order temperature coefficient value t) change Δa of the G-TEC crystal resonator of the present invention. Figure 6 shows the directivity after etching of the GTECAT crystal resonator of the present invention with lνFIB/TC and 2,5 pptn/
Toh with a dot showing the relationship with the etching time that makes 11 zero in the case of c cr>. 117ml is a pair of shoes 7 showing an example of temperature characteristics whose temperature coefficient is adjusted by the method of the present invention. Figures 8 (g), (b), and ρ) show an example of a G Tecat crystal resonator mounted on the support base of the present invention.
Figures (8 is a front view, Figure 8-) are bottom views of both sides of Figure 8, 1g
8.0 shows a bottom view of ) of FIG. Fig. 9) a P) * (o) ii () Another embodiment of a Tekat crystal resonator mounted on the support pedestal of the present invention. (See Figure 9)
The bottom view of FIG. 9(0)ti and the lower enlarged view of FIG. 9(C) are shown. Figure 10 is a plan view of an embodiment in which the support pedestal of the present invention shown in Figures 88 (G) #) and 0) is mounted on a support lead wire provided on a stem. FIG. 11 shows a plan view of another embodiment in which the support pedestal of the present invention shown in FIGS. Figure 12 shows a 0-cut crystal oscillator with a plating made by vapor deposition.
This is a plan view showing an example of the arrangement. FIG. 13 is a plan view showing another example of 1' in which a weight is placed on a zero-cut crystal lifter using steamed MK. FIG. 14 is a drum 7 showing the relationship between the amount of centering and the change in the number of resonance waves of one vibration. FIG. 5 is a shoe 7 showing the relationship between the primary temperature coefficient α and the amount of abrasion of #I. FIG. 3116 shows an external view of an example of a coupled resonator enit obtained by the manufacturing method of the present invention. 111. Crystal 2. . , vibrating part 3°0. Support @ 4. ,,Top surface 510. Lower surface 6, 7, 12, 13, 41, 42, Excitation electrode W...4I L...Length 10.25, 47. Art 0゜0. Crystal lifter 14,%,
43,66,, support pedestal 15.16.27.2B,,
, both ends 17.18, 19, 33, 34, 35, 49, 50, 5
1゜0. Telephone @ 20, 21, 36, 37. ,,l1
Menejo 29.30, 31, 32, 62.63.69.7
0. ,. Groove 44, 57. , stem 1°45.4@, 5g, 59. , support lead wire 84.8&,
86,87,88,89.90゜91...
Above, Part 2 To1 Figure 3 Figure 7 Figure 8 (A) Figure 8 (C) Figure 9 (C) Figure 10 4 Figure ■

Claims (1)

【特許請求の範囲】[Claims] 複数の振動モードが結合した結合振動子ユニットの製造
方法において結合振動子の外形形状をエツチングによっ
て成形する工程、前記振動子を支持台座に!ラントする
工程、前記支持台座をリードiIKマウントする工程、
前記振動子の共振同波数を親電周波数に合わせ込む工程
、次に1前記振動子を封止する工程からなる事を特徴と
する結合振動子ユニットの製造方法。
In the manufacturing method of a coupled vibrator unit in which a plurality of vibration modes are coupled, the step of forming the external shape of the coupled vibrator by etching, the vibrator is placed on a support pedestal! a step of mounting the support pedestal with a lead iIK;
A method for manufacturing a coupled vibrator unit, comprising the steps of: adjusting the resonant frequency of the vibrator to a parent frequency, and then sealing the vibrator.
JP4115882A 1982-03-16 1982-03-16 Manufacture of coupling vibrator unit Pending JPS58159012A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4115882A JPS58159012A (en) 1982-03-16 1982-03-16 Manufacture of coupling vibrator unit
GB08307141A GB2117968B (en) 1982-03-16 1983-03-15 Gt-cut piezo-electric resonator
US06/475,446 US4633124A (en) 1982-03-16 1983-03-15 Mount for quartz crystal resonator
CH145783A CH657498GA3 (en) 1982-03-16 1983-03-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4115882A JPS58159012A (en) 1982-03-16 1982-03-16 Manufacture of coupling vibrator unit

Publications (1)

Publication Number Publication Date
JPS58159012A true JPS58159012A (en) 1983-09-21

Family

ID=12600606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4115882A Pending JPS58159012A (en) 1982-03-16 1982-03-16 Manufacture of coupling vibrator unit

Country Status (1)

Country Link
JP (1) JPS58159012A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406682A (en) * 1993-12-23 1995-04-18 Motorola, Inc. Method of compliantly mounting a piezoelectric device
CN107710612A (en) * 2015-07-09 2018-02-16 株式会社村田制作所 Quartz plate and quartz vibrator

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131193A (en) * 1974-09-11 1976-03-17 Citizen Watch Co Ltd USUGATASUISHOSHINDOSHI
JPS52106288A (en) * 1976-03-03 1977-09-06 Seikosha Kk Method of finely adjusting frequency of quartz vibrator
JPS5444857A (en) * 1977-06-27 1979-04-09 Centre Electron Horloger Method of controlling characteristics of crystal oscillator
JPS5469985A (en) * 1977-11-15 1979-06-05 Seiko Instr & Electronics Ltd Piezoelectric vibrator
JPS55105420A (en) * 1979-02-06 1980-08-13 Seiko Instr & Electronics Ltd Frequency control method for piezoelectric oscillator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131193A (en) * 1974-09-11 1976-03-17 Citizen Watch Co Ltd USUGATASUISHOSHINDOSHI
JPS52106288A (en) * 1976-03-03 1977-09-06 Seikosha Kk Method of finely adjusting frequency of quartz vibrator
JPS5444857A (en) * 1977-06-27 1979-04-09 Centre Electron Horloger Method of controlling characteristics of crystal oscillator
JPS5469985A (en) * 1977-11-15 1979-06-05 Seiko Instr & Electronics Ltd Piezoelectric vibrator
JPS55105420A (en) * 1979-02-06 1980-08-13 Seiko Instr & Electronics Ltd Frequency control method for piezoelectric oscillator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406682A (en) * 1993-12-23 1995-04-18 Motorola, Inc. Method of compliantly mounting a piezoelectric device
WO1995017769A1 (en) * 1993-12-23 1995-06-29 Motorola, Inc. A method of compliantly mounting a piezoelectric device
CN107710612A (en) * 2015-07-09 2018-02-16 株式会社村田制作所 Quartz plate and quartz vibrator
CN107710612B (en) * 2015-07-09 2020-10-27 株式会社村田制作所 Quartz piece and quartz resonator

Similar Documents

Publication Publication Date Title
US4642508A (en) Piezoelectric resonating device
CN102684638B (en) Piezoelectric vibration device, piezoelectric vibrator, piezoelectric oscillator and electronic equipment
US7345410B2 (en) Temperature compensation of film bulk acoustic resonator devices
CN101114820B (en) Method for manufacturing piezoelectric resonator
JPH0150129B2 (en)
CN101847978A (en) Flexural vibration element and utilize the oscillator of this flexural vibration element
WO2011010521A1 (en) Surface mount crystal oscillator
EP0483358B1 (en) Ultra thin quartz crystal filter element of multiple mode
JP2000295065A (en) Piezoelectric vibrator and its frequency adjusting method
JP5423453B2 (en) Oscillator and oscillator
JP5668392B2 (en) Piezoelectric vibration element, piezoelectric vibrator and piezoelectric oscillator
JPS58159012A (en) Manufacture of coupling vibrator unit
US11101786B1 (en) HF-VHF quartz MEMS resonator
US3566166A (en) Mechanical resonator for use in an integrated semiconductor circuit
JP2007189492A (en) Method of manufacturing piezoelectric substrate, piezoelectric substrate, piezoelectric transducer, and piezoelectric oscillator
US7570126B2 (en) Tuning-fork type piezoelectric vibrating piece and oscillator
JPS6281807A (en) Piezoelectric thin film resonator
JPH09172346A (en) Piezoelectric resonance parts and manufacture of the same
JP2001257560A (en) Electrode structure for ultra-thin board piezoelectric vibration element
JP4513150B2 (en) High frequency piezoelectric vibrator
JP2007158457A (en) Piezoelectric oscillator and its fabrication process
JP2003273703A (en) Quartz vibrator and its manufacturing method
US6965274B2 (en) Thin film bulk acoustic resonator for controlling resonance frequency and voltage controlled oscillator using the same
JP2004207913A (en) Crystal vibrator
US6448699B1 (en) Octagonal electrode for crystals