JPS58158953A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the electrostatic damage of a semiconductor device by sealing the device with resin having electrical conductivity of the degree which does not affect the influence of the operation of the device. CONSTITUTION:Electrodes S, D are attached to N type source and drain layers 2 of a P type Si substrate 1, gate electrodes G1, G2 are formed on a gate oxidized film 3, and a P type layer 5 in an N type layer 4 is coupled to the electrodes S, G1. Carbon powder is mixed with epoxy resin to provide suitable conductivity in resin 6, and the resin 6 is used to seal. Parallel resistors R1, R2 are inserted to the protective diodes D1, D2 between the source and the gate, the resin can become the leakage pass of static electricity, and when the resistance between the electrodes is selected to approx. 5MOMEGA by regulating the mixed amount, the influence to the operation of an FET is reduced, and in case of high frequency FET, the leakage is approx. 1muA. According to this configuration, the static damage resistance for the FET can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin-sealed semiconductor device trap, and is particularly directed to a technique for preventing electrostatic breakdown of an insulated gate field effect transistor (MOSFET).

Although MOSFETs for high frequency amplification have a built-in impurity diode for preventing electrostatic damage on the same substrate, electrostatic damage to the gate is still likely to occur. In particular, in the case of a bipolar MO8FET that uses a high chest frequency, delays often occur because the capacitance of the Kogoshi diode is large and impedance matching cannot be achieved. For this reason, static electricity is generated by placing a resin-sealed MOSFET in a conductive case.
However, it is difficult to prevent electrostatic breakdown noise that occurs during measurement or when installed into equipment.The present invention was made to solve the above-mentioned problems, and its purpose is to An object of the present invention is to provide a reliable resin-punched semiconductor device with increased electrical breakdown resistance.

The present invention will be specifically described below with reference to Examples.

FIG. 1 is a sectional view showing the principle structure of an embodiment in which the present invention is applied to a bipolar MO8FET for high frequency amplification.

In the same figure, l is, for example, a P-type Si conductor board, and 2 is an N
Source and drain electrodes S of MOSFET in the type diffusion layer,
D is connected, and 3 is a gate insulating film on which gate 1 is connected.
One pole G, ,G, is provided. 4゜5 connects the PN junction (
A gate protection diode is constructed by connecting the two P-type diffusion layers 5 to the source S and the gate G, respectively. Note that the protection diode of the second gate G is omitted in the figure. The sources, drains, and gates are connected to lead terminals (not shown) via Au wires or the like. 6 is a resin molded body, and a part of the lead terminal comes to protrude outside the resin.

The resin molded body is made of a resin material such as epoxy thread resin mixed with a bed of carbon (C) powder or the like to impart appropriate conductivity. This conductive resin is selected so that the operation of the internal MQSFET is not affected by the leakage current caused by it (and has a conductivity that is effective in preventing electrostatic damage. For example, It is most desirable that the resistance between the electrodes pierced by the resin molded body be about 5 J').

According to the present invention described in the above embodiments, by sealing with a conductive resin mold body, a parallel resistance is applied to the source/gate holding diode D, I) as shown in FIG. It is the same as if R,,R, were inserted, and the resin mold body becomes a static electricity leak bus and the MQSFET
For example, if the voltage applied to the
In the case of 8FE'r, since only about 1 to .mu.A leaks, the present invention improves the resistance of the MQSFET to electrostatic damage, and also improves process control effects without changing the cost at all.

In explaining the present invention, a bipolar MO8FET was used as an example, but the present invention relates to power MO8FETs other than this, and bipolar transistors for high frequency amplification.

It can be similarly applied to bipolar/MQSIC, etc.

[Brief explanation of drawings]

Figure 1 shows the I of the resin-sealed bipolar MO8FET according to the present invention.
A sectional view showing the IA physical structure, Figure 2 is the M shown in Figure 1.
It is a circuit diagram equivalent to QSFET. 1... Semiconductor substrate, 2... Diffusion layer, 3... Gate insulating film, 4, 5... Diffusion layer, 6... Resin mold body.

Claims (1)

[Claims] 1. In a semiconductor device stuck with a resin mold body, a conductive material is used for the resin mold body. This conductive resin is designed to prevent the operation of semiconductor devices from being affected by leakage of 1 meter flow (and to provide conductivity that is effective in preventing electrostatic damage). Mounting. 2. The resin-embedded semiconductor device according to item 1, wherein the semiconductor device is an insulated gate field effect transistor and its gate protector. The resin-stamped semiconductor device according to claim 2, wherein the inter-electrode resistance is about 5 MΩ.