JPS58155746A - Cu alloy for lead of semiconductor device - Google Patents

Cu alloy for lead of semiconductor device

Info

Publication number
JPS58155746A
JPS58155746A JP3868082A JP3868082A JPS58155746A JP S58155746 A JPS58155746 A JP S58155746A JP 3868082 A JP3868082 A JP 3868082A JP 3868082 A JP3868082 A JP 3868082A JP S58155746 A JPS58155746 A JP S58155746A
Authority
JP
Japan
Prior art keywords
alloy
heat resistance
rare earth
lead
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3868082A
Other languages
Japanese (ja)
Other versions
JPH0310698B2 (en
Inventor
Kozo Yamato
山戸 浩三
Kiichi Akasaka
赤坂 喜一
Shigeo Shinozaki
篠崎 重雄
Taku Kuroyanagi
黒柳 卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP3868082A priority Critical patent/JPS58155746A/en
Publication of JPS58155746A publication Critical patent/JPS58155746A/en
Publication of JPH0310698B2 publication Critical patent/JPH0310698B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:To obtain a Cu alloy suitable for manufacturing leads with high bendability, strength and heat resistance by a method wherein the material is composed of Cu with inevitable impurities, not more than 0.0010wt% oxygen and a total of 0.01-0.3wt% of one more out of Ni, Cr, Zr and rare earth elements, respectively weighing 0.05-1.0wt%. CONSTITUTION:Ni is added to ordinary Cu not containing oxygen to increase strength and heat resistance without degrading its electric and thermal conductivity. One or more out of Cr, Zr and rare earth elements are further added to the resultant Cu alloy to provide bendability while enhancing said features. The procedure for the production of such an alloy consists of melting together in a graphite-made crucible the accurately measured quantities of said substances, the casting of the molten metal, and the hot rolling of the resultant ingot. Cold rolling and annealing processes are repeated, to obtain a product taking a prescribed board form.

Description

【発明の詳細な説明】 本発明は半尋俸をt!系とするJlll器のリード(リ
ードフレームンとして愉格が責<1曲げ加工性か良好で
貴れた電気(a)tC尋性、Ij1度及び耐熱性に@す
るリード材用−合金に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention allows half a fathom salary to be reduced to t! Reeds for Jllll instruments (responsible as lead frames for lead materials with good bending workability, high electrical (a) tC resistance, IJ 1 degree, and heat resistance) - Alloys It is.

一般にIC,LSI等の半辱俸vII本とする礒器は例
れも半導体ペレット、アイランドリード及びポンディン
グワイヤ6二よって構成されたものを八−メデックシー
ル、セラミックシール又はプラスチックシールにより封
止したもので稙々の般式Vものが用いられている。これ
らaiaのリード(リードフレーム)材には次のような
特性が要求されている。
In general, ICs, LSIs, etc., are made of semiconductor pellets, island leads, and bonding wires, and are sealed with eight-medic seals, ceramic seals, or plastic seals. The basic general formula V is used. These AIA lead (lead frame) materials are required to have the following characteristics.

(11熱及び電気の伝導性が艮いこと。(11) Poor thermal and electrical conductivity.

(2)耐熱性が良いこと。(2) Good heat resistance.

(3)強度が^いこと。(3) Strong strength.

(4)曲げ加工性が良いこと。(4) Good bending workability.

従来半導体a!!のリード(9−ドフレーム)材には、
 i”@−29wt%Nゑ一1gwt%Co合盆(以)
wt%を単に5と略記)、k゛・−42%Ni合金、C
M−59i−0.2%P合盆5Cu−2,4%に’s−
0.13%Z、−α04%F合金が用いられている。し
かるにr@−29%Ni−18%C輪金、k’@−42
%Ni合盆及びCu−5%bn−QJ%P合金は優れた
Iji度、耐熱性と良好な曲げ加工性を有するも゛電気
(2)伝導性が看しく省り、かつ−格が^い欠点があり
、tたCu−24%に’a−α13%Zn−0#4%P
合金は充分なml[、WS性及び電気1)伝導性を有す
るも曲げ加工性が劣る欠点がある。
Conventional semiconductor a! ! The lead (9-dead frame) material of
i”@-29wt%Nゑ1gwt%Cobon (hereinafter)
(wt% is simply abbreviated as 5), k゛・-42% Ni alloy, C
M-59i-0.2%P Gobon5Cu-2.4%'s-
A 0.13% Z, -α04% F alloy is used. However, r@-29%Ni-18%C ring metal, k'@-42
%Ni alloy and Cu-5%bn-QJ%P alloy have excellent Iji degree, heat resistance and good bending workability, but they have relatively low electrical conductivity and low grade. There is a drawback that tCu-24% has a-α13%Zn-0#4%P
Although the alloy has sufficient ML[, WS properties, and electrical conductivity, it has the disadvantage of poor bending workability.

本@明はこれ直二礁み植々研究の結果、リード(リード
フレーム〕として一裕が女く1曲げ加工性が良好で前記
C41−24%k”*−(Ll 3% Zn−0,04
% k’合金と向寺以上の**、 #熱性及び゛−電気
)伝導性な有■る半導体at器のジー)°材用−合金を
rjm 発L タモQ) テ、hto、os〜t、0%
ト、Cr、 Zr、希土類元系の向れかl植又は2樵以
上1合針0.01〜0.3%ム(J、L)、(JL)1
08M−F″に:含み、asL:uと不T”IN的不純
刊からなることを特倣とするものである。
As a result of this research, Kazuhiro has found that the lead (lead frame) has good bending workability and the C41-24%k''*-(Ll 3% Zn-0, 04
% K' alloy and Mukodera or higher **, #thermal and electrically conductive semi-conductor at equipment G) ° alloy for rjm generation L TamoQ) te, hto, os~t ,0%
(J, L), (JL)1
08M-F'': includes, asL:u and non-T''IN impure publication.

縛も1本発明に工鳩冨の一敵巣一にhsを疹加すること
6二より、−特有の″鴫5a曙フ伝尋性を着しく劣化さ
せることなく1強直及び耐熱性を向上し、これにCr、
 Zr、布土緒7CAの何れかl麺又#1L2植以上な
績加することにより、颯気備フ伝導性tあまり亀上させ
ることなく、強度及び耐熱性に貴に向上せしt)、禰げ
加工性が良好で。
By adding HS to the present invention, we improved the stiffness and heat resistance without significantly deteriorating the characteristic "Akebono Fu" conductivity. And this, Cr,
By adding Zr, Fudo 7CA or more of #1L2 or more, the strength and heat resistance can be significantly improved without increasing the conductivity too much. It has good finishability.

就米tJJ L:u−′L4%に’s −0,13%Z
ss−0,04%P合強と一等以上の*v、msa性及
び喝5a(至)伝導性を有する合鍵を慢だものである。
Working in America tJJ L: u-'L4% to's -0,13%Z
It is arrogant to have a duplicate key with ss-0,04%P combination strength, *v, msa characteristics and 5a (up to) conductivity of first class or higher.

しかして1本発明合金において、その−数編1lIfi
k上紀の如く繊定したのは次の造出によるものである。
However, in one of the alloys of the present invention, the number of parts 1lIfi
The reason why it was refined as it was in the Upper K Period is due to the following creations.

0□言有鳳を9.0010%4ドと臘芝したのは、谷珍
加元素の酸化を防止してそれぞれ有効に作用させるため
で、0.含を置が0.0010q11kj11%えると
各績加元系の酸化が庄じ所期の幼果が得られないためで
ある。またへi含有量を0.05〜1.0%と幽芝した
のはその含有量が上限未満では81T溢の1度及び耐熱
性が優られず、上@t−越えると一気(ト)伝導性の低
Fが着しくなるためである。またCr。
The reason why 0□Konariho was added to 9.0010%4 is to prevent the oxidation of the Tani Chinka elements and make them work effectively. This is because if the content is increased by 0.0010q11kj11%, the oxidation of the oxidation system will increase and the desired young fruit will not be obtained. In addition, the reason why the i content is set at 0.05 to 1.0% is that if the content is less than the upper limit, the heat resistance will not be as good as 81T, and if it exceeds the upper limit, the heat resistance will be deteriorated. This is because low F conductivity becomes difficult to adhere to. Also Cr.

Zr、希土類元系の40jれか1棟又は2棟以上の合計
含有量を0.0l−(L3%と限足したのはそれぞれ単
独又は合計含有量がF@未調では充分な強度と耐熱性が
優られず、上@Vt鴫えると電気(II&)伝導性の低
Fが着しくなるためである。
The total content of one or more of Zr and rare earth element 40J was limited to 0.0L-(L3%) because each individual or total content was F@Unconditioned, sufficient strength and heat resistance. This is because if the conductivity is not excellent and the upper @Vt is lowered, low F of electrical (II&) conductivity will occur.

向、希土類元素とはLζCe、Pr◆のCCk布土JI
I7c本で、これ等を単独又は混合物、特に布土秦元素
の製錬過程で得られるミツシュメタル(C1!40〜r
hO%、La20〜40転残部その他の希土類元系−と
して用いてもよい。
Rare earth elements are CCk Fudo JI of LζCe, Pr◆
In the I7c book, these are used singly or as a mixture, especially Mitsushmetal (C1!40~r
hO%, La20 to 40 residual parts and other rare earth elements may be used.

またCu地盆に#2−線姦−を用いて不疏ガス中で俗解
するか、又は亀11嵩爾や電気−を用いて真空中で俗解
する。これ◆の瑞盆に含まれる不号迩的不純物としては
IIIA′priの地金に含まれる程度であれば例等合
金の特性V−なうことはない。
In addition, it can be treated in a vacuum using a #2 wire in a Cu earth basin, or in a vacuum using a tortoiseshell or electricity. If the impurities contained in this ◆ Zuibon are to the extent that they are contained in the base metal of IIIA'pri, they will not affect the characteristics of the alloy.

以F、本発明合金を実施例について説明する。Hereinafter, examples of the alloy of the present invention will be described.

黒船ルツボ【用いて真空を中でm1表に不丁組成の合蚊
V俗跡鋳造し、中150戦離さ25N  鈍さ200m
11の鋳塊を作成した。この鋳塊について一一当I)2
.5m#Mした徴、再加熱して熱関圧m4二より申15
01111. lI#さ@ Ha ノ教トL タ*  
コレ”験況した畿〜閾比魅と腕純を一返して鍛終加工亭
40%、厚さ0.3腸の板&:仕上げた。これ等の数6
二ついて、 ’jut、紺島性、4気(至)伝導性及び
蘭げ加工性V−べた。七の軸米kf米合盆と比軟して1
1111表番;併記した。
Black ship crucible [Using a vacuum to cast a molded V-shaped specimen with an irregular composition on the surface of m1, medium 150 mm, distance 25 N, dullness 200 m.
Eleven ingots were created. About this ingot I) 2
.. 5m #M, reheated and heat pressure m42
01111. lI#sa@Ha NokyotoL ta*
This is what I experienced, and I returned the Ki-Threshold Himi and Arm Jun and finished the plate with a 40% finish and a thickness of 0.3 mm.The number of these was 6.
Second, 'jut, Konjima property, 4-Ki (to) conductivity and Range processability V-beta. Seven axis rice kf rice gobon compared to 1
1111 table number; also written.

@気(蛎−4性については、熱伝導性と相関の@係にあ
る+111嘔4!VJl#−Wasυ5に蕪づいて細定
り、*aV一ついてkt引@ 強31J hb−Z22
41 t:ihづいて固定した。
@Ki (As for the -4 property, it is in the @ section of the correlation with thermal conductivity +111 4! VJl#-Wasυ5 and becomes stable, *aV is one and kt is subtracted @ Strong 31J hb-Z22
41 t: Ih and fixed.

IIIt#l&性−二ついては、l#80.3腸の板よ
り−HJ−222L)Iに不された試験片を切出し、こ
れなアルゴン雰囲気中で100℃から700℃の1m1
ftで50℃の間隔で1時間加熱処理した倣、引l11
1i試@を行ない%縦軸&:引張彊さ、m軸に加熱温度
を取って軟化曲線を園き、これより加熱tillの引t
j強さと完全軟化した時の引張強さの相の番となる温I
t(半軟化温度)を求めた。
IIIt#l & Sex - Two, cut out a test piece from l#80.3 intestinal plate - HJ-222L) I, and heat it at 1 ml at 100°C to 700°C in an argon atmosphere.
Copying and drawing l11 heat treated at 50℃ intervals for 1 hour at ft
1i test @ was conducted, and the softening curve was drawn by taking the % vertical axis &: tensile strength and the heating temperature on the m axis, and from this, the tension of heating till was calculated.
J strength and temperature I, which is the phase of tensile strength when completely softened.
t (semi-softening temperature) was determined.

また曲げ加工性は犀さく1311mの&より中1051
m、長さ50mの短冊型試験片を切出し、そのLl−4
駅180°のvM看曲げを行ない1曲げ邸を観察して副
れやしわのない平aなものを曲げ加工性が良好というこ
とでQ印、*れ噂の欠陥が発生したものを曲げ加工性が
不良ということでX印、その中間のものをΔ印により表
わした。向、111衣中M3M 4二はミツシュメタル
(C@約50%)V用いた。
In addition, the bending workability is 1311m and 1051m.
m, cut out a rectangular test piece with a length of 50 m, and its Ll-4
Performing 180° vM bending at the station and observing the first bend, those that are flat with no side damage or wrinkles are marked with a Q mark as they have good bending properties, and those that have a rumored defect are marked with a * mark. Poor properties are indicated by an X mark, and those in between are indicated by a Δ mark. 111 M3M 42 used Mitsushmetal (C@approximately 50%) V.

m1表から明らかなようt:本発明合貧は例れも曲げ加
工性が良好でその特性は導電率60〜93%1Acl、
引張強さ46〜56峙/−1耐熱性350〜440℃の
@曲内にあり、従来合金であるCu−2,4%re −
0,13%Zn−0,04%P合盆(424)と同等以
上の特性を有し、かつ曲げ加工性が優れていることか判
る。史に従来合金であるCu−5%8n−0,2%P合
盆(ム23)やF@−29%Ni−18%Co合菫(ム
25)と比較1−てもばば同等のgi度及び耐熱性′J
k有し、尋@串ははるかに俊れていることが判る。
As is clear from the m1 table, all of the materials according to the present invention have good bending workability, and their characteristics include conductivity of 60 to 93% 1ACl,
Tensile strength: 46 to 56 / -1 Heat resistance: 350 to 440℃@curve, conventional alloy Cu-2.4%re −
It can be seen that it has properties equal to or better than those of 0.13% Zn-0.04% P Gobon (424), and has excellent bending workability. In comparison with the conventional alloys Cu-5%8N-0,2%P (Mu23) and F@-29%Ni-18%Co (Mu25), 1-Mobaba has the same gi. degree and heat resistance'J
It turns out that Hiro@Kushi is much better.

こねに対し本発明合金の帆威軸囲よりNi含有蓋の少な
い比較合曽ム13及びCr、 Zr、 M、Mの例れか
l檀父は2柚思上Q)合計含有蓋が少ないLt、牧舎m
A 14〜16では、何れも光分なgM度と耐熱性が得
られず、またへI含有量の多い比牧舎*4i7及びCξ
Zr、MlMの何れかl檜父は2柚以上の合計含有蓋の
多い比較合金准18〜20では−jれも辱1を串の低F
が着しいことが判る。
Comparative alloy 13 has a lower Ni-containing lid than the alloy of the present invention, and Lt has a lower total Ni-containing lid, and examples of Cr, Zr, M, and M. Pasture M
In A 14 to 16, none of them had the same gM degree and heat resistance, and Himakisha*4i7 and Cξ, which had a high I content,
For comparative alloys 18 to 20, which have a large total content of 2 yuzu or more, either Zr or MlM has a low F of skewer 1.
It turns out that it is comfortable to wear.

j!感二本発明舎並の組成軸−より0.含自重が多い比
較合金、421〜22ではIII&素との親和力の運い
添加元系であるCr、 7.r、 M、Mが鐘化し、充
分な−きがなくなり、瞳塊の健全性が劣II、かつ曲は
加工性が劣化していることが判る。
j! 0. Comparative alloys with a high self-weight content, 421 to 22, have Cr, which is an additive element system that has affinity with III and element, 7. It can be seen that r, M, and M have turned into bells, there is no sufficient sound, the health of the pupil mass is poor II, and the workability of the music has deteriorated.

このように本発明合金は半導体a器のリード(リードフ
レーム)として曲げ加工性が良好で、Ia度及びms性
が^く、特に磁気(匂の伝導性が看しく唆れている◆リ
ード釘として績着な効果な奥Tるものである。
As described above, the alloy of the present invention has good bending workability as a lead (lead frame) for a semiconductor device, has good Ia degree and MS property, and has particularly good magnetic (odor conductivity) ◆Lead nail As a result, it has a very effective effect.

Claims (1)

【特許請求の範囲】[Claims] 絹張υ5〜14)wt%と、Cr、Zr、希土類元素の
何れか1砿5Lは2纏以上を合計0.0ム〜Q、3vt
%とハ0m1−%剋Ft−含み、銑廊Cuと本町造的不
純物からなる半尋停ab器のラード材用南合曽。
Silk tension υ5~14)wt% and any one of Cr, Zr, rare earth element 5L is 2 or more pieces total 0.0μ~Q, 3vt
% and 0m1-% of Ft-containing, a half-fatty ab porcelain lard material made of piggyback Cu and Honmachi-zukuri impurities.
JP3868082A 1982-03-11 1982-03-11 Cu alloy for lead of semiconductor device Granted JPS58155746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3868082A JPS58155746A (en) 1982-03-11 1982-03-11 Cu alloy for lead of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3868082A JPS58155746A (en) 1982-03-11 1982-03-11 Cu alloy for lead of semiconductor device

Publications (2)

Publication Number Publication Date
JPS58155746A true JPS58155746A (en) 1983-09-16
JPH0310698B2 JPH0310698B2 (en) 1991-02-14

Family

ID=12531989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3868082A Granted JPS58155746A (en) 1982-03-11 1982-03-11 Cu alloy for lead of semiconductor device

Country Status (1)

Country Link
JP (1) JPS58155746A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770674A (en) * 1994-06-06 1995-03-14 Toshiba Corp Semiconductor device
CN113755714A (en) * 2021-06-22 2021-12-07 上海交通大学 High-thermal-conductivity copper alloy suitable for casting process and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770674A (en) * 1994-06-06 1995-03-14 Toshiba Corp Semiconductor device
CN113755714A (en) * 2021-06-22 2021-12-07 上海交通大学 High-thermal-conductivity copper alloy suitable for casting process and preparation method thereof

Also Published As

Publication number Publication date
JPH0310698B2 (en) 1991-02-14

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