JPS58154910A - Microwave semiconductor device - Google Patents

Abstract

PURPOSE:To obtain an amplifier having a function controlling a gate with a small size and a simple constitution, by providing two gate electrodes for a microwave semiconductor device having sources, a drain and the gates and providing each gate between the drain and the sources. CONSTITUTION:The gates 21, 35 are provided between the drain 22 and the sources 20, 22. One of incident microwave powers reaches the 1st gate 24 and the other arrives at the 2nd gate 25 via a phase shifter 10. When the phase differentce is zero, the semiconductor device acts like a conventional field effect transistor FET, the power is amplified and outputted via the drain 28. When the phase difference is 180 deg., the microwave power is consumed in the device entirely and no output is obtained. Then, the device using two FETs conventionally is saved for one FET by changing the phase amount of the phase shifter 10, allowing to constitute an amplifier (or an attenuator) having the function controlling the gain, or a switch.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a micro temporary conductor device with a gain control cap (or attenuator) and a switch as small shields.

Figure 1: A section of a field effect transistor (hereinafter referred to as FET) as a conventional microwave device of this image.
FIG. 2 is a block diagram of a JLT converter having a gain control function using the FjBT described above.

In FIG. 1, 11) is the source #, (2) is the drain electrode, (3) is the gate electrode, and (4) is the semiconductor N shield. f51 is a buffer! − is.

Also, in Figure 2, (6) and (7) are ET, 1
81 is a power divider, (9) is a power combiner, tlG is a phase shifter, ul is an input terminal, and a21Fi is an output terminal.

In Figure 2, the micro 282 power input from the input terminal Qll is distributed by the Fi power distributor (8). One side of the distributed micro-temporal force is increased by gT f61, resulting in the resultant force synthesis! After that, FET17
1, where it is amplified and sent to the power combiner (9).

Now, if we change the phase amount of the phase shifter here, PET (6
) The phase difference between the phase of the microwave amplified by FjiiTi7) and the phase of the microwave amplified by power combiner 1f91 and the phase of the microwave amplified by FjiiT i7) and reached the power combiner (9) also changes.

For example, a Wilkinson type cup 1 can be used as a power combiner (9).
If the above phase difference is 00, the above FgTt6 is used.
The micro-limb force which is jl- and the micro-branch force which is jl- and the micro-branch force which is above FgT (7) are combined by the force combiner (9) and reach the output terminal a21vc. On the other hand, the above phase difference is 1
In the case of 80', one micro tB1. The power is consumed by the inlay 7-I resistor and does not come out to the output terminal 02. In this way, by adjusting the phase amount of the phase shifter αG, the output power can be controlled.

It is possible to configure a switch (or an attenuator) or a switch that has a gain control function.

However, in the device shown in FIG. 2, two tjP! A FET power combiner with uniform f characteristics is required.

This has the disadvantage that the device becomes complicated and large.

The present invention provides a microwave semiconductor device having a source, a drain, and a gate, which has two electrically separated gate electrodes, and which connects the gate electrode between the drain electrode and the first source electrode. Between the disaster, the second game)
The present invention relates to a microwave semiconductor device characterized in that a quadrupole is provided between a drain electrode and a second source memory. The object of the present invention is to obtain a microwave semiconductor device suitable for diving equipment.

FIG. 3 is an f+ view of an embodiment of the microwave semiconductor device according to the present invention, and FIG. 4 is a # view thereof.

A first gate electrode 211 is provided between the drain terminal pole (2) and the first source electrode ≦1. The above drain - billion (2
) and the second source electrode is provided with a second gate "wL pole (to)".

FIG. 5 is a block diagram of an amplifier having a gain control function constructed using the microtechnology semiconductor device t according to the present invention.

Figure 〒- shows the gate terminal of O.

C is the second gate terminal, (to) is the source terminal of O, and @ is the drain terminal.

Micro i/i4 power rt#lL input from input terminal U
The force is distributed by the force divider (8), and one side is connected to the gate terminal (
(to) to (to), and the other one reaches the second gate terminal 4 through phase shift @. Now, by changing the phase amount of the #phase signal, the microwave reaches the gate terminal (to) of the above O1 symbol 2
The phase difference of the microwave that reaches the gate terminal of - also changes. When the phase difference is 00, the microwave semiconductor device operates exactly the same as a conventional device, and is amplified and reaches the output terminal surface via the drain terminal @t-. - 10,000, when the above phase difference is 180°, the microwave force is completely consumed within the above microwave semiconductor device, and the drain terminal JEa
It never comes out.

By changing the position @t of the phase shifter Uα in this way, it is possible to replace the conventional system using two ETs by simply using the four micro ETs, which is the much-anticipated invention. , an amplifier (or attenuator) or switch having a gain control function can be configured.

FIG. 6 is a perspective view showing another embodiment of the semiconductor device according to the present invention. In this way, a number of drays 7-billion (2
), the gate electrode (2), the second gate - billion tie
The source 4411 may have a structure in which the source 4411 is connected with a conductor such as a base plate 1 every 400 million valleys.

Note that although one or more has been described in terms of a microwave semiconductor device having a source, drain, and gate metal, the present invention may be applied to a pievora transistor having an emitter, collector, and spacer.

As described above, the microwave semiconductor device according to the present invention has two Kent electrodes separated from each other by air,
In addition, the structure is such that it is provided between the gate electrode of the gate electrode and the source electrode of the electrode, and between the second gate electrode of the cat drain electrode and the second source electrode. This has the advantage that an amplifier (attenuator) or switch having a gain@at distance can be constructed with a small and simple structure.

[Brief explanation of drawings]

Fig. 1 is a curved view of a single-field effect transistor as a conventional four-body device, Fig. 2 is a block diagram of an amplifier having a gain control function using the above-mentioned field-effect transistors, and Fig. 3 is , Ii of the microwave semiconductor device according to the present invention
! A perspective view of row A. Fig. 4 is a #h side view of the device shown in Fig. 3, and Fig. 5 is a block diagram of a gain control mJ machine-all-M stage device constructed using the micro technology semiconductor device according to the present invention. FIG. 7 is a perspective view showing another example of the microwave semiconductor device according to the present invention. The mountain in the figure is the source 14L pole, and (2) is the drain 1tli pole. (3) is gate-resistance, +41tlj cow conductor N・-0
(5j is a buffer layer, (6) and (7) are i'g'r
, +81 is a single power distributor. (9) is a power combiner, ``Ill'' is a phase shifter, and ``Ill'' is an input terminal. a2 is the terminal, the mountain is the first source, I2]J is the first gate, - is the second source, the terminal is the second gate, - is the first , (to) is the second gate terminal, and (to) is the first source terminal. The forehead is the second source terminal, the south is the drain terminal, and the @ line is the @ wire. In FIG. 9, the same or corresponding parts are designated by the same reference numerals. Agent 4 Nobuo - 1st chart 2nd figure) 3rd figure 11!4th figure 5th figure 6th figure

Claims (1)

[Claims] A microwave semiconductor device has a source, a drain, and a gate, and the current flowing between the source and the drain is determined by the gate voltage. In addition to setting up the Gate of Oli between the
The second gate Q is configured electrically separated from the first gate Q! A micro i semiconductor device that is characterized by the fact that it is a disaster.