JPS58154238A - 半導体結晶の製造方法 - Google Patents

半導体結晶の製造方法

Info

Publication number
JPS58154238A
JPS58154238A JP57038901A JP3890182A JPS58154238A JP S58154238 A JPS58154238 A JP S58154238A JP 57038901 A JP57038901 A JP 57038901A JP 3890182 A JP3890182 A JP 3890182A JP S58154238 A JPS58154238 A JP S58154238A
Authority
JP
Japan
Prior art keywords
tellurium
melt
substrate
crystal
cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57038901A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262049B2 (enrdf_load_stackoverflow
Inventor
Ryoji Okata
大方　亮二
Koki Nagahama
長浜　弘毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57038901A priority Critical patent/JPS58154238A/ja
Publication of JPS58154238A publication Critical patent/JPS58154238A/ja
Publication of JPS6262049B2 publication Critical patent/JPS6262049B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP57038901A 1982-03-09 1982-03-09 半導体結晶の製造方法 Granted JPS58154238A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57038901A JPS58154238A (ja) 1982-03-09 1982-03-09 半導体結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038901A JPS58154238A (ja) 1982-03-09 1982-03-09 半導体結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58154238A true JPS58154238A (ja) 1983-09-13
JPS6262049B2 JPS6262049B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=12538091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038901A Granted JPS58154238A (ja) 1982-03-09 1982-03-09 半導体結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58154238A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6262049B2 (enrdf_load_stackoverflow) 1987-12-24

Similar Documents

Publication Publication Date Title
DE4013143A1 (de) Selektives (cvd)-verfahren und geraet dafuer
DE69509678T3 (de) Epitaktische züchtung von siliciumcarbid und so hergestellte siliciumcarbidstrukturen
DE3872471T2 (de) Einrichtung fuer czochralski-einkristallzuechtung.
DE10247017A1 (de) SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm, Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist und eine elektronische Vorrichtung aus SiC
Singh et al. Photocontraction effect in amorphous Se1− xGex films
DE3781016T2 (de) Verfahren zur zuechtung eines multikomponent-kristalls.
Schneck et al. Space symmetry of the basic structure and incommensurate modulations in (Pb, Bi) 2 Sr 2 CaCu 2 O x superconductor single crystals
DE1769298A1 (de) Verfahren zum Zuechten eines einkristallinen Halbleitermaterials auf einem dielektrischen Traegermaterial
JPS58154238A (ja) 半導体結晶の製造方法
DE1614367A1 (de) Halbleiter mit mehreren auf einem Isolatortraeger angeordneten Bereichen verschiedenen Halbleitermaterials und Verfahren zu seiner Herstellung
DE3872644T2 (de) Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten.
EP0036898B1 (de) Verfahren zur Herstellung von Verbundwerkstoffen, bestehend aus Substraten und aus auf deren Oberflächen festhaftenden, metallischen Schichten metastabiler oder instabiler Phasen
DE4120258A1 (de) Verfahren zur herstellung einer schicht aus einem hochtemperatursupraleiter-material auf einem silizium-substrat
DE3002671C2 (de) Verfahren zur Herstellung eines Siliciumcarbidsubstrats
Migita et al. Molecular beam epitaxial growth of SrO and CaO with RHEED intensity oscillation
DE3783632T2 (de) Herstellungsverfahren einer niedergeschlagenen schicht.
DE69113010T2 (de) Artikel mit supraleiter/isolator Lagenstruktur und Verfahren zur Herstellung des Artikels.
DE2151346C3 (de) Verfahren zum Herstellung einer aus Einkristallschichtteilen und Polykristallschichtteilen bestehenden Halbleiterschicht auf einem Einkristallkörper
EP1163379B1 (de) Halbleiterscheibe mit dünner epitaktischer siliziumschicht und herstellungsverfahren
DE3881589T2 (de) Verfahren zur Herstellung supraleitender Kupferoxid-Schichten.
DE10004623A1 (de) Halbleiterscheibe mit dünner epitaktischer Schicht und Verfahren zur Herstellung der Halbleiterscheibe
DE4210613C2 (de) Einrichtung zur Beschichtung eines Substrates mit einem metalloxidischen Hoch-T¶c¶-Supraleitermaterial
de Kock et al. A New Method for Revealing Striations in High‐Resistive Floating‐Zone Silicon Crystals
JPH0761870B2 (ja) 高温超伝導薄膜の製造方法
Van der Kolk et al. Thermal stability of amorphous phases in vapour-deposited binary alloy thin films of palladium with vanadium, niobium and tantalum