JPS58153779A - Ion plating apparatus - Google Patents

Abstract

PURPOSE:To shorten the cooling time of a work, in an ion plating apparatus, by a method wherein a heater for heating the work is made possible to be housed in a recessed part provided to the side wall of a vacuum treating chamber and heating is stopped during ion plating. CONSTITUTION:A work 3 to be treated is attached to an enclosure 1 and high voltage is applied between an evaporation source 4 having molten Ti housed therein and the work 3 as a cathode within an inert gas atmosphere such as nitrogen to carry out the ion plating of Ti. In this case, the work 3 is preliminarily heated to about 500 deg.C by a heater 11 and this heater 11 is retracted into a recessed part 13 provided to the side wall of the vacuum treating chamber 1 during ion plating. Because the temp. has been lowered to some extent after ion plating treatment is finished, a cooling time is shortened as compared to a conventional method continuing heating during ion plating.

Description

[Detailed description of the invention] TECHNICAL FIELD The present invention relates to an ion blating device.

Conventionally, in this type of apparatus, a workpiece to which a high negative potential is applied is provided in a vacuum processing chamber, and a heater is provided on the side of the workpiece to completely heat the workpiece, and metal is evaporated from an evaporation source provided opposite to the workpiece. A type that forms a complete film is known, but in this case the heater is fixedly placed on the side of the workpiece and is operated even during ion blating. There is a drawback that work efficiency cannot be improved due to the long cooling time needed to take out the workpiece after finishing.

The present invention aims to eliminate these drawbacks, and includes a workpiece with a negative high potential σ) in a vacuum processing chamber, a heater on the side of the workpiece that completely heats the workpiece, and a heater facing the workpiece. In the case of the type in which the entire metal film is evaporated from an evaporation source provided in the IC, the heater is constructed such that it can be housed in a recess formed in the IC processing chamber.

An example of the apparatus of the present invention will be explained with reference to the drawings. In Fig. 1, (1) is an odor treatment chamber equipped with an X air exhaust hole (2),
) is a piston ring or other workpiece provided above the processing chamber (1), and (4) is a titanium or other bath water provided below the processing chamber (1) facing the workpiece (31). The workpiece (3) is fitted into a wheel-shaped holder (5a) made of a conductive material, as shown in FIG. For example, the surrounding frame (5) is inserted into the rotating shaft (6) of the processing chamber (1), which can be opened and closed together with the rotating shaft (61). Each rotary shaft (6) is connected to each other by a gear (8) so that one of them connects to the processing chamber (1).
When all the valves of the coupling (A) are connected to the drive shaft (9) inside, they will rotate at the same time. (11)al)
are a pair of heater units installed to heat the wall (2) above and below the surrounding frame (5). An external cylinder α4) Q41 is drawn into the formed recess o3Oa, and the workpiece (3) and the evaporation source (4) are faced to face each other to smoothly carry out the ion blating operation. The cooling pipes of9 (3) face the partial treatment chamber (1), and rapid cooling is performed by the cold air.

In the illustrated example, the evaporation source (4) is located inside the reading processing chamber (1).
A connecting rod (G) inserted inside and outside through the side wall 02 of the processing mackerel 1) is installed along the line rod αIQI. When driven by the reciprocating slide member, the evaporation source (4) moves within the processing chamber (1), and the upper blade moves from each movement position 1i1i to the workpiece (3), for example. The gold maple was steam-blated and a relatively uniformly distributed metal film was formed thereon. (C) is a hollow hot cathode electron gun that moves along with the moving evaporation source (4) to be located directly above it; @ is the process chamber (1) to its till wall; (B) chamber cylinder Q → other equipment The trolley to be released at the same time, tA, is fixed to the trolley (c).
C) is the electric motor of the drive shaft (9).

To see the entire operation, the rotating shaft (6) is completely removed from the surrounding frame (5) taken out from the vacuum processing chamber (1), and the holder (5a) with the workpiece (3) fitted thereon is completely pushed and pushed again. Attached to the surrounding frame (51), and further housing these inside the fully openable and closable 1gll wall (7) of the processing chamber (1),
One of the rotating shafts (6) is connected to all couplings (to).

Then, the inside of the processing chamber (1) is evacuated and 1111
Heater unit α1) α is fully protruded from within the four parts 0 (to) of 1 wall 1:1 (b), and the workpiece (3) rotated by V by the rotating shaft (6) from above and below is heated to, for example, 500°C. . When the unit (b) α retreats into the recess Ha, the evaporation source (4) and the hollow hot cathode electron gun are energized, and titanium and other metals from the evaporation source (41Z+-) evaporate. The rotating workpiece (3) is ionized by passing through the plasma discharge area, and a negative high potential is applied above it to prevent adhesion, that is, ion blating.During this ion blating, the heater unit (b) συ No heating is applied and the temperature of the workpiece (3) remains in the processing chamber (1) equipped with a cooling pipe (to).
However, the degree of decrease becomes somewhat smaller due to the heat generated by the injection of metal ions into the surface of the workpiece (31), and by the end of ion blating, the temperature is relatively lower than the initial temperature. Work (3)
t-The cooling time until the product is then taken out can be shortened.

During this ion silating, the evaporation source (4) moves within the processing chamber (1) and changes its position relative to the workpiece (3), so that the evaporation source (4) is relatively uniformly distributed over the p-nuclear workpiece (3). A film is formed.

As described above, according to the present invention, the heater for heating the workpiece can be housed in the recess formed in the vacuum processing chamber, so that the high-temperature workpiece after ion blating treatment can be placed opposite the relatively low-temperature side wall of the processing chamber. This has the advantage that it can be cooled quickly, improving processing efficiency, and that the volume of the processing chamber can be made relatively small by housing the heater in the recess.

[Brief explanation of drawings]

Fig. 1 is a cutaway front view of one example of the device of the present invention, Figs. 2 and 3 are an enlarged right side view and a side view of
The drawings are an enlarged cutaway plan view taken along the line IV--IV in FIG. 1, and FIG. 5 is a perspective view of the rotating shaft. (1)...Vacuum processing chamber, (3)...Workpiece, (
4)...Evaporation source, α〃αυ...Heater,
(to) Be...concavity. Patent applicant: Japan Vacuum Technology Co., Ltd.

Claims (1)

[Claims] A workpiece with a negative high potential in a vacuum processing chamber is separated from a heater that heats the workpiece on the other side, and a metal film is evaporated from an evaporation source installed opposite to the workpiece. 1. An ion silating device characterized in that the heater is configured to be freely accommodated in a recess formed in the X treatment chamber.