JPS58153308A - Manufacture of amorphous soft magnetic thin film pattern - Google Patents
Manufacture of amorphous soft magnetic thin film patternInfo
- Publication number
- JPS58153308A JPS58153308A JP3616482A JP3616482A JPS58153308A JP S58153308 A JPS58153308 A JP S58153308A JP 3616482 A JP3616482 A JP 3616482A JP 3616482 A JP3616482 A JP 3616482A JP S58153308 A JPS58153308 A JP S58153308A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- amorphous soft
- film
- soft magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は薄膜磁気デバイスの非晶質軟磁性薄膜から成る
磁性体パターンの製造方法に関する◎近都非晶質軟磁性
材料の研究が進められ、高透磁率材料やまた高磁歪材料
としてすぐれた磁気特性、特徴を有する（ Ｆ ｅ ＊
Ｎ ｉ 、Ｃｏ ） ８ ｔ ＠ Ｂ系や（Ｆｅ＊
Ｎｉ−０６） −Ｚｒ系等の非晶質軟磁性薄膜がスパッ
タリング等によって得られることがわかってきた。こう
した特性を活かして、Ｃｏ−８，８１系やＣｏｒＺｒ系
の高透磁率の非晶質軟磁性薄膜は薄Ｍａｉ気ヘッドや磁
気センサーに菫た鉄系の高磁歪定数の非晶質軟磁性薄膜
は歪センサーや磁気遅砥木子咎へと、Ｉト形でより高性
能の各種薄１ＩＩＢ気デバイスとして応用されようとし
ている。しかし、このような非晶質軟磁性薄膜は単に成
膜しただけでは十分な磁気特性は得られず、直＃ｌａ界
中アニールや回転磁界中アニール、高温からの急冷等の
熱処理が不可欠であり、通常は熱処理中の酸化等による
劣化を防ぐために高真空中や水嵩ガス雰囲気中で熱処理
か行なわれているｏしかし、爽際に非晶質軟磁性薄膜を
使った磁気デバイスを製造する場合、高真空中や水素カ
ス芽囲気中の熱処理では磁界の印加機構が複雑になる、
処急量が制限される、取扱いに注意を要する吟の因難か
めり、生童性は會わめて愚い〇
本発明の目的は、小形で為性能の薄膜磁気デバイスを容
易に大量に製造する方法を提供することにより、薄膜磁
気デバイスの磁性体パターンの製造において、試料基板
に非晶質軟磁性薄膜を成膜した上ｊ（＄磁性体を積層成
膜し、前記非晶質軟磁性前１［＄ｃ所定の磁気特性を付
与する熱地理を行なった後、前記非晶質軟磁性薄膜と非
磁性体膜とを積層したｉｔ所定の磁性体パターン形状に
加工する仁とを特徴とする＠
以下、図面に従って本発明の非晶質軟磁性薄膜パターン
の製造３＃＆を詳細に説明Ｔる０ｍ１ｌｌ（畠）（ｂ）
は磁気デノ！イスの一例である′Ｉｌ属磁気へラドの基
本的構成を示した断向因及び平面図である・薄膜磁気へ
ラドは基板ｌ上に形成された上下２枚の高透鼻率軟ｌｌ
性薄膜から成る磁性体ポール２．３、コイル導体４、絶
縁層５＊ ｈａ ７．８．及び電極端子９から構成され
、磁性体ポール２．３が磁気コアを形成する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a magnetic pattern made of an amorphous soft magnetic thin film for a thin film magnetic device.Research on amorphous soft magnetic materials has been progressing in recent years, and high magnetic permeability materials and It has excellent magnetic properties and characteristics as a high magnetostrictive material (Fe*
N i , Co ) 8 t @B series and (Fe*
It has been found that an amorphous soft magnetic thin film of Ni-06)-Zr or the like can be obtained by sputtering or the like. Taking advantage of these characteristics, Co-8,81-based and CorZr-based amorphous soft magnetic thin films with high magnetic permeability are used in thin magnetic heads and magnetic sensors. It is about to be applied to strain sensors and magnetic slow abrasives, as well as various thinner 1IIB devices with higher performance in the I-type. However, sufficient magnetic properties cannot be obtained by simply depositing such amorphous soft magnetic thin films; heat treatments such as direct field annealing, rotating magnetic field annealing, and rapid cooling from high temperatures are essential. In order to prevent deterioration due to oxidation during heat treatment, heat treatment is usually performed in a high vacuum or in a water-volume gas atmosphere. However, when manufacturing magnetic devices using amorphous soft magnetic thin films, In heat treatment in high vacuum or in an atmosphere surrounding hydrogen scum, the magnetic field application mechanism becomes complicated.
Due to the limited quantity, the need for careful handling, and the unreasonable nature of production, the purpose of the present invention is to easily produce large quantities of small-sized, high-performance thin-film magnetic devices. By providing a manufacturing method, in manufacturing a magnetic material pattern of a thin film magnetic device, an amorphous soft magnetic thin film is formed on a sample substrate. Magnetic Preparation 1 [$c After performing thermogeography to impart predetermined magnetic properties, the amorphous soft magnetic thin film and non-magnetic film are laminated and processed into a predetermined magnetic pattern shape. Hereinafter, the production of the amorphous soft magnetic thin film pattern of the present invention 3#& will be explained in detail according to the drawings.
is a magnetic deno! This is a cross-sectional view and a plan view showing the basic structure of a class II magnetic helad, which is an example of a chair.A thin-film magnetic helad is made of two high permeability soft plates, upper and lower, formed on a substrate l.
magnetic pole 2.3 made of a magnetic thin film, coil conductor 4, insulating layer 5* ha 7.8. and an electrode terminal 9, and the magnetic pole 2.3 forms a magnetic core.
菖２図（ａ） （ｂ） （ｅ）（ｄ’ｒ顛は本実喚を実
施して高透磁率の非晶質軟磁性薄膜から成る磁性体ポー
ルを＃造する例を工程に従ってボした断ｔｈｌ−である
。但しここでは下側の磁性体ボールの製造方法を図示し
て説明を行なうが、上１１磁性体ボールも同様にして製
作できる〇
第１に、絶縁された基板ｌ上に第２図（−のようにスパ
ッタリングや蒸着によって非晶質軟磁性薄膜１１を成膜
する０
次に、この上に更に漢２図伽）に示すように非磁性膜ル
を積層して成膜するＯこの段階では非晶賀歌磁性膜の磁
気特性は十分ではない０良好な磁気特性を得るため、直
流磁界中アニール、−転ｉＩｉ界中アニール、萬温から
の急冷尋の所定の熱処理を行なう。ここで熱処理は高真
空中や木本ガスｔｍ気中である必要はなく、単に窒素ガ
ス雰囲気や人気中であってもよい。この熱地ｍ鏝、所定
の磁性体ボール形＃に加工するため、フォトレジストプ
ロセス、つまりレジスト塗布、パターン露光、現像等に
よってレジストパターン１３を形成しＣＭ２１＠Ｉ（ｃ
））、１ｌＥ４オンミリング、スパッターエツチング等
によって非磁性体膜１２と非晶質軟磁性薄膜１１とを同
時にエツチングする（８２図（ｄ） ） 、最後にレジ
ストパターン口を除去して第２図（ｅ］のようＥｉｌ性
体ボール形成か終了する。ここで、高透磁率の非晶質軟
磁性薄膜としては（Ｆｅ＊Ｎ１−Ｃｏ） −１１ｉ、ｌ
系や（Ｆｅ、Ｎゑ−Ｃｏ）−Ｚｒ系、（Ｆ ｅ ｅ Ｎ
１ ＃Ｃ・）−Ｔａ４等か適している。また、非磁性
膜１２は熱処理中に非晶質軟磁性前１１１１が酸化等で
劣化するのを防ぐためのものであり、非晶質軟磁性薄膜
と反応しｋ（く、かつ酸化の進行を防ぐことかｅ會るピ
ンホールのない膜であればよ＜、ＳＯＯ〜１０００ムの
Ｔ ｌ ９ Ｃｒ ｋｌｓ ｆｌ Ｉｔ’し４１１００
０〜２０００ムのｓｉｏ雪やムＪ 掌Ｏｓ膜等の無機絶
縁体が適している。尚ξの非磁性ＩＩ！１２は特に除去
する必要はなく、テ轟やＣｒを使用した場合にはこの上
に積Ｊ１１される絶ＩＩＪＩ（ｔＩ＆１図、６）との接
着強度を向上てきるという利点があり、また、８＋ｏ雪
やｋｌｚｏｓ等の無機絶縁体を使用する場合には絶縁層
（第１図、６）の一部として機能するため、伺轡余分の
厚さを必要としないという利点を持つ。Diagram 2 (a) (b) (e) (d'r) The following shows an example of fabricating a magnetic pole made of an amorphous soft magnetic thin film with high magnetic permeability according to the process by carrying out this demonstration. However, here we will illustrate and explain the manufacturing method of the lower magnetic ball, but the upper 11 magnetic ball can also be manufactured in the same way. Figure 2 (- As shown in Figure 2, an amorphous soft magnetic thin film 11 is formed by sputtering or vapor deposition.Next, a non-magnetic film is further layered on top of this as shown in Figure 2). At this stage, the magnetic properties of the amorphous magnetic film are not sufficient.To obtain good magnetic properties, predetermined heat treatments such as annealing in a DC magnetic field, annealing in a -transfer field, and quenching from a temperature range Here, the heat treatment does not need to be in a high vacuum or in a wood gas tm atmosphere, but may simply be in a nitrogen gas atmosphere or in a trowel.This heat treatment is processed into a predetermined magnetic ball shape #. To do this, a resist pattern 13 is formed by a photoresist process, that is, resist coating, pattern exposure, development, etc.
)), the non-magnetic film 12 and the amorphous soft magnetic thin film 11 are simultaneously etched by on-milling, sputter etching, etc. (Fig. 82(d)), and finally the resist pattern opening is removed to form the etching pattern shown in Fig. 2(e). ] The formation of an Eil-like ball is completed. Here, as an amorphous soft magnetic thin film with high magnetic permeability, (Fe*N1-Co) -11i,l
system, (Fe, N-Co)-Zr system, (Fe e N
1 #C・)-Ta4 etc. is suitable. Furthermore, the non-magnetic film 12 is used to prevent the amorphous soft magnetic thin film 1111 from deteriorating due to oxidation during heat treatment. As long as the film has no pinholes that can prevent it, it is possible to use a film with a thickness of SOO ~ 1000 mm.
Inorganic insulators such as 0 to 2,000 µm SIO film or MUJOs film are suitable. Non-magnetic II of ξ! 12 does not need to be removed in particular, and when using Tedoro or Cr, it has the advantage of improving the adhesive strength with Absolute IIJI (tI & 1 figure, 6), which is stacked on top of it. When an inorganic insulator such as snow or Klzos is used, it has the advantage that no extra thickness is required since it functions as part of the insulating layer (6 in Figure 1).
次により具体的に、膜厚ＩＪｍの非晶質軟磁性薄膜から
成る磁性体ポールを形成する実施例を示し、本発明の効
果を説明する・
嬉１に、［１Ｍ１５００ ｏｉ−ｔＤ Ａｌ５ｏ ｓ
ＩＮ＋ＮＩ＆ Ｌ／ タム１ＩｌＯｓ・ＴｉＣ系セラミ
ックス基板上に膜厚ＩＪｍのＣｏ−・２０Ｏ非晶質軟磁
性薄膜、怠よび膜厚１ｏｏｏＸのムＪ＊Ｏｓｊ［を同一
スバシター装置中て連続的にスパッタリングして積層す
る。次にこれに窒素ガス雰囲気中て３Ｇ００ｅの直＃１
磁界を印加しＩＪがら２５０℃で１時間の！１１０目の
アニールを行ない、続いて第１１目と直交する方向＜５
ＯＯＯ＠の直ｆＩｉ、ａｉ界を印加しながら２５０ｔ：
１時間の菖２１目アニールを行なう◎＊に１通電のレジ
スト塗布、露光、現像を行なって磁性体ポール形状のレ
ジストパターンを形成してから膜厚１０００Ａのム１ｍ
ＱｓおよびｊｌＩｊｌｌｊａｎのＣｏ・・Ｚｒｓ・ を
イオンｔ１ンダによってエツチングし、レジストパター
ンを鎗資して磁性体ボールを形成する・こうして得られ
た磁性体ボールの磁気特性はＨｃが０．０１０・以下、
透磁率が２５００以上と、非常に透れた軟磁気４Ｉ性を
示した。これに対し、全くアニールを行なわなかったも
のではＨｅは２０６以上、 透磁率は１０００以下でし
かなく、アニールが不可欠であることを示している。ま
た、人！！０１膜を積層せずにＣｏ＊＊Ｚｒ＊・膜が露
出したままで上記のアニールを行なったものではＣｏ・
ｏＺｒｓ＠膜の表面か変色して劣化し、磁気特性は分散
的にｔぼり、透−率もＺｏｏ＠以下て不十分な特性しか
得られない〇これにより、十分な軟磁気特性のＣｏ＊ｏ
Ｚｒｔｏ ＪＩＩを得るのに五ｊｓＯｓ膜を積層するこ
とが大きな効果をもつことが示される◎更に、Ｃｏ ｔ
ｏ ７．ｌｓ・膜を成膜してすぐ磁性体ポール形状に原
工してから、もともとその上に積層されるべき絶縁層（
島１図６＃ｃｌｌ−するもの）を形成し、その後に上記
のアニールを行なう方法も考えられるが、−導体ボール
の量イズは小喜いため、反磁界効果が大きく、磁性体ボ
ール端付近ではＣｏ９・２目０の容１方崗が場所によっ
て異なってくるたｔに分数的になると共化磁区の不安定
化を招き、磁性体ボールとしての特性は不十分なものと
なってしまう。また、通常行なわれている様に上記アニ
ールを高真空中や水嵩ガス雰囲気中て行なえば同様に良
好な特性は得られるが、それらの方法では磁界の印加機
構が豪雑にｑつたり〜才た急冷ができない等でアニール
方法に制約が生ずる。またこの他庫扱いに注意を要する
、処理量を多くできない等々の欠点があって生産性がき
わめて悪い。尚、ここでは下側の磁性体ボールの形成の
例を示したが、上側のものでも全く同様にして形成する
ことができる。また、これまでの説明では非晶質軟磁性
体Ｔ４膜は直り下地の絶縁層（第１図の５）上に成膜す
るとしたがその間の接着強度を改善す゛るためにＴｉや
ＣｒＨを介在させる場合にも本発明の製造方法は何等本
質的変更は必要なく、単にこの接着強Ｊ［改曽膜と非晶
質軟磁性薄膜と非磁性体膜との３層を−」時にいっしょ
にエツチングすればよい。更に、以上の実施例では高透
磁率の非晶質軟磁性薄膜による磁気デバイスの例を示し
たが、高磁歪の非晶質軟磁性薄膜による磁気デバイスの
場合にも全く同様であるＯ
本発明は以上に説明したように、薄１ｍ１ａ気デバイス
の非晶質軟磁性薄膜から成る磁性体パターンの形成Ｋｍ
いて、試料基板に磁性体パターン材料である非晶質軟磁
性薄膜を成膜した上に非磁性体膜を積層成膜し、前記非
晶質薄膜と非磁性体膜とを積層したまま所定の磁気特性
を付与する熱処理を行なった後、前記非晶質軟磁性薄膜
と非磁性体膜上を積層したまま所定の磁性体パターン形
状に加工するξとにより、磁性体パターンとして非晶質
軟磁性薄膜を使用した、小形で高性能の薄ｉａａ気デバ
イスを容易化１大量に製造することができる・
１ＩＩＩｌｉの一単なｌ！明
嬉１ｓｏ（ロ）伽）はそれぞれ、薄膜磁気へＶドの基本
的構成をポした断藺図及び平函図であり、第２１ＩＩｌ
（ａ）（ｂ） （ｃ）（ｄ） （荀は本発明を薄膜磁気
へラドの磁性体ボール製造に実施した例を工程に従って
示す断函図である〇
図において、
１は試料基板、 ２．３はそれぞれ下側および上側の磁
性体ボール、 ４はコイル導体、ｓ、ｒｔ。Next, the effects of the present invention will be explained by showing an example in which a magnetic pole made of an amorphous soft magnetic thin film with a film thickness of IJm is formed in more detail.
IN+NI&L/Tum 1 A Co-.20O amorphous soft magnetic thin film with a film thickness of IJm and a film of MuJ*Osj with a film thickness of 100X were sputtered continuously in the same substrate on a IlOs.TiC ceramic substrate. Laminate. Next, in a nitrogen gas atmosphere, 3G00e direct #1
Apply a magnetic field and hold the IJ at 250°C for 1 hour! Anneal the 110th stitch, then annealing in the direction perpendicular to the 11th stitch <5
250t while applying direct fIi and ai fields of OOO@:
Perform 1-hour annealing for 21st irises. At ◎*, apply resist with one current, expose, and develop to form a resist pattern in the shape of a magnetic pole.
Co...Zrs... of Qs and jlIjlljan is etched by an ion t1 laser, and a resist pattern is used to form a magnetic ball.The magnetic property of the magnetic ball thus obtained is that Hc is 0.010.
It exhibited extremely transparent soft magnetic 4I properties, with a magnetic permeability of 2,500 or more. On the other hand, in the case where no annealing was performed, the He value was 206 or more and the magnetic permeability was only 1000 or less, indicating that annealing is essential. Also, people! ! If the above annealing was performed with the Co**Zr* film exposed without stacking the 01 film, the Co.
The surface of the oZrs@ film changes color and deteriorates, the magnetic properties dispersively go up to t, and the permeability is less than Zoo@, resulting in insufficient properties. This allows the Co*o film to have sufficient soft magnetic properties.
It is shown that laminating five sOs films has a great effect in obtaining Zrto JII.
o 7. Immediately after forming the ls film, it is fabricated into a magnetic pole shape, and then the insulating layer that was originally to be laminated on top of it (
It is also possible to form an island (1 Figure 6 #cll-) and then perform the above annealing, but since the amount of conductor balls is small, the demagnetizing field effect is large, and near the ends of the magnetic balls. If the value of Co9/2/0 becomes fractional as t differs depending on the location, the conjugated magnetic domain will become unstable, and the properties as a magnetic ball will become insufficient. Furthermore, if the above-mentioned annealing is performed in a high vacuum or in a water-volume gas atmosphere as is commonly done, similarly good characteristics can be obtained, but in those methods, the magnetic field application mechanism is complicated and expensive. There are restrictions on the annealing method, such as the inability to perform rapid cooling. In addition, there are other drawbacks such as the need for careful handling of the warehouse and the inability to increase throughput, resulting in extremely poor productivity. Although an example of forming the lower magnetic ball is shown here, the upper magnetic ball can be formed in exactly the same manner. In addition, in the explanation so far, the amorphous soft magnetic T4 film is formed on the insulating layer (5 in Figure 1) which is the cured base, but in order to improve the adhesive strength between them, Ti or CrH is interposed. In this case, the manufacturing method of the present invention does not require any essential changes; simply etching the three layers of the adhesive film, the amorphous soft magnetic thin film, and the non-magnetic film together. Bye. Further, in the above embodiments, an example of a magnetic device using an amorphous soft magnetic thin film with high magnetic permeability was shown, but the same applies to a magnetic device using an amorphous soft magnetic thin film with high magnetostriction. As explained above, the formation Km of a magnetic pattern made of an amorphous soft magnetic thin film for a thin 1m1a device is
An amorphous soft magnetic thin film, which is a magnetic pattern material, was formed on a sample substrate, and then a nonmagnetic film was laminated on top of the amorphous soft magnetic thin film. After heat treatment to impart magnetic properties, the amorphous soft magnetic thin film and the non-magnetic film are processed into a predetermined magnetic pattern shape while laminated, thereby forming an amorphous soft magnetic material as a magnetic material pattern. Small, high-performance thin AAA devices using thin films can be easily manufactured in large quantities. Meiki 1so (ro) ka) is an cutout diagram and flat box diagram respectively showing the basic structure of V-do in thin film magnetism, and is the 21st IIl.
(a) (b) (c) (d) (Xun is a cross-sectional diagram showing step by step an example of implementing the present invention in manufacturing a magnetic ball of a thin film magnetic helad. In the figure, 1 is a sample substrate, 2 .3 are the lower and upper magnetic balls, respectively. 4 is the coil conductor, s, rt.
７．８は絶縁層、 ９は電極端子、１１は非晶質軟磁性
薄膜、 化は非磁性体膜であり、１３は）ｒトレジスト
パターンである。7.8 is an insulating layer, 9 is an electrode terminal, 11 is an amorphous soft magnetic thin film, 2 is a nonmagnetic film, and 13) is an r resist pattern.
Claims (1)
いて、試料基板に非晶質軟磁性薄膜を成膜した上に非磁
性体膜を積層成膜し、前記非晶質軟磁性薄膜に所定の磁
気特性を付与する熱処理を行なった後、前記非晶質軟磁
性薄膜と非磁性体膜とを積層したまま所定の磁性体パタ
ーン形状に加工することを４Ｉ像とする非晶質軟磁性薄
膜パターンの製造方法。 １ 非−性体膜か無機絶縁体であることを特徴とする特
許請求の１８１１１項に記載の非晶質軟磁性薄膜パター
ンの製造方法Ｏ １非磁性体膜かＣｒまたはＴｉであることを特徴とする
特許請求の範囲第１項に記載の非晶質軟磁性薄膜パター
ンの製造方法Ｏ[Claims] In manufacturing the magnetic pattern of the 111111m magnetic device, an amorphous soft magnetic thin film is formed on a sample substrate, a nonmagnetic film is laminated on top of the amorphous soft magnetic thin film, and Amorphous soft magnetic material whose 4I image is to process the above-mentioned amorphous soft magnetic thin film and non-magnetic material film into a predetermined magnetic pattern shape while laminating the same after heat treatment to impart predetermined magnetic properties. Method for manufacturing thin film patterns. 1. Method for producing an amorphous soft magnetic thin film pattern according to claim 18111, characterized in that the pattern is a non-magnetic material film or an inorganic insulator. A method for manufacturing an amorphous soft magnetic thin film pattern according to claim 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616482A JPS58153308A (en) | 1982-03-08 | 1982-03-08 | Manufacture of amorphous soft magnetic thin film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616482A JPS58153308A (en) | 1982-03-08 | 1982-03-08 | Manufacture of amorphous soft magnetic thin film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58153308A true JPS58153308A (en) | 1983-09-12 |
Family
ID=12462120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3616482A Pending JPS58153308A (en) | 1982-03-08 | 1982-03-08 | Manufacture of amorphous soft magnetic thin film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153308A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0798751A1 (en) * | 1995-10-13 | 1997-10-01 | Sumitomo Metal Mining Company Limited | Amorphous magnetic substance and magnetic sensor |
| US6308400B1 (en) * | 1999-08-06 | 2001-10-30 | Headway Technologies, Inc. | Method for achieving anti-parallel exchange coupling with one biased layer having low coercivity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54122000A (en) * | 1978-03-13 | 1979-09-21 | Ibm | Amorphous magnetic film |
| JPS5512790A (en) * | 1978-07-14 | 1980-01-29 | Nec Corp | Producing method of cylindrical magnetic domain element |
-
1982
- 1982-03-08 JP JP3616482A patent/JPS58153308A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54122000A (en) * | 1978-03-13 | 1979-09-21 | Ibm | Amorphous magnetic film |
| JPS5512790A (en) * | 1978-07-14 | 1980-01-29 | Nec Corp | Producing method of cylindrical magnetic domain element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0798751A1 (en) * | 1995-10-13 | 1997-10-01 | Sumitomo Metal Mining Company Limited | Amorphous magnetic substance and magnetic sensor |
| EP0798751A4 (en) * | 1995-10-13 | 1998-11-18 | Sumitomo Metal Mining Co | Amorphous magnetic substance and magnetic sensor |
| US6308400B1 (en) * | 1999-08-06 | 2001-10-30 | Headway Technologies, Inc. | Method for achieving anti-parallel exchange coupling with one biased layer having low coercivity |
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