JPS5815322A - Comparison circuit - Google Patents

Comparison circuit

Info

Publication number
JPS5815322A
JPS5815322A JP11356681A JP11356681A JPS5815322A JP S5815322 A JPS5815322 A JP S5815322A JP 11356681 A JP11356681 A JP 11356681A JP 11356681 A JP11356681 A JP 11356681A JP S5815322 A JPS5815322 A JP S5815322A
Authority
JP
Japan
Prior art keywords
transistor
temperature
resistor
diode
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11356681A
Other languages
Japanese (ja)
Inventor
Shuichi Okabe
岡部 州一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11356681A priority Critical patent/JPS5815322A/en
Publication of JPS5815322A publication Critical patent/JPS5815322A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H03K5/082Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding with an adaptive threshold

Abstract

PURPOSE:To simplify the constitution without the need for the provision of a diode for temperature compensation, by using a PNP and an NPN transistor (TR) complementarily for the purpose of temperature compensation. CONSTITUTION:A resistor R6 is provided as an emitter resistor of a TRQ4 and a resistor R7 is provided as an emitter resistor of a TRQ6. The collector of the TR Q4 and Q5 is connected to ground. As for the TRQ4, a PNP TR being complementary to a TRQ1 is used. The way of temperature change characteristic is opposite to each other for the Q1 and Q4 and the effect of temperature is canceled. The emitter output of the Q4 is applied to the base of the PNP TRQ5 via a diode D5, the temperature change is opposite to each other for the D5 and the Q5 and the effect of temperature is canceled. Thus, no temperature diode is required for the output of a buffer Bi, i.e., a positive input terminal of a comparator COM.

Description

【発明の詳細な説明】 本発明は、比較回路に関する。[Detailed description of the invention] The present invention relates to a comparison circuit.

7アクシζす装置における光電変換部の二値化回路(比
較回路)、特に画像の白、黒を判定する回路例を第1図
に示す。信号81は白・黒判定対象t1 入力信号、信号8.は基準信号でめる。比I2器COM
は入力信号靴とトランジスタQ、の工建ツタ出力である
信号8.との比較を行い、その大小関係よ〉白・黒の2
値化信号を得ている。信号81祉バツフアB1ダイオー
ドD1〜D4を介して比較器COMのプラス端に入力し
ている。更豪と、この信号S、は平均値信号を作るべく
ペース抵抗R8を介してトランジスタQ1のベース端に
入力している。トランジスタQ1の工建ツタには抵抗豫
、損、C1、C2が設けられており、充放電回路を形成
している。抵抗損の分圧信号状トランジスタQ2のベー
ス端に入力し、更に諌トランジスタQ2のエイツタ端よ
ジエンツタ抵抗−を介してダイオードD5を駆動する。
FIG. 1 shows an example of a binarization circuit (comparison circuit) of a photoelectric conversion unit in a 7-axis device, particularly a circuit for determining whether an image is white or black. Signal 81 is the input signal for white/black determination target t1, signal 8. is determined by the reference signal. ratio I2 device COM
is the input signal and the output of the transistor Q, which is the signal 8. Compare the two and find out the size relationship〉white and black
A valued signal is obtained. A signal 81 is input to the positive end of the comparator COM via the buffer B1 diodes D1 to D4. Furthermore, this signal S is inputted to the base terminal of the transistor Q1 via a pace resistor R8 to produce an average value signal. The construction of the transistor Q1 is provided with a resistor, a resistor, C1, and C2, forming a charging/discharging circuit. It is inputted to the base end of the resistance loss voltage dividing signal-like transistor Q2, and further drives the diode D5 via the starter end of the resistor transistor Q2 and the starter resistor.

かかる回路構成で注目すべき点紘4個の直列接続のダイ
オードD1〜D4の働きである。温度変化の影蕃は主と
してベース、工建ツタ間に現われるため、図では、信号
S、を得るまでの過程で一4′)の温度変化分が縦続接
続の関係となっている。即ち、Qlのペース・工でツタ
、C2のベース・工建ツタ−ダイオードD5の7ノード
・カソード−φのペース・エミッタとなる。かかる縦続
接続による4個の温度変化成分を回路的に除去する目的
で、この温度変化方向と同一方向で且つその変化量を同
じくすべく4個のダイオードD1〜D4  を直列接続
させている。比較器COMでは、そのfK度変化分がプ
ラス端、!イナス端に入力されたことによって相殺をは
かつている。
What is noteworthy about this circuit configuration is the function of the four series-connected diodes D1 to D4. Since the effects of temperature changes mainly appear between the base and the construction ivy, in the figure, the temperature changes of -4') are connected in cascade in the process up to obtaining the signal S. That is, the pace emitter of Ql, the base of C2, the 7 node cathode of diode D5, and the pace emitter of φ. In order to remove the four temperature change components caused by the cascade connection, four diodes D1 to D4 are connected in series in the same direction as this temperature change direction and with the same amount of change. In the comparator COM, the change in fK degree is the positive end, ! It is offset by being input at the negative end.

かかる従来構成で、温度補償手段は重要な技術要素では
あるが、その実現をはかるために4個のダイオードを使
用すること鉱回路点数の増加iζつながる丸め、決して
好ましいことではない。
In such a conventional configuration, the temperature compensation means is an important technical element, but the use of four diodes to realize it leads to an increase in the number of circuit points, which is not at all preferable.

本発明の目的は、回路点数の減少をはかつてなる比較回
路を提供するものである。
An object of the present invention is to provide a comparison circuit that can reduce the number of circuits.

本発明の要旨は、PNP)ツンジスタとNPN )ツン
ジスタとを温度補償の目的で相補的に使用させた点にあ
る。
The gist of the present invention resides in the complementary use of a PNP (PNP) and NPN (Pn) Tunsister for the purpose of temperature compensation.

第2図は本発明の夾施例図である。本実施例の特徴は、
トランジスタ中の代シにトランジスタ一を設けたこと、
トランジスタ中の代りにトランジスタ9を設けたこと、
トランジスタQ4.Q5の層形式iJ PNP形とじた
こと等ICToる。回路構成に即して臭体的#cTo作
を説明する。
FIG. 2 is a diagram showing a further embodiment of the present invention. The features of this embodiment are as follows:
providing a transistor in place of the transistor;
providing a transistor 9 instead of the middle transistor;
Transistor Q4. Q5's layer format iJ PNP type binding etc. The structure of #cTo will be explained based on the circuit configuration.

トランジスタQ4のエミッタ抵抗として抵抗脇を設け、
皺抵抗R6の他端をアース側ではなくプラス電源に接続
している。トランジスタ9の工ζツタ抵抗として抵抗R
7を設け、該抵抗の他端をアース側ではなくプラス電源
に接続している。トランジスタ中4 、Q5のコレクタ
側はアースに落とされている。
Provide a resistor side as the emitter resistor of transistor Q4,
The other end of the wrinkle resistor R6 is connected to the positive power supply instead of the ground side. Resistor R is used as the resistance of transistor 9.
7 is provided, and the other end of the resistor is connected not to the ground side but to the positive power source. The collector side of transistor 4, Q5, is grounded.

かかる構成によれば抵抗R3の出力にょ))ツンジスメ
Φは導通する。トランジスタQ4のベース端の電位がベ
ース・エイツタ間電圧より低くなり九時トランジスタQ
4は導通し、高くなった時、不導通となる。トランジス
タQ4のエミッタ端は不導通の時高電位となシ、導通の
時、低電位(略アース電位)となる。従って、この電位
がダイオードD5を介してダイオード民を介した入力8
.と共にトランジスタ9のベースに加わシ、皺トッンジ
スタ9のベース・工ζツタ電圧に比して上記電位が大き
いか小さいか化よってトランジスタ9は制御をうけ、導
通或いは不導通となる。トランジスタ価の出力85はバ
ッファBを介して印加してくる入力信5号SRと比較器
COMで比較され、その大小関係に応じた2値化出力が
得られる。
According to such a configuration, the output of the resistor R3 becomes conductive. The potential at the base end of the transistor Q4 becomes lower than the voltage between the base and the transistor Q4.
4 is conductive, and when it becomes high, it becomes non-conductive. The emitter terminal of the transistor Q4 has a high potential when it is non-conducting, and a low potential (approximately ground potential) when it is conducting. Therefore, this potential is passed through the diode D5 to the input 8 through the diode D5.
.. At the same time, depending on whether the potential applied to the base of the transistor 9 is larger or smaller than the base voltage of the wrinkle transistor 9, the transistor 9 is controlled and becomes conductive or non-conductive. The output 85 of the transistor value is compared with the input signal 5 SR applied via the buffer B by the comparator COM, and a binary output corresponding to the magnitude relationship is obtained.

この構成では、トランジスタQ1とトランジスタΦとは
、温度変化成分の現われ方が互いに逆極性とな〉温度の
影響が相殺する。更に、ダイオードD5 (又紘D6 
)とトランジスタりとの間でも、温度変化成分の現われ
方が互いに逆極性とな)温度の影響が相殺する。従って
、バッフ1Bと比較器COMのプラス端子には温度補−
用シイオードは全く不用となった。更には、正しい二値
化検出が可能になった。
In this configuration, the temperature change components of the transistor Q1 and the transistor Φ have opposite polarities and the effects of temperature cancel each other out. Furthermore, diode D5 (Matahiro D6
) and the transistor, the temperature change components appear with opposite polarities, so that the effects of temperature cancel each other out. Therefore, the positive terminal of buffer 1B and comparator COM has temperature compensation.
The diodes were no longer needed at all. Furthermore, accurate binarization detection has become possible.

本発明によれば、簡単な回路構成で温度補償を達成でき
た。
According to the present invention, temperature compensation can be achieved with a simple circuit configuration.

【図面の簡単な説明】[Brief explanation of the drawing]

第1!Elは従来例図、第′2図は本発明の夾坤例図で
ある。 Ql、Q4195・・・トランジスタ、COM・・−比
we。 第1図 啼 第2図 啼
1st! El is a diagram of a conventional example, and FIG. '2 is a diagram of an example of the present invention. Ql, Q4195...transistor, COM...-ratio we. Figure 1 Scream Figure 2 Scream

Claims (1)

【特許請求の範囲】[Claims] 第1の入力信号が印加される第1のトランジスタと、該
第1のトランジスタのエミツタホ讐ワ出力側に設けられ
た充放電回路と、上記j11のトランジスタと異なる層
形式であシ且り上記充放電回路の出力が印加される第2
の)ツンジスタと、該第2のトランジスタと同一層形式
であり且つ、該第2のトランジスタの工(ツタホ四ワ出
力が第1のダイオードを介して及び基準入力が第2のダ
イオードを介してそれぞれ印加されてなる第3のトラン
ジスタと、該IM5のトランジスタの出力と上記第1の
入力信号とを比較するその大小関係に応じた出力を発生
する比較器と、よ構成る比較回路。
a first transistor to which a first input signal is applied; a charging/discharging circuit provided on the emitter output side of the first transistor; the second to which the output of the discharge circuit is applied;
a transistor having the same layer type as the second transistor; A comparator circuit comprising: a third transistor to which a voltage is applied; and a comparator that compares the output of the transistor of the IM5 with the first input signal and generates an output according to the magnitude relationship thereof.
JP11356681A 1981-07-22 1981-07-22 Comparison circuit Pending JPS5815322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11356681A JPS5815322A (en) 1981-07-22 1981-07-22 Comparison circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11356681A JPS5815322A (en) 1981-07-22 1981-07-22 Comparison circuit

Publications (1)

Publication Number Publication Date
JPS5815322A true JPS5815322A (en) 1983-01-28

Family

ID=14615500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11356681A Pending JPS5815322A (en) 1981-07-22 1981-07-22 Comparison circuit

Country Status (1)

Country Link
JP (1) JPS5815322A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356918A (en) * 1976-11-01 1978-05-23 Oki Electric Ind Co Ltd Picture read system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356918A (en) * 1976-11-01 1978-05-23 Oki Electric Ind Co Ltd Picture read system

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