JPS5815265B2 - Automatic shape correction polishing equipment - Google Patents

Automatic shape correction polishing equipment

Info

Publication number
JPS5815265B2
JPS5815265B2 JP55119863A JP11986380A JPS5815265B2 JP S5815265 B2 JPS5815265 B2 JP S5815265B2 JP 55119863 A JP55119863 A JP 55119863A JP 11986380 A JP11986380 A JP 11986380A JP S5815265 B2 JPS5815265 B2 JP S5815265B2
Authority
JP
Japan
Prior art keywords
substrate
polishing
station
measurement
holding stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55119863A
Other languages
Japanese (ja)
Other versions
JPS5748462A (en
Inventor
梶田三夫
大平文和
塚田栄一
渡辺純二
唐木俊郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55119863A priority Critical patent/JPS5815265B2/en
Publication of JPS5748462A publication Critical patent/JPS5748462A/en
Publication of JPS5815265B2 publication Critical patent/JPS5815265B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、半導体基板上に予め形成されたパターンを基
板全面にわたって均一に出現させろために、マーク検出
系の計測データをもとに加工系を制御加工するようにし
た自動形状修正研摩装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION In order to make a pattern formed in advance on a semiconductor substrate appear uniformly over the entire surface of the substrate, the present invention controls the processing system based on the measurement data of the mark detection system. The present invention relates to an automatic shape correction polishing device.

半導体基板では、第1図に示すように、基板1の表面A
に■溝3などによるパターンを形成し、この上に異種材
料を成長付着させて成長層2を形成した後、成長表面C
を基準として基板裏面B側から研摩して成長層2を支持
用基板とし、もとの基板1をパターン状に残すものがあ
る。
In a semiconductor substrate, as shown in FIG.
■ After forming a pattern such as grooves 3 on the substrate and depositing a different material on it to form a growth layer 2, the growth surface C is formed.
There is a method in which the growth layer 2 is used as a supporting substrate by polishing from the back side B of the substrate, and the original substrate 1 is left in a pattern.

この場合、B側からの研摩においては、第2図aに示す
ように、凹状の研摩状態が進行したために中央付近のみ
パターンが出現してしまうことや、第2図すに示すよう
に、傾いて研摩されたために左右で均等にパターンがあ
られれない場合がおこりやすい。
In this case, when polishing from the B side, as shown in Figure 2a, the concave polishing state has progressed so that the pattern appears only near the center, and as shown in Figure 2 The pattern may not be evenly formed on the left and right sides because it has been polished by hand.

実用基板では、研摩工程中で修正加工を行うが、その従
来法においては、研摩中に1時停止して加工面を顕微鏡
で観察し、パターンの出現状態に応じて、例えば第2図
aの場合は凸状態への修正に、第2図すの場合は片方を
より多く研摩するように修正加工していた。
For practical substrates, correction processing is performed during the polishing process, but in the conventional method, polishing is temporarily stopped and the processed surface is observed with a microscope, and depending on the appearance of the pattern, for example, as shown in Figure 2 a, In the case shown in Figure 2, it was corrected to make it convex, and in the case shown in Figure 2, one side was polished more.

したがって、このような方法では、研摩中何度も停止し
て顕微鏡下において人間が判定し、そのたびに修正量を
計算し修正加工するので、時間と手間がかかり生産量が
著しく低いという欠点があった。
Therefore, this method has the drawback that it takes time and effort, and the production rate is extremely low, as the polishing has to be stopped many times during the polishing process, and a person makes judgments under a microscope, and each time calculates the amount of correction and performs the correction process. there were.

本発明は、これらの欠点を解決するために基板上の複数
箇所に配置した検出用マークパターンを光学的に自動検
出し、演算えよって所要研摩面からの深さずれを判定し
、これを研摩ジグ工具の動きに反映させて自動的に所期
形状に修正加工して終了するように、このサイクルを研
摩前の基板カセットから研摩後の収納カセットまで無人
で行わせるようにしたことを特徴とするもので、以下図
面により詳細に説明する。
In order to solve these drawbacks, the present invention optically automatically detects detection mark patterns placed at multiple locations on the substrate, uses calculations to determine the depth deviation from the required polishing surface, and performs polishing based on this. The feature is that this cycle is performed unattended from the substrate cassette before polishing to the storage cassette after polishing, so that the movement of the jig tool is reflected and the process is automatically corrected to the desired shape and finished. This will be explained in detail below with reference to the drawings.

第3図は本発明の一実施例を示すものである。FIG. 3 shows an embodiment of the present invention.

1は被加工基板で、サーキュラテーブル40円周上に加
工ステージョン■、洗浄ステーション■、計測ステーシ
ョン■、基板着脱ステーション■が配置されている。
1 is a substrate to be processed, and a processing station (2), a cleaning station (2), a measurement station (2), and a substrate attachment/detachment station (3) are arranged on the circumference of a circular table 40.

加工ステージョン■において5は研摩用回転工具、6は
工具軸用コラム、洗浄ステーション■において7は洗浄
用スクラバーブラシ、8は注水ノズル、9はN2ガス噴
射ノズル、=測ステーンヨン[nおいて10は撮像用レ
ンズ、11は光源、12は接眼レンズ、基板着脱ステー
ション■において13は真空吸着アーム、14は加工前
基板供給カセット、15は加工後基板収納カセット、1
6は加工基板保持ステージでサーキュラテーブル4上に
固定されている。
In the machining station ■, 5 is a rotary tool for polishing, 6 is a column for the tool axis, in the cleaning station ■, 7 is a scrubber brush for cleaning, 8 is a water injection nozzle, 9 is a N2 gas injection nozzle, = measuring stainless steel [n is 10 1 is an imaging lens, 11 is a light source, 12 is an eyepiece lens, 13 is a vacuum suction arm in the substrate attachment/detachment station (1), 14 is a substrate supply cassette before processing, 15 is a substrate storage cassette after processing, 1
6 is a processed substrate holding stage fixed on the circular table 4.

また、各ステーションは、制御用ライン17により結合
されている。
Further, each station is connected by a control line 17.

これを動作するには、アーム13により基板供給カセッ
ト14より搬出した加工前の基板1を基板保持ステージ
16上に真空吸着保持し、サーキュラテーブル4を回転
して加工ステージョン■において研摩用回転工具5によ
り一定厚さの平面研摩を行い、あらかじめつくられた検
出用パターンを出させる。
To operate this, the unprocessed substrate 1 carried out from the substrate supply cassette 14 by the arm 13 is held on the substrate holding stage 16 by vacuum suction, the circular table 4 is rotated, and the rotary polishing tool is moved to the processing station (2). 5, the surface is polished to a certain thickness to reveal a detection pattern made in advance.

次にサーキュラテーブル4を回転させて洗浄ステーショ
ンICおいて洗浄用スクラバーブラシ1を回転し加工面
に押しつけ、注水ノズル8から水をかげて洗浄し、終了
後ガス噴射ノズル9からのN2ガスにより乾燥させる。
Next, the circular table 4 is rotated and the cleaning scrubber brush 1 is rotated and pressed against the processing surface in the cleaning station IC, water is poured from the water injection nozzle 8 for cleaning, and after completion, it is dried by N2 gas from the gas injection nozzle 9. let

さらにサーキュラテーブル4を回転させて計測ステーシ
ョン■において基板1つ外周近傍および中心付近の複数
のパターンを撮像用レンズ10、光源11、接眼レンズ
12を使って測定し、その結果を演算させて均一パター
ンから基板1各部のズレを判定し、基板1内のより厚く
研摩すべき部分を決定し、基板保持ステージ16の操作
により方向を位置決めし、さらに基板保持ステージ16
を操作して特定方向に傾きを与えて、基板1のより厚く
研摩する方向と一致させた後サーキュラテーブル4を回
転して加工ステージョン■に近づけ、所定の研摩を行う
Furthermore, the circular table 4 is rotated and a plurality of patterns near the outer periphery and center of one substrate are measured using the imaging lens 10, the light source 11, and the eyepiece lens 12 at the measurement station ■, and the results are calculated to form a uniform pattern. The deviation of each part of the substrate 1 is determined from the above, the part of the substrate 1 to be polished thicker is determined, the direction is determined by operating the substrate holding stage 16, and the direction is determined by operating the substrate holding stage 16.
is operated to give an inclination in a specific direction to match the direction in which the substrate 1 is to be polished more thickly.Then, the circular table 4 is rotated to approach the processing station (2), and a predetermined polishing is performed.

これらの動作は装置本体に設けられた制御部によって行
ない、このサイクルをくり返し、計測ステーション■に
おいて基板1全而ではソ均一にパターンが表出されたと
判定されると、基板着脱ステーション■においてアーム
13Cより基板収納カセット15に移され、次の加工前
基板1が再び基板保持ステージ16に装着される。
These operations are performed by a control unit provided in the main body of the device, and this cycle is repeated. When it is determined that the pattern has been uniformly exposed on the entire substrate 1 at the measuring station (2), the arm 13C is moved at the board loading/unloading station (2). The next unprocessed substrate 1 is then transferred to the substrate storage cassette 15 and mounted on the substrate holding stage 16 again.

工程中、各ステーションの動きは制御用ライン17によ
り計測データを基に指令伝達される。
During the process, commands for the movement of each station are transmitted through the control line 17 based on measurement data.

特定形状の研摩方法としては各種考えうるが、第4図は
基板保持ステージ16にその機能をもたせた一実施例の
概念図である。
Although various methods of polishing a specific shape can be considered, FIG. 4 is a conceptual diagram of one embodiment in which the substrate holding stage 16 has this function.

1は被加工基板で、5は研摩用回転工具、161は基板
保持用板、162は傾斜角形成用楔、163は回転軸、
164は固定定盤である。
1 is a substrate to be processed, 5 is a rotating tool for polishing, 161 is a plate for holding the substrate, 162 is a wedge for forming an inclination angle, 163 is a rotating shaft,
164 is a fixed surface plate.

計測ステーション■で傾斜研摩の量と方向が判定されろ
と、基板1のより厚く研摩する箇所を僕162の位置に
基板1に基板保持円板161の相対回転により移動設定
し、必要な傾きを僕162の押しこみにより設定し、サ
ーキュラテーブル4を回転させて研摩用回転工具5によ
り研摩することにより目的を達することができる。
When the amount and direction of the inclined polishing is determined at the measurement station ■, the part of the substrate 1 to be polished more thickly is moved to the position 162 by relative rotation of the substrate holding disk 161 to the substrate 1, and the required inclination is set. The purpose can be achieved by setting by pressing the blade 162, rotating the circular table 4, and polishing with the rotary polishing tool 5.

なお各ステーション■〜■の配置は第3図の実施例に示
したような円形状でなくても、直線上にして往復テーブ
ル上にのせた基板1を研摩することも可能である。
Note that the arrangement of the stations 1 to 2 does not have to be circular as shown in the embodiment of FIG. 3, but can be arranged in a straight line to polish the substrate 1 placed on the reciprocating table.

以上図面に示した実施例にもとすいて説明したように、
一つの研摩装置に力計ステーション、洗浄ステーション
、計測ステーションおよび基板着脱ステーションを配置
することにより加工面に表出したパターンを自動検出し
、加工すべき形状を判定して基板を所用の形状に研摩で
きる装置であるため、加工前の基板を積載したカセット
をセットしておけば自動的に形状研摩して基板全面にわ
たってはg均一なパターンの出現した基板を得ることが
でき、能率、歩留りが向上し、基板コストを低下させる
利点がある。
As explained above with reference to the embodiment shown in the drawings,
By arranging a force meter station, a cleaning station, a measurement station, and a substrate attachment/detachment station in one polishing device, the pattern exposed on the processing surface is automatically detected, the shape to be processed is determined, and the substrate is polished into the desired shape. Because it is a device that can perform processing, if you set a cassette loaded with unprocessed substrates, it will automatically polish the shape and produce a substrate with a uniform pattern over the entire surface of the substrate, improving efficiency and yield. However, it has the advantage of reducing substrate cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は被力計半導体基板の1例を示した断面図、第2
図aybは基板の均一加工に失敗した一例を示した概念
図、第3図は本発明装置の一実施例を示す平面図、第4
図は形状研摩の一実施例を示す断面図である。 図面中、1は被加工基板、2は成長層、3は■溝、4は
サーキュラテーブル、5は研摩用回転工具、6は工具軸
用コラム、7は洗浄用スクラバーブラシ、8は注水ノズ
ル、9はガス噴射ノズル、10は撮像用レンズ、11は
光源、12は接眼レンズ、13はアーム、14は基板供
給カセット、15は基板収納カセット、16は基板保持
ステージ、161は基板保持円板、162は傾斜角形成
用僕、163は回転軸、164は固定定盤、17は制御
用ラインである。
Figure 1 is a sectional view showing an example of a force meter semiconductor substrate, Figure 2
Figure ayb is a conceptual diagram showing an example of failure in uniform processing of a substrate, Figure 3 is a plan view showing an embodiment of the apparatus of the present invention, and Figure 4
The figure is a sectional view showing an example of shape polishing. In the drawing, 1 is a substrate to be processed, 2 is a growth layer, 3 is a groove, 4 is a circular table, 5 is a rotary tool for polishing, 6 is a column for a tool shaft, 7 is a scrubber brush for cleaning, 8 is a water injection nozzle, 9 is a gas injection nozzle, 10 is an imaging lens, 11 is a light source, 12 is an eyepiece, 13 is an arm, 14 is a substrate supply cassette, 15 is a substrate storage cassette, 16 is a substrate holding stage, 161 is a substrate holding disk, Reference numeral 162 indicates a tilt angle forming member, 163 indicates a rotating shaft, 164 indicates a fixed surface plate, and 17 indicates a control line.

Claims (1)

【特許請求の範囲】[Claims] 1 回転テーブルまたは往復テーブルの円周上またはテ
ーブル移動途上に研摩装置が設置された加工ステージョ
ンと洗浄装置が設置された洗浄ステーションと計測用光
学系が設置された計測ステーションと着脱装置が設置さ
れた基板着脱ステーションとを設けるとともに前記テー
ブル上には基板保持ステージを固定し前記各ステーショ
ンを制御用ラインで結合した自動研摩装置において、前
記i測ステーションに、表面にパターンを形成しこの上
に異種材料を成長付着させて成長層を形成したのち成長
表面を基準として裏面側から研摩する個々の半導体基板
に対し該基板上の複数のマークパターンを光学的に検出
する光学系を設けるとともに、前記基板着脱ステーショ
ンには傾斜各形成装置を組み込む一方、前記計測ステー
ションの計測データを演算し研摩面からの深さずれを判
定しこれを前記基板保持ステージの傾斜角形成に指令す
る制都部を設け、前記パターンが基板全面にわたって均
一になるまで計測−研摩−計測のサイクルを繰り返えし
得るよう構成したことを特徴とする自動形状修正研摩装
置。
1 A processing station where a polishing device is installed, a cleaning station where a cleaning device is installed, a measurement station where a measurement optical system is installed, and an attachment/detachment device are installed on the circumference of a rotary table or a reciprocating table or in the middle of table movement. In an automatic polishing apparatus, a substrate holding stage is fixed on the table, and the stations are connected by a control line. An optical system is provided for optically detecting a plurality of mark patterns on each semiconductor substrate, which is polished from the back side using the growth surface as a reference after a growth layer is formed by depositing a material. The attachment/detachment station incorporates each inclination forming device, and is provided with a control section that calculates the measurement data of the measurement station, determines a depth deviation from the polishing surface, and instructs this to the formation of the inclination angle of the substrate holding stage, An automatic shape correction polishing apparatus characterized in that it is configured to repeat a measurement-polishing-measurement cycle until the pattern becomes uniform over the entire surface of the substrate.
JP55119863A 1980-09-01 1980-09-01 Automatic shape correction polishing equipment Expired JPS5815265B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119863A JPS5815265B2 (en) 1980-09-01 1980-09-01 Automatic shape correction polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119863A JPS5815265B2 (en) 1980-09-01 1980-09-01 Automatic shape correction polishing equipment

Publications (2)

Publication Number Publication Date
JPS5748462A JPS5748462A (en) 1982-03-19
JPS5815265B2 true JPS5815265B2 (en) 1983-03-24

Family

ID=14772129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119863A Expired JPS5815265B2 (en) 1980-09-01 1980-09-01 Automatic shape correction polishing equipment

Country Status (1)

Country Link
JP (1) JPS5815265B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3221395A1 (en) * 1982-06-05 1983-12-08 Werner Gerhard 6113 Babenhausen Lang Double-spindle grinding machine
JPS6125760A (en) * 1984-07-09 1986-02-04 Toshiba Corp Grinding method and device
JPS6171955A (en) * 1984-09-12 1986-04-12 Toshiba Corp Grinding method and its device
JPS61226253A (en) * 1985-03-30 1986-10-08 Mitsubishi Metal Corp Automatic parallel-surface grinder
JPH0624879B2 (en) * 1985-08-30 1994-04-06 ブラザー工業株式会社 Printhead manufacturing method
US6161055A (en) * 1993-05-17 2000-12-12 Laser Measurement International Inc. Method of determining tool breakage
IL113829A (en) * 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542738A (en) * 1978-09-20 1980-03-26 Toshiba Corp Abrasive grain processing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542738A (en) * 1978-09-20 1980-03-26 Toshiba Corp Abrasive grain processing device

Also Published As

Publication number Publication date
JPS5748462A (en) 1982-03-19

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