JPS5815261A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5815261A JPS5815261A JP56112351A JP11235181A JPS5815261A JP S5815261 A JPS5815261 A JP S5815261A JP 56112351 A JP56112351 A JP 56112351A JP 11235181 A JP11235181 A JP 11235181A JP S5815261 A JPS5815261 A JP S5815261A
- Authority
- JP
- Japan
- Prior art keywords
- coating material
- pfpa
- hardener
- epoxy
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
本発明は、樹脂封止してなる半導体装置に関し、特に耐
湿性に優れた半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device sealed with resin, and particularly to a semiconductor device with excellent moisture resistance.
半導体素子の表面保護の丸めのアンダーコート材として
、従来エポキシ系コーテイング材又は、シリコーン系コ
ーテイング材が主に用いられてい良、シかしながら、こ
れらＯコーティング材でアンダーコートした半導体装置
は、耐湿性に問題があシ、完全に不嵐晶を減することは
できなかった。これは高温雰囲気中において。Conventionally, epoxy coating materials or silicone coating materials have been mainly used as rounded undercoating materials to protect the surface of semiconductor devices.However, semiconductor devices undercoated with these O coating materials are moisture resistant. I had a sexual problem, and I couldn't completely reduce Akira Fugarashi. This is in a high temperature atmosphere.
シリコーン系コーテイング材はＩｉＯ息及び８１とコー
テイング材の界面における前着性が低下し、界面に水分
が浸入して素子特性を劣化させる丸めと考えられる。It is thought that the silicone-based coating material reduces the adhesion properties at the interface between IiO gas and 81 and the coating material, and causes moisture to enter the interface and deteriorate the device characteristics.
またエポキシ系コーティング、材はコーテイング材の吸
湿によシ素子特性を劣化させる丸めと考えられる。In addition, epoxy coatings and materials are considered to cause deterioration of device characteristics due to moisture absorption of the coating material.
本発明は、高温雰囲気中においても、素子特性の劣化、
又はアル１＝ウム配線の腐食を肪止するために、アンダ
ーコート材として、特定の硬化剤を含有するエポキシ系
コーテイング材を使用することを特徴とし、そｏｌ的は
、耐湿性に優れ九半導体装置を提供するヒとにある。The present invention prevents deterioration of element characteristics even in a high temperature atmosphere.
Alternatively, in order to prevent corrosion of aluminum wiring, an epoxy coating material containing a specific hardening agent is used as an undercoat material. The equipment is provided by the person providing the equipment.
本発明者岬は、耐湿性ＫＷ＆れた半導体装置に関する研
究を進めた結果、アンダーコート材として、４−（多フ
ツ素化アルキル置換ビニルオキシ）無水７タル酸を硬化
剤として含有するエポキシ系コーテイング材を使用する
ことによ）、半導体装置の耐湿性が向上するという新し
い事実を見出し１本発明を完成するに至った。As a result of conducting research on semiconductor devices with moisture resistance KW and the present inventor, Misaki has developed an epoxy coating material containing 4-(polyfluorinated alkyl-substituted vinyloxy) 7-talic anhydride as a curing agent as an undercoat material. The present inventors have discovered a new fact that the moisture resistance of semiconductor devices can be improved by using the above methods, and have completed the present invention.
すなわち本発明を概説すれば１本発明は、樹脂封止して
なる半導体装置において、半導体素子１．硬化剤として
、下記式
で表される、４−（多フツ素化アルキル置換ビニルオキ
シ）無水フタル酸を含有するエポキシ系コーテイング材
でアンダーコートしてなることを特徴とする、半導体装
置に関する。That is, to summarize the present invention, the present invention provides a resin-sealed semiconductor device in which a semiconductor element 1. The present invention relates to a semiconductor device characterized in that it is undercoated with an epoxy coating material containing 4-(polyfluorinated alkyl-substituted vinyloxy) phthalic anhydride represented by the following formula as a curing agent.
本発明で用いるコーテイング材の構成成分は。The constituent components of the coating material used in the present invention are:
エポキシ樹脂、′＃Ｍ記式で表される４−（多フツ素化
アルキル置換ビニルオキシ）無水７タル酸（以下、Ｐν
Ｐムと略記する）、及び有機溶剤であシ、それに、他Ｏ
硬化剤、硬化促進剤及び充てん剤０１種以上を適宜添加
してよい。Epoxy resin, 4-(polyfluorinated alkyl-substituted vinyloxy) heptatalic anhydride (hereinafter referred to as Pν
(abbreviated as P), organic solvent, and other O
A curing agent, a curing accelerator, and one or more fillers may be added as appropriate.
エポキシ樹脂としては、従来Ｏエポキシ系、コーテイン
グ材に使用されているエポキシ樹脂のいずれをも使用す
ることができる。本発明における。硬化剤として前記の
ＰＦＰＡを単独Ｋｌｌ’用する場合、それは、エポキシ
樹脂中Ｏエポキシ基１個に対して、αａＳｆｉ量付近Ｏ
量で使用するのが好ましい。また、Ｐνアムと、そＶ＠
Ｏ硬化剤との配合比は特に限定され表いが、ＰＩＦＦム
Ｏ配合量が多くなるに従って、コーテイング材の耐湿性
は向上する。更に１硬化促進剤を配合する場合には、賦
促進剤Ｏ使用量は、一般的な配合量である。エポキシ樹
脂１００重量部に対して、（Ｌ５〜２重量部程度が好ま
しい。As the epoxy resin, any of conventional O epoxy resins and epoxy resins used for coating materials can be used. In the present invention. When the above-mentioned PFPA is used alone as a curing agent, it has an amount of O near αaSfi per one O epoxy group in the epoxy resin.
Preferably, it is used in amounts. Also, Pνam and soV@
Although the blending ratio with the O curing agent is particularly limited, the moisture resistance of the coating material improves as the amount of PIFF-O blended increases. In addition, when a curing accelerator is added, the amount of accelerator O used is a general amount. (L is preferably about 5 to 2 parts by weight per 100 parts by weight of the epoxy resin.
本麺明で用いるコーテイング材には、必贅に応じて適宜
その他各種の希釈剤、変性剤、顔料などを添加すること
はもちろん可能である。It is of course possible to add various other diluents, modifiers, pigments, etc. as appropriate to the coating material used in Honmenmei according to needs.
以下、実施列及び比較例を挙げて本発明を更に具体的に
説明するが２本発明はこれらに限定されるものではない
。Hereinafter, the present invention will be explained in more detail with reference to practical examples and comparative examples, but the present invention is not limited thereto.
実施例１及び２と比較例１及び２
ビスフェノールムＯシダリシジルエーテル（エポキシ当
量１８９１シ工ル化学社製エビコ−）８１２８）１モル
に対して、硬化剤として。Examples 1 and 2 and Comparative Examples 1 and 2 As a curing agent per 1 mol of bisphenolum O sidalicidyl ether (epoxy equivalent: 1891, Ebico 8128, manufactured by Shikoru Kagaku Co., Ltd.).
７７１”ム単独を１モル（実施例１）、又は該アνアム
と無水メチルナジック酸（以下ＭＭムと略記する）とを
合わせて１モル（実施例２）添加し、更に硬化促進剤と
してベンジルメチルアンンをエポキシ樹脂１００重量部
に対して２重量部添加し、そして、エポキシ樹脂、硬化
剤及び硬化促進剤を合計した量と同量のアセトンを加え
、コーテイング材を得た。1 mol of 771''am alone (Example 1), or 1 mol of the ammonium and methylnadic anhydride (hereinafter abbreviated as MMum) in total (Example 2), and further added as a curing accelerator. 2 parts by weight of benzylmethylamne were added to 100 parts by weight of the epoxy resin, and acetone in an amount equal to the total amount of the epoxy resin, curing agent, and curing accelerator was added to obtain a coating material.
このようにして得られたコーテイング材を１５０℃で１
８時間硬化させた硬化物の吸水率と透湿率を測定した。The coating material thus obtained was heated to 150℃ for 1
The water absorption rate and moisture permeability of the cured product cured for 8 hours were measured.
第１表にそＯ結果を示す。Table 1 shows the results.
併せて比較ガとして、従来のエポキシ系コーテイング材
（比較例１）及びシリコーン系コーチインク材（比較例
２）Ｏ１ｌ水率と透湿率も示す。For comparison, the O1L water rate and moisture permeability of a conventional epoxy coating material (Comparative Example 1) and a silicone coach ink material (Comparative Example 2) are also shown.
９１表
畳 １００時間浸漬後Ｏ重量増加を浸漬餉Ｏ重量で除
した値。91 Omote Tatami The value obtained by dividing the O weight increase after 100 hours of soaking by the O weight of soaked rice.
＋１４） 欄定温［５ｓ℃、相対ａ１度差！◎−第１
表から明らかなように、本発明で使用するコーテイング
材は従来のエポキシ系コーテイング材に比較し、沸騰水
吸水率＃ｉμ〜驕と低くなっており、ｔた従来のシリコ
ーン系コーティング剤と比較して透湿率が謡になってい
る。+14) Column constant temperature [5s℃, relative a1 degree difference! ◎-1st
As is clear from the table, the coating material used in the present invention has a lower boiling water absorption rate of #iμ compared to conventional epoxy coating materials, and has a lower boiling water absorption rate than conventional silicone coating agents. The moisture permeability rate has become a popular song.
したがって、本発明で使用するコーテイング材で半導体
素子をアンダーコートし、封止樹脂で封止した半導体装
置は、従来の半導体装置に比較し、耐浸性が大幅に向上
することは明らかである。Therefore, it is clear that a semiconductor device in which a semiconductor element is undercoated with the coating material used in the present invention and sealed with a sealing resin has significantly improved immersion resistance compared to conventional semiconductor devices.
以上説明したように１本発明によれば、従来Ｏ半導体装
置で問題となっていた耐湿性が大幅に向上することから
、半導体装置の信頼性を大幅に向上させる利点がある。As explained above, according to one aspect of the present invention, the moisture resistance, which has been a problem in conventional O semiconductor devices, is significantly improved, so there is an advantage that the reliability of the semiconductor device is significantly improved.
特許出願人 日本電信電話公社 代理人 中本 宏 ２５５−Patent applicant: Nippon Telegraph and Telephone Corporation Agent Hiroshi Nakamoto 255-
Claims (1)
を、硬化剤として、下記式 で表される。４−（多７ツ素化アルキル置換ビニルオキ
シ）無水フタル酸を含有するエポキシ系コーテイング材
でアンダーコートシてなることを特徴とする。半導体装
置。[Claims] t In a semiconductor device sealed with resin, the semiconductor element is represented by the following formula as a curing agent. It is characterized in that it is undercoated with an epoxy coating material containing 4-(poly7-alkyl-substituted vinyloxy) phthalic anhydride. Semiconductor equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112351A JPS5815261A (en) | 1981-07-20 | 1981-07-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112351A JPS5815261A (en) | 1981-07-20 | 1981-07-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5815261A true JPS5815261A (en) | 1983-01-28 |
Family
ID=14584513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56112351A Pending JPS5815261A (en) | 1981-07-20 | 1981-07-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5815261A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224966A (en) * | 1985-07-19 | 1987-02-02 | Honda Motor Co Ltd | Compensation method for grinding wheel position in grinding machine |
| US5946554A (en) * | 1996-05-28 | 1999-08-31 | Denso Corporation | Method of producing resin-sealed electronic device |
-
1981
- 1981-07-20 JP JP56112351A patent/JPS5815261A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224966A (en) * | 1985-07-19 | 1987-02-02 | Honda Motor Co Ltd | Compensation method for grinding wheel position in grinding machine |
| JPH0244669B2 (en) * | 1985-07-19 | 1990-10-04 | Honda Motor Co Ltd | |
| US5946554A (en) * | 1996-05-28 | 1999-08-31 | Denso Corporation | Method of producing resin-sealed electronic device |
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