JPS5814839A - Projecting exposure device - Google Patents

Projecting exposure device

Info

Publication number
JPS5814839A
JPS5814839A JP56113310A JP11331081A JPS5814839A JP S5814839 A JPS5814839 A JP S5814839A JP 56113310 A JP56113310 A JP 56113310A JP 11331081 A JP11331081 A JP 11331081A JP S5814839 A JPS5814839 A JP S5814839A
Authority
JP
Japan
Prior art keywords
film
exposed
thickness
holes
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56113310A
Other languages
Japanese (ja)
Other versions
JPH0428099B2 (en
Inventor
Hide Miyazaki
宮崎 秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP56113310A priority Critical patent/JPS5814839A/en
Publication of JPS5814839A publication Critical patent/JPS5814839A/en
Publication of JPH0428099B2 publication Critical patent/JPH0428099B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Projection-Type Copiers In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To improve the position deviation in image formation by sandwiching a member to be exposed which is a beltlike film having holes for driving by means of pins with light transmittable flat plates covering the exposure surface mounted to a printing frame and providing a spacing slightly larger than the thickness of the film between the flat plates. CONSTITUTION:In an imaging part, light transmittable flat plates 8, 9 consisting of, for example, glass, larger slightly than the exposure surface are disposed in such a way as to have a spacing slightly larger than the thickness of a film 1 which is a material to be exposed and to be perpendicular to the optical axis. The plates 8, 9 are supported respectively with printing frames 6, 7 and positioning pins 5 coupled to the driving holes of the film 1 are provided to the frame 7. The spacing between the plates 8 and 9 is set at about the thickness of the material to be exposed +100 microns so that the curving of the material to be exposed can be corrected small. Therefore, the deviation in the position of image formation is improved markedly, the obstacles in the design of etching patterns are eliminated and arbitrary patterns are formed with good accuracy.

Description

【発明の詳細な説明】 本発明は投影露光装置の改良に関し、特に帯状フィルム
の露光忙好適の装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a projection exposure apparatus, and more particularly to an apparatus suitable for exposing a film strip.

帯状の金属フィルムにICリードフレームを形成するた
めフォトエツチング手段が良く用いられている。この手
段に用いる露光装置は従来、第1図に概念的に示すよう
に構成されている。即ち、(第 2自) 該装置においては両面にフォトレジストを塗布した金N
1フィルム1を角形環状の焼枠2.3で両面から挾んで
光軸に垂直な平坦面とし、表及び実用の図示しないフォ
トマスクの像をF1点にあるレンズ及びF2点にあるレ
ンズを介してフィルム1上に結像露光するようになって
いる。このような装置に適用するフィルムは通常第2図
に示すようにフィルム10両級に一定間隔で孔4が形成
されており、この孔4は露光時の位置合せ、フィルム駆
動等に用いられる。ところで、このような孔4の形成に
はプレス打抜きで行なうのが一般的である力ζ孔4の単
独の寸法精度及び孔間隔の精度に一定の限度がある。こ
のため孔4の間隔が第2図に示す位置合せピン51〜5
1.54〜56のそれぞれの間隔より大きく形成されて
いる場合、フィルム1は焼枠2及び3の自由な空間にし
わ寄せされ、例えばピン5.と53.54 と56の間
でしわ寄せされると第3図に示すように一方に張り出し
た形状をとることがある。このように平坦度の不良なフ
ィルムに露光すると結像位置にずれを(第 3 頁) 生じ、本来一致する筈の表裏の結像パターンが一致しな
いこととなる。表裏のパターンが一致17ないとエツチ
ングした場合、エツチング断面が垂直にならないのでパ
ターンが微細になるに従い、との欠点は致命的となる。
Photo-etching is often used to form an IC lead frame on a strip-shaped metal film. Conventionally, an exposure apparatus used for this means is constructed as conceptually shown in FIG. That is, (2nd edition) In this device, gold N coated with photoresist on both sides was used.
1 Film 1 is sandwiched from both sides by a square annular printing frame 2.3 to form a flat surface perpendicular to the optical axis, and the image of the front and practical photomask (not shown) is passed through the lens at point F1 and the lens at point F2. The image is formed on the film 1 and exposed. Films used in such devices usually have holes 4 formed at regular intervals in the film 10 as shown in FIG. 2, and these holes 4 are used for positioning during exposure, driving the film, etc. By the way, such holes 4 are generally formed by press punching, and there are certain limits to the dimensional accuracy of the individual holes 4 and the accuracy of the hole spacing. Therefore, the spacing between the holes 4 is adjusted to the positioning pins 51 to 5 shown in FIG.
If the spacing is larger than the respective spacing of 1.54 to 56, the film 1 will be squeezed into the free space of the baking frames 2 and 3, for example, the pin 5. When it is wrinkled between 53, 54 and 56, it may take on a shape that bulges to one side as shown in Figure 3. When a film with such poor flatness is exposed, a shift occurs in the image formation position (page 3), and the image formation patterns on the front and back sides, which should originally match, do not match. If etching is performed unless the patterns on the front and back sides match 17, the etched cross section will not be vertical, and as the pattern becomes finer, this drawback becomes fatal.

このずれの大きさをモデルによシ試算してみると次のよ
うになる1、第4図において、点Aは例えば第2図にお
けるピン5Iの中心、点Bは同じくピン5.の中心とす
る。
If we try to calculate the magnitude of this deviation using a model, we will get the following results: 1 In FIG. 4, point A is the center of pin 5I in FIG. 2, and point B is the center of pin 5I in FIG. be the center of

今、ピン5.及び5.の間隔をLllllとし、これら
のピンに相当する孔40間隔かへLllll+だけ大き
いとき、フィルム1が近似的KAPBのように湾曲する
とする。そしてABの中心を0とすると、2点における
0点からの張出[7距離△■は次式で表わされる。
Now pin 5. and 5. Suppose that the distance between the holes 40 and 40 corresponding to these pins is larger by Lllll+, and that the film 1 curves as approximately KAPB. If the center of AB is set to 0, the overhang [7 distance Δ■ from the 0 point at the two points is expressed by the following formula.

L     L+、Th、’L (△H)2+(−7)2−(−−−2−)i!I。L L+, Th,’L (△H)2+(-7)2-(---2-)i! I.

から   △HΦ △L・−クー そこで0点からrだけ離れたAB上のR点に結像すべき
パターンにより露光すると実際はR1側のパターンUQ
、に結像1F、側のパターンはQtに結像する。第5図
にその部分を拡大して示す。そしてR点を通る垂線が直
線PBと交わる点をQとすると、OR間の距離△hは次
式で表わされる。
From △HΦ △L・-Ku Then, when exposing with the pattern that should be imaged at point R on AB, which is away from point 0 by r, the pattern on the R1 side is actually UQ.
, the pattern on the 1F side is imaged on Qt. FIG. 5 shows an enlarged view of that part. If the point where the perpendicular line passing through point R intersects with the straight line PB is Q, then the distance Δh between the ORs is expressed by the following equation.

r △h−△H・(1−]7) 点Q+及びQ2から直線OBに下ろした垂線の交点をR
,及びRtとすればQ点からの点Q+及びQ、のずれ△
QI%Δq、はそれぞれ点Rから点R1及びR3のずれ
Δr1%△r、に近似で、その値を△rに近似とするこ
とができる。
r △h-△H・(1-]7) The intersection of the perpendicular lines drawn from points Q+ and Q2 to the straight line OB is R
, and Rt, the deviation of points Q+ and Q from point Q is △
QI%Δq is approximated to the deviation Δr1%Δr from point R to points R1 and R3, respectively, and its value can be approximated to Δr.

この△rは第4図の三角形F、0R(F、OR)と三角
形Q+ R+ R(Qt Rt R)の相似から△h1
1r 1> 1 = OF。
This △r is △h1 from the similarity of triangle F, 0R (F, OR) and triangle Q+ R+ R (Qt Rt R) in Figure 4.
1r 1> 1 = OF.

従って、例えばL=40m、ΔL=0.0 O5m、(
第 5 貞) OF、(OF2)=100鰭とすると△h =0.31
6簡と分り、△h1△rけrの値0.5.10、この結
果を第6図に示す。図において横軸は点Rの位置”c”
) D z縦軸はOR,−OR,又は0Rt−ORの値
(μ)を示す。この図からフィルム1がAPBのように
たわむ時、結像の位置ずれは周辺に向うにつれて一旦増
加し、後減少する傾向を認めることができる。
Therefore, for example, L=40m, ΔL=0.0 O5m, (
5th Sada) If OF, (OF2) = 100 fins, △h = 0.31
It was found that the value of Δh1Δr was 0.5.10, and the results are shown in FIG. In the figure, the horizontal axis is the position of point R “c”
) Dz The vertical axis indicates the value (μ) of OR, -OR, or 0Rt-OR. From this figure, it can be seen that when the film 1 is bent like an APB, the positional deviation of the image formation tends to increase once toward the periphery and then decrease.

即ち、上記の試算によれば最大のすわはr=lQmO所
で、約30ミクロンに達する。従ってパターンのライン
幅が30ミクロンのとキ、30ミクロンも結像の位置が
ずれたのではエツチングした時、本来第7図(A)のよ
うにがるべきものが、第7図(B)のような断面となり
正常なエツチング製品を得ることができないことは明ら
かである。しかも、上記試算に用いたピン孔4の形成(
第6 0) 誤差△L=0.005mは少な目の数値であり、実際に
は最大で数十ミクロンになることがある。このため微細
なパターンを形成する位置に制約があシ、パターン設計
上の大きな障害になっていた。
That is, according to the above estimation, the maximum width reaches approximately 30 microns at the location r=lQmO. Therefore, if the line width of the pattern is 30 microns, and the image position is shifted by 30 microns, then when etching is performed, the image that should have appeared as shown in Fig. 7 (A) will instead be shown in Fig. 7 (B). It is clear that a normal etched product cannot be obtained because the cross section is as shown in FIG. Furthermore, the formation of the pin hole 4 used in the above calculation (
6th 0) The error ΔL=0.005m is a small value, and in reality it may be several tens of microns at most. This places restrictions on the positions at which fine patterns can be formed, which poses a major obstacle in pattern design.

本発明は、このような従来の欠点を除去するため、被露
光材の厚さよシ僅かに大きい隙間をもつように配置され
、かつ露光面を全部覆う大きさの平板を取け、その少な
くとも露出側を透光性として平板間に被露光材を挾持し
て光軸に垂直になるように備えて結像部とし、その結像
の位置ずれを極力小さくするようにしたものである。以
下本発明の一実施例を図面により詳細に説明する。
In order to eliminate such conventional drawbacks, the present invention provides a flat plate that is arranged with a gap slightly larger than the thickness of the material to be exposed and that is large enough to cover the entire exposed surface. The exposed material is sandwiched between flat plates whose sides are translucent, and is arranged perpendicular to the optical axis to form an image forming section, and the positional deviation of the image formation is minimized. An embodiment of the present invention will be described in detail below with reference to the drawings.

第8図は本発明投影露光装置における結像部の一実施例
を示す断面図である。図に示すように、この結像部は露
光面よυやや大きい透光性の平板8.9が被露光材とな
るフィルム1の厚さよす僅かに大きい隙間をもつように
、かつ光軸に垂直になるように配置されておシ、この平
板8.9はそれぞれ焼枠6.7にて支持され、焼枠7に
は露光位置決め用ピン5が設けられている。このような
(第 7 自) 構成の結像部を縦来の焼枠の代りに用いれば従来のもの
と全く同様の操作で使用できる。なお、平板8.9は透
明であれば何でも良いが、コスト的にはカラスが最も好
ましい。また、透光性平板の支持方法は特に限定anな
いが、繰り返し使用する間に塵の付着が避けられないの
で着脱可能にすると良い。
FIG. 8 is a sectional view showing an embodiment of the imaging section in the projection exposure apparatus of the present invention. As shown in the figure, this image forming part is arranged so that a transparent flat plate 8.9, which is slightly larger than the exposure surface, has a gap slightly larger than the thickness of the film 1 to be exposed, and is aligned with the optical axis. The flat plates 8.9 are vertically arranged and supported by printing frames 6.7, and the printing frames 7 are provided with exposure positioning pins 5. If an imaging section having such a configuration (No. 7) is used in place of a conventional vertical printing frame, it can be used in exactly the same manner as the conventional one. The flat plates 8.9 may be made of any transparent material, but glass is most preferable in terms of cost. There are no particular restrictions on how to support the light-transmitting flat plate, but it is preferable to make it removable since it is unavoidable that dust will adhere to it during repeated use.

2板の平板8.90間の隙間は少なくとも被露光材1の
厚さより大きくする必要があるが好ましい隙間の大きさ
は被露光材の厚さ+100ミクロン程度でよい。
The gap between the two flat plates 8 and 90 needs to be at least larger than the thickness of the material to be exposed 1, but the preferred size of the gap may be about 100 microns plus the thickness of the material to be exposed.

このようにすると被露光材の湾曲を小さく矯正できるの
で、△Hが小さくなり、従って△11及び△rも小さく
することができる。例えば露光範囲4 Qma+×4 
Q+m、ガラス板の隙間が170ミクロンである結像部
材を焦点圧#HOOggの投影露光装置に取付け、両面
にフ第1・レジストを塗布1−た70μ厚の銅テープに
テ豆ドパターンを連続1.て露光した後、エツチングを
施し、結像位置ずれを測定した結果、表裏像のずれは最
大で10μ、平均5μ以内に納まることが確められた。
In this way, the curvature of the exposed material can be corrected to a small degree, so ΔH becomes small, and therefore Δ11 and Δr can also be made small. For example, exposure range 4 Qma+×4
Q + m, an imaging member with a gap of 170 microns between glass plates was attached to a projection exposure device with a focal pressure of #HOOgg, and a continuous pattern was formed on a 70 μ thick copper tape with resist coated on both sides. 1. After exposure, etching was performed and the image formation position deviation was measured. As a result, it was confirmed that the deviation between the front and back images was 10 μ at the maximum and within 5 μ on average.

なお、本発明によらない場合のずれは最大40μ、平均
20μであった。
Note that the deviation in the case not based on the present invention was 40 μ at the maximum and 20 μ on average.

以上の説明は、主に両面露光の場合について説明したが
、片面露光であっても有効に作用する。
The above explanation has mainly been given for the case of double-sided exposure, but it also works effectively even for single-sided exposure.

即ち、片面露光の場合は表裏の結像位置ずれは無いが、
設計したパターンからずれて露光されエツチングされた
場合不都合を生じることがある。しかし本発明によれば
このような不都合をも解消することができる。この場合
、結像部の少なくとも一方の平板を透光性にすれば良い
。また、他方の平板は単に焼台として用いられるので透
光性、不透光性の何れでもよい。
In other words, in the case of single-sided exposure, there is no deviation in the imaging position between the front and back sides, but
Inconveniences may occur if the pattern is exposed and etched out of alignment with the designed pattern. However, according to the present invention, such inconveniences can also be overcome. In this case, at least one flat plate of the imaging section may be made transparent. Further, since the other flat plate is simply used as a baking table, it may be either translucent or non-transparent.

以上詳細に説明したように、本発明によれば結像の位置
ずれが大幅に改善された結果エツチングパターン設計上
の障害が解消し、任意のパターンが精度良くフォトエツ
チングできる効果がある。
As described in detail above, according to the present invention, the positional deviation of the image formation is greatly improved, and as a result, the obstacles in etching pattern design are eliminated, and any pattern can be photo-etched with high precision.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の投影露光装置を示す概念的構成図、第2
図は同じくその結像部の平面図、第3図(第 9r1) は同じくその断面図、第41!71は第3図における結
像状態の説明図、第5図は第4図の要部拡大図、第6図
は第4図における結像位置ずれ状態の一例を示す説明図
、第7図(A )EJ:結像部1h1ずれのないエツチ
ング状態を示す断面図、(1’l)は結像位置ずれした
エツチング状態を示す断面図、第8図は本発明投影露光
装置における結像部の一例を示す断面図である。 1・・・・・・被露光材(フィルム) 5・・・・・・
露光位置決め用ビン 6.7・・・・・・焼枠 8.9
・・・・・・透光性の平板 特許出願人  住友金属鉱山株式会社 代理人 押 1)。え゛+:H1:i 第6図 ミ 第8vA 256− 第7囚 (A) (B)
Figure 1 is a conceptual configuration diagram showing a conventional projection exposure apparatus;
The figure is a plan view of the imaging section, Figure 3 (9r1) is a cross-sectional view, Figure 41!71 is an explanatory diagram of the imaging state in Figure 3, and Figure 5 is the main part of Figure 4. Enlarged view, FIG. 6 is an explanatory diagram showing an example of the image formation position deviation state in FIG. 4, FIG. 8 is a cross-sectional view showing an etched state in which the image forming position is shifted, and FIG. 8 is a cross-sectional view showing an example of the image forming part in the projection exposure apparatus of the present invention. 1... Material to be exposed (film) 5...
Exposure positioning bin 6.7...Printing frame 8.9
...Translucent flat plate patent applicant Sumitomo Metal Mining Co., Ltd. Agent 1). E゛+:H1:i Figure 6 Mi No. 8vA 256- Prisoner 7 (A) (B)

Claims (1)

【特許請求の範囲】[Claims] 帯状フ、イルムの両縁に一定間隔で形成されたフィルム
駆動用の孔を有する被露元側を、その孔を位置合せ用と
してフィルムの両面よpピンを介して焼枠で挾持し、そ
の露光面を光軸に垂直になるように備えて結像部とする
露光装置において、両焼枠には露光面を全部覆う大きさ
の平板を取利け、その少なくとも露出側を透光性とし、
ピンを介して被露光材を挾持したとき、これら平板間に
フィルムの厚さよシ僅かに大きい隙間をもたせるように
した投影露光装置。
The exposure source side, which has holes for driving the film formed at regular intervals on both edges of the strip film and ilm, is held between both sides of the film by a printing frame using P pins for positioning the holes. In an exposure device in which the exposure surface is arranged perpendicular to the optical axis and serves as an imaging section, a flat plate large enough to cover the entire exposure surface is used for both printing frames, and at least the exposed side of the plate is made translucent. ,
A projection exposure apparatus in which a gap slightly larger than the thickness of the film is created between these flat plates when a material to be exposed is held between pins.
JP56113310A 1981-07-20 1981-07-20 Projecting exposure device Granted JPS5814839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56113310A JPS5814839A (en) 1981-07-20 1981-07-20 Projecting exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56113310A JPS5814839A (en) 1981-07-20 1981-07-20 Projecting exposure device

Publications (2)

Publication Number Publication Date
JPS5814839A true JPS5814839A (en) 1983-01-27
JPH0428099B2 JPH0428099B2 (en) 1992-05-13

Family

ID=14608989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56113310A Granted JPS5814839A (en) 1981-07-20 1981-07-20 Projecting exposure device

Country Status (1)

Country Link
JP (1) JPS5814839A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6490099A (en) * 1987-10-01 1989-04-05 Kaneyuki Suzuki Night soil treating device
JPH0724837B2 (en) * 1984-09-13 1995-03-22 アクセルロッド、バ−トン Waste treatment method and device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4720843U (en) * 1971-03-18 1972-11-09
JPS51942U (en) * 1974-03-30 1976-01-07
JPS513621A (en) * 1974-06-28 1976-01-13 Shigeru Usami Reriifusakuseihoho
JPS5636179U (en) * 1979-08-28 1981-04-07
JPS5667984A (en) * 1979-11-09 1981-06-08 Fujitsu Ltd Method of printing printed board

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636179B2 (en) * 1973-11-09 1981-08-22

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4720843U (en) * 1971-03-18 1972-11-09
JPS51942U (en) * 1974-03-30 1976-01-07
JPS513621A (en) * 1974-06-28 1976-01-13 Shigeru Usami Reriifusakuseihoho
JPS5636179U (en) * 1979-08-28 1981-04-07
JPS5667984A (en) * 1979-11-09 1981-06-08 Fujitsu Ltd Method of printing printed board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724837B2 (en) * 1984-09-13 1995-03-22 アクセルロッド、バ−トン Waste treatment method and device
JPS6490099A (en) * 1987-10-01 1989-04-05 Kaneyuki Suzuki Night soil treating device

Also Published As

Publication number Publication date
JPH0428099B2 (en) 1992-05-13

Similar Documents

Publication Publication Date Title
US6841315B2 (en) Graytone mask and manufacturing method thereof
US20010049064A1 (en) Photo mask for fabricating a thin film transistor liquid crystal display
US7369208B2 (en) Liquid crystal display device
CN110471259B (en) Chip splicing method
WO2007049640A1 (en) Exposure method and exposure apparatus
JP5011973B2 (en) Photo mask
US10739930B2 (en) Mask plate, display substrate, method for manufacturing display substrate, and display device
JP4736277B2 (en) Method for forming colored pixels of color filter and method for forming black matrix of color filter
JPS5814839A (en) Projecting exposure device
US20190278168A1 (en) Functional film layer pattern, display substrate, method for manufacturing display substrate, and display device
JPH0772791B2 (en) Device manufacturing method and mask group used for the same
EP0459737A2 (en) Reticle for a reduced projection exposure apparatus
US8822104B2 (en) Photomask
US9429836B2 (en) Exposure mask, exposure apparatus, and method for manufacturing display substrate
JP2005084492A (en) Photomask for color filter and method for manufacturing color filter using the same
CN110967920A (en) Double photomask and exposure method
JP2912505B2 (en) Method for manufacturing semiconductor device
TWI506354B (en) Photomask substrate, photomask, and pattern transfer method
CN111983889B (en) Mask plate device, display and exposure machine
JP3898772B2 (en) Manufacturing method of semiconductor device
JPS59192248A (en) Reticle
US20230167535A1 (en) Fine metal mask and manufacturing method thereof
JPH0438354Y2 (en)
JP3031728B2 (en) Reticle and exposure equipment
JPH0235445B2 (en)