JPS58147581A - Gold plating method - Google Patents

Gold plating method

Info

Publication number
JPS58147581A
JPS58147581A JP57030024A JP3002482A JPS58147581A JP S58147581 A JPS58147581 A JP S58147581A JP 57030024 A JP57030024 A JP 57030024A JP 3002482 A JP3002482 A JP 3002482A JP S58147581 A JPS58147581 A JP S58147581A
Authority
JP
Japan
Prior art keywords
plating
gold
electricity
gold plating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57030024A
Other languages
Japanese (ja)
Inventor
Takehiko Sato
武彦 佐藤
Kaoru Hashimoto
薫 橋本
Yuji Matsui
祐司 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030024A priority Critical patent/JPS58147581A/en
Publication of JPS58147581A publication Critical patent/JPS58147581A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a thin gold plating film having less pinholes and excellent corrosion resistance and oxidation resistance by interrupting the conduction of electricity for electroplating, applying strike plating of platinum group metals and again applying the electroplating in succession. CONSTITUTION:In a stage of forming a gold plating film on an underlying metallic material by electroplating, the period for forming the gold plating film is divided to plural times by interrupting the conduction of electricity to a plating bath one or twice, and strike plating of platinum group metals such as gold, palladium or the like is applied in said period when the conduction of electricity is interrupted. The plating bath contg. metallic ions to be plated in a concn. lower than the concn. thereof in ordinary plating baths is used for the above- mentioned strike plating, and the uniform plating is accomplished under the conditions of large current density, a short time and low current efficiency, whereby the pinholes of the gold plating film are decreased considerably and corrosion resistance, oxydation resistance, etc. are improved.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はりレー参コネクタ、スイッチなどの電気部品に
おける電気的接点部に適用される比較的薄い金めつき換
の形成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for forming a relatively thin gold-plated refill applied to electrical contact portions of electrical components such as beam connectors and switches.

〔技術の背景〕[Technology background]

リレー、コネクタ、スイッチなどの電気部品における電
気的接点部に通用される金めつき膜は銅あるいはDlv
實銅からなる接点下地金属材の表面を、これら電気部品
の使用される環境雰囲気中に含まれるガスによる腐蝕や
酸化から保−L、 m点部の嵐好な′鑞気的接触を長期
間にわたって保証することを目的として形成される@一
方、その膜厚はできるだけ薄いことが経済性からみて望
ましい・しかし、実用上、薄くできる膜厚KFi隈度が
あ)、この限度より4薄くするにしたがって、めっき膜
に存在するピンホールの径および数が急速に増大し、充
分な耐食性、耐酸化性が得られなくなる。
The gold-plated film commonly used for electrical contacts in electrical components such as relays, connectors, and switches is copper or DLV.
It protects the surface of the contact base metal material made of real copper from corrosion and oxidation caused by gases contained in the environmental atmosphere in which these electrical parts are used, and maintains the storm-like 'galvanic' contact at the point m for a long period of time. On the other hand, it is desirable from an economic point of view that the film thickness be as thin as possible.However, in practice, there is a range in which the film thickness can be made thinner (KFi), so it is necessary to make it 4 thinner than this limit. Therefore, the diameter and number of pinholes present in the plating film rapidly increase, making it impossible to obtain sufficient corrosion resistance and oxidation resistance.

通常、上記の目的で形成される金めっ専属としてはl*
m11!度の厚さに被着され、を九、鋳記電気部分が腐
蝕性の強い雰囲気で使用される場合中。
Usually, gold plating exclusively formed for the above purpose is l*
m11! If the electrical part is used in a corrosive atmosphere, it will be deposited to a thickness of 9 degrees.

とくに高度の信頼度を必要とする用途に使用される場合
にはLli、Itm程度の厚さに被着される場合もある
〇 以上のような状況から、金めり1腰の形成方法に関して
は、得られるめりきilK存在するピンホールが、同じ
膜厚において、できるだけ少い方法を見出すことが改良
の主要課題となっている。
In particular, when used in applications that require a high degree of reliability, it may be applied to a thickness of about Lli or Itm. From the above situation, regarding the method of forming the gold plate, The main challenge for improvement is to find a method in which the number of pinholes present in the resulting plated film is as small as possible at the same film thickness.

〔従来技術と問題点〕[Conventional technology and problems]

従来s’#m程度の比較的薄い金めっさ膜の形成方法と
しては電気めり龜が用いられ、しかもその場合、めっき
浴への通電は所定の膜厚に達するまでの一定時閾、連続
して行われるのが通常であり九〇 これに対し、さらに耐食性のすぐ九九金めりき方法とし
て最近本発明者によりめりき浴への通電を一回あるいは
二回以上中断し、所定の膜厚の金めつき展を形成する時
間を複数期間に分割する方法が提案されている。そして
、この方法によって得られた金めつき膜は、上記の連続
通電によって得られ九四じ膜厚の金めつき膜に比べ、耐
食試験におけるピンホール発生数がいちじるしく少いこ
とが確められている 〔発明の目的〕 本発明は前記!R,に提案し走力法によるよりも耐食性
のすぐれた金めっき膜の形成を可能とする改喪された方
法を提供することを目的とする。
Conventionally, an electroplating machine has been used to form a relatively thin gold plating film of about s'#m, and in that case, electricity is applied to the plating bath for a certain period of time until a predetermined film thickness is reached. Normally, it is carried out continuously.90On the other hand, the present inventor has recently proposed a method for quick gold plating that is even more corrosion resistant, by interrupting the supply of electricity to the plating bath once or twice or more, and then A method has been proposed in which the time for forming a thick gold plating film is divided into multiple periods. It was confirmed that the gold-plated film obtained by this method had significantly fewer pinholes in the corrosion resistance test than the gold-plated film obtained by the above-mentioned continuous energization and had a thickness of 94 mm. [Object of the Invention] The present invention is as described above! The purpose of this invention is to provide an improved method that enables the formation of a gold plating film with better corrosion resistance than that proposed by the running force method.

すなわち、繭記既に提案した方法を考察すると電気めっ
きKより金めりき換を形成する場合において、めっき浴
への通電を中断し、所定膜厚の金めっき膜形成時開を複
数期間に分割する方法(よって、最終的に得られる所定
膜厚の金めつき膜に存在するピンホール数を実質的に減
少させることができるのは、めっき浴への通電を中断し
、めっき膜の形成が停止している期間に通電中断以前に
形成されためっき膜を構成している全結晶粒子の成長の
履歴の影響が打消される丸めと考えられる。
That is, considering the method already proposed by Mayuki, when forming gold plating instead of electroplating K, electricity to the plating bath is interrupted, and the opening when a gold plating film of a predetermined thickness is formed is divided into multiple periods. (Thus, the number of pinholes present in the final gold-plated film of a predetermined thickness can be reduced substantially by interrupting the supply of electricity to the plating bath and stopping the formation of the plating film.) This is considered to be a rounding effect in which the influence of the growth history of all the crystal grains forming the plating film formed before the interruption of current supply is canceled out during this period.

仁のため〈、め−)11浴への通電再開後に形成される
め−>IIIK生ずるピンホールは、必ずしも通電中断
前に形成されためりき膜に存在するピンホールと重なる
ようには位置しない。その結果、このような位置ずれに
よって、めっき層全体を貫通するピンホール数の減少す
る効果が現われる九め連続した一回の通電によって形成
した同じ積厚の金めつき膜よりも実質的にピンホール数
が減少する◎ 上記考察によれば、めっき浴への通電中断期間に前述の
ような結晶粒子の成長の履歴の影響を積極的に打消す手
段を導入すること和よって、ピンホール数をさらに減少
させることが可*@になる。
The pinholes that are formed after the current supply to the bath is restarted are not necessarily located so as to overlap the pinholes that are present in the cut film that were formed before the current supply was interrupted. As a result, this misalignment has the effect of reducing the number of pinholes penetrating the entire plating layer. The number of holes decreases.◎ According to the above considerations, it is possible to reduce the number of pinholes by introducing a means to actively negate the influence of the growth history of crystal grains as described above during the interruption period of current supply to the plating bath. It is possible to further reduce it to *@.

〔発明の構成〕[Structure of the invention]

そこで1本発明者は、上記目的を達成する念めに、金、
パラジウムなどの白金族金属のストライクめっき処理、
すなわち通常のめりき浴より被めり断金属イオンが低濃
度のめつき浴を用い、大きな電流密度で、めっき電流効
率が低いような条件下で均一なめり11に行う処理、を
導入するととによa、*記従来のいづれの方法によるよ
りもいちじるしく耐食性のすぐれた金めつき膜を得た。
Therefore, in order to achieve the above purpose, the inventor of the present invention
Strike plating treatment of platinum group metals such as palladium,
In other words, by using a plating bath with a lower concentration of cutting metal ions than a normal plating bath, and by introducing a process that achieves uniform plating 11 at a high current density and under conditions where the plating current efficiency is low. A gold-plated film with significantly better corrosion resistance than any of the conventional methods was obtained.

すなわち1本発明は電気めりきKよって金めつき膜を形
成する方法において、めっき浴への通電を一回ないし二
回以上中断し、この中断期間に%すでに形成されている
金めつき膜表面に白金族金属のストライクめっき処理を
行うことt特徴とするものである。
That is, 1 the present invention is a method for forming a gold-plated film by electroplating, in which the supply of electricity to the plating bath is interrupted once or twice or more, and during this interruption period, % of the surface of the gold-plated film that has already been formed is removed. It is characterized by performing strike plating treatment of platinum group metal.

以下本発明の5j!施例について説明する。The following is 5j of the present invention! An example will be explained.

(実8111fIll) 金めつき下地金属材:りん青銅板(ODSl?)寸法 
 幅   長さ  厚さ 11、6 smx m Omx 0.6MPH−1sO
,温度 60℃ PH−6,5,m&  1111 上記下地金属材表面にあらかじめ1・l5Ilの厚さの
ニッケルめっきを施したのち、同じく上記金めつき浴中
で電流密度0.lA/dm”4(おいて、0]#mの厚
さの金めりきat−形成したのち、その表面にストライ
クめっき、すなわち1通常のめつき浴よりも被めっき金
属イオン濃度が低いめつき浴を用い、大きな電流密度で
めっきすることKよりめっきの電流効率は低下するもの
の均一なめっきを行うことができるめっき処理を短時闇
行う。
(Actual 8111fIll) Gold plating base metal material: Phosphor bronze plate (ODSl?) Dimensions
Width Length Thickness 11, 6 smx m Omx 0.6MPH-1sO
, Temperature: 60°C PH-6.5, m&1111 After the surface of the base metal material was previously plated with nickel to a thickness of 1·15Il, it was plated with a current density of 0.5I in the same gold plating bath. After forming a gold plating with a thickness of 1A/dm"4 (0)#m, strike plating is applied to the surface, that is, plating with a lower concentration of metal ions to be plated than in a normal plating bath. Although the current efficiency of plating is lower than that of plating at a high current density using a bath, the plating process is performed in the dark for a short time so that uniform plating can be achieved.

すなわち、上記金ストライクめっき浴中でTILR密度
OIA/s1m  においてlO秒関で約0.057w
mの厚さO金ストライクめっき処理を行った。その後さ
らKflQ述の条件で0.4 smの金めっきMt追加
形成し友。
That is, in the gold strike plating bath described above, at a TILR density of OIA/s1m, the rate of 10 seconds is approximately 0.057w.
Gold strike plating treatment was performed to a thickness of m. After that, 0.4 sm of gold plating was further formed under the conditions described above.

(実施例力) 実施例1において、金ストライクめっき浴の(lに次の
パラジウムストライクめっき浴を用い、この浴中で電流
密1度1k OA/ dos” Kkイ’C5秒間で約
0.01mの厚さのパラジウムストライクめっき処8+
を行った0 パラジウムストライクめっき浴 (日本工Vクトロブレーテイング エンジエアーズーII) PH−9,1温度40C (比較例1) 実施例1において金ストライクめつ書を行うことなく連
続して1μmの金めつき膜を形成したO (比較例2) 実施例1においてOSμmの金めつき膜を形成し九のち
、一時めっき浴への通電を中断し、その閣の金ストライ
クめっきを行うことなく引き続1!0.6μmの金めつ
き膜を追加形成し九〇(テスト例1) 以上の試料をlOppmの硫化水嵩を含む窒素5on−
酸素80IIa相対湿度90−・室温の腐食性雰囲気中
に1100時閣放璽したのち、光学顕微鏡により倍率4
00倍で腐蝕点を計数し九〇上記の四例の試料について
の腐蝕点の計数結果は第1表に示すとお夛であったC 第1表 例   5■1当りの腐蝕点の数(個)実施例17 実施例s8 比較例1     46 比較例S       SO (テスト例3) 本発明の金めつき方法によ〕実用的耐蝕性を有する金め
つき膜厚の低減の可能性を検証するために前四例のそれ
ぞれに用い九条件で金めりき膜厚の異る試料を作成し、
テスト例1に示す腐蝕試験を行っ九〇これらの試料から
li m”当りの腐蝕点の数が46士す個の従来の連続
め−)自と同権の腐蝕数の範囲に入る試料のめつき膜の
構成と膜厚は第3表に示すとおりであったO 第2表 めりき膜の構成    金めつき総 kb′1に□lコ 〒g  ジ? 膜厚(、pm)金ス
トライク 金(On)     0.66実施例゛ 金
(0薯) (。、。6) と同じ パラ′ゞ758ト 金(Oj)      0.66実
施1 金(0,11)  、イ、(。0.)と同じ 比較例1m(14))              l
ooと同じ 比較例8金(04)金(o、*)        0.
8と同じ 〔発明の効果〕 試験における腐蝕発生数を基準にして、従来の方法によ
るものよりも8倍ないし16倍に向上できることが明ら
かである。また従来の耐蝕性規格にたいし必要とされて
いる1μmあるいはそれ以上の金めり1膜の厚さ會to
ないし6G参程度まで低減できることが示され経済性の
改善にたいしても本発明が有効であること力監明らかで
ある。
(Example power) In Example 1, the following palladium strike plating bath was used for the gold strike plating bath (l), and in this bath, the current density was 1 degree, 1 kOA/dos"Kk, and about 0.01 m for 5 seconds. Palladium strike plating with a thickness of 8+
0 Palladium strike plating bath (Nippon Kou V Ctroblating Engineering Airs II) PH-9,1 temperature 40C (Comparative example 1) In Example 1, a 1 μm layer was continuously applied without gold strike plating. O with a gold-plated film formed (Comparative Example 2) After forming a gold-plated film of OS μm in Example 1, the current supply to the plating bath was temporarily interrupted, and the plate was removed without gold strike plating. Continuation 1!Additionally form a 0.6 μm gold-plated film and heat the above sample (Test Example 1) with 5 on-nitrogen containing lOppm of sulfide water.
After being exposed to a corrosive atmosphere at room temperature of 80% oxygen and 90% relative humidity, it was examined using an optical microscope at a magnification of 4.
The corrosion points were counted at a magnification of 90. The results of counting the corrosion points for the four samples mentioned above are shown in Table 1. ) Example 17 Example s8 Comparative Example 1 46 Comparative Example S SO (Test Example 3) To verify the possibility of reducing the gold plating film thickness with practical corrosion resistance by the gold plating method of the present invention] For each of the previous four examples, samples with different gold plating film thicknesses were prepared under nine conditions.
The corrosion test shown in Test Example 1 was carried out to determine the number of corrosion points per li m'' of 46 samples from these samples. The composition and film thickness of the plated film were as shown in Table 3. O Table 2 Composition of the plated film Total gold plating kb'1 □l Co 〒g J? Film thickness (, pm) Gold strike Gold (On) 0.66 Example゛ Gold (0 yam) (., .6) Same parameter as ゛758 Gold (Oj) 0.66 Example 1 Gold (0,11) , A, (.0.) Comparative example 1m (14)) l
Comparative Example 8 Same as oo Gold (04) Gold (o, *) 0.
Same as 8 [Effect of the invention] Based on the number of occurrences of corrosion in the test, it is clear that the improvement can be achieved by 8 to 16 times compared to the conventional method. In addition, the thickness of one gold plated film of 1 μm or more, which is required for conventional corrosion resistance standards, is
It has been shown that the present invention can be reduced to the level of 6G, and it is clear that the present invention is effective in improving economic efficiency.

Claims (1)

【特許請求の範囲】[Claims] 電気めっきによって所定厚さの金めつき腹を形成する工
程において、めっき浴への通電を中断して金めつき膜を
形成させる期間を複数に分け、かつ、この通電中断期間
に白金族金属のストライクめっき処jIl管行うことを
特徴とする金めつき方法。
In the process of forming a gold plating layer of a predetermined thickness by electroplating, the period during which the supply of electricity to the plating bath is interrupted to form the gold plating film is divided into multiple periods, and during this period when the supply of electricity is interrupted, the platinum group metal is A gold plating method characterized by carrying out a strike plating process.
JP57030024A 1982-02-26 1982-02-26 Gold plating method Pending JPS58147581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030024A JPS58147581A (en) 1982-02-26 1982-02-26 Gold plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030024A JPS58147581A (en) 1982-02-26 1982-02-26 Gold plating method

Publications (1)

Publication Number Publication Date
JPS58147581A true JPS58147581A (en) 1983-09-02

Family

ID=12292256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030024A Pending JPS58147581A (en) 1982-02-26 1982-02-26 Gold plating method

Country Status (1)

Country Link
JP (1) JPS58147581A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583379A (en) * 1993-09-03 1996-12-10 Ngk Spark Plug Co., Ltd. Outer lead for a semiconductor IC package having individually annealed plated layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583379A (en) * 1993-09-03 1996-12-10 Ngk Spark Plug Co., Ltd. Outer lead for a semiconductor IC package having individually annealed plated layers
US5668060A (en) * 1993-09-03 1997-09-16 Ngk Spark Plug Co., Ltd. Outer lead for a semiconductor IC package and a method of fabricating the same

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