JPS5814744B2 - Metal support for semiconductor devices - Google Patents
Metal support for semiconductor devicesInfo
- Publication number
- JPS5814744B2 JPS5814744B2 JP52044881A JP4488177A JPS5814744B2 JP S5814744 B2 JPS5814744 B2 JP S5814744B2 JP 52044881 A JP52044881 A JP 52044881A JP 4488177 A JP4488177 A JP 4488177A JP S5814744 B2 JPS5814744 B2 JP S5814744B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- metal body
- conductive metal
- portions
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Description
【発明の詳細な説明】
本発明は半導体装置用金属支持体とくに、トランスファ
・モールド封止される半導体装置用電極支持体の改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in metal supports for semiconductor devices, and particularly to electrode supports for semiconductor devices sealed by transfer molding.
従来たとえば電力用半導体装置用の金属支持体として、
熱放散が良くさらに製造が容易な構造が実公昭５１−４
３７２３号にて提案されている。Conventionally, for example, as a metal support for power semiconductor devices,
The structure has good heat dissipation and is easy to manufacture.
It was proposed in No. 3723.
ここで示されている支持体は、素子固着部を池の外部リ
ードよりも厚くし、他の外部リードを適数本連結細条に
て一本化したもので、導電性金属材料の打抜きにより作
成されたものである。The support shown here is made by making the element fixing part thicker than the external lead of the pond, and integrating an appropriate number of other external leads with connecting strips. It was created.
本発明は、このような金属支持体の材料を有効に活用し
製造上経済的効果を高め、半導体装置の取扱いの能率向
上をはかり、半導体装置の組立、製造に好適な半導体装
置用金属支持体を提供するものである。The present invention effectively utilizes the material of such a metal support, increases the economical effect in manufacturing, improves the efficiency of handling of semiconductor devices, and provides a metal support for semiconductor devices suitable for assembling and manufacturing semiconductor devices. It provides:
以下本発明を図面とともに詳細に説明する。The present invention will be described in detail below with reference to the drawings.
第１，２図は本発明にかかる後述する導電性金属体を用
いて作成された半導体装置を示し、１は金属電極支持体
、２はトランジスタ、ダイオード等の作り込まれた半導
体素子３が固着された素子固着部で、この部分は池のリ
ード部よりも厚くし放熱性を良好なものとしている。Figures 1 and 2 show a semiconductor device manufactured using a conductive metal body according to the present invention, which will be described later, in which 1 is a metal electrode support, 2 is a semiconductor element 3 such as a transistor or a diode, etc., fixed thereto. This part is made thicker than the lead part of the pond to improve heat dissipation.
４は固着部２から延出された外部リードでたとえばトラ
ンジスタのコレクタリードである。Reference numeral 4 denotes an external lead extending from the fixed portion 2, and is, for example, a collector lead of a transistor.
５，６は外部リード４に近接して平行に配置された外部
リードで４と同じ厚さを有し半導体素子２と金属細線７
，８で接続されておりたとえばトランジスタのベース・
エミツタリードを構成している。5 and 6 are external leads arranged close to and parallel to the external lead 4, and have the same thickness as the external lead 4, and connect the semiconductor element 2 and the thin metal wire 7.
, 8, for example, the base of a transistor.
It constitutes Emitsuta Reed.
これら外部リード５，６は固着部２、外部リード４と一
体に後述のごとく打抜き形成されたものである。These external leads 5 and 6 are integrally formed with the fixed portion 2 and the external lead 4 by stamping as described below.
９は半導体素子３の周囲を包囲した封止用樹脂でトラン
スファ・モールドされたものである。Reference numeral 9 denotes a semiconductor element 3 which is transfer-molded with a sealing resin surrounding the semiconductor element 3.
１０は電極支持体１をシャージ等にネジ止めするための
取付孔である。10 is a mounting hole for screwing the electrode support 1 to a chassis or the like.
さて、つぎに電極支持体１の作成ならびに第１，２図に
示す半導体装置の組立を説明する。Next, the preparation of the electrode support 1 and the assembly of the semiconductor device shown in FIGS. 1 and 2 will be explained.
第３図は電極支持体１を形成する状態を示すもので、一
つの打抜きパターンを示す。FIG. 3 shows the state in which the electrode support 1 is formed, and shows one punching pattern.
第３図において１１は多数の電極支持体１を打抜き形成
するための帯状の導電性金属体で、固着部２の厚さを有
する帯状の材料の両縁部及び中央部を圧延装置によって
薄肉にしたもので、この金属体１１の長手方向の中心線
０に対して一方および池方の側にそれぞれ複数の素子固
着部、取付孔、外部リードの一端部が形成されている。In FIG. 3, reference numeral 11 denotes a strip-shaped conductive metal body for punching and forming a large number of electrode supports 1. Both edges and the center of a strip-shaped material having the thickness of the fixed part 2 are thinned by a rolling machine. A plurality of element fixing portions, mounting holes, and one end portion of the external lead are formed on one side and the side of the metal body 11 with respect to the center line 0 in the longitudinal direction.
第４図において第１図と対応するものには類似番号を付
す。Components in FIG. 4 that correspond to those in FIG. 1 are given similar numbers.
すなわち、この帯状の導電性金属体１１の長手方向の中
心線０に対して一方の外側部に素子固着部２、取付孔１
０、固着部２から延出されたリード部４の一部４ａ，４
ａに近接したリード部の一端部５ａ，６ａがプレス打抜
きにより形成されている。That is, an element fixing portion 2 and a mounting hole 1 are provided on one outer side of the strip-shaped conductive metal body 11 with respect to the center line 0 in the longitudinal direction.
0, parts 4a, 4 of the lead part 4 extending from the fixed part 2
One end portions 5a and 6a of the lead portion close to a are formed by press punching.
さらに中心線０に対して池方の外側部に、上記一方の外
側部と対称形状の素子固着部２、取付孔１０′、リード
部の一部４ａ、一端部５ａ，６ａが形成されている。Further, on the outer side of the pond with respect to the center line 0, an element fixing part 2 having a shape symmetrical to the one outer part, a mounting hole 10', a part 4a of the lead part, and one end parts 5a and 6a are formed. .
そしてこれらのものは第３図から明らかなどとく多数個
連らなって形成されており、さらに中心線０付近は単な
る平板状となっており、後のプレス打抜きにより一点鎖
線のごとく打抜かれ第１図の金属支持体１が形成される
。It is clear from Fig. 3 that a large number of these are formed in a row, and furthermore, the area near the center line 0 is simply a flat plate. The metal support 1 shown is formed.
すなわち、平板状の部分は、４ａ，４ａ’につながるリ
ード部４ ， ４’一端部５ ａ ２ ５ ａ’ １
６ ａ ｔ ６ ａ’につながるリード部５ ， ５’
， ６ ． ６’が、半導体素子の固着、トランスフ
ァ・モールド工程のち打抜き形成されるものである。That is, the flat plate-shaped portion is the lead portion 4 connected to 4a, 4a', one end portion 5a25a'1
Lead parts 5 and 5' connected to 6 a t 6 a'
, 6. 6' is formed by punching after the fixation of the semiconductor element and the transfer molding process.
この平板状部分において、第３図に示す２０の部分（斜
線部）が打抜き除去され、中心線０の両側においてそれ
ぞれ第１図の金属支持体が形成されることになる。In this flat plate-shaped portion, portions 20 (shaded areas) shown in FIG. 3 are punched out and removed, and the metal supports shown in FIG. 1 are formed on both sides of the center line 0, respectively.
さらに、第３図の構造において注目すべきことは、素子
固着部２側においてこれと組み合されるリード部４，５
．６およびその一部４ａ，５ａ，６ａと、素子固着部２
′側においてこれと組み合されるリード部４’ ， ５
’ ， ６’およびその一部４ａ′，５ａ’，６ａ’を
、中央部すなわち平板状部分にて交互に配置している点
である。Furthermore, what should be noted in the structure of FIG. 3 is that the lead parts 4 and 5 combined with the element fixing part 2 are
．． 6 and its parts 4a, 5a, 6a, and the element fixing part 2
Lead parts 4' and 5 combined with this on the ' side
', 6' and parts 4a', 5a', 6a' thereof are arranged alternately in the central part, that is, in the flat plate-like part.
すなわち、リード部は左から５’，５，４’，４，６’
，６の順で等間隔に配置されており、素子固着部２と２
′は中心線０の垂直方向に対して少しずれた配置構成と
なっている。In other words, the lead parts are 5', 5, 4', 4, 6' from the left.
, 6 are arranged at equal intervals in the order of element fixing parts 2 and 2.
' has a configuration slightly shifted from the vertical direction of the center line 0.
このように電極支持体の作成に対し、中心線の両側の支
持体の各リード部を交互に配置することにより、導電性
金属体１１からの材料取りの効率が極めて高くなり、導
電性金属体１１の幅も小さくすることができ、材料の使
用効率化、コストダウンに大きく寄与する。By alternately arranging the lead portions of the supports on both sides of the center line to create the electrode support, the efficiency of material removal from the conductive metal body 11 is extremely high, and the conductive metal body 11 can also be made smaller, which greatly contributes to more efficient use of materials and cost reduction.
特にこの構造はリード部の間隔を大きくとることのでき
る大型の半導体装置に有効である。This structure is particularly effective for large-sized semiconductor devices in which the lead portions can be spaced widely.
なお、第４図は第３図の■−■′線の構造断面図である
。Incidentally, FIG. 4 is a structural sectional view taken along the line ■-■' in FIG. 3.
次に第１図に示す半導体装置の組立方法を説明する。Next, a method of assembling the semiconductor device shown in FIG. 1 will be explained.
まず、第３図に示すごとき導電性金属体１１を打抜いた
のち、メッキ処理を施し、素子固着部２，２′に半導体
素子３を固着する。First, a conductive metal body 11 as shown in FIG. 3 is punched out and then plated to fix the semiconductor element 3 to the element fixing portions 2, 2'.
そして、素子とリード部の端部５ａ，５ａ’，６ａ，６
ａ’に金属細線を接続し、樹脂によるトランスファ・モ
ールドを施す。And the ends 5a, 5a', 6a, 6 of the element and the lead part
Connect a thin metal wire to a' and transfer mold with resin.
しかるのち、平板状部分の不要部分２０を打抜き、さら
にリード部４，５，６に半田メッキを施し、第３図の連
結部分２１，２１’を切断分離して第１図の半導体装置
が完成する。Thereafter, the unnecessary portion 20 of the flat plate portion is punched out, the lead portions 4, 5, and 6 are further plated with solder, and the connecting portions 21 and 21' shown in FIG. 3 are cut and separated to complete the semiconductor device shown in FIG. 1. do.
以上のように、本発明は半導体装置用電極支持体作成用
の材料の効率活用をはかることができるとともに、製造
に際しては圧延した後プレスするだけでよいため極めて
多量に製造するのに適し、取扱いも能率的となり、半導
体装置の組立に大きく寄与するものである。As described above, the present invention makes it possible to efficiently utilize materials for producing electrode supports for semiconductor devices, and since it is only necessary to press after rolling, the present invention is suitable for production in extremely large quantities and is easy to handle. It also becomes more efficient and greatly contributes to the assembly of semiconductor devices.
第１図は本発明にかかる支持体を用いて組立てられた半
導体装置の平面図、第２図は第１図の■−■’線断面図
、第３図は本発明の一実施例にかかる帯状の導電性金属
体の平面図、第４図は第３図のＩＶ−ＩＶ線断面図であ
る。
１・・・・・・半導体装置、２，２′・・・・・・素子
固着部、４，４’ ， ５ ， ５’ ， ６ ， ６
’・・・・・リード部、２０・・・・・・打抜き部。FIG. 1 is a plan view of a semiconductor device assembled using a support according to the present invention, FIG. 2 is a sectional view taken along the line ■-■' of FIG. 1, and FIG. 3 is a plan view of a semiconductor device assembled using a support according to the present invention. A plan view of the strip-shaped conductive metal body, and FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3. 1... Semiconductor device, 2, 2'... Element fixing part, 4, 4', 5, 5', 6, 6
'... Lead part, 20... Punching part.
Claims (1)
素子の固着部および上記素子固着部より延出される第１
のリード部と、同じく上記金属体を打抜いて形成される
とともに上記素子固着部に近接して平行に導出される第
２のリード部とを有し、上記帯状の導電性金属体の長手
方向の中心線に対して両側にそれぞれ上記固着部を形成
し、これらそれぞれの固着部より延出される第１のリー
ド部を、上記導電性金属体の中央部において交互に配置
するとともに上記固着部を、上記第１および上記第２の
リード部の末端部より厚《かつ上記第２のリード部の上
記固着部の近接部と同じ厚さに形成したことを特徴とす
る半導体装置用金属支持体。1 A semi-circle formed by punching out a band-shaped conductive metal body. A fixed portion of the conductor element and a first portion extending from the above-mentioned element fixed portion.
and a second lead part which is also formed by punching out the metal body and is led out in parallel to the element fixing part, and which extends in the longitudinal direction of the strip-shaped conductive metal body. The fixed portions are formed on both sides with respect to the center line of the conductive metal body, and the first lead portions extending from the fixed portions are arranged alternately in the center of the conductive metal body, and the fixed portions are arranged on both sides of the conductive metal body. A metal support for a semiconductor device, characterized in that the metal support is formed to have a thickness greater than the end portions of the first and second lead portions and the same thickness as a portion of the second lead portion adjacent to the fixing portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52044881A JPS5814744B2 (en) | 1977-04-18 | 1977-04-18 | Metal support for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52044881A JPS5814744B2 (en) | 1977-04-18 | 1977-04-18 | Metal support for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53129585A JPS53129585A (en) | 1978-11-11 |
| JPS5814744B2 true JPS5814744B2 (en) | 1983-03-22 |
Family
ID=12703822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52044881A Expired JPS5814744B2 (en) | 1977-04-18 | 1977-04-18 | Metal support for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814744B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5040984A (en) * | 1973-08-14 | 1975-04-15 | ||
| JPS5132365U (en) * | 1974-08-31 | 1976-03-09 | ||
| JPS5143723U (en) * | 1974-09-27 | 1976-03-31 |
-
1977
- 1977-04-18 JP JP52044881A patent/JPS5814744B2/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5040984A (en) * | 1973-08-14 | 1975-04-15 | ||
| JPS5132365U (en) * | 1974-08-31 | 1976-03-09 | ||
| JPS5143723U (en) * | 1974-09-27 | 1976-03-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53129585A (en) | 1978-11-11 |
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