JPS58147234A - Ｍｏｓ　ｆｅｔスイツチ回路 - Google Patents

Ｍｏｓ　ｆｅｔスイツチ回路

Info

Publication number
JPS58147234A
JPS58147234A JP2996682A JP2996682A JPS58147234A JP S58147234 A JPS58147234 A JP S58147234A JP 2996682 A JP2996682 A JP 2996682A JP 2996682 A JP2996682 A JP 2996682A JP S58147234 A JPS58147234 A JP S58147234A
Authority
JP
Japan
Prior art keywords
mos
bias
switch
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2996682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315378B2 (enrdf_load_stackoverflow
Inventor
Eiji Masuda
英司 増田
Kenji Matsuo
松尾　研二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2996682A priority Critical patent/JPS58147234A/ja
Priority to DE8383101780T priority patent/DE3360366D1/de
Priority to EP83101780A priority patent/EP0088291B1/en
Priority to US06/469,971 priority patent/US4518880A/en
Publication of JPS58147234A publication Critical patent/JPS58147234A/ja
Publication of JPH0315378B2 publication Critical patent/JPH0315378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
JP2996682A 1982-02-26 1982-02-26 Ｍｏｓ　ｆｅｔスイツチ回路 Granted JPS58147234A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2996682A JPS58147234A (ja) 1982-02-26 1982-02-26 Ｍｏｓ　ｆｅｔスイツチ回路
DE8383101780T DE3360366D1 (en) 1982-02-26 1983-02-23 Mos switch circuit
EP83101780A EP0088291B1 (en) 1982-02-26 1983-02-23 Mos switch circuit
US06/469,971 US4518880A (en) 1982-02-26 1983-02-25 MOS Switch circuit with consistent low on resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2996682A JPS58147234A (ja) 1982-02-26 1982-02-26 Ｍｏｓ　ｆｅｔスイツチ回路

Publications (2)

Publication Number Publication Date
JPS58147234A true JPS58147234A (ja) 1983-09-02
JPH0315378B2 JPH0315378B2 (enrdf_load_stackoverflow) 1991-02-28

Family

ID=12290707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2996682A Granted JPS58147234A (ja) 1982-02-26 1982-02-26 Ｍｏｓ　ｆｅｔスイツチ回路

Country Status (1)

Country Link
JP (1) JPS58147234A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132748U (ja) * 1991-05-30 1992-12-09 関西日本電気株式会社 出力バツフア回路
JP2013062014A (ja) * 2011-08-24 2013-04-04 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132748U (ja) * 1991-05-30 1992-12-09 関西日本電気株式会社 出力バツフア回路
JP2013062014A (ja) * 2011-08-24 2013-04-04 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0315378B2 (enrdf_load_stackoverflow) 1991-02-28

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