JPS58147220A - Manufacture of crystal oscillator - Google Patents
Manufacture of crystal oscillatorInfo
- Publication number
- JPS58147220A JPS58147220A JP2888382A JP2888382A JPS58147220A JP S58147220 A JPS58147220 A JP S58147220A JP 2888382 A JP2888382 A JP 2888382A JP 2888382 A JP2888382 A JP 2888382A JP S58147220 A JPS58147220 A JP S58147220A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- metal
- metal film
- film
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 239000010931 gold Substances 0.000 description 22
- 239000011651 chromium Substances 0.000 description 18
- 239000010936 titanium Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はフォトリソグラフィー技術を利用して水晶をエ
ツチングする際の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing method for etching crystal using photolithography technology.
近年、水晶をフォトリソグラフィー技術を用いてエツチ
ングにより所望の形状を得ようとする製造方法が多用さ
れている。特に基準発振源としての水晶振動子に用いる
水晶振動片（以下水晶片と略記する）においては薄型−
小型化に伴いますますそのニーズが増大してきている。In recent years, a manufacturing method in which a desired shape is obtained by etching a crystal using photolithography technology has been frequently used. In particular, crystal resonator pieces (hereinafter abbreviated as crystal pieces) used in crystal resonators as reference oscillation sources are thin.
The need for such devices is increasing as miniaturization progresses.
前記水晶片の製造法において、従来行われて来た方法は
概略第１図に示すような工程を用いた方法であった。In the method for producing the crystal blank, the conventional method has been a method using steps as schematically shown in FIG.
第１図（イ）〜（へ）は従来行われて来た水晶片の製造
法の概略の工程を示す断面図である。FIGS. 1A to 1F are cross-sectional views schematically showing the steps of a conventional method for manufacturing a crystal blank.
第１図において、１は水晶ウェハー、２はクロム（以下
Ｃｒと記載）の薄膜で、水晶と金（以下Ａｕと記載）の
密着力を増す役割を持ち、３はＡｕの薄膜で、水晶をエ
ツチングする際のレジストとなり、４はフォトレジスト
で、ノくターニング後エツチングすることによりＣｒと
Ａｕを所定の形状に成形するためのものである。In Figure 1, 1 is a crystal wafer, 2 is a thin film of chromium (hereinafter referred to as Cr), which has the role of increasing the adhesion between the crystal and gold (hereinafter referred to as Au), and 3 is a thin film of Au, which protects the crystal. The photoresist 4 serves as a resist for etching, and is used to form Cr and Au into a predetermined shape by etching after turning.
第１図（イ）〜（へ）に於て、（イ）は所定の形状寸法
に仕上げられた水晶ウエノ・−１の洗浄等を終えた状態
を示す断面図である。In FIGS. 1A to 1F, FIG. 1A is a cross-sectional view showing the state of the crystal Ueno-1 finished in a predetermined shape and size after cleaning and the like.
（ロ）は第１工程で、水晶ウエノ・−１の両面にＣ「膜
２とＡｕ膜６を各々略２００Ｘ及び２・・２０００Ｘく
らい蒸着やスパッタリング等により膜付した状態を示す
断面図である。(B) is a cross-sectional view showing a state in which a C film 2 and an Au film 6 of approximately 200X and 2...2000X were deposited on both sides of the crystal Ueno-1 by vapor deposition, sputtering, etc. in the first step. .
（ハ）は第２工程で、Ａｕ膜６の上下（両面）に、フォ
トレジスト４（ポジタイプ、ネガタイプどちらでも良い
）をスピンナー等で塗布した状態を示す断面図である。(C) is a cross-sectional view showing a state in which photoresist 4 (either positive type or negative type) is coated on the top and bottom (both sides) of the Au film 6 using a spinner or the like in the second step.
（ニ）は第３工程で、フォトリソグラフィー技術により
フォトレジスト４を所望の形状にノ（ターニングすなわ
ち無光現像した後の状態を示す断面（ホ）は第４工程で
、（ニ）で得られたフォトレジスト４のパターンに従っ
てＡｕ膜６及びＣｒ膜２を各々エツチングすることによ
って、Ｃｒ−Ａｕ膜２．６を所望の形状に形成した後の
状態を示す断面図である。(d) is the third step, and the cross section (e) showing the state after turning the photoresist 4 into a desired shape by photolithography technology (that is, non-photodevelopment) is the fourth step, and the cross section (e) showing the state after turning the photoresist 4 into the desired shape is the fourth step. 6 is a cross-sectional view showing a state after a Cr--Au film 2.6 is formed into a desired shape by etching the Au film 6 and the Cr film 2 according to the pattern of the photoresist 4. FIG.
（へ）は第５工程で、（ホ）で得られたフオトレジス）
４、Ａｕ膜３及びＣｒ膜２のパターンに従って水晶ウェ
ハー１にエツチングを施し、水晶ウェハー１に所望の形
状を形成した状態を示す断面図である。(F) is the fifth step, and the photoresist obtained in (E))
4 is a sectional view showing a state in which the crystal wafer 1 is etched according to the patterns of the Au film 3 and the Cr film 2 to form a desired shape on the crystal wafer 1.
以上の工程により水晶片を製造するが、第１図（へ）で
示した水晶の巾寸法Ｗのバラツキを小さく押えることに
よって特性のバラツキを小さく押えられるのでこの巾寸
法Ｗのバラツキが小なることが量産上非常に大切なこと
であるが、第１図に示した従来技術では以下の様な理由
からＷ寸法のバラツキが大となってしまう。A crystal piece is manufactured by the above process, and by suppressing the variation in the width W of the crystal shown in FIG. This is very important for mass production, but in the conventional technology shown in FIG. 1, the W dimension varies greatly for the following reasons.
即ち第１図（ホ）に示す工程５に於て、Ｃｒ膜２、Ａｕ
膜６をエツチングする際、ＣｒとＡｕの標準単極電位が
異るために、エツチング条件例えばエツチング液の温度
、濃度、時間などを一定に保持できればアンダーエツチ
ング量は一定に保たれるが、前記条件を一定に保つこと
は非常に難かしく、従ってアンダーエツチング量にバラ
ツキが生じることとなる。That is, in step 5 shown in FIG. 1(e), the Cr film 2, the Au
When etching the film 6, since the standard monopolar potentials of Cr and Au are different, if the etching conditions such as the temperature, concentration, and time of the etching solution can be kept constant, the amount of underetching can be kept constant. It is very difficult to keep the conditions constant, which results in variations in the amount of underetching.
第２図はＡｕ膜６、Ｃｒ膜２の従来工程により形成され
るアンダーエツチングの状態を示す部分拡大断面図であ
る。FIG. 2 is a partially enlarged sectional view showing the state of under-etching of the Au film 6 and Cr film 2 formed by the conventional process.
従来工程ではフォトレジスト４をレジストとしてＡｕ膜
６をエツチングするが、この時フォトレジスト４に対し
てＡｕ膜乙に多少アンダーエツチングが起こる。次にＣ
ｒ膜２をエツチングする時は、フォトレジスト４はレジ
ストの役を成さずＡｕ膜６がレジストの役を成す。この
ためＡｕに対して更にアンダーエツチングが起り、第２
図に示す、状態とな・る。ここにおいてエツチング条件
を全く一定にできれば、アンダーエツチング量を一定に
でき補正を行って加工することができるが、条件を一定
にコント四−ルすることは難かしいためアンダーエツチ
ング量にバラツキが生じてしまう。In the conventional process, the Au film 6 is etched using the photoresist 4 as a resist, but at this time, some underetching occurs in the Au film 6 with respect to the photoresist 4. Next, C
When etching the r film 2, the photoresist 4 does not act as a resist, but the Au film 6 acts as a resist. As a result, further underetching occurs on the Au, resulting in a second
The state shown in the figure is reached. If the etching conditions can be kept completely constant, the amount of underetching can be made constant and correction can be performed during processing, but since it is difficult to control the conditions to a constant level, variations in the amount of underetching may occur. Put it away.
更に悪いことには、フォトレジストのパターニング精度
は比較的良いが、それに対するＡｕのアンダーエツチン
グ量にバラツキが生じ、そのバラツキにプラスされてＣ
ｒのアンダーエツチング量にバラツキが生じるため、二
重にバラツキ要因が重なり更にコントロールが難かしく
なり、アンダーエツチング量のバラツキが大きくなって
しまう。To make matters worse, although the patterning accuracy of the photoresist is relatively good, there are variations in the amount of underetching of Au, and in addition to this variation, C
Since variations occur in the amount of underetching of r, the factors of variation overlap, making control even more difficult, and the variation in the amount of underetching becomes large.
この様にアンダーエツチング量が大巾にバラツクと、エ
ツチングにより加工される水晶の巾寸法ＷはＣｒ膜２の
巾寸法で決るからエツチング後の水晶の巾寸法Ｗも大巾
にバラライてしまい、その結果水漏振動子の特性値が変
ったり、その特性値にバラツキがでたり、後工程で周波
数調整に時間がかかったり、歩留りを下げたりする要因
になっていた。If the amount of underetching varies widely in this way, and the width W of the crystal processed by etching is determined by the width of the Cr film 2, the width W of the crystal after etching will also vary widely, and the width W of the crystal processed by etching will also vary widely. As a result, the characteristic values of the water leakage vibrator may change or vary, causing frequency adjustment to take time in post-processing and reducing yield.
本発明はこの様な欠点を克服しようとするもので、精度
の良い水晶片を得ることにより特性の揃った水晶振動子
を安価に供給することを目的とするものであり、その要
旨は、水晶面上に水晶と密着力の強い第１金属膜を形成
し、第１金属膜上にフォトレジストを塗布し、フォトレ
ジストに必要形状をバターニング後第１金属膜をエツチ
ングし、第１金属膜上の７オトレジストと水晶面上に第
１及び第２金属膜と選択エツチング可能な第３金属膜を
形成し、フォトレジストとフォトレジスト上の第３金属
膜をリフトオンし、第１金属膜と第３金属膜上に耐エツ
チング液性を有する第２金属膜を形成し、Ｊ３金属膜を
エツチングして第２金属展と共にリフトオンし、残った
第１及び第２金属膜により水晶をエツチングすることを
特徴とする。The present invention aims to overcome these drawbacks, and aims to provide a crystal resonator with uniform characteristics at a low cost by obtaining a crystal piece with high precision. A first metal film with strong adhesion to the crystal is formed on the surface, a photoresist is applied on the first metal film, and the photoresist is patterned into the required shape, and then the first metal film is etched. A third metal film that can be selectively etched with the first and second metal films is formed on the photoresist and the crystal surface, the photoresist and the third metal film on the photoresist are lifted on, and the first metal film and the third metal film are formed on the photoresist. A second metal film having etching liquid resistance is formed on the J3 metal film, the J3 metal film is etched and lifted on together with the second metal film, and the remaining first and second metal films are used to etch the crystal. Features.
本発明の製造法を第３図により説明する。The manufacturing method of the present invention will be explained with reference to FIG.
第３図（イ）〜（す）は本発明の一実施例による水晶片
の製造法を示す図であり、１は水晶、５は第１金属膜で
、例えばＣｒのように水晶との密着力の強い金属膜であ
り、６はフォトレジストであり、７は第３金属膜で、第
１及び第２金属膜との選択エツチングが可能でしかも水
晶との密着力の強い金属膜で、例えばチタン（以下Ｔｉ
と記載）のようなものであり、８は第２金属膜で、水晶
エンチング液に対し２て耐液性のあるもので、例えばＡ
ｕのようなものである。FIGS. 3(A) to 3(S) are diagrams showing a method of manufacturing a crystal piece according to an embodiment of the present invention, in which 1 is a crystal, and 5 is a first metal film, for example, Cr, which is in close contact with the crystal. 6 is a photoresist, and 7 is a third metal film, which is a metal film that can be selectively etched with the first and second metal films and has strong adhesion to crystal, for example. Titanium (hereinafter referred to as Ti)
8 is a second metal film, which is more resistant to crystal etching liquid than 2, for example A.
It's like u.
以下、５はＣｒ、７はＴｉ、８はＡｕとして第３図を説
明する。Hereinafter, FIG. 3 will be explained assuming that 5 is Cr, 7 is Ti, and 8 is Au.
図において、（イ）は従来と同様所定の形状寸法に仕上
げられた水晶１の断面図である。In the figure, (A) is a cross-sectional view of a crystal 1 finished into a predetermined shape and size as in the conventional case.
（ロ）は第１工程を示す断面図で、水晶１０両面にＣｒ
膜５が厚さ１００〜５００Ｘをスパッタリング、又は蒸
着等の手段で膜付される。(b) is a cross-sectional view showing the first step, in which Cr is applied to both sides of the crystal 10.
The film 5 is deposited to a thickness of 100 to 500× by sputtering, vapor deposition, or the like.
（ハ）は第２工程を示す断面図で、Ｃｒ膜５の形成され
た水晶１０両面にフォトレジスト６が１〜３μｍスピン
ナー等でコーティングされる。(C) is a sectional view showing the second step, in which both surfaces of the crystal 10 on which the Cr film 5 is formed are coated with a photoresist 6 of 1 to 3 μm using a spinner or the like.
（ニ）は第３工程を示す断面図であり、フォトレジスト
乙に必要形状がパターニング、すなわち露光現像が施こ
され、Ｃｒ膜５がエツチングされた状態である。(D) is a sectional view showing the third step, in which the photoresist B has been patterned into the required shape, that is, exposed and developed, and the Cr film 5 has been etched.
（ホ）は第４工程を示す断面図であり、（ニ）で得られ
たＣｒ膜５上の７オトレジスト６と水晶１の両面にＴｉ
膜７を１００〜１０００λスパンタリング又は蒸着等の
手段で膜付けした状態を示している。(E) is a cross-sectional view showing the fourth step, in which Ti is applied to both sides of the 7-photoresist 6 on the Cr film 5 obtained in (D) and the crystal 1.
A state in which a film 7 of 100 to 1000 λ is formed by sputtering, vapor deposition, or the like is shown.
（へ）は第５工程を示す断面図であり、（ホ）で得られ
た状態より、Ｃｒ膜５上のフォトレジスト６をアセトン
又はレジスト剥離液に浸し超音波洗浄することによりフ
ォトレジスト６中に液をしみ込ませ、フォトレジスト６
とその上にあるＴｉ膜７とを除去するのである。この工
程を第１リフトオフ工程と言う。(F) is a cross-sectional view showing the fifth step, and from the state obtained in (E), the photoresist 6 on the Cr film 5 is immersed in acetone or a resist stripping solution and subjected to ultrasonic cleaning. soak the liquid into the photoresist 6.
and the Ti film 7 thereon are removed. This process is called the first lift-off process.
（ト）は第６エ程を示す断面図で、（へ）で得られたＣ
ｒ膜５とＴ１膜７上の両面にＡｕ膜８を５００〜１００
０λ蒸着又はスパッタリング等で膜付する。(G) is a cross-sectional view showing the 6th step, and the C obtained in (F)
Au film 8 with a thickness of 500 to 100 on both sides of the r film 5 and the T1 film 7.
The film is attached by 0λ vapor deposition or sputtering.
（チ）は第７エ程を示す断面図で、（ト）で得られた状
態において、Ｔｉの選択エツチング液（Ｔｉの場合は５
％ＨＦ（沸酸）水溶液）に浸すことにより、Ｔｉ膜７と
Ｔｉ膜７の上のＡｕ膜８を除去した状態を示している。(H) is a cross-sectional view showing the seventh etching step, and in the state obtained in (G), a selective etching solution for Ti (in the case of Ti, 5
% HF (hydrofluoric acid) aqueous solution), the Ti film 7 and the Au film 8 on the Ti film 7 are removed.
これは第２のりフトホフ工程である。This is the second Norifthof step.
（す）は第８工程を示す断面図で、（チ）で得られたＣ
ｒ Ａ ｕ膜５．８をレジストとして水晶のエツチ
ング液例えばＨＦ（沸酸）とＮＨ４Ｆ（佛化アンモニウ
ム）の混合液に浸すことにより水晶をエツチング除去し
た状態を示している。この様にして水晶片の形状が決定
するのであり、引き続き電極形成をし、管にマウント・
封止することによって水晶振動子として発振可能な状態
になるのである。(S) is a cross-sectional view showing the 8th step, and C obtained in (H)
This shows the state in which the crystal is etched away by immersing the r Au film 5.8 as a resist in a crystal etching solution, such as a mixed solution of HF (hydrochloric acid) and NH4F (ammonium chloride). In this way, the shape of the crystal piece is determined, and then electrodes are formed and mounted on the tube.
By sealing it, it becomes capable of oscillating as a crystal resonator.
以上の如く本発明の工程を採用することにより、水晶片
の形状を決定するレジストがＣｒ膜の巾により決定する
がこのＣｒ膜は比較的精度の良いフォトレジストにより
決定し、しかもバラツキ要因が従来に較べて減るため、
水晶エツチング用のレジスト膜のバラツキを極小に押え
ることができた。As described above, by adopting the process of the present invention, the resist that determines the shape of the crystal piece is determined by the width of the Cr film, and this Cr film is determined by a relatively accurate photoresist, and the variation factor is Because it decreases compared to
We were able to minimize variations in the resist film used for crystal etching.
尚、本実施例においては第３金属膜としてＴｉを使用し
たが、Ａ１等第１及び第２金属膜との選択エツチングが
でき且水晶との密着度の強いものであれば良い。例えば
ＡＩの場合その選択エツチング液として、Ｈ，ＰＯ４（
リン酸）：ＨＮＯ。In this embodiment, Ti is used as the third metal film, but any material may be used as long as it can be etched selectively with the first and second metal films, such as A1, and has strong adhesion to the crystal. For example, in the case of AI, the selective etching solution is H, PO4 (
phosphoric acid): HNO.
（硝酸）：Ｈ，Ｃ０（ＪＨ（酢酸）：Ｈ２Ｏ（水）を１
６：１：２：１の割合の溶液を使用することＫより可能
−である。(Nitric acid): H, C0 (JH (acetic acid): H2O (water) 1
It is possible to use a solution with a ratio of 6:1:2:1.
以上の如く本発明を実施することにより、形状寸法精度
が著しく向上し、精度の良い水晶片を得ることができた
ため、水晶振動子としての特性値の良いものが得られ、
又周波数の調整も極めて少なくて済み歩留りも向上した
。従って、性能の良い、しかも安価の水晶振動子を提供
することができた。By implementing the present invention as described above, the shape and size accuracy has been significantly improved, and a highly accurate crystal piece can be obtained, so that a crystal resonator with good characteristic values can be obtained.
In addition, the frequency adjustment is extremely small and the yield is improved. Therefore, it was possible to provide a crystal resonator with good performance and low cost.
尚、本発明は水晶振動子としての水晶片への適用につい
て説明したが、水晶片に限らず水晶の他の加工にも適用
可能である。Although the present invention has been described as being applied to a crystal blank as a crystal resonator, it is not limited to the crystal blank and can be applied to other processing of crystal.
第１図（イ）〜（へ）は従来技術による水晶片の製造工
程を示す断面図、第２図はサイドエツチング状態を示す
部分断面図、第３図（イ）〜（す）は本発明による水晶
片の製造工程を示す断面図である。
１・・・・・・水晶、５・・・・・・第１金属膜（例え
ばｅｒ）、６・・・・・・フォトレジスト、
７・・・・・・第３金属膜（例えばＴｉ）、８・・・・
・・第２金属膜（例えばＡｕ）、（ロ）Figures 1 (A) to (F) are cross-sectional views showing the manufacturing process of a crystal piece according to the prior art, Figure 2 is a partial cross-sectional view showing the side-etched state, and Figures 3 (A) to (F) are the present invention. FIG. 1...Crystal, 5...First metal film (e.g. er), 6...Photoresist, 7...Third metal film (e.g. Ti) , 8...
...Second metal film (e.g. Au), (b)
Claims (1)
１の金属膜と耐エツチング液性の強い第２の金属膜の少
なくとも２層の金属膜をレジストとして、水晶をエツチ
ングする製造法において、水晶面に前記第１金属膜を形
成する工程と、前記第１金属膜上に“フォトレジストを
塗布する工程と、前記フォトレジストに必要形状をバタ
ーニングし、その後前記第１金属膜をエツチングする工
程と、前記第１金属膜上のフォトレジストと水晶面上に
前記第１及び第２金属膜と選択エツチング可能な第３の
金属膜を形成する工程と、前記第１金属膜上の７オトレ
ジストを剥離することによって前記フォトレジスト上の
第３の金属膜を除去する第１リフトオフ工程と、前記第
１金属膜と前記第３金属膜との上に前記第２金属膜を形
成する工程と、前記第３金属膜を選択エツチングするこ
とにより前記第３金属膜と前記第３金属膜上の第２金属
膜を除去する第２リフトオフ工程と、残った前記第１及
び第２の２層の金属膜をレジストとして水晶をエツチン
グする工程、とを有することを特徴とする水晶振動子の
製造法。In a manufacturing method in which the crystal is etched using photolithography technology, the crystal surface is etched using at least two metal films as a resist: a first metal film that has strong adhesion to the crystal, and a second metal film that has strong etching resistance. forming the first metal film, applying a photoresist on the first metal film, patterning the photoresist into a required shape, and then etching the first metal film. , forming a third metal film that can be selectively etched with the first and second metal films on the photoresist on the first metal film and on the crystal surface; and peeling off the photoresist on the first metal film. a first lift-off step of removing the third metal film on the photoresist by forming the second metal film on the first metal film and the third metal film; a second lift-off step in which the third metal film and the second metal film on the third metal film are removed by selectively etching the third metal film; and the remaining two metal films of the first and second layers are removed. A method for manufacturing a crystal resonator, comprising the step of etching crystal as a resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2888382A JPS58147220A (en) | 1982-02-26 | 1982-02-26 | Manufacture of crystal oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2888382A JPS58147220A (en) | 1982-02-26 | 1982-02-26 | Manufacture of crystal oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58147220A true JPS58147220A (en) | 1983-09-02 |
Family
ID=12260793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2888382A Pending JPS58147220A (en) | 1982-02-26 | 1982-02-26 | Manufacture of crystal oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147220A (en) |
-
1982
- 1982-02-26 JP JP2888382A patent/JPS58147220A/en active Pending
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