JPS58147033A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS58147033A
JPS58147033A JP2876582A JP2876582A JPS58147033A JP S58147033 A JPS58147033 A JP S58147033A JP 2876582 A JP2876582 A JP 2876582A JP 2876582 A JP2876582 A JP 2876582A JP S58147033 A JPS58147033 A JP S58147033A
Authority
JP
Japan
Prior art keywords
resist
layer
gas
pattern
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2876582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234453B2 (enrdf_load_stackoverflow
Inventor
Hideo Akitani
秋谷　秀夫
Kazuo Hirata
一雄 平田
Yutaka Sakakibara
裕 榊原
Toyoki Kitayama
北山　豊樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2876582A priority Critical patent/JPS58147033A/ja
Publication of JPS58147033A publication Critical patent/JPS58147033A/ja
Publication of JPH0234453B2 publication Critical patent/JPH0234453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2876582A 1982-02-26 1982-02-26 パタ−ン形成方法 Granted JPS58147033A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2876582A JPS58147033A (ja) 1982-02-26 1982-02-26 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2876582A JPS58147033A (ja) 1982-02-26 1982-02-26 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58147033A true JPS58147033A (ja) 1983-09-01
JPH0234453B2 JPH0234453B2 (enrdf_load_stackoverflow) 1990-08-03

Family

ID=12257495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2876582A Granted JPS58147033A (ja) 1982-02-26 1982-02-26 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58147033A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263435A (ja) * 1984-06-11 1985-12-26 Rohm Co Ltd パタ−ニング方法
JPH01200628A (ja) * 1988-02-05 1989-08-11 Toshiba Corp ドライエッチング方法
JPH047829A (ja) * 1990-04-26 1992-01-13 Sony Corp 多層レジスト層のエッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin
JPS56140351A (en) * 1980-04-04 1981-11-02 Fujitsu Ltd Formation of pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin
JPS56140351A (en) * 1980-04-04 1981-11-02 Fujitsu Ltd Formation of pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263435A (ja) * 1984-06-11 1985-12-26 Rohm Co Ltd パタ−ニング方法
JPH01200628A (ja) * 1988-02-05 1989-08-11 Toshiba Corp ドライエッチング方法
JPH047829A (ja) * 1990-04-26 1992-01-13 Sony Corp 多層レジスト層のエッチング方法

Also Published As

Publication number Publication date
JPH0234453B2 (enrdf_load_stackoverflow) 1990-08-03

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