JPS58145137A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS58145137A
JPS58145137A JP57027592A JP2759282A JPS58145137A JP S58145137 A JPS58145137 A JP S58145137A JP 57027592 A JP57027592 A JP 57027592A JP 2759282 A JP2759282 A JP 2759282A JP S58145137 A JPS58145137 A JP S58145137A
Authority
JP
Japan
Prior art keywords
oxide film
silicon nitride
semiconductor device
film
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57027592A
Other languages
Japanese (ja)
Other versions
JPH0414500B2 (en
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57027592A priority Critical patent/JPS58145137A/en
Publication of JPS58145137A publication Critical patent/JPS58145137A/en
Publication of JPH0414500B2 publication Critical patent/JPH0414500B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Abstract

PURPOSE:To enable to avoid accumulation of hydrogen in a groundwork oxide film, and to enable to reduce density at the hole catching center of the semiconductor device by a method wherein an opening part to form the path for hydrogen is provided to a surface protective film consisting of silicon nitride film. CONSTITUTION:Diffusion layers 2, 3 are formed in the surface of an Si wafer 1, a gate oxide film 4 and a gate electrode 5 are formed between the layers thereof, and a field oxide film 6 is formed at the circumference to constitute the MOS semiconductor device. The silicon nitride film 8 is opened to the outside against the groundwork oxide film through the side 9, an aluminum electrode 10 and a surface metal film 11, and hydrogen (H) occluded in the oxide film is discharged to the outside through the opening parts thereof.

Description

【発明の詳細な説明】 本発明は半導体装置のシリコン窒化膜による保＠Ｈφ構
造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a protective @Hφ structure using a silicon nitride film for a semiconductor device.

−】− 従来、半導体装置のシリコン窒化膜にょる保瞳膜形成構
造としては、シリコン窒化膜が半導体装置の全面にすき
間なく被検されることが、外部からの汚染物質の侵入を
防止するために行なわれていた。−】− Conventionally, in the case of a pupil formation structure using a silicon nitride film for a semiconductor device, the silicon nitride film is inspected without any gaps over the entire surface of the semiconductor device to prevent contaminants from entering from the outside. It was carried out in

しかし、上記従来技術によると、シリコン窒化膜が下地
酸化膜中に水素を蓄積し、正孔捕獲中心を形成するとい
う欠点のあることが、Ｈ，Ｂ、Ｆαｉｒ　　ａｎｄ　　
Ｒ，Ｃ，ｓｕｎ、’Ｔｈｒｅｓｈｏｌｄ−Ｖｏｔａｇｅ
　　工ｎ５ｔａｂｉｌｉｔｙ　　ｉｎ　　ＭＯ８ＦＩ！
ｉＴ’８　Ｄｕｅｔｏ　　Ｃｈａｎｎｅｌ　　Ｈｏｔ−
Ｈｏ１ｅ　　Ｂｔｎｉｓｓｉｏｎ”、ＩＥＥｌｌｉ　　
Ｔｒａｎｓ、ｏｎ　　ＥＤ、２）（，１，８３（１９８
１）に記載されている如く分かってきた。However, according to the above-mentioned conventional technology, the silicon nitride film accumulates hydrogen in the base oxide film and forms a hole trapping center, which is a drawback of H, B, Fαir and
R,C,sun,'Threshold-Votage
Engineering n5tability in MO8FI!
iT'8 Dueto Channel Hot-
Ho1e Btnission”, IEElli
Trans, on ED, 2) (, 1, 83 (198
It was discovered as described in 1).

そこで、本発明は水素蓄積のない、月っ汚染の影響を受
は難いシリコン窒化膜被膜処理′ｆ：施した半導体装置
を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor device subjected to a silicon nitride film coating process 'f' which does not accumulate hydrogen and is not easily affected by moon pollution.

上記目的を達成するだめの本発明の基本的な構成は、半
導体表面形成されたシリコン窒化膜に吸蔵水素放出四を
設けることを特徴とする。The basic structure of the present invention for achieving the above object is characterized in that a hydrogen absorbing layer 4 is provided in a silicon nitride film formed on a semiconductor surface.

以下、実施例により本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail with reference to Examples.

２− 第１図は本発明による半導体装置の１例を示す断面図で
ある。ＳＺラウェ−・１の表面には拡散層２．３が形成
され、その間にゲート酸化膜４．ゲート電極５と、周辺
にフィールド酸化膜６．が形成され、ＭＯ８型半導体装
置を構成している。７はアルミニウム電極配線であ＃）
８がシリコン窒化膜による表面保膿被膜である。シリコ
ン窒化膜８は下地酸化膜に対して、側面９．アルミニウ
ＪＡ電極１１１　、表面金属膜１１全通して外部に開口
されており、酸化膜に吸蔵された水素（Ｈ）はこれらの
開口部全通して外部へ放出される。2- FIG. 1 is a sectional view showing an example of a semiconductor device according to the present invention. A diffusion layer 2.3 is formed on the surface of the SZ raw material 1, and a gate oxide film 4.3 is formed in between. Gate electrode 5 and surrounding field oxide film 6. is formed to constitute an MO8 type semiconductor device. 7 is aluminum electrode wiring)
8 is a surface purulent coating made of silicon nitride film. The silicon nitride film 8 is formed on the side surface 9. with respect to the base oxide film. The aluminum JA electrode 111 and the surface metal film 11 are all opened to the outside, and hydrogen (H) occluded in the oxide film is released to the outside through all of these openings.

この様にシリコン窒化膜による表面保膿＃膜に水素の通
路となる開口部を設けることにより、保瞳性能を大きく
劣化させることなく下地酸化膜中への水素の蓄積を避け
ることができ、正孔捕獲中心の密度が減少でき、半導体
装置の結性変動をさけることができる効果がある。In this way, by providing openings for hydrogen to pass through the surface purulent retention film made of silicon nitride film, it is possible to avoid hydrogen accumulation in the underlying oxide film without significantly deteriorating the pupil retention performance. This has the effect of reducing the density of hole trapping centers and avoiding fluctuations in the bonding properties of the semiconductor device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明によるシリコン窒化膜表面保獲処理をし
た半導体装置の一例を示す断面図である。 ３− ト・・シリコン基板　２，３・・・拡散層４・・・ゲー
ト酸化膜　５・・・ゲート′Ｆｌ！極６・・・フィール
ド酸化膜 ７・・・配線電極　　　８・・・シリコン紫化鞍９・・
・側面開口部　　ｌｉｌ・・・電・極間口部１１・−・
金属膜開口部 以　　　１− 出願人　株式会社諏訪精工舎 代理人　弁理士最　上　　務 ４−FIG. 1 is a sectional view showing an example of a semiconductor device subjected to a silicon nitride film surface retention treatment according to the present invention. 3- Silicon substrate 2, 3... Diffusion layer 4... Gate oxide film 5... Gate 'Fl! Pole 6...Field oxide film 7...Wiring electrode 8...Silicon purple saddle 9...
・Side opening lil...electrode/electrode opening 11...
From the metal membrane opening 1- Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Tsutomu Mogami 4-

Claims (1)

【特許請求の範囲】 １４　　半導体表面には酸化膜上にシリコン窒化膜が形
成されるか、あるいは酸化膜上に電極配線がなされ、該
電極配線上にもシリコン窒化膜が形成される等してシリ
コン窒化膜による表面保瞳被膜が形成される場合に、シ
リコン窒化膜の一部が開口されて下地酸化＃または電極
配線が霧出されて成る事を特徴とする半導体装＃。 ２、一部が開口されたシリコン窒化膜を保瞳被験とする
半導体装置において、前記開口部全金属膜でへって成る
油を特徴とする特許請求の範囲給１項記載の半導体装置
。[Claims] 14. On the semiconductor surface, a silicon nitride film is formed on an oxide film, or an electrode wiring is formed on the oxide film, and a silicon nitride film is also formed on the electrode wiring, etc. 1. A semiconductor device characterized in that when a surface pupil-protecting coating is formed using a silicon nitride film, a part of the silicon nitride film is opened and base oxide or electrode wiring is exposed. 2. The semiconductor device according to claim 1, in which a partially opened silicon nitride film is used as a pupil-keeping test, and the semiconductor device is characterized in that the opening is entirely made of metal film.
JP57027592A 1982-02-23 1982-02-23 Semiconductor device Granted JPS58145137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57027592A JPS58145137A (en) 1982-02-23 1982-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57027592A JPS58145137A (en) 1982-02-23 1982-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS58145137A true JPS58145137A (en) 1983-08-29
JPH0414500B2 JPH0414500B2 (en) 1992-03-13

Family

ID=12225210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57027592A Granted JPS58145137A (en) 1982-02-23 1982-02-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS58145137A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01204433A (en) * 1988-02-09 1989-08-17 Seiko Instr & Electron Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01204433A (en) * 1988-02-09 1989-08-17 Seiko Instr & Electron Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0414500B2 (en) 1992-03-13

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