JPS58141538A - 集積回路装置 - Google Patents

集積回路装置

Info

Publication number
JPS58141538A
JPS58141538A JP57025402A JP2540282A JPS58141538A JP S58141538 A JPS58141538 A JP S58141538A JP 57025402 A JP57025402 A JP 57025402A JP 2540282 A JP2540282 A JP 2540282A JP S58141538 A JPS58141538 A JP S58141538A
Authority
JP
Japan
Prior art keywords
film
silicon
silicon oxide
oxide film
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57025402A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236390B2 (enExample
Inventor
Kuniyuki Hamano
浜野　邦幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57025402A priority Critical patent/JPS58141538A/ja
Publication of JPS58141538A publication Critical patent/JPS58141538A/ja
Publication of JPS6236390B2 publication Critical patent/JPS6236390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP57025402A 1982-02-18 1982-02-18 集積回路装置 Granted JPS58141538A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57025402A JPS58141538A (ja) 1982-02-18 1982-02-18 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57025402A JPS58141538A (ja) 1982-02-18 1982-02-18 集積回路装置

Publications (2)

Publication Number Publication Date
JPS58141538A true JPS58141538A (ja) 1983-08-22
JPS6236390B2 JPS6236390B2 (enExample) 1987-08-06

Family

ID=12164906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57025402A Granted JPS58141538A (ja) 1982-02-18 1982-02-18 集積回路装置

Country Status (1)

Country Link
JP (1) JPS58141538A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290073A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Works Ltd 絶縁分離構造の形成方法

Also Published As

Publication number Publication date
JPS6236390B2 (enExample) 1987-08-06

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