JPS58141505A - Method of producing thin film platinum temperature sensor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] The present invention relates to a method of manufacturing a thin film platinum temperature sensor.

Conventionally, platinum-side temperature resistors have been used for precision temperature sensors, but they have several drawbacks, and temperature sensors using thick or thin film platinum eliminate these drawbacks. However, thick-film platinum temperature sensors lack precision due to the difficulty in controlling the thickness of the film, the mixing ratio of low-grade materials and platinum, and the difficulty in controlling the homogeneity of the mixture.

On the other hand, the R-film platinum temperature sensor has ■ The ability to make the shape smaller\ ■ Durability in terms of vibration, ■ High resistance It is expected that /4 film platinum temperature sensors will continue to be widely used in the future due to their advantages such as ease of processing. In this case, the vacuum deposition method will be used to deposit the platinum thin film. However, this is generally done by a resistive thermal evaporation method, sputtering method, etc. After this, heat treatment is performed for about 1 hour at l100 "0-1400" 0 or about 8 hours at 95 o'C in the atmosphere. However, it is often inconvenient because the heat treatment takes a lot of time.

The purpose of the present invention is to shorten the time for heat treatment after the periosteum.
This was achieved by heating the substrate to a temperature of 50' (3 or more) and introducing atmospheric air before cooling the substrate after film deposition.This shortens the required time and provides the product at a low cost. I was able to do it.

An embodiment of the present invention will be described below. A platinum film is deposited by OC magnetron sputtering. Film deposition rate 200
Film deposition is carried out for about 2 hours at λ/min. Substrate is at 600° during film deposition
Heat to C. After completing the film deposition, immediately introduce atmospheric air. The substrate cools to 120°C in about 15 minutes.

Next, the jar was placed in a furnace at 1100°C in an atmospheric atmosphere for 20 minutes.

The time required for the heat treatment is approximately 20 minutes.

Next, a second embodiment will be explained. Under the same conditions as in the first example above, the substrate was heated to 250'O. The time required for the substrate to drop to 120'O by introducing atmospheric air was 12 minutes. The heat treatment time is 40 minutes.

Next, an eighth embodiment will be described. The substrate is heated to 200°C under the same conditions as in the first example above. It took 12 minutes for the temperature of the substrate to drop to 120° O by introducing atmospheric air. Next, it is placed in a furnace at 1100'0 atmospheric atmosphere for 40 minutes. The time required for the heat treatment is 40 minutes.

Table 1 shows the temperature coefficient of resistance (TCR) as an example showing the characteristics of the thin films obtained in the above eight Examples 1 to B. At a heating temperature of 200°C, TCR decreases slightly.

Next, for comparison, air is introduced after film deposition □
Instead, an example will be described in which the material is cooled in a vacuum chamber as in the conventional method, and then heat-treated in a furnace in an atmospheric atmosphere after heating.

A platinum film is deposited by DC magnetron sputtering. The film deposition rate is 200λ/min and the film is deposited for about 2 hours. During film deposition, substrate 2 (heated at 10'0).After film deposition, it was placed in a vacuum chamber for about 1 hour to cool down to 120'0.Next, it was heated in a furnace at 1100'O for 90 minutes. 6. The time required for heat treatment is 90 minutes.This shows that an additional 46 minutes of cooling time in the vacuum chamber is required.3.The TCR obtained in this example 4 is shown in Table 1. It doesn't change much.

Table 1 and above According to the present invention, the required time can be shortened, and the product can be provided at a correspondingly lower cost.

Representative Hiroshi Morimoto Kagami

Claims (1)

[Claims] l. When depositing platinum on a substrate, 250'
A method for manufacturing a thin film platinum temperature sensor, in which a substrate is heated to a temperature higher than Q and air is introduced before cooling the substrate after film deposition.