JPS58141505A - Method of producing thin film platinum temperature sensor - Google Patents
Method of producing thin film platinum temperature sensorInfo
- Publication number
- JPS58141505A JPS58141505A JP2496282A JP2496282A JPS58141505A JP S58141505 A JPS58141505 A JP S58141505A JP 2496282 A JP2496282 A JP 2496282A JP 2496282 A JP2496282 A JP 2496282A JP S58141505 A JPS58141505 A JP S58141505A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature sensor
- substrate
- platinum
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 本発明は薄膜白金温度センサの製造方法に関する。[Detailed description of the invention] The present invention relates to a method of manufacturing a thin film platinum temperature sensor.
従来より精密温度センサには白金側温抵抗体が使用され
てきたが、いくつかの欠点をもち、これをなくしたもの
が、厚膜あるいは薄膜の白金を用いた温度センサである
。しかし厚膜の白金温度センサは
■ 膜の厚みの制御がしにくい
■ 低材料と白金の混合比率および混合の均質性の制御
が錐かしい
などにより精密性に欠けていた。Conventionally, platinum-side temperature resistors have been used for precision temperature sensors, but they have several drawbacks, and temperature sensors using thick or thin film platinum eliminate these drawbacks. However, thick-film platinum temperature sensors lack precision due to the difficulty in controlling the thickness of the film, the mixing ratio of low-grade materials and platinum, and the difficulty in controlling the homogeneity of the mixture.
一方、R膜白金温度センサは
■ 形状を小さくすることができる
噛\
■ 振動、間第に耐久性、ある
■ 高抵抗i’J (j目で、温度変1lSによる笈蹟
が大きく、信廿処理がしやすい
などの長所を有し、今後とも、/4膜白金温度センサが
多く使用されていくことが予想される,、この場合、白
金薄膜の着膜には、真空着映法が使用さ(し、一般的に
抵抗力ロ熱蒸着法、スパッタリング法などによることが
多い。このあとl100“0−1400”0で1時間程
度、若しくは9 5 o ′Cで8時間程度の熱処理が
大気中で行なわれているが、熱処理に多大の時間を要す
るため不便なことが多か一つtコ。On the other hand, the R-film platinum temperature sensor has ■ The ability to make the shape smaller\ ■ Durability in terms of vibration, ■ High resistance It is expected that /4 film platinum temperature sensors will continue to be widely used in the future due to their advantages such as ease of processing. In this case, the vacuum deposition method will be used to deposit the platinum thin film. However, this is generally done by a resistive thermal evaporation method, sputtering method, etc. After this, heat treatment is performed for about 1 hour at l100 "0-1400" 0 or about 8 hours at 95 o'C in the atmosphere. However, it is often inconvenient because the heat treatment takes a lot of time.
本発明は骨膜後の熱処理の時間を短佑iずることを目的
とするものであり、白金の基体上にa摸するに際し、2
5 0 ’(3以上に基体を加熱するとともに着膜終
了後基体を冷却する前に大気を導入することによりこれ
を達成したものである,これにより、所要時間を短縮で
き、安価に製品を提供できるに至った。The purpose of the present invention is to shorten the time for heat treatment after the periosteum.
This was achieved by heating the substrate to a temperature of 50' (3 or more) and introducing atmospheric air before cooling the substrate after film deposition.This shortens the required time and provides the product at a low cost. I was able to do it.
以下本発明の一実施例を説明する。OCマグネトロンス
パッタリングにより白金を着膜する。着膜レート200
λ/分で約2時間着膜を行なう。着膜中基体は600°
Cに加熱する。着膜終了後、直ちに大気を導入する。基
体は約15分で120°Cに低下する。An embodiment of the present invention will be described below. A platinum film is deposited by OC magnetron sputtering. Film deposition rate 200
Film deposition is carried out for about 2 hours at λ/min. Substrate is at 600° during film deposition
Heat to C. After completing the film deposition, immediately introduce atmospheric air. The substrate cools to 120°C in about 15 minutes.
次壷こ1100°Cの大気雰囲気の炉中に20分間投入
する。Next, the jar was placed in a furnace at 1100°C in an atmospheric atmosphere for 20 minutes.
熱処理所要時間は約20分間である。The time required for the heat treatment is approximately 20 minutes.
次に第2の実施例を説明する。上記第1の実施例と同じ
状態で、基体は250 ”Oに加熱する。大気導入で基
体が120 ’Oに低下するのに要する時間は12分で
あった。次に1ioo’cの大気雰囲気の炉中に40分
間投入する。熱処理所要時間は40分間である。Next, a second embodiment will be explained. Under the same conditions as in the first example above, the substrate was heated to 250'O. The time required for the substrate to drop to 120'O by introducing atmospheric air was 12 minutes. The heat treatment time is 40 minutes.
次に第8の実施例を説明する。上記第1の実施例と同じ
状態で、基体は200°Cに加熱する。大気導入で基体
が120°Oに低下するのに要する時間は12分であっ
た。次に1100’0の大気雰囲気の炉中に40分投入
する。熱処理所要時間は40分間である。Next, an eighth embodiment will be described. The substrate is heated to 200°C under the same conditions as in the first example above. It took 12 minutes for the temperature of the substrate to drop to 120° O by introducing atmospheric air. Next, it is placed in a furnace at 1100'0 atmospheric atmosphere for 40 minutes. The time required for the heat treatment is 40 minutes.
上記8つの実施例1〜Bで得られた薄膜の特性を示す例
として抵抗温度係数(TCR)を示すと、第1表のよう
になる。加熱温度200℃ではTCRはやや低下する。Table 1 shows the temperature coefficient of resistance (TCR) as an example showing the characteristics of the thin films obtained in the above eight Examples 1 to B. At a heating temperature of 200°C, TCR decreases slightly.
次に比較のために、着膜終了後に大気導入する □
のではなく、従来と同じ真空槽中で冷却しrコ後大気雰
囲気の炉中で熱処理を行なった例を説明する。Next, for comparison, air is introduced after film deposition □
Instead, an example will be described in which the material is cooled in a vacuum chamber as in the conventional method, and then heat-treated in a furnace in an atmospheric atmosphere after heating.
DCマグネトロンスパッタリングにより白金を着膜する
。着膜レートは200λ/分で約2時間着膜する。着膜
中基体2 (10’0の加熱である。着膜終了後真空槽
中で120 ’0まで冷却するのに約1時間装する。次
に1100 ’Oの大気雰囲気の炉中に90分間投入す
る6、熱処理所要時間は90分である。このように真空
槽中での冷却時間が46分余計に必要であることがわか
る3、この例4で得られたTCRは第1表に示すように
余り変らない。A platinum film is deposited by DC magnetron sputtering. The film deposition rate is 200λ/min and the film is deposited for about 2 hours. During film deposition, substrate 2 (heated at 10'0).After film deposition, it was placed in a vacuum chamber for about 1 hour to cool down to 120'0.Next, it was heated in a furnace at 1100'O for 90 minutes. 6. The time required for heat treatment is 90 minutes.This shows that an additional 46 minutes of cooling time in the vacuum chamber is required.3.The TCR obtained in this example 4 is shown in Table 1. It doesn't change much.
第1表
以上本発明によれば所要時間を短縮でき、それだけ安価
に製品を提供できる利点を有する。Table 1 and above According to the present invention, the required time can be shortened, and the product can be provided at a correspondingly lower cost.
代地人 森 本 鏡 弘Representative Hiroshi Morimoto Kagami
Claims (1)
Q以上に基体を加熱するとともに、着膜終了後基体を冷
却する前に大気を導入する薄膜白金温度センサの製造方
法。l. When depositing platinum on a substrate, 250'
A method for manufacturing a thin film platinum temperature sensor, in which a substrate is heated to a temperature higher than Q and air is introduced before cooling the substrate after film deposition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2496282A JPS58141505A (en) | 1982-02-17 | 1982-02-17 | Method of producing thin film platinum temperature sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2496282A JPS58141505A (en) | 1982-02-17 | 1982-02-17 | Method of producing thin film platinum temperature sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58141505A true JPS58141505A (en) | 1983-08-22 |
Family
ID=12152595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2496282A Pending JPS58141505A (en) | 1982-02-17 | 1982-02-17 | Method of producing thin film platinum temperature sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58141505A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61502856A (en) * | 1984-07-31 | 1986-12-04 | ロ−ズマウント インコ. | Manufacturing method of platinum resistance thermometer |
-
1982
- 1982-02-17 JP JP2496282A patent/JPS58141505A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61502856A (en) * | 1984-07-31 | 1986-12-04 | ロ−ズマウント インコ. | Manufacturing method of platinum resistance thermometer |
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