JPS58140649U - semiconductor light emitting diode - Google Patents
semiconductor light emitting diodeInfo
- Publication number
- JPS58140649U JPS58140649U JP3751782U JP3751782U JPS58140649U JP S58140649 U JPS58140649 U JP S58140649U JP 3751782 U JP3751782 U JP 3751782U JP 3751782 U JP3751782 U JP 3751782U JP S58140649 U JPS58140649 U JP S58140649U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- semiconductor light
- contact layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は、従来の半導体発光ダイオードを示す断面図、
第２図は従来の半導体発光ダイオードが劣化した状態を
示す断面図、第３図は本考案に基く半導体発光ダイオー
ドの一実施例を示す断面図である。なお図において、１
；Ｎ型１ｆｉＰ基板、２；−□ＩｎＧａＡｓＰ活性層、
３；Ｐ型ＩｎＰクラッド層、４；Ｐ型ＩｎＧａＡＳＰ
ニア ７タクト層、５：絶縁膜、５ ；Ａｕ及びＺｎと
ＩｎＧａＡｓＰとの合金層、７ ；Ｔｉ膜、６ ；Ｐｔ
膜、９ ；Ａｕ膜、ｌ Ｑ ；ＡｕＧｅＮｉ合金膜、１
１；アロイスハ、イク。FIG. 1 is a sectional view showing a conventional semiconductor light emitting diode;
FIG. 2 is a sectional view showing a conventional semiconductor light emitting diode in a deteriorated state, and FIG. 3 is a sectional view showing an embodiment of the semiconductor light emitting diode according to the present invention. In the figure, 1
;N-type 1fiP substrate, 2;-□InGaAsP active layer,
3; P-type InP cladding layer, 4; P-type InGaASP
Near 7 tact layer, 5: insulating film, 5: alloy layer of Au and Zn and InGaAsP, 7: Ti film, 6: Pt
Film, 9; Au film, lQ; AuGeNi alloy film, 1
1; Alois is coming.
Claims (1)
ダイオードにおいて、当該Ｐ型のＩｎＧａＡｓＰコンタ
クト層の表面に発光領域を限定するために付着させた絶
縁膜の一部を除去する領域の大きさを、Ｐ型のＩｎＧａ
ＡｓＰコンタクト層表面へのオーミックな接触を得るた
めに設けたＡｕ及びＺｎとＩｎＧａＡｓＰとの合金化領
域よりも拡げた構造を備えたことを特徴とする半導体発
光ダイオード。In a semiconductor light emitting diode equipped with a P-type InGaAsP contact layer, the size of the region from which a part of the insulating film deposited on the surface of the P-type InGaAsP contact layer to limit the light emitting region is removed is determined as follows: InGa
A semiconductor light emitting diode characterized by having a structure that is wider than an alloyed region of Au and Zn and InGaAsP provided for obtaining ohmic contact with the surface of an AsP contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3751782U JPS58140649U (en) | 1982-03-17 | 1982-03-17 | semiconductor light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3751782U JPS58140649U (en) | 1982-03-17 | 1982-03-17 | semiconductor light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58140649U true JPS58140649U (en) | 1983-09-21 |
Family
ID=30048900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3751782U Pending JPS58140649U (en) | 1982-03-17 | 1982-03-17 | semiconductor light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58140649U (en) |
-
1982
- 1982-03-17 JP JP3751782U patent/JPS58140649U/en active Pending
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