JPS61100160U - - Google Patents
Info
- Publication number
- JPS61100160U JPS61100160U JP18515984U JP18515984U JPS61100160U JP S61100160 U JPS61100160 U JP S61100160U JP 18515984 U JP18515984 U JP 18515984U JP 18515984 U JP18515984 U JP 18515984U JP S61100160 U JPS61100160 U JP S61100160U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ohmic electrode
- emitting diode
- semiconductor light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000005253 cladding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Description
第１図は本考案に基づく半導体発光ダイオード
の構造を示す断面図、第２図ａ〜ｆは、第１図に
示す本考案に基づく半導体発光ダイオードの製造
工程を示す図、第３図は従来技術に基づく半導体
発光ダイオードの第１の例を示す素子断面図、第
４図は従来技術に基づく半導体発光ダイオードの
第２の例を示す素子断面図である。
１……ｎ―ＩｎＰ基板、２……ｎ―ＩｎＰバツ
フアー層、３……ＩｎＧａＡｓＰ活性層、４……
Ｐ―ＩｎＰクラツド層、５……Ｐ＋―ＩｎＧａＡ
ｓＰキヤツプ層、６……絶縁膜、７……ｐ側オー
ミツク電極、８，１１……Ａｕメツキ膜、９……
ｎ側オーミツク電極、１０……モノリシツクレン
ズ、１２……リード電極、１３，１４……フオト
レジスト。
Figure 1 is a cross-sectional view showing the structure of a semiconductor light emitting diode based on the present invention, Figures 2 a to f are diagrams showing the manufacturing process of the semiconductor light emitting diode based on the present invention shown in Figure 1, and Figure 3 is a conventional FIG. 4 is a cross-sectional view of a device showing a first example of a semiconductor light-emitting diode based on the prior art, and FIG. 4 is a cross-sectional view of a device showing a second example of a semiconductor light-emitting diode based on the prior art. 1... n-InP substrate, 2... n-InP buffer layer, 3... InGaAsP active layer, 4...
P-InP cladding layer, 5...P + -InGaA
sP cap layer, 6... Insulating film, 7... P-side ohmic electrode, 8, 11... Au plating film, 9...
n-side ohmic electrode, 10...monolithic lens, 12...lead electrode, 13, 14...photoresist.
Claims (1)
、該基板の一方の表面（第１の表面と呼ぶ）に電
流狭窄構造を有する第１のオーミツク電極を有す
るとともに、前記基板のもう一方の表面（第２の
表面と呼ぶ）に、中心部に開口を有する第２のオ
ーミツク電極を有し、かつ前記基板の第２の表面
の形状が前記開口部において凸レンズ形状をなし
ている半導体発光ダイオードにおいて、前記第２
のオーミツク電極上部にＡｕメツキ膜を備え、か
つこのＡｕメツキ膜の厚さが前記凸レンズ形状の
頂上部の高さよりも高くなる様に設定されている
ことを特徴とする半導体発光ダイオード。 The substrate is a compound semiconductor consisting of a compound semiconductor of the above-mentioned group and a group-group, and has a first ohmic electrode having a current confinement structure on one surface (referred to as the first surface) of the substrate, and a first ohmic electrode having a current confinement structure on the other surface of the substrate (referred to as the second surface). In the semiconductor light emitting diode, the semiconductor light emitting diode has a second ohmic electrode having an opening in the center on the surface of the substrate, and the second surface of the substrate has a convex lens shape at the opening. 2
A semiconductor light emitting diode comprising an Au plating film on the upper part of the ohmic electrode, and the thickness of the Au plating film is set to be higher than the height of the top of the convex lens shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18515984U JPS61100160U (en) | 1984-12-06 | 1984-12-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18515984U JPS61100160U (en) | 1984-12-06 | 1984-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61100160U true JPS61100160U (en) | 1986-06-26 |
Family
ID=30742635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18515984U Pending JPS61100160U (en) | 1984-12-06 | 1984-12-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61100160U (en) |
-
1984
- 1984-12-06 JP JP18515984U patent/JPS61100160U/ja active Pending
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