JPS58140127A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS58140127A
JPS58140127A JP57023823A JP2382382A JPS58140127A JP S58140127 A JPS58140127 A JP S58140127A JP 57023823 A JP57023823 A JP 57023823A JP 2382382 A JP2382382 A JP 2382382A JP S58140127 A JPS58140127 A JP S58140127A
Authority
JP
Japan
Prior art keywords
etching
pressure
end point
pressure value
finish point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023823A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337733B2 (show.php
Inventor
Hitoshi Kudo
均 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57023823A priority Critical patent/JPS58140127A/ja
Publication of JPS58140127A publication Critical patent/JPS58140127A/ja
Publication of JPH0337733B2 publication Critical patent/JPH0337733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Drying Of Semiconductors (AREA)
JP57023823A 1982-02-16 1982-02-16 ドライエツチング方法 Granted JPS58140127A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023823A JPS58140127A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023823A JPS58140127A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58140127A true JPS58140127A (ja) 1983-08-19
JPH0337733B2 JPH0337733B2 (show.php) 1991-06-06

Family

ID=12121073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023823A Granted JPS58140127A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58140127A (show.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4609426A (en) * 1984-05-23 1986-09-02 Hitachi, Ltd. Method and apparatus for monitoring etching
JPH08227879A (ja) * 1995-12-18 1996-09-03 Hitachi Ltd ドライプロセス処理方法及びその装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116532A (en) * 1980-02-15 1981-09-12 Stanley Electric Co Ltd Room-lamp controlling apparatus for cars

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116532A (en) * 1980-02-15 1981-09-12 Stanley Electric Co Ltd Room-lamp controlling apparatus for cars

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4609426A (en) * 1984-05-23 1986-09-02 Hitachi, Ltd. Method and apparatus for monitoring etching
JPH08227879A (ja) * 1995-12-18 1996-09-03 Hitachi Ltd ドライプロセス処理方法及びその装置

Also Published As

Publication number Publication date
JPH0337733B2 (show.php) 1991-06-06

Similar Documents

Publication Publication Date Title
EP0151947B1 (en) Method of plasma etching
US7201174B2 (en) Processing apparatus and cleaning method
EP0308516B1 (en) Method of determining end point of cleaning in an apparatus for manufacturing semiconductor devices
US5877032A (en) Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
US6358327B1 (en) Method for endpoint detection using throttle valve position
EP0841682A2 (en) Method of detecting end point of plasma processing and apparatus for the same
US4936967A (en) Method of detecting an end point of plasma treatment
JP2002526918A (ja) プラズマ・エッチング工程の精度を改善する方法および装置
WO1983000660A1 (en) Gas etching system including end point detection
JPS58140127A (ja) ドライエツチング方法
JP3372840B2 (ja) ドライエッチング装置およびガス流量制御の検査方法
JP3015540B2 (ja) 半導体装置の製造方法
JPH0217634B2 (show.php)
JP2003303777A (ja) プラズマ成膜装置及びクリーニング方法
JPS58140123A (ja) ドライエツチング方法
JPS58140126A (ja) ドライエツチング方法
JPH08288258A (ja) エッチング終点判定方法並びにドライエッチング方法及びその装置
JPH0114698B2 (show.php)
JPH0597579A (ja) 半導体製造装置
JPH0684849A (ja) エッチング方法及びエッチング装置
JPH0468772B2 (show.php)
JP2000124198A (ja) プラズマエッチング装置及びプラズマエッチング方法
US20180068908A1 (en) Smart in situ chamber clean
JPH0637009A (ja) アッシング装置
JPH05102087A (ja) プラズマエツチング終点モニタリング方法