JPS58135427A - Pyroelectric infrared ray detector - Google Patents
Pyroelectric infrared ray detectorInfo
- Publication number
- JPS58135427A JPS58135427A JP57017303A JP1730382A JPS58135427A JP S58135427 A JPS58135427 A JP S58135427A JP 57017303 A JP57017303 A JP 57017303A JP 1730382 A JP1730382 A JP 1730382A JP S58135427 A JPS58135427 A JP S58135427A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- electrode
- photodetecting
- basement
- window material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 5
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 5
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 230000001681 protective effect Effects 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 238000010301 surface-oxidation reaction Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 101100371143 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) tsi6 gene Proteins 0.000 description 1
- 241000282806 Rhinoceros Species 0.000 description 1
- SQVMZJMJMFJRIT-UHFFFAOYSA-N [Br].[Ni] Chemical compound [Br].[Ni] SQVMZJMJMFJRIT-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- JYGXADMDTFJGBT-VWUMJDOOSA-N hydrocortisone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 JYGXADMDTFJGBT-VWUMJDOOSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
- G01J5/35—Electrical features thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、焦電型赤外線検出製置の改良に関する・
〔発明の蚊術的′に量とその間鰯点〕
焦を型赤外線検出装置は、無産１ｌｌｌｒ体区二吸収さ
れた赤外線Ｃ；よる温度変化で表面（二発生する゛ｉ荷
ｔ−測定し、上紀赤外線感；対応した出力！検出するも
のである・赤外線の検出感度を高めると共に応答ン速め
るため、焦電体は、数１０ｐｍの薄片にして用いられる
・このため１例えば焦電体としてＬｉＴａ０．単結晶な
用いる場合、焦電体自身の吸収特性とも合まって赤外線
吸収塾はμｍ以上の長波長帯Ｃ；大きく、短波長帯では
小さくなる。膜長依存性ン少なくするため、ＳＸ体表面
に光吸収材な配賦するのが一般的であり、この場合電極
とかねてしばしば金属薄膜が用いられる。金−ｆＩＩ膜
としては、白金黒や全島等の賞金属の他に、ニッケルや
ニッケルーブロム合金等の比較的比抵抗の高い金−展が
用いられているＯ
しかしなかす、前者では密春力が低く（１頼性か低いの
が欠点である・また、後者では数１０〜数１０ＯＡとい
う非常−二薄い膜の状態で用いるため表面酸化等で性質
が変化し昌＜、前者に比べて４Ｉ８Ｉ軸性は高いが、長
期安定性に欠けると云う間融があった◎
〔発明の目的〕
不発例の目的は、受光−極の集電体への密看力１に：ｌ
１ｒｉ化できると共（：、受光電極の表面酸化Ｃ二よる
餐實を防止することかでき、他軸性および安定性の向上
をはかり得る焦゛ｑ型亦外線検出装置Ｖ提供Ｔること（
：ある・
〔発明の概要〕
不発明者等は、＾ｉ１紀受光受光電極てのニッケル或い
はニッケルークロム合金膜の岐化Ｙｌ？ｊ止するために
、該合金膜上Ｃニレジストからなる保護ＭＹ被嶺するこ
とｔ先≦：打電した０レジストは半尋体工業で実用化さ
れていて誤まりが少なく容易Ｃ；形成で８．かつ′１＠
誉力が尚いので、その保護効果は極めて大きい。しかし
、不兄明者嗜の実験によれは 上記保ｍ膜としてレジス
トＹ用いた場合、レジストが機械的Ｃ″−翁く引つかさ
−が入り易いこと３；起因して゛１歩留りの低下を招く
ことか見出された・そこで、レジストの代りに保護効果
が大で、かつ機械的にも強いシリコン膜を用いれば上記
問題は解決されると考えられる・
本発明はこのような点Ｉ：看目し、赤外線ｖ４人するた
めの密林と、この密林を支持すると共に該密林とで囲ん
だ空間を一定雰囲気Ｃ保持する容器と、焦電体の受光面
にニッケル或いはニッケルークロム合金膜からなる受光
電極を形成すると共に反対面に対電極な形成してなり、
上記窓材および容器で曲んだ空１１ｊ（：配設された戦
′ＩＩＬ累子とｔＪ４備した思電型赤外線検出装置Ｃ：
おいて、前記胤電菓子の受光電極上１；Ｖ９コン麹膜か
らなる保護膜を被暑するようにしたものである０
〔−発明の効果〕
本発明感−よれば、受光電極としてニッケル或いはニッ
ケルークロム合金ｗＡを用いていることから、受光電極
の焦電体への密省力を十分大きくすることができ、ざら
−二受光電極の酸化を防止する保護膜を設けているので
、受光電極の酸化による変１ｉｔｔ’未然Ｃ；防止する
ことができる・このため、悉菫型赤外線検出装置の信頼
性同上ネｊよび経時安定性向上をはかり得る等の効果を
奏する・また、保ａ農として機械的４２強度なシリコン
ｓａｙ用いているので、この保護膜の傷発生等感二起因
して上記装−の歩貿り低下を招くこともないと云う利点
がある・
〔発明の実施例〕
第１１Ｖ（１〜（ｄ）は１本発明の一実施例Ｉ：使用し
た。５竃集子の製造工程を示す断面−である・ます、
第１１ｚ（ａ） ｃ示す如く直径６０ ｍ 、犀さ５０
μｍのＬ ｉ Ｔ ａ Ｌｅａ−Ｚカットウニ八からな
る焦電体ｌ上６；受光電極２としてのニッケルークロム
台金膜ｗ２ｏｏＸの厚さで直径２−リン真空蒸看等で遍
択形成した◎そしそ、受光電極２１；−接して配線用の
Ａｔ膜１ｖ約２−の厚さシ：廐択形成した。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to improvements in a pyroelectric infrared detection device. Infrared rays are absorbed by the body; due to temperature changes on the surface (2), the infrared rays generated on the surface are measured; In order to speed up the response, the pyroelectric material is used in thin pieces of several tens of pm.For this reason, for example, when using a single crystal of LiTa0 as the pyroelectric material, infrared absorption is Long wavelength band C of μm or more; large, and becomes small in short wavelength band.In order to reduce film length dependence, it is common to arrange a light absorbing material on the surface of the SX body, and in this case, it is often used as an electrode. A thin metal film is used.As the gold-fII film, in addition to prize metals such as platinum black and Zenjima, gold-based films with relatively high resistivity such as nickel and nickel-brom alloy are used. The disadvantage of the former is that the strength is low (low reliability).In addition, the latter is used in an extremely thin film of several tens to several tens of OA, so its properties change due to surface oxidation, etc. , the 4I8I axiality was higher than the former, but there was a problem that it lacked long-term stability. :l
To provide a concentric type extra-radiation detection device V which can be made into a single integrated circuit, which can prevent damage caused by surface oxidation of the light-receiving electrode, and which can improve multi-axis property and stability.
：Yes・ [Summary of the invention] Those who do not invent the invention are interested in the branching Yl of the nickel or nickel-chromium alloy film of the 1st generation light-receiving electrode. In order to prevent this, the alloy film must be covered with a protective MY resist made of a C resist.T ≦: The electrically applied O resist has been put into practical use by the Hanhiro Tai Kogyo and is easy to form with few errors. Katsu'1@
Since it has a high honor power, its protective effect is extremely large. However, according to unscrupulous experiments, when resist Y is used as the above-mentioned molar retaining film, the resist is susceptible to mechanical C'' - which leads to a decrease in yield. Therefore, it is thought that the above problem can be solved by using a silicon film that has a large protective effect and is mechanically strong instead of a resist.The present invention solves this problem. It consists of a jungle for four people to view and infrared rays, a container that supports this jungle and maintains a constant atmosphere C in the space surrounded by the jungle, and a nickel or nickel-chromium alloy film on the light-receiving surface of the pyroelectric body. A light receiving electrode is formed and a counter electrode is formed on the opposite side.
The sky 11j bent by the above window material and container (: Thought-type infrared detection device C equipped with Sen'IIL Seiko and tJ4 installed:
According to the sense of the present invention, a protective film made of a V9 koji film is exposed to heat on the light-receiving electrode of the Tanden confectionery. Since the nickel-chromium alloy wA is used, it is possible to sufficiently increase the density of the light-receiving electrode to the pyroelectric material, and since a protective film is provided to prevent the oxidation of the light-receiving electrode, the light-receiving electrode It is possible to prevent deterioration due to oxidation of Since mechanically strong silicone is used, there is an advantage that there is no reduction in the manufacturing efficiency of the device due to the occurrence of scratches on the protective film. [Embodiments of the Invention] 11V (1 to (d) are 1 Example I of the present invention: Used.
No. 11z (a) c As shown, diameter 60 m, rhinoceros size 50
On the pyroelectric material 1 consisting of L i T a Lea-Z cut sea urchin of μm 6; nickel-chromium base gold film as the light-receiving electrode 2 with a thickness of 2-diameter 2-phosphorus vacuum vaporization etc. Then, the light-receiving electrode 21 was formed with a thickness of about 2 volts and an At film for wiring in contact with it.
次いで、弔１図（呻≦二示す如くシリコン薄膜からな゛
る保護ＦＩ４４’に受光電極２ ’Ｃ合せて２０００〜
５０００ Ａ蒸着形成した・ざら（−１恩電体ｌの表面
Ｃ一対′蝋４！ｉｋｊとしてのニッケルークロム合金膜
・ｖ２００λの厚さで全面に形成した・その後。Next, as shown in Figure 1 (Oan ≦ 2), the protection FI 44' made of a silicon thin film and the light receiving electrode 2'C are combined to 2000 ~
A nickel-chromium alloy film with a thickness of 200λ was formed on the entire surface as 5000A by vapor deposition.
！Ｉ％ＩＩＮ（ｃ）に示す如くエツチング等で中空加工
した中空シリコン支持体６を電極形成した焦電体Ｊ ｃ
導電接着剤ｒ等で接着する′こと砿：より、１枚のウニ
八日Ｃ：多数の焦電素子１０ｖ形成した。! I%IIN (c) As shown in (c), a pyroelectric body J c is formed by forming an electrode on a hollow silicon support 6 that has been hollowed out by etching or the like.
A large number of pyroelectric elements (10v) were formed on one sheet of pyroelectric elements by bonding them with a conductive adhesive or the like.
次いで、第１−（ｄ）Ｃ示す如き各々の無電素子１０に
するため、ダイリング一二よりウニへを分割した・
第２内は、本発明の一実施例製麹の概略構成ヲ一部切欠
して示す斜視−である・４１０５ヘツダの基台ｌＪ上Ｃ
；上記の方法で作られた焦電テップ、ｆなわち焦電素子
ｌＯと、ＦＢＴｚ Ｊ、入力抵抗チップｔｓｉ６よび出
力抵抗テップ１４とが接看剤≦；よって配設されている
・これら無電素子１０、ＦＢＴＩＪ、入出力抵抗１３．
１４は、ボンデングによって電気的に接続される・基台
全体は、シリコン窓材１５が支持され、なおかつ内部を
一定雰囲気に保持できるシェル１６で封止されている・
赤外−はシリコンＷＥ７１５ ｊ’通して入射し、焦電
素子ＩＯの受光［ｋｌ １０ ａ ｃ吸収され、焦１１
素千ｌＯの温度変化ケおこし、これ５：対応して電ｆ七
Ｙ発生させる・軍備はＦＩＴＪ２に辱びかれ。Next, in order to make each electroless element 10 as shown in Part 1-(d)C, the die ring 12 was divided into sea urchins. Part 2 shows a part of the schematic structure of the koji-made koji according to an embodiment of the present invention. This is a perspective view shown with a cutaway.4105 header base lJ top C
The pyroelectric tip, f, that is, the pyroelectric element lO, made by the above method, the FBTz J, the input resistor chip tsi6, and the output resistor tip 14 are disposed as a contacting agent≦;Thus, these non-electronic elements 10. FBTIJ, input/output resistance 13.
14 is electrically connected by bonding.The entire base supports the silicon window material 15 and is sealed with a shell 16 that can maintain a constant atmosphere inside.Infrared is made of silicon WE715 j' The light enters through the pyroelectric element IO and is absorbed by the pyroelectric element IO [kl 10 a c, and the pyroelectric element IO
A temperature change of 1,000 lO is caused, and this 5: In response, an electric current of f7Y is generated.・The armament is humiliated by FITJ2.
インピーダンス変換された後ＦＢＴＩ：Ｉのソース側か
らｍ＋＋記基台１１ｖ押通し、かつ絶猷体によって支持
されたリード端子１２を介して外部にイ目号として取出
される。After impedance conversion, the m++ mark is pushed through the base 11v from the source side of the FBTI:I and taken out as an I mark to the outside via the lead terminal 12 supported by the insulated body.
このように４１Ｈｔｋされた本装置ｇｋｖ１２ｓ℃。This device gkv12s℃ was heated for 41Htk in this way.
１０００時間のＩＩｉｂＩＭ保存試験を行なったところ
。A 1000 hour IIbIM storage test was conducted.
従来の保護膜なしの焦？ｌｉＩ型赤外線検出装置では不
良率３僑であったのが、保ｄＩＳを形成した本装置では
０．１鳴以下Ｉ：同上した・これは、受光−極２として
のニッケルークロム台金膜の酸化１による不良が減少し
たためである・かくして１本爽弛例３：よれは、ニッケ
ルークロム台金Ｙ用いた受光電極２の他軸性を大きく同
上させ。Traditional oxidation without a protective film? In the liI type infrared detection device, the defect rate was 3%, but in this device with a protective IS formed, it was less than 0.1 I: Same as above. This is due to the failure rate of the nickel-chromium base metal film as the light receiving electrode 2. This is because the defects due to oxidation 1 have been reduced. Thus, one wire has become loose.
不変−【３僑から０．１％以下（二大きく低減すること
かできた。Unchanged: 3% to 0.1% or less (2) A significant reduction was achieved.
なお１本発明は上述した＊＆例（二限定されるものでは
なく、その要′＃１１に逸脱しない範囲で檀々変形して
実施することができる・例えばｓ 自＋］紀受光電極と
してはニッケルークロム台金膜の代１月二ニッケルＮＹ
用いてもよい・また、−１記焦電体はＬＩＴａ０１単結
晶としたが、他の魚篭体でも同様な効果が得られるのは
勿論のことである・Note that the present invention can be carried out in various ways without departing from the above-mentioned *& examples (2), but are not limited to them, without departing from the main points. Nickel-chrome base gold film price January 2 Nickel NY
Also, although LITa01 single crystal was used as the pyroelectric substance in -1, it goes without saying that similar effects can be obtained with other fish cages.
ｆｍ １ 図（４）〜（ｄｉは本発明の一実施例１ユ使
用した焦電素子の製造工程を示す断面内、第２図は本発
明の一実施例の概略構成を一部切欠して示す斜視図であ
る・
ｌ・・・ＬｉＴａＬ）、ウェハ廖電体入２・・・受光電
極、３・・・Ａｔ膜（配線電極）、４・・・シリコン保
護膜。
５・・・対電極、６・・・中空シリコン支持体、７・・
・尋゛岨性接暑剤、ｔｏ・・・焦電素子、７１・・・基
台、７２・・・ＦＮＴ、１３・・・入力抵抗、１４・・
・出力抵抗、ｔｓ・・・シリコンｆ／Ｂ、１ｇ−ｒ・シ
ェル、７７・・・リード端子０fm 1 Figures (4) to (di are cross-sectional views showing the manufacturing process of the pyroelectric element used in Example 1 of the present invention, and Figure 2 is a partially cutaway diagram of the schematic structure of an example of the present invention. 1...LiTaL), wafer-containing electrode 2...light receiving electrode, 3...At film (wiring electrode), 4...silicon protective film. 5...Counter electrode, 6...Hollow silicon support, 7...
- Thickening heat exchanger, to...pyroelectric element, 71...base, 72...FNT, 13...input resistance, 14...
・Output resistance, ts...Silicon f/B, 1g-r・Shell, 77...Lead terminal 0
Claims (1)
某−；核窓材とで囲んだ空間ｌ一定定日囲気保持する容
器と、煕鴫体の受光面にニッケル或いはニッケルークロ
ム合金膜からなる受光−極Ｙ＃成すると共に反対面６二
対爾極を形成してなり、上記窓材・および容器で囲んだ
空間に配設された思電素子とン興儒した嵐電型赤外線梗
出装−Ｃ；おいて、かｊｉｒ′、麿、場素子の受光゛−
極上にシリコン＃展からなる保ｗｍｙｘ′４ｊ！看して
なるものであることを特徴とする烈電型赤外線検出製ｋ
。A space surrounded by a window material for introducing infrared rays Y, a nuclear window material that supports this window material, a container that maintains an atmosphere for a fixed period of time, and a nickel or nickel-chromium alloy on the light-receiving surface of the glass body. It is composed of a light-receiving pole Y# consisting of a membrane, and 62 pairs of opposite poles, and is an interesting Arashiden type with a thinking element arranged in the space surrounded by the window material and container. Infrared radiation exposure device-C;
Ho wmyx'4j consisting of the best silicon #exhibition! A product made by electric shock type infrared detection, which is characterized by the fact that it can be detected by
.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57017303A JPS58135427A (en) | 1982-02-05 | 1982-02-05 | Pyroelectric infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57017303A JPS58135427A (en) | 1982-02-05 | 1982-02-05 | Pyroelectric infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58135427A true JPS58135427A (en) | 1983-08-12 |
Family
ID=11940233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57017303A Pending JPS58135427A (en) | 1982-02-05 | 1982-02-05 | Pyroelectric infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58135427A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62822A (en) * | 1985-06-27 | 1987-01-06 | Matsushita Electric Ind Co Ltd | Infrared detecting element |
| JPS6367531A (en) * | 1986-09-10 | 1988-03-26 | Matsushita Electric Ind Co Ltd | Dielectric thin film element and its manufacture |
-
1982
- 1982-02-05 JP JP57017303A patent/JPS58135427A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62822A (en) * | 1985-06-27 | 1987-01-06 | Matsushita Electric Ind Co Ltd | Infrared detecting element |
| JPS6367531A (en) * | 1986-09-10 | 1988-03-26 | Matsushita Electric Ind Co Ltd | Dielectric thin film element and its manufacture |
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