JPS58128766A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS58128766A JPS58128766A JP1197082A JP1197082A JPS58128766A JP S58128766 A JPS58128766 A JP S58128766A JP 1197082 A JP1197082 A JP 1197082A JP 1197082 A JP1197082 A JP 1197082A JP S58128766 A JPS58128766 A JP S58128766A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- turn
- region
- gate
- diode region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002689 soil Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000004904 shortening Methods 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 240000007594 Oryza sativa Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 241000270666 Testudines Species 0.000 description 2
- 235000003642 hunger Nutrition 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 230000037351 starvation Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001580 bacterial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 206010061592 cardiac fibrillation Diseases 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 210000002468 fat body Anatomy 0.000 description 1
- 230000002600 fibrillogenic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Abstract
Description
【発明の詳細な説明】
本発明は、サイリスタ、輪にサイリスタ領域とダイオー
ド領域を一一半尋悴基俸に共働し°Ｃなる逆尋ｉａ型の
サイリスタにわいて、ターンオフ時に、ゲート−カソー
ド間を逆バイアスすることで、ターンオフ時間を短緬さ
セ、るいわゆΦゲート梱助ターンオフサイリスタや、ケ
ート−カソード向を逆バイアスすることでｔｉｉｉ接タ
ーンオフさせるケートターンオフサイリスタのｋｍに圓
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thyristor, a reverse dia type thyristor in which a thyristor region and a diode region work together in a ring at a temperature of 1.5 °C. By applying a reverse bias between the cathodes, the turn-off time can be shortened, and by reverse biasing the cathode direction, the turn-off thyristor can be turned off directly. .
従来よう、サイリスタの土なる応用分動、伝えは、ＤＣ
チョッパやインバータ辰−でＩよ、サイリスタと逆並列
にダイオードを接帆−３−る場合か多く、その熱動と相
まって、同−半一体基体内に、サイリスタと逆並列にタ
イ４−ドを接枕した、逆導通サイリスタか捉業され、現
在では、％Ｌ鉄用チョッパ川用子の主九となっている。Conventionally, the basic application of thyristors, the transmission, is DC
In many cases, a chopper or an inverter has a diode tied in anti-parallel to the thyristor, and combined with its thermal movement, a tie is connected in anti-parallel to the thyristor within the same semi-integrated base. The reverse-conducting thyristor, which is connected to the iron, has been developed and is now the main component of the %L iron chopper.
この逆４ｍサイリスタは、その軸比上、逆方１−の耐圧
をほとんど必要としないため、サイリスタ領域をｐｎ”
１ｐｎＴｈ造で形成することができる。This reverse 4m thyristor requires almost no reverse 1- withstand voltage due to its axial ratio, so the thyristor area is pn"
It can be formed using 1 pnTh structure.
かかるｐｎ十ｉ ｐｎ構造（工、従来のｐｎｐｎ １ｍ
造に比べ、−一ベース朧の幅でｌｌ１ｉｌ＋１比を実現
できる。Such a pn10i pn structure (engineering, conventional pnpn 1m
Compared to the structure, it is possible to achieve the ll1il+1 ratio with a width of -1 base oboro.
いいかえれはｐｎ＋ｉ ｐｎ Ｉｉｌ造は、ｐｎｐｎ
構造と同−耐圧を麺いベース胸幅で実現できる。このベ
ース胸幅ＯＮ）とオン電圧ｖＴとターンオフ時間をきめ
るキャリアライフタイムτとの同には、
Ｖ−１−“ｅＸｐＰ＝０）関係かあり・１肚・″ゐ容態
・ターンオフ時間の商にはトレードオフの菌体となる。Change is pn+i pn Iil construction is pnpn
The same pressure resistance as the structure can be achieved with the width of the noodle base. There is a relationship between the base chest width (ON), the on-voltage vT, and the carrier lifetime τ that determines the turn-off time. becomes a trade-off bacterial cell.
ここでＩＪ ｌａ ｓベース〜における９歓キャリアの
拡敞保数である。上式から明らかなように、ベース鳩−
Ｗの低敵は、オン電圧を小さくする。すなわち、ｋｔｌ
ｔＧ谷鳳の増大かはかれる。また、同一オン−比であれ
は、キャリアライフタイムの短輸か可能となる。かかる
坂出により、ｐｎ”ｉ ｐｎ橘造を用いることで従来の
ｐｎｐｎ檎造では犬現不用詑でめった１比２５００Ｖ、
＊流谷翫１０００Ａ、 ターンオフ時間８０μｓを
笑現しＣいる。Here is the expansion number of 9 kan carriers in IJ las base ~. As is clear from the above formula, the base pigeon −
A low value of W reduces the on-voltage. That is, ktl
I can measure the increase in tG Taniho. Furthermore, if the on-ratio is the same, the carrier lifetime can be shortened. Due to this Sakaide, by using pn"i pn Tachibana, the voltage of 1 ratio 2500V, which is rarely achieved with the conventional pnpn pn pn, is 2500V.
*Nagaretani 1000A, with a turn-off time of 80μs.
しかしなから、チョッパ、インバーター装賑の＾効率化
をはかるには、さらにターンオフ時間を短編することか
強く望まれるようになっている。However, in order to improve the efficiency of chopper and inverter installations, there is a strong desire to further shorten the turn-off time.
本５５明は、かがる一点からなされたもので、逆アスす
るいわゆるゲートターンオフやケート補助ターンオフ時
概を効未的に進寺地サイリスタに急用し、ターンオフ時
間を短幅するｔこめのらのである。This book 55 was developed from one point, and it uses the so-called gate turn-off and gate auxiliary turn-off time of reverse assembling to the Shinjiji thyristor, and shortens the turn-off time. be.
第１因に小す従来橋造を伝にとり胱ゆｊする・糺２１に
その喝０価回細を小す。第１因で（１） ｌユ半尋俸品
外、（２）は第１編遍投の第１ヘースノー、（３月よ第
２尋魁型のシ２ベース％、（４／は比２寺電型の第ｌエ
ミッター、（６月ｊ第１尋電型υ）第２エミッタ１−１
（６）は−万の主表面Ｏυに胤山しｌ、：見２ベースＩ
ｍ、（７１は船２エミッタ）ｋｋｉ （５Ｊとオーミッ
ク捧触ｔな丁カソードー操、（８月Ｊ土表ＩｋＩＱｖに
路用した鴎２ヘースＪ−とオーミック接触をム１ケート
′＃４Ｌ柿、（ｔｕｔよ主表面ｏｂに亀出した第２編−
型の第２ベース／ｉｗ （Ｊとオーミック＆Ｆｆｌをな
１タイ４−ド領域（υｉ）の電櫓、αＱはｔｕ諌已ＭＪ
１エミッタノー（４）ゎよひ九１ベースＩ１ｍ （２Ｊ
にｌ１１１＃払し、かつ主人ｔｈＪａ４に細出し第１ベ
ース膚（２）と１−一纏−型の区低仇ノー（２どとオー
ミック接触ななすアノード電画で、アノード囚に伍帆さ
イＬ°ｃいる。The first factor is the conventional Hashizo, which is small, and the 0-value summary is reduced to 21. The first factor is (1) l Yu Hanjin's salary, (2) is the 1st Hesnow of the 1st edition, (March, the 2nd Genkai type's 2 base%, (4/ is the ratio of 2 The 1st emitter of the temple electric type, (June j 1st electrician type υ) the 2nd emitter 1-1
(6) is -Taneyama on the main surface Oυ of 10,000, : see 2 base I
m, (71 is ship 2 emitter) kki (ohmic contact with 5J, cathode operation, (ohmic contact with seagull 2 Hose J-, which was used on August J soil surface IkIQv), (Tut, the second part where a turtle appears on the main surface ob-
2nd base of the type /iw (J and Ohmic & Ffl are 1 tie 4-de area (υi) electric tower, αQ is tu Isami MJ
1 emitter no (4) wayohiku 1 base I1m (2J
111#, and the first base skin (2) that is thinned out to the master thJa4 and the 1st base skin (2) and the 1st type of ku low enemy no (2 etc.) and the anode electric picture that makes ohmic contact, and the anode prisoner is I'm here.
ｈ丙で、仏々のゲート１檎（８ハエ、各々、ゲート籾に
接続されている。又、−々のエミッター檎（ＩｓＪと（
９）はカソード頓に接続されている。又石２エミッタ鳩
（６）と毘２ベース層（３）とで形成される接合は１３
石２ペ一ス層（３）と第１ベース膚（２）とで形成され
る接合はＪｇ、低抵抗層（２）′と亀１エミッタ胸（４
）で形成される接合はＪｌである。In h C, there are 1 gate of Buddha (8 flies, each connected to the gate rice. Also, - each emitter of gate (IsJ and (
9) is connected to the cathode. Furthermore, the number of junctions formed between the stone 2 emitter layer (6) and the bi2 base layer (3) is 13.
The junction formed by the stone two-piece layer (3) and the first base skin (2) is Jg, the low resistance layer (2)' and the turtle one emitter chest (4
) is Jl.
かかる構造の超２）通形のゲート補助ターンオフサイリ
スタやゲートターンオフサイリスタでは、ターンオフ時
にゲート６）とカソード翰間に逆バイアス電圧を叩加し
た場合、ゲートリ）とカソード輪間に施れる１１＆Ｌｖ
ｒＬは、残置キャリアによるｋｋｋｊｔと電極（８）と
−榔（９）鵬の抵抗Ｒによって制除される一九ｊ１とな
る。ターンオフ時間を短輸丁９には、残置キャリアによ
るｍ＆ｊｌを大きくする必要かある。In a super-2) gate-assisted turn-off thyristor or gate turn-off thyristor with such a structure, when a reverse bias voltage is applied between the gate 6) and the cathode ring during turn-off, a voltage of 11&Lv is applied between the gate 6) and the cathode ring.
rL becomes 19j1, which is controlled by kkkjt due to the remaining carrier and the resistance R of the electrode (8) and the electrode (9). It is necessary to increase m&jl due to the remaining carrier for the transport plate 9 with a short turn-off time.
抵抗Ｒによって阪れる）ｋ６ｔｃは、ターンオフ時間の
短幅には伺等奇与せず、Ｊ２に九れる電池の分たけｊ＋
を低下させるためＧ−に間逆バイアスによるターンオフ
時間の短軸効果を低絃させる。そこで、従来檎造では、
抵抗Ｒを大きくするために、ＩＩＬ檎（８）とｗＩＬ極
〈９）の距−（分勲憎）を充分大きくする必要があった
。例えは、１５Ｖ（７）逆バイアスで１５ＡＮ度の１ｌ
ｋｆｋＧを麺き出し、ｊ２をｊ＋の１０力札度に押えよ
うとすれはその抵抗Ｒを１０Ω柱度にする必要がある。k6tc has no effect on the shortness of the turn-off time, and the battery division j +
In order to reduce the short-axis effect of the turn-off time due to the reverse bias between G- and G-, the short-axis effect of the turn-off time is reduced. Therefore, in traditional ink making,
In order to increase the resistance R, it was necessary to make the distance between the IIL pole (8) and the wIL pole (9) sufficiently large. For example, 1l of 15AN degrees with 15V (7) reverse bias
In order to bring out kfkG and suppress j2 to the 10-power degree of j+, it is necessary to set its resistance R to 10-ohm degree.
通常サイリスタの第２ベース層（３）の、ミート抵抗（
ρｓ）１．Ｌ＊十Ωに形成される。この場合に、リング
状の分離をし廻し、ｗＬ檎（８）の取外周の半佳ｌｋ：
ｒ１１亀＠ （９１の内周の半径をｒ２と丁れは、抵抗
Ｒは
Ｒ＝−組 Ｉｎ−で表わされる。Normally, the meet resistance (
ρs)1. Formed to L*10Ω. In this case, a ring-shaped separation is carried out to remove the outer periphery of the wL apple (8).
r11 Tortoise@ (If the radius of the inner circumference of 91 is r2, the resistance R is expressed by the set R=-In-.
２π ｒｌ
ここで、飢えはｒｌを２０ｕ１分艦惜を２霧とした場合
には、Ｒ＝ ０．６ム稲良１こしかならない。2π rl Here, if rl is 20 u1, and 2 pi rl is starvation, then R = 0.6 mu rice 1 kiri.
１０ｊｌｋ私度のＲを夫祝するには、ｒ２／ｒｌを４以
上にする必要かあり、１幻血恒の低顛をもｔこらし、拳
笑上実現不田能でゐつＩＪ。In order to congratulate R of 10jlk, it is necessary to increase r2/rl to 4 or more, and IJ who is unable to realize it with a fist laugh even with the low performance of 1 Genketsu.
本尭明は、従来のかかる入点を改善丁べくなされｆこも
ので、第８−に小丁実廊帆からも明らかなように、第１
ベース膚（２〕を土衣凹συに亀山させて、従来鈴では
共通であつｔこサイリスタ饋域囚とダイオード領域の）
の第２ベースｍ （３７を分軸することを特徴としてい
る。Motoyaaki was an attempt to improve this conventional entry point, and as is clear from the 8th and 8th book, the 1st
The base skin (2) is made to have a Kameyama on the soil concave συ, which is common in conventional bells (in the thyristor region and diode region).
The second base m (37) is the second axis.
かかる栴造では、Ｃ）−０ｎに逆バイアスが印加された
時、亀＠ （８）と１１＆Ｌ檎（９）との向には２つの
接合１２かあるため、その間の抵抗Ｒは無限大となり、
１に極（８）と電極（９）の間を振れるー旅すを０にす
ることができる。すなわち、残留キャリアによるｌ１Ｉ
ＩＬ流ｊｔのみを６）−■関連バイアスによって有効に
細き出すことかできる。又その分離幅は一々第２ベース
Ｍｉｌ（２）の大きさでよい。例えば２５００Ｖ素子の
場合、分離幅は２００μｍ程度となり、従来例より１桁
以上小さい分船幅で、無限大の抵抗Ｒを実現することか
できる。In this SEIZO, when a reverse bias is applied to C)-0n, there are two junctions 12 in the direction of turtle@(8) and 11&L(9), so the resistance R between them becomes infinite. ,
1, the swing travel between the pole (8) and the electrode (9) can be reduced to 0. That is, l1I due to residual carrier
Only the IL flow jt can be effectively narrowed down by 6)-■ related bias. Further, the separation width may be equal to the size of the second base Mil(2). For example, in the case of a 2500V element, the separation width is approximately 200 μm, and an infinitely large resistance R can be realized with a separation width that is one order of magnitude smaller than the conventional example.
なお本発明は、上記失施帆に限追されるものではなく、
例えは、 ｐｎｐｎ構造の逆導通ゲート柚助ターンオフ
サイリスタ、ゲートターンオフサイリスタ、逆導通トラ
ンジスタにも応用できることはいうまでもない。Note that the present invention is not limited to the above-mentioned lost sails,
For example, it goes without saying that it can be applied to a reverse conduction gate Yuzusuke turn-off thyristor, a gate turn-off thyristor, and a reverse conduction transistor having a pnpn structure.
以上のように本発明によるサイリスクは、相刈面する一
対の主表曲を１する半導体基体の中に少なくともｐｎｐ
ｎの一次隣接した４層領域からなるサイリスタ領域（Ｔ
ｈ）と、＠ｄ ｂ＊ ’グイリスタ饋ｆｍを構成する中
筒のｎ−とｐ Ｊｋを各々６１シ半寺休柩体の異な９王
衣−着こ路出しＣなるタイ掴−ドー楓（ＩＪｉ） と
４−４Ａ＠え、８ｄ犯サイリスタ餓域（１ｈ）の申開の
接合」２と曲ＩＩＣタイ耳−ド餉叡（Ｄｌ）の張合ｊ２
とか、同一の主人四に細出し、かつヌ！Ｉ閥１°るよう
に＃ｌＪａされ°Ｃいるので、サイリスター域のケート
−勧とダイオード−楓の一榔向の煽りＬを従来のものに
比べて凧ｍｂｉこ植入゛することか−（き、ターンオフ
軸＆を大幅に数置することかできる。As described above, the silicon risk according to the present invention includes at least pnp in a semiconductor substrate having one principal surface curve in a pair of phase-cutting planes.
Thyristor region (T
h) and @d b* 'The n- and p Jk of the middle tube that make up the Guirista fm are 61 each, and the 9 different 9 royal clothes of the half-temple resting body - the arrival and departure of the road C become the tie grip - the do Kaede ( IJi) and 4-4A@E, 8d criminal thyristor starvation area (1h) combination of ``2'' and song IIC Thai ear-de-seni (Dl) combination j2
Or, stripping out to the same master, Katsunu! Since #lJa is set to 1°C, it is better to implant the gate in the thyristor region and the fan L across the diode in the kite mbi compared to the conventional one. It is possible to significantly increase the number of turn-off axes.
４、 区画の１＋１１単な祝明
第１丙（よ、従来のケート細動又はケートターンオフサ
イリスタを小−ｊｇ岨〜１面輪造区、第２凶１ｊその等
価回珀因、ｋ４８凶は本％明の一失九カをボ丁抛輪ｌＩ
１曲摘造凶である。4. Section 1 + 11 simple Zhu Ming No. 1 (Yo, the conventional Kate fibrillation or Kate turn-off thyristor is small - JG ~ 1 side rotation area, No. 2 No. 1J is the equivalent recovery cause, K48 No. is the original %The loss of 9 points of light is taken away.
One song is a complete failure.
なお、凶ｌ−１−１１−−付＋５＋工向−または相当部
分をホ丁Ｑ
（１］・・・半尋俸品体、（２川・・第１ベース膚、（
３〕・・・第２ ）ベース−１（４）・・・ｔｉ
ｌ−，１エミッタ７１ｔｈ７．（６）・・・第２工芝ツ
タノー、（６）・・・第２ベースノＮ、（７）・・・カ
ソード１４Ｌ梅、（８）・・・ゲート％Ｌ極、（９）・
・・ｌｌａ像、ＯＱ・・・アノード電極、（Ｔｈ ）・
・・サイリスタ領域、（Ｌ）ｉ）・・・ダイオード領域
、６）・・・ゲート、（転）・・・カソード、（イ）・
・・アノード、（ｈ）（Ｉｓ） （Ｉｓ）・・・接合。In addition, 1-1-11-- + 5 + engineering direction - or the equivalent part is Hocho Q (1)...Half fat body, (2 rivers...1st base skin, (
3]...2nd)Base-1(4)...ti
l-, 1 emitter 71th7. (6)...Second artificial grass tube, (6)...Second base N, (7)...Cathode 14L plum, (8)...Gate % L pole, (9)...
...lla image, OQ... anode electrode, (Th)
...Thyristor region, (L)i)...Diode region, 6)...Gate, (inversion)...Cathode, (I)...
... Anode, (h) (Is) (Is)... Junction.
代理人 掲 ｋｒ 他 −
第１図
第２図
第３図
に
特許庁長官殿
１、事件の表示 特願昭６テ一１１１ＴＯ号２、
発明の名称
サイリスタ
３、補正をする者
６、補正の対象
図面
６、補正の内容
図面中の第２図を別紙の通り訂正する。Agent posted by kr et al. - Figure 1, Figure 2, Figure 3 shows the Commissioner of the Japan Patent Office 1, and the case is shown in Patent Application No. 111TO No. 111 of 1983,
Name of the invention Thyristor 3, person making the correction 6, drawing to be corrected 6, contents of the correction Figure 2 in the drawings will be corrected as shown in the attached sheet.
以上 第２図that's all Figure 2
Claims (1)
に少なくともｐ ｎ ｐ ｎ Ｑ）−次鉤板し、た４Ｐ
＃Ｉ領域からなるサイリスタ開城と、１記サイリスタ領
域を禍成テる＋−のｎノーとｐ胸を各々ｌＩｕ記半導体
基体の異なる王表回に麹出しＣなるタイオード領域とを
備え、ＩＩｔｌｌ！ｃサイリスタ領域の中間の接合と曲
りしタイオード領域の接合とが同一の上衣面に胤出し、
かつ刈面していることをｌＮｆ？１にとするサイリスタ
。 （２１タ一ンオフ時にサイリスタを転死させ、かつゲー
ト−カソード間を逆バイアスするケート補助ターンオフ
により、ターンオフ時間を短輪する機能をもつ特許請求
の軛囲第１項記秘のサイリスタ。 （３）ゲートターンオフｔａ日ビをもつ特許請求の範囲
船１樵Ｈａ戦のサイリスタ。[Scope of Claims] (1) At least p n p n Q)-next plate is placed in a semiconductor substrate having a pair of soil surfaces facing each other;
A thyristor opening consisting of the #I region, and a diode region consisting of a kojidashi C and a +-n no and p chest which are connected to the thyristor region 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1, respectively, respectively, and a diode region consisting of a kojidashi C on different sides of the semiconductor substrate, IItll! c The middle junction of the thyristor region and the junction of the bent diode region are exposed on the same upper surface,
And that the surface is cut is lNf? Thyristor with 1. (21) The thyristor disclosed in Paragraph 1 of the patent claim, which has the function of shortening the turn-off time by causing the thyristor to fall during turn-off and reverse biasing between the gate and the cathode. (3 ) A thyristor for the claimed ship 1 lumberjack with a gate turn-off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197082A JPS58128766A (en) | 1982-01-27 | 1982-01-27 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197082A JPS58128766A (en) | 1982-01-27 | 1982-01-27 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58128766A true JPS58128766A (en) | 1983-08-01 |
Family
ID=11792469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1197082A Pending JPS58128766A (en) | 1982-01-27 | 1982-01-27 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58128766A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62205661A (en) * | 1986-03-05 | 1987-09-10 | Mitsubishi Electric Corp | Manufacture of reverse conducting gto |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50117377A (en) * | 1974-02-28 | 1975-09-13 | ||
| JPS5336999A (en) * | 1976-09-16 | 1978-04-05 | Rheinmetall Gmbh | Propulsive powder explosive |
| JPS5375430A (en) * | 1976-12-17 | 1978-07-04 | Toshiba Corp | Inverse conduction gto rectifler |
-
1982
- 1982-01-27 JP JP1197082A patent/JPS58128766A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50117377A (en) * | 1974-02-28 | 1975-09-13 | ||
| JPS5336999A (en) * | 1976-09-16 | 1978-04-05 | Rheinmetall Gmbh | Propulsive powder explosive |
| JPS5375430A (en) * | 1976-12-17 | 1978-07-04 | Toshiba Corp | Inverse conduction gto rectifler |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62205661A (en) * | 1986-03-05 | 1987-09-10 | Mitsubishi Electric Corp | Manufacture of reverse conducting gto |
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