JPS5812454Y2 - Two-member connection structure - Google Patents
Two-member connection structureInfo
- Publication number
- JPS5812454Y2 JPS5812454Y2 JP1977047017U JP4701777U JPS5812454Y2 JP S5812454 Y2 JPS5812454 Y2 JP S5812454Y2 JP 1977047017 U JP1977047017 U JP 1977047017U JP 4701777 U JP4701777 U JP 4701777U JP S5812454 Y2 JPS5812454 Y2 JP S5812454Y2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- heat sink
- plating layer
- tin plating
- pieces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【考案の詳細な説明】
本案は２部材の接続構体に関し、特に樹脂モールド型半
導体装置における放熱板とリードとの接続構造の改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a connection structure for two members, and particularly relates to an improvement in the connection structure between a heat sink and a lead in a resin molded semiconductor device.
一般に半導体装置は例えば第１図〜第３図に示すように
熱伝導性良好なる金属部材よりなる放熱板Ａにリード片
ｂ１〜ｂ４よりなるリードＢを、リード片ｂ１．ｂ４が
放熱板Ａに形成された突出部Ｃによってかしめ固定され
、かつリード片ｂ２．ｂ−ｓが放熱板Ａの上面に離隔位
置するように配設すると共に、放熱板Ａのほぼ中央部に
装着された半導体素子りの電極とリード片ｂ２．ｂ３と
を金属細線Ｅにて接続し、然る後、放熱板Ａ、リードＢ
の主要部分を樹脂材Ｆにてモールド被覆して構成されて
いる。Generally, in a semiconductor device, as shown in FIGS. 1 to 3, for example, a heat dissipation plate A made of a metal member with good thermal conductivity is provided with leads B made of lead pieces b1 to b4. b4 is caulked and fixed by a protrusion C formed on the heat sink A, and the lead piece b2. b-s are arranged so as to be spaced apart from each other on the upper surface of the heat sink A, and electrodes and lead pieces b2. Connect b3 with thin metal wire E, and then connect heat sink A and lead B.
It is constructed by mold-coating the main parts of the body with a resin material F.
ところで、リードＢにおけるリード片Ｂ、、ｂ、は放熱
板Ａに、それより延びる突出部Ｃをリード片ｂ１．ｂ４
の孔に挿入した後、突出部Ｃの頂部を圧潰することによ
ってかしめ固定されているのであるが、突出部Ｃはそれ
によるリード片す、、ｂ、のかしめ代が充分に得られる
ような大きな形状に設定することが困難であるために、
組立工程におけるリードＢへの外力の作用によってリー
ド片す、、ｂ４の放熱板Ａとの固着強度が低下し、がた
付きが生じたり、時にはリードＢより放熱板Ａが脱落し
たりする。By the way, the lead pieces B, , b in the lead B are attached to the heat sink A, and the protrusion C extending therefrom is attached to the lead piece b1. b4
After inserting into the hole, the top of the protrusion C is crimped and fixed by crushing the top of the protrusion C, but the protrusion C is large enough to provide sufficient caulking allowance for the lead pieces s, b, and b. Because it is difficult to set the shape,
Due to the action of external force on the lead B during the assembly process, the adhesion strength of the lead pieces b4 to the heat sink A decreases, causing rattling or sometimes causing the heat sink A to fall off from the lead B.
このようにリードＢにおけるリード片ｂ□、ｂ４と放熱
板Ａとの機械的接続状態が悪化すれば、当然、両者の電
気的接続性の信頼性も低下し、半導体装置としての特性
を充分に発揮し得なくなる。If the mechanical connection between lead pieces b□, b4 in lead B and heat sink A deteriorates as described above, the reliability of the electrical connection between them will naturally decrease, and the characteristics of the semiconductor device will not be fully maintained. You will no longer be able to perform.
従って、従来においては例えばリード片す、、ｂ４の放
熱板Ａへの突出部Ｃによるかしめ固定後に、突出部Ｃの
かしめ部分に溶融半田を被着したり、或いはリード片す
、、ｂ、と放熱板Ａとの衝合部間に小片状の半田部材を
介在させ、両者をがしめ固定後に加熱して半田付けした
りすることが試みられているが、放熱板Ａ、リードＢの
半田付は部に予め半田付けが容易なるような処理を施し
たり、或いはフラックスを用いたりしなければならない
ために、作業が複雑化し、作業性が低下するという欠点
がある。Therefore, in the past, for example, after the lead pieces, b4 are caulked and fixed to the heat dissipation plate A by the protruding parts C, molten solder is applied to the caulked parts of the protruding parts C, or the lead pieces, b4 are fixed. Attempts have been made to interpose a small piece of solder material between the abutting portions of the heat sink A and heat the solder after tightening and fixing the two, but the soldering of the heat sink A and lead B is difficult. Since the soldering part must be treated in advance to facilitate soldering or flux must be used, there are disadvantages in that the work is complicated and workability is reduced.
本案はこのような点に鑑み、第１及び第２の金属部材を
作業性を損なうことなく確実に機械的、電気的に接続し
うる２部材の接続構体を提供するもので、以下実施例に
ついて説明する。In view of these points, this proposal provides a two-member connection structure that can reliably connect the first and second metal members mechanically and electrically without impairing workability. explain.
第４図〜第６図において、１はほぼ板状の第１の金属部
材であって、図示例は銅などのように熱伝導性良好なる
金属部材よりなる半導体装置用の放熱板である。4 to 6, reference numeral 1 denotes a substantially plate-shaped first metal member, and the illustrated example is a heat sink for a semiconductor device made of a metal member with good thermal conductivity, such as copper.
２は放熱板１の上面１ａにおける両側部分に形成された
円柱状の突出部で、例えば放熱板１の裏面を円柱状のポ
ンチにて強く押圧することによって形成される。Reference numeral 2 denotes cylindrical protrusions formed on both sides of the upper surface 1a of the heat sink 1, and is formed, for example, by strongly pressing the back surface of the heat sink 1 with a cylindrical punch.
３は放熱板１の全表面に形成された錫メッキ層で、少く
とも上面１ａにおける突出部２を含む部分はその厚さが
５μ以上に設定されている。Reference numeral 3 denotes a tin plating layer formed on the entire surface of the heat sink 1, and the thickness of at least the portion of the upper surface 1a including the protrusion 2 is set to be 5 μm or more.
４はほぼ板状の第２の金属部材であって、図示例は複数
のリード片４、＋ ４２ ＋ ４ｓ ＋４４から構成さ
れたリードである。Reference numeral 4 denotes a second metal member having a substantially plate shape, and the illustrated example is a lead composed of a plurality of lead pieces 4, +42+4s+44.
５はリードにおけるリード片４．．４４に形成された段
違い部に放熱板１の突出部２に対向するように形成され
た孔である。5 is a lead piece 4 in the lead. ．． This is a hole formed in a stepped portion formed in 44 so as to face the protruding portion 2 of the heat sink 1 .
このリード４におけるリード片４０，４４の段違い部は
それの孔５に突出部２を挿入することによって放熱板１
の上面１ａに密着させた後、突出部２の頂部を圧潰する
ことによってかしめ固定されると共に、衝合部に介在さ
れた錫メッキ層３の融着によって電気的にも接続されて
おり、一方、リード片４□、４３は放熱板１に対して離
隔するように配設されている。The stepped portions of the lead pieces 40 and 44 in the lead 4 are formed by inserting the protruding portion 2 into the hole 5 of the lead 4, thereby forming the heat dissipation plate 1.
After being brought into close contact with the upper surface 1a, the top of the projection 2 is caulked and fixed by crushing it, and is also electrically connected by fusion of the tin plating layer 3 interposed in the abutting part. , the lead pieces 4□, 43 are arranged so as to be spaced apart from the heat sink 1.
このような放熱板１とリード４との機械的、電気的接続
は例えば次のようにして行われる。Such mechanical and electrical connection between the heat sink 1 and the leads 4 is performed, for example, as follows.
即ち、まず第７図に示すように放熱板１の上方にリード
４を位置させると共にリード片４□、４４の孔５に突出
部２を挿入する。That is, first, as shown in FIG. 7, the leads 4 are positioned above the heat sink 1, and the protrusions 2 are inserted into the holes 5 of the lead pieces 4□, 44.
そして第８図に示すように突出部２の頂部を圧潰するこ
とによってリード片４□、４４を放熱板１に機械的に固
定する。Then, as shown in FIG. 8, the lead pieces 4□, 44 are mechanically fixed to the heat sink 1 by crushing the top of the protrusion 2.
然る後、リード片４□、４４と放熱板１とを電極１０．
１０にて挾持し通電することによって錫メッキ層３を溶
融させリード片４□、４４の裏面に融着させて電気的接
続を完了する。After that, the lead pieces 4□, 44 and the heat sink 1 are connected to the electrode 10.
The tin plating layer 3 is melted and fused to the back surfaces of the lead pieces 4□ and 44 by holding them at 10 and applying electricity to complete the electrical connection.
尚、放熱板１の上面１ａにおける錫メッキ層３のリード
片４□、４４への螺着は通電加熱による他、雰囲気加熱
によって行うこともできる。Incidentally, the tin plating layer 3 on the upper surface 1a of the heat sink 1 can be screwed onto the lead pieces 4□, 44 not only by electrical heating but also by atmospheric heating.
６は放熱板１の上面１ａにおける中央部分に半田部材７
を用いて固着された半導体素子である。6 is a solder member 7 attached to the center portion of the upper surface 1a of the heat sink 1.
This is a semiconductor element fixed using
８は半導体素子６の電極とり−ド４におけるリード片４
□、４３の端部とを接続する金属細線である。8 is a lead piece 4 in the electrode lead 4 of the semiconductor element 6
This is a thin metal wire that connects the ends of □ and 43.
９は放熱板１、リード４の主要部分を被覆する樹脂材で
、例えばモールド法によって外装されている。Reference numeral 9 denotes a resin material that covers the main parts of the heat sink 1 and the leads 4, and is covered by a molding method, for example.
このようにリード４におけるリード片４□、４４は放熱
板１に、それの表面に形成された錫メッキ層３によって
融着されているので、電気的接続性を良好に保つことが
できる上、突出部２のかしめ固定と相俟って機械的強度
をも改善できる。In this way, the lead pieces 4□, 44 in the lead 4 are fused to the heat sink 1 by the tin plating layer 3 formed on the surface thereof, so that good electrical connectivity can be maintained, and In combination with caulking and fixing the protrusion 2, mechanical strength can also be improved.
このために、組立工程において、放熱板１が、リード４
におけるリード片４．４４より脱落したり、或いはがた
つきが生じたりすることはなく、半導体装置としての充
分の信頼性を確実できる。For this reason, in the assembly process, the heat sink 1 is
The lead piece 4.44 will not fall off or shake, and sufficient reliability as a semiconductor device can be ensured.
又、リード片４□、４４と放熱板１とはその衝合部に介
在された錫メッキ層３によって融着するものであるから
、従来のように衝合部に小片状の半田部材を介在させた
りする必要がないために、作業性を著しく改善できる上
、特別の半田部材を用いないので、コストを低減できる
。Furthermore, since the lead pieces 4□, 44 and the heat sink 1 are fused together by the tin plating layer 3 interposed at the abutting portions, it is not necessary to apply a small piece of solder material to the abutting portions as in the past. Since there is no need to intervene, workability can be significantly improved, and since no special soldering member is used, costs can be reduced.
又、錫メッキ層３の厚みは５μ以上に設定されているの
で、放熱板１とリード片４．．４４とは確実に融着され
て良好な電気的接続状態が得られる。Furthermore, since the thickness of the tin plating layer 3 is set to 5μ or more, the heat dissipation plate 1 and the lead piece 4. ．． 44 is reliably fused to provide a good electrical connection.
しかし乍ら、その厚みが５μ未満になると、リード片ど
放熱板１とはそれらの衝合部に介在される錫の量が少な
くなるために衝合郡全体に互って良好なる接続状態が得
られなくなる。However, when the thickness becomes less than 5 μm, the amount of tin interposed between the lead piece and the heat sink 1 is reduced, so that a good connection condition between the entire abutment group is not achieved. You won't be able to get it.
仮に接続ができたとしても、充分の機械的強度が得られ
ないために組立工程における振動、機械的衝撃の付与に
よって衝合部に剥離が生じ易くなり、半導体装置の特性
、信頼性が損なわれる。Even if a connection is made, sufficient mechanical strength cannot be obtained, and vibrations and mechanical shocks during the assembly process can easily cause delamination at the contact area, impairing the characteristics and reliability of the semiconductor device. .
第９図は本案の他の実施例を示すもので、放熱板１の両
側部分にはリード４におけるリード片４１．４４が突出
部２によってかしめ固定されており、そのリード片４□
、４４の全表面には錫メッキ層１１が形成されている。FIG. 9 shows another embodiment of the present invention, in which lead pieces 41 and 44 of the lead 4 are caulked and fixed to both sides of the heat dissipation plate 1 by protrusions 2, and the lead pieces 4 □
, 44 have a tin plating layer 11 formed thereon.
リード片４１．４４の放熱材１の上面１ａと対向する部
分における錫メッキ層１１はその厚みが５μ以上に設定
されており、例えば通電加熱によって放熱板１に融着さ
れている。The tin plating layer 11 in the portion of the lead piece 41, 44 facing the upper surface 1a of the heat dissipation material 1 is set to have a thickness of 5 μm or more, and is fused to the heat dissipation plate 1 by, for example, electrical heating.
尚、放熱板１の表面にはニッケルメッキ層などを形成し
ておくこともできる。Note that a nickel plating layer or the like may be formed on the surface of the heat sink 1.
この実施例によれば、リード４に錫メッキ層１１を形成
しているために、錫の使用量が上記実施例に比し節約で
き、コストを有効に低減できる。According to this embodiment, since the tin plating layer 11 is formed on the lead 4, the amount of tin used can be reduced compared to the above embodiment, and costs can be effectively reduced.
第１０図〜第１１図は本案のさらに異なった実施例を示
すもので、リード片１２．．１２□、１２３よりなるリ
ード１２のうち、リード片１２□の端部はＬ形に屈曲さ
れており、この屈曲部１３は放熱板１に形成された切欠
部１４に配設され切欠部１４と両側壁部の肉１５を屈曲
部１３上に移動させることによってかしめ固定されてい
る。10 and 11 show further different embodiments of the present invention, in which lead pieces 12. ．． Among the leads 12 made up of 12 □ and 123, the end of the lead piece 12 □ is bent into an L shape, and this bent part 13 is disposed in a notch 14 formed in the heat sink 1 and is connected to the notch 14. It is caulked and fixed by moving the flesh 15 of both side wall parts onto the bent part 13.
尚、リード１２０表面には錫メッキ層１１が形成されて
いるので、折曲部１３と切欠部１４とは錫メッキ層１１
の溶融処理によって融着されている。Incidentally, since the tin plating layer 11 is formed on the surface of the lead 120, the bent portion 13 and the notch portion 14 are formed on the tin plating layer 11.
It is fused by melting process.
又、リード片１２□、１２３の端部には半導体素子６の
電極より延びる金属細線８が接続されている。Further, thin metal wires 8 extending from the electrodes of the semiconductor element 6 are connected to the ends of the lead pieces 12□ and 123.
尚、本案は何ら上記実施例にのみ制約されることなく、
例えば錫メッキ層は両方の金属部材の衝合面に形成する
こともできるし、又、その厚みは両錫メッキ層によって
５μ以上に設定することもできる。Note that the present invention is not limited to the above embodiments in any way,
For example, the tin plating layer can be formed on the abutting surfaces of both metal members, and the thickness can be set to 5 microns or more depending on both tin plating layers.
以上のように本案によれば、第１及び第２の金属部材の
、いづれか一方の衝合面に、曲いは双方の衝合面に、厚
さが５μ以上となる錫メッキ層を形成して固定させるの
で、第１及び第２の金属部材を作業性を損なうことなく
確実に機械的、電気的に接続することができるし、特別
の半田部材を必要としないためにコスト面においても有
利になるという優れた効果が得られる。As described above, according to the present invention, a tin plating layer having a thickness of 5 μm or more is formed on the abutting surfaces of either one of the first and second metal members, or both abutting surfaces of the first and second metal members. Since the first and second metal members can be fixed together by the metal members, the first and second metal members can be reliably connected mechanically and electrically without impairing workability, and since no special soldering members are required, it is advantageous in terms of cost. You can get the excellent effect of
第１図は従来例の要部破断平面図、第２図は第１図のＩ
−Ｉ断面図、第３図は第１図のＩＩ −ＩＩ断面図、第
４図は本案の一実施例を示す要部破断平面図、第５図は
第４図のＩＩＩ−ＩＩＩ断面図、第６図は第４図のＩＶ
−ＩＶ断面図、第７図は本考案に係る第１の金属部材（
放熱板）と第２の金属部材（リード）との組立前の状態
を示す斜視図、第８図は本案に係る第１及び第２の金属
部材の電気的接続方法を説明するための側断面図、第９
図は本案の他の実施例を示す側断面図、第１０図は本案
のさらに異った実施例を示す要部破断側面図、第１１図
は第１０図の■−■断面図である。
図中、１は第１の金属部材、３，１１は錫メッキ層、４
．１２は第２の金属部材である。Figure 1 is a cutaway plan view of the main parts of the conventional example, and Figure 2 is the I of Figure 1.
-I sectional view, FIG. 3 is a II-II sectional view in FIG. Figure 6 is the IV of Figure 4.
-IV sectional view, FIG. 7 is the first metal member (
A perspective view showing a state before assembly of a heat dissipation plate) and a second metal member (lead), and FIG. 8 is a side cross section for explaining the electrical connection method of the first and second metal members according to the present invention. Figure, No. 9
The figure is a sectional side view showing another embodiment of the present invention, FIG. 10 is a side view with a main part broken away showing a further different embodiment of the present invention, and FIG. In the figure, 1 is the first metal member, 3 and 11 are tin-plated layers, and 4
．． 12 is a second metal member.
Claims (1)
固定し、衝合部を融着させるものにおいて、前記第１及
び第２の金属部材の、いづれか一方の衝合面、或いは双
方の衝合面に、厚さが５μ以上となる錫メッキ層を形成
したことを特徴とする２部材の接続構体。In the device in which the first and 29th metal members in the shape of a hollow plate are abutted and mechanically fixed, and the abutment portions are fused, the abutment surface of any one of the first and second metal members. , or a connection structure of two members, characterized in that a tin plating layer having a thickness of 5 μm or more is formed on both abutting surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1977047017U JPS5812454Y2 (en) | 1977-04-13 | 1977-04-13 | Two-member connection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1977047017U JPS5812454Y2 (en) | 1977-04-13 | 1977-04-13 | Two-member connection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53140368U JPS53140368U (en) | 1978-11-06 |
| JPS5812454Y2 true JPS5812454Y2 (en) | 1983-03-09 |
Family
ID=28928175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1977047017U Expired JPS5812454Y2 (en) | 1977-04-13 | 1977-04-13 | Two-member connection structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812454Y2 (en) |
-
1977
- 1977-04-13 JP JP1977047017U patent/JPS5812454Y2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53140368U (en) | 1978-11-06 |
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