JPS58121829A - Driving circuit - Google Patents

Driving circuit

Info

Publication number
JPS58121829A
JPS58121829A JP57003383A JP338382A JPS58121829A JP S58121829 A JPS58121829 A JP S58121829A JP 57003383 A JP57003383 A JP 57003383A JP 338382 A JP338382 A JP 338382A JP S58121829 A JPS58121829 A JP S58121829A
Authority
JP
Japan
Prior art keywords
circuit
field effect
signal
input
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57003383A
Other languages
Japanese (ja)
Inventor
Nobuaki Ieda
家田 信明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57003383A priority Critical patent/JPS58121829A/en
Publication of JPS58121829A publication Critical patent/JPS58121829A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008Arrangements for reducing power consumption
    • H03K19/0013Arrangements for reducing power consumption in field effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To drive a large capacitive load with a very low power consumption in high speed, without a DC current circuit from a power supply to ground at the output stage of a drive circuit, by setting a phase difference between input signals to two MOS transistors(TRs) of the drive circuit. CONSTITUTION:VIN is an input signal and VO is an output signal, Q1 is a P channel MOS TR and Q2 is an N channel MOS TR. A and B are signal generating circuits driving MOS TRsQ1, Q2 respectively. The phase is set so that the low potential state of the output signal B of the circuit B includes the low potential state of the output signal A of the circuit A. In setting the phase as shown in Fig. 4, the MOS TRsQ1, Q2 are not conducted at the same time, the drive circuit is limited to charging or discharge to the load capacitor for an arbitrary time.

Description

【発明の詳細な説明】 本発明は電界効果トランジスタ(以下MO8トランジス
タと略記する)を用いた集積回路中で使われる回路の一
部に関するもので、大きな容量性負荷を低電力で高速に
駆動できる駆動回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a part of a circuit used in an integrated circuit using a field effect transistor (hereinafter abbreviated as MO8 transistor), which can drive a large capacitive load at high speed with low power. This relates to a drive circuit.

従来CMO8回路で採用されていた駆動回路の一例を第
1図に示す。MOS )ランジスタQ1とQ2とよりな
る回路は反転増幅回路を、MOSトランジスタQ3・と
Q4からなる回路は駆動回路を構成する。
An example of a drive circuit conventionally employed in a CMO8 circuit is shown in FIG. A circuit consisting of MOS transistors Q1 and Q2 constitutes an inverting amplifier circuit, and a circuit consisting of MOS transistors Q3 and Q4 constitutes a drive circuit.

なお、Q、とQ3はPチャネルMO8)ランジスタであ
り、Q2 (!: Q4はNチャネルMOSトランジス
タである。出力V。に容量性の大きな負荷が接続された
場合、それを高速に駆動するためにMOS )ランジス
タQ3とQ4のチャネル幅も大きくなり反転増幅回路の
負荷容量も犬となる。このため反転増幅回路の出力信−
q■やも緩慢力動作をすることになる。
Note that Q and Q3 are P-channel MO8) transistors, and Q2 (!: Q4 is an N-channel MOS transistor.When a large capacitive load is connected to the output V, this is used to drive it at high speed. (MOS) The channel width of transistors Q3 and Q4 also increases, and the load capacitance of the inverting amplifier circuit also increases. Therefore, the output signal of the inverting amplifier circuit
q■ Yamo will also perform slow force movements.

これらの動作波形を第2図に示す。Vylが緩慢な動作
をすると第2図に示したようにMOSトランジスタQ3
とQ4が同時に導通状態となり電源vDDから7−スに
向けて無用の大電流が流れる。MOS )ランンスタQ
3とQ4の利得定数が大きいのでこの電流のために消費
される電力は全体の消費電力の大部分を占めかねない。
These operating waveforms are shown in FIG. When Vyl operates slowly, MOS transistor Q3
and Q4 become conductive at the same time, and an unnecessary large current flows from the power supply vDD to the 7-s. MOS) Runstar Q
Since the gain constants of Q3 and Q4 are large, the power dissipated due to this current can account for a large portion of the total power dissipation.

従ってこの種の駆動回路を用いた場合には集積回路の性
能向上及び大容量化に対して重要な問題となる。
Therefore, when this type of drive circuit is used, it becomes an important problem for improving the performance and increasing the capacity of integrated circuits.

本発明は駆動回路の2つのMOS Lランジスタへの人
力信号に位相差を設定することにより、これらの問題点
を除去するようにしたことを特徴とするもので、その目
的は低消費電力で高性能を有する集積回路を実現するこ
とにある。
The present invention is characterized by eliminating these problems by setting a phase difference between the human input signals to the two MOS L transistors of the drive circuit. The objective is to realize integrated circuits with high performance.

第3図は本発明の実施例で第4図はその動作波形を示す
。vINは入力信号、voは出力信号であり、QlはP
チャネルMO8)ランジスタ、Q2はNチャ不7しMO
Sトランジスタである。A、Bは各々MOSトランジス
タQ1とQ2を駆動する信号発生回路である。第4図に
示すように8回路の出力信号Bの低電位状態が、A回路
の出力信号Aの低電位状態を包含するように位相設定さ
れている。第4図のように位相設定されるとMOS )
ランジスタQ1と。
FIG. 3 shows an embodiment of the present invention, and FIG. 4 shows its operating waveforms. vIN is the input signal, vo is the output signal, and Ql is P
Channel MO8) transistor, Q2 is N channel MO7)
It is an S transistor. A and B are signal generation circuits that drive MOS transistors Q1 and Q2, respectively. As shown in FIG. 4, the phases are set so that the low potential state of the output signal B of the eight circuits includes the low potential state of the output signal A of the A circuit. When the phase is set as shown in Figure 4, the MOS
With Ranjistor Q1.

Q2が同時に導通することはなくなり駆動回路は。Q2 is no longer conductive at the same time, and the drive circuit.

任意の時間を選べば負荷容量に対して充電をするか放電
をするかのいずれか一方に限定される0従って、前述の
問題は全くなくなり低消費電力で高性能な駆動回路を実
現することができる。
If you choose an arbitrary time, you are limited to either charging or discharging the load capacity. Therefore, the above-mentioned problem is completely eliminated, making it possible to realize a high-performance drive circuit with low power consumption. can.

第5図は本発明の別の実施例で、A回路としてインバー
タを用い8回路として遅延回路とNOR回路を用いたも
ので第4図の位相設定を具体的に可能とする回路である
。即ち、A回路はインバータIにより、入力信号v1N
を反転するとともに、入力信号波形の前縁(この場合、
後縁も)を若干橡遅延させる(第3図Aの波形参照)。
FIG. 5 shows another embodiment of the present invention, in which an inverter is used as the A circuit, a delay circuit and a NOR circuit are used as the eight circuits, and the phase setting shown in FIG. 4 is specifically made possible. That is, the A circuit receives the input signal v1N by the inverter I.
as well as the leading edge of the input signal waveform (in this case,
The trailing edge (also the trailing edge) is slightly delayed (see the waveform in FIG. 3A).

また8回路は、入力信号v1Nの波形をNOR回路によ
って反転させるとともに)波形の前縁はほぼ時間的遅れ
なしに出力させるが、波形の後縁は遅延回路りにより遅
延して出力させる(第3図波形B参照)。A回路のイン
バータIによる遅延量よりも8回路の遅延回路りの遅延
量を若干大きく設定することにより、第3図に示すよう
に8回路の出力信号Bの低電位状態がA回路の出力信号
Aの低電位状態を包含するように位相設定され、MOS
)ランジスタQ、とQ2が同時に導通することはない。
In addition, in the 8th circuit, the waveform of the input signal v1N is inverted by the NOR circuit, and the leading edge of the waveform is output with almost no time delay, but the trailing edge of the waveform is delayed and outputted by the delay circuit (3rd (See waveform B in the figure). By setting the delay amount of the eight delay circuits slightly larger than the delay amount caused by the inverter I of the A circuit, the low potential state of the output signal B of the eight circuits is changed to the output signal of the A circuit as shown in FIG. The phase is set to encompass the low potential state of A, and the MOS
) Transistors Q and Q2 are never conductive at the same time.

第6図は本発明の信号発生回路のさらに別の実施例でA
回路としてインバータを、8回路としてインバータとN
OR回路を用い8回路の入力信号としてA回路の出力信
号も使ったものである。このようにA回路と8回路の入
力信・号としては)単に入力信号v1Nに制限されるこ
とはなくAIR回路の内部信号や出力信号を用いて構成
しても良い。
FIG. 6 shows still another embodiment of the signal generation circuit of the present invention.
Inverter as a circuit, inverter and N as 8 circuits
An OR circuit is used and the output signal of circuit A is also used as an input signal for eight circuits. In this way, the input signals of the A circuit and the 8 circuit are not limited to the input signal v1N, but may be configured using internal signals or output signals of the AIR circuit.

本発明の上記実施例においては、正論理について述べて
きたが、負論理の場合についても同様のことが言える。
In the above embodiments of the present invention, positive logic has been described, but the same can be said for negative logic.

以上説明したように本発明は、駆動回路の出力段で電源
からアースへ直流的な電流回路を生じさせないので、容
量性の大きな負荷を極めて低消費電力で高速に駆動でき
るという利点がある。
As explained above, the present invention has the advantage that a large capacitive load can be driven at high speed with extremely low power consumption because no direct current circuit is generated from the power supply to the ground at the output stage of the drive circuit.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の駆動回路を説明するだめの図、第2図は
第1図の各部ノードの電位とI、の波形、第3図は本発
明の実施例、第4図は第3図の各ノードの電位波形、第
5図は本発明におけるA信号及びB信号を生成する信号
発生回路の具体例を示す図、第6図は本発明における信
号発生回路の他の具体例を示す図である。 vIN ・・・・・・・・・入力信号、v。・・・・・
・・・・出力信号、vDD  ・・・・・・・・・電源
、■、・・・・・・・・・電流、 A・・・・・・・・
・A信号発生回路、 B・・・・・・・・・B信号発生
回路、 ■ ・・・・・・・・・インバータ、 D・・
・・・・・・・遅延回路。 第1図 第2図 第3図 第4図
FIG. 1 is a diagram for explaining a conventional drive circuit, FIG. 2 is a waveform of the potential and I of each node in FIG. 1, FIG. 3 is an embodiment of the present invention, and FIG. 5 is a diagram showing a specific example of a signal generating circuit that generates the A signal and B signal in the present invention, and FIG. 6 is a diagram showing another specific example of the signal generating circuit in the present invention. It is. vIN Input signal, v.・・・・・・
・・・・・・Output signal, vDD ・・・・・・・Power supply, ■, ・・・・・・・Current, A・・・・・・・・・
・A signal generation circuit, B...B signal generation circuit, ■...Inverter, D...
...Delay circuit. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 電界効果トランジスタを用いた集積回路において、Nま
たはPの一方のチャネル形を持つ第1の電界効果トラン
ジスタのソースを第1の電源に、トンインを出力端子並
びに他方のチャネル形を持つ第2の電界効果トランジス
タのドレイ/に接続し、第2の電界効果トランジスタの
ソースを第2の電源に接続し、第1の電界効果トランジ
スタのシ゛−トを第1の信号発生回路の出力端子に接続
し、第2のトランジスタのゲートを第2の信号発生回路
の出力端子に接続し、第1および第2の信号発゛IJ2
回路の人力を入力信号端子に接続した駆動回路であって
、前記第1の信号発生回路は前記入力信号端子からの入
力信号波形の前縁部を遅延させる要素を有し、前記第2
の信号発生回路は入力信号の後縁部を前記第1の信号発
生回路の遅延量よりもやや大きな遅延量で遅延させる要
素を有し、それにより第1および第2の電界効果トラン
ジスタが同時に導通する期間のないよう、それらの電界
効果トランジスタへの入力信号に位相差を設定したこと
を特徴とする駆動回路。
In an integrated circuit using field effect transistors, the source of a first field effect transistor having one channel type of N or P is used as a first power supply, and the input is connected to an output terminal and a second electric field having the other channel type. the source of the second field effect transistor to the second power supply, and the seat of the first field effect transistor to the output terminal of the first signal generating circuit; The gate of the second transistor is connected to the output terminal of the second signal generation circuit, and the first and second signal generation circuits IJ2
A driving circuit in which a human power of the circuit is connected to an input signal terminal, wherein the first signal generation circuit has an element for delaying a leading edge of an input signal waveform from the input signal terminal, and the second
The signal generation circuit has an element that delays the trailing edge of the input signal by a delay amount slightly larger than the delay amount of the first signal generation circuit, so that the first and second field effect transistors are simultaneously conductive. A drive circuit characterized in that a phase difference is set in the input signals to the field effect transistors so that there is no period during which the field effect transistors are input.
JP57003383A 1982-01-14 1982-01-14 Driving circuit Pending JPS58121829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003383A JPS58121829A (en) 1982-01-14 1982-01-14 Driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003383A JPS58121829A (en) 1982-01-14 1982-01-14 Driving circuit

Publications (1)

Publication Number Publication Date
JPS58121829A true JPS58121829A (en) 1983-07-20

Family

ID=11555828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003383A Pending JPS58121829A (en) 1982-01-14 1982-01-14 Driving circuit

Country Status (1)

Country Link
JP (1) JPS58121829A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127438A (en) * 1984-11-26 1986-06-14 昭和電工株式会社 Can-shaped vessel cover
US4825102A (en) * 1986-09-11 1989-04-25 Matsushita Electric Industrial Co., Ltd. MOS FET drive circuit providing protection against transient voltage breakdown

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127438A (en) * 1984-11-26 1986-06-14 昭和電工株式会社 Can-shaped vessel cover
US4825102A (en) * 1986-09-11 1989-04-25 Matsushita Electric Industrial Co., Ltd. MOS FET drive circuit providing protection against transient voltage breakdown

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