JPS58120321A - Input circuit - Google Patents

Input circuit

Info

Publication number
JPS58120321A
JPS58120321A JP57002982A JP298282A JPS58120321A JP S58120321 A JPS58120321 A JP S58120321A JP 57002982 A JP57002982 A JP 57002982A JP 298282 A JP298282 A JP 298282A JP S58120321 A JPS58120321 A JP S58120321A
Authority
JP
Japan
Prior art keywords
pull
terminal
gate
input
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57002982A
Other languages
Japanese (ja)
Inventor
Yoshio Kachi
加地 善男
Yoshinari Kitamura
北村 嘉成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57002982A priority Critical patent/JPS58120321A/en
Publication of JPS58120321A publication Critical patent/JPS58120321A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element

Abstract

PURPOSE:To ensure a stable operation of an input circuit as a pull-up resistance, by connecting the drain of a p type MOS transistor having its source and gate connected to the gate and the output terminal of a CMOS type inverter respectively to a power supply. CONSTITUTION:An input terminal IN is connected to the gate of an input MOS inverter IV consisting of a p type MOS transistor TR3 and an n type MOSTR4 via a protecting resistance 1 as well as to the source of a p type MOSTR2. The gate and the drain of the TR2 are connected to an output terminal O of the IV and a power supply VDD, respectively. When the terminal IN is opened, the potential is unsteady at a gate node 5 of the IV. However, the potential is gradually charged by the leakage current of the TR2. When this potential exceeds the threshold voltage of the IV, an output O is set at an L level. Then the TR2 is turned on to complete the pull-up function of the terminal IN. When the terminal IN is fixed at a low level, the potential of the node 5 is lowered to less than the threshold voltage of the IV. Thus the terminal O is set at an H level, and the TR2 is turned off respectively. Then only the leakage current of the TR2 flows to the terminal IN from the power supply. As a result, the power consumption is reduced.

Description

【発明の詳細な説明】 本発明性絶縁ゲート電界効果トランジスタ(以下M08
トランジスタとiう)からなる入力回路に関し、特に入
力端子を開放した時にその電圧レベルを高レベル又は低
レベルに固定し得る、いわゆるプルアップ父性プルダウ
ン機能を有する入力回路に関する。
DETAILED DESCRIPTION OF THE INVENTION Inventive insulated gate field effect transistor (hereinafter M08
The present invention relates to an input circuit consisting of a transistor (i), and particularly to an input circuit having a so-called pull-up paternal pull-down function that can fix the voltage level at a high or low level when an input terminal is opened.

従来からMO8集積回路におけるプルアップ抵抗又はプ
ルダウン抵抗はMO8抵抗で構成されて−る。前記プル
アップ又はプルダウン抵抗は入力端子を開放した時の人
力レベルを訣める為のものであるが、該入力端子を開放
時に決まる電位とは逆の電位に同定する場合もめる。こ
の様な場合は、咳入力端子を開放するか又は固定電位に
接続するかで前記集積回路の機能にパリエージ■ンを持
たせる時に起こる。
Traditionally, pull-up or pull-down resistors in MO8 integrated circuits are constructed from MO8 resistors. The pull-up or pull-down resistor is used to increase the level of human effort required when the input terminal is opened, but it may also be possible to identify the input terminal to a potential opposite to the potential determined when the input terminal is opened. Such a case occurs when the function of the integrated circuit is provided with parity by leaving the cough input terminal open or connecting it to a fixed potential.

この様に該入力端子を、開放時に決まる電位とは逆の電
位に固定した場合には、該プルアップ又If−1−jk
ダウン抵抗を流れる電流による消費電流の増加が問題に
なる。
In this way, when the input terminal is fixed at a potential opposite to the potential determined when it is open, the pull-up or If-1-jk
The problem is an increase in current consumption due to the current flowing through the down resistor.

例えばプルアップ抵抗付きの入力端子を接地電位(以下
GNI)という)に接続した場合、電源から前記プルア
ップ抵抗を通してGNDに電流が流れる。そして入力ゲ
ートの入力レベルは前記プルアップ抵抗と入力保護抵抗
との分割比で決まる。
For example, when an input terminal with a pull-up resistor is connected to a ground potential (hereinafter referred to as GNI), a current flows from the power source to GND through the pull-up resistor. The input level of the input gate is determined by the division ratio between the pull-up resistor and the input protection resistor.

ゆえに、この人カブルアツブ抵抗は大きければ太き一程
消費電流は減シ入カレベルも安定する。一方該入力端子
を開放した場合は前記プルアップ抵抗が余り大きいと、
プルアップとしての効果がうすれ、外米ノイズに対して
弱くなる。よってプルアップ抵抗を無暗に大きくする事
は出来ない。
Therefore, the larger the resistor is, the more the current consumption decreases and the input power level becomes more stable. On the other hand, if the input terminal is opened and the pull-up resistor is too large,
The effect as a pull-up becomes weaker and it becomes weaker against foreign noise. Therefore, the pull-up resistor cannot be increased arbitrarily.

本発明は、プルアップ(又はプルダウン)付きの入力端
子をGND(又は電源)レベルに固定する時には前記プ
ルアップ(又はプルダウン)抵抗用のMOS)ランジス
タを遮断(以下OFI?という)させる事により、消費
電流が少なくかつ該入力端子を開放する時には前記プル
アップ(又はプルダウン)抵抗用MO8)ランジスタを
導通(以下ONという)させる事によシ十分低いプルア
ップ(又はプルダウン)抵抗を持つ入力回路を提供する
事にある。
In the present invention, when an input terminal with a pull-up (or pull-down) is fixed to the GND (or power supply) level, the MOS transistor for the pull-up (or pull-down) resistor is cut off (hereinafter referred to as OFI?). An input circuit with a sufficiently low current consumption and a sufficiently low pull-up (or pull-down) resistance can be created by making the pull-up (or pull-down) resistor MO8 transistor conductive (hereinafter referred to as ON) when the input terminal is opened. It is about providing.

本発明は一対のNチャンネル及びPチャンネルMO8)
2ンジスタで構成される相補型MO8インバータと該イ
ンバータのゲート電極と電源(又はGND)にそれぞれ
ドレイン及びソース電極が接続されたPチャンネル(又
はNチャンネル)MOS)ランジスタのゲート電極は前
記相補型MO&インバータの出力に接続されてなる事を
特徴とする入力回路である。
The present invention provides a pair of N-channel and P-channel MO8)
A complementary MO8 inverter consisting of two transistors and a P-channel (or N-channel) MOS transistor whose drain and source electrodes are connected to the gate electrode of the inverter and the power supply (or GND), respectively, have their gate electrodes connected to the complementary MO& This is an input circuit characterized by being connected to the output of an inverter.

次に本発明をその実施例に従い、図面を用いて呼細に説
明する。
Next, the present invention will be explained in detail according to embodiments using the drawings.

第1図(alは本発明の一実施例を示す回路接続図で、
1は入力像1i&抗、2はプルアップ用PチャンネルM
OSトランジスタ、3,4はそれぞれ入カインパータを
構成するPチャンネル及びNチャンネルトランジスタを
狭わしている。今入力端子INを開放し死時を考えると
、最初入力インバータのゲート電極(節点5)の電位は
不定であるが、Pチャンネルトランジスタ2の漏洩電流
によりて徐々に高レベルに充電される。このレベルが一
旦入カインバータの一値電圧を越えると、前記インバー
タの出力Oは低レベルに反転し、その出力Oにゲート電
極が接続されて−るPチャンネルトランジスタ2がON
状態となる。以上に述べた一連の動作によって入力端子
のプルアップ機能が完了する。次に入力端子INを低レ
ベルに固定した時を考える。この場合節点5の電位はプ
ルアップ抵抗と入力保護抵抗の分割比で決るが、通常入
力保鏝抵抗の値は1〜数にΩであるので、Pチャンネル
トランジスタ2のON抵抗を10数にΩに設定すれば節
点5の電位は入力インバータの閾値電圧以下になゐ。こ
うする事によシ入カインパータの出力Oは高レベルに反
転し、プルアップ用Pチャンネルトランジスタ2をOF
Fさせる。以上に述べた様に、入力端子INを低レベル
に固定した時にはプルアップ用Pチャンネルトランジス
タ2がOFFとなり、電源から入力端子INに流れ出る
電aは該Pチャンネルトランジスタ2の漏洩電流だけと
なプ、従来のプルアップ付き人力(ロ)路の場合と比べ
て著し一消憤電流の改善が図れる。
FIG. 1 (al is a circuit connection diagram showing one embodiment of the present invention,
1 is input image 1i & anti, 2 is P channel M for pull-up
OS transistors 3 and 4 respectively narrow the P-channel and N-channel transistors forming the input inverter. Now, when the input terminal IN is opened and the time of death is considered, the potential of the gate electrode (node 5) of the input inverter is initially unstable, but it is gradually charged to a high level by the leakage current of the P-channel transistor 2. Once this level exceeds the single value voltage of the input inverter, the output O of the inverter is inverted to a low level, and the P-channel transistor 2 whose gate electrode is connected to the output O is turned on.
state. The series of operations described above completes the pull-up function of the input terminal. Next, consider the case where the input terminal IN is fixed at a low level. In this case, the potential of node 5 is determined by the division ratio of the pull-up resistor and the input protection resistor, but since the value of the input protection resistor is usually 1 to several Ω, the ON resistance of P-channel transistor 2 is set to 10 Ω. If set to , the potential of node 5 will be below the threshold voltage of the input inverter. By doing this, the output O of the input inverter is inverted to high level, and the pull-up P-channel transistor 2 is turned off.
F. As mentioned above, when the input terminal IN is fixed at a low level, the pull-up P-channel transistor 2 is turned off, and the current a flowing from the power supply to the input terminal IN is only the leakage current of the P-channel transistor 2. , compared to the conventional manually operated path with pull-up, the extinguishing current can be significantly improved.

第2図(a)は本発明の他の実施例を示す回路接続図で
、プルアップ用Pチャンネルトランジスタ2に並列に尚
抵抗7を接続したものである。この抵抗は多結晶シリコ
ン、拡散層又はPウェル等を利用して実現出来ることは
改めて説明するまでもないO 第3図(a)は本発明の良に他の実施例を示す回路接続
図で、ゲートをGNDに接続したPチャンネルMO8)
ランジスタ9で前記他の実施例における高抵抗を実現し
た例で6る。第2図(a)及び第3図(1)に示した例
において入力端子を開放し九場合は、この高抵抗によっ
てインバータが急速に低レベルに反転し、プルアップ動
作の速度を速める事が出来る。
FIG. 2(a) is a circuit connection diagram showing another embodiment of the present invention, in which a resistor 7 is connected in parallel to the P-channel transistor 2 for pull-up. It goes without saying that this resistance can be realized using polycrystalline silicon, a diffusion layer, a P-well, etc. FIG. 3(a) is a circuit connection diagram showing another embodiment of the present invention. , P-channel MO8 with gate connected to GND)
6 is an example in which the transistor 9 realizes the high resistance in the other embodiments. In the examples shown in Figures 2(a) and 3(1), if the input terminals are left open, this high resistance causes the inverter to quickly invert to a low level, increasing the speed of the pull-up operation. I can do it.

以上主にプルアップについて説明して来たが、プルダウ
ンの場合にも同じ考え方が適用出来る。
The above explanation has mainly been about pull-ups, but the same idea can be applied to pull-downs as well.

第1図(b)はプルダウン抵抗の場合を、第2図(b)
及び第3図(b)はそれぞれプルダウン抵抗用Nチャン
ネルMO8)ランジスタに並列にスピードアップ用高抵
抗及びスピードアップ用NチャンネルMO8トランジス
タを接続した場合を示している。詳細説明は省略するが
、前記プルアップ抵抗の場合に準じることは明らかでお
る〇 本発明は以上に説明したように入力開放時には安定なプ
ルアップ(又はプルダウン)抵抗として働き、入力端子
を高又は低レベルに固定した時には、従来のプルアップ
(又はプルダウン)付き人力回路に比べて著しく消費電
流を減じる効果があるO
Figure 1(b) shows the case of a pull-down resistor, and Figure 2(b) shows the case of a pull-down resistor.
and FIG. 3(b) respectively show the case where a high resistance for speeding up and an N-channel MO8 transistor for speeding up are connected in parallel to the N-channel MO8 transistor for pull-down resistor. Although a detailed explanation will be omitted, it is clear that the same applies to the case of the pull-up resistor as described above.As explained above, the present invention works as a stable pull-up (or pull-down) resistor when the input is open, and pulls the input terminal to a high or low level. When fixed at a low level, it has the effect of significantly reducing current consumption compared to conventional human-powered circuits with pull-ups (or pull-downs).

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)、第2図(a)及び嬉3図(a)はそれぞ
れプルアップ付き人力回路につ−ての本発明の実施例を
示す回路接続図、第1図(b) 、 H,2図(b)及
び第3図(b)はそれぞれプルダウン付き入力回路の場
合の実施例を示す回路接続図である。 1・・・・・・入力保−抵抗、2・・・・・・プルアッ
プ用PチャンネルMO8)ランジスタ、3,4・・・・
・・相補型MO8インバータを構成するPチャンネル及
びNチャンネルMO8)ランジスタ、5・・・・・・イ
ンノ<=りのゲート、6・・・・・・プルダウン用Nチ
ャンネルMO8)?/ジスタ、7,8・・・・・・スピ
ードアップ用抵抗、9・・・・・・スピードアップ用P
チャンネルMO8)うyジスタ、10・・・・・・スピ
ード°アップ用NチャンネルMO8)ランジスタ。 ((1) 第 (al 茅 (a) 寥 (b) 1図 2図 (b) 3図
Fig. 1(a), Fig. 2(a) and Fig. 3(a) are circuit connection diagrams showing an embodiment of the present invention regarding a human power circuit with pull-up, Fig. 1(b), FIG. 2(b) and FIG. 3(b) are circuit connection diagrams each showing an embodiment in the case of an input circuit with pull-down. 1... Input holding resistor, 2... P-channel MO8) transistor for pull-up, 3, 4...
...P-channel and N-channel MO8) transistors constituting a complementary MO8 inverter, 5...Inno<=ri gate, 6...N-channel MO8 for pull-down? / register, 7, 8...Resistance for speed-up, 9...P for speed-up
Channel MO8) Uy resistor, 10...N channel MO8) Ranister for speed up. ((1) Part (al) (a) (b) 1 Figure 2 Figure (b) 3 Figure

Claims (2)

【特許請求の範囲】[Claims] (1)一対のNチャンネル及びPチャンネルMO8トラ
ンジスタで構成される相補型MO8人力インバータとこ
のインバータのゲート電極と電源(又は接地電位)にそ
れぞれドレイン及びソース電極が接続されたP(又はN
)チャンネルMO8トランジスタを挿入し、前記P(又
はN)チャンネルMO8)ランジスタのゲート電極は前
記相補ff1MO8インバータの出力に接続されてなる
ことを特徴とする入力回路。
(1) A complementary MO8 human-powered inverter consisting of a pair of N-channel and P-channel MO8 transistors, and a P (or N
) An input circuit characterized in that a channel MO8 transistor is inserted, the gate electrode of the P (or N) channel MO8 transistor being connected to the output of the complementary ff1 MO8 inverter.
(2)一対のNチャンネル及びPチャンネルMOSトラ
ンジスタで構成される相補mMOB入カイフカインバー
タインバータのゲート電極と電源(又は接地電位)にそ
れぞれドレイン及びソース電極が接続されたP(又はN
)チャンネルMO8)ランジスタを挿入し、前記P(又
はN)チャンネルMO8)ランジスタのドレインとソー
スを高抵抗で接続しそのゲート電極は前記相補!MO8
インバータの出力に接続されてなることを特徴とする入
力回路。
(2) P (or N
) Channel MO8) transistor is inserted, the drain and source of the P (or N) channel MO8) transistor are connected with a high resistance, and its gate electrode is connected to the complementary! MO8
An input circuit characterized in that it is connected to the output of an inverter.
JP57002982A 1982-01-12 1982-01-12 Input circuit Pending JPS58120321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57002982A JPS58120321A (en) 1982-01-12 1982-01-12 Input circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57002982A JPS58120321A (en) 1982-01-12 1982-01-12 Input circuit

Publications (1)

Publication Number Publication Date
JPS58120321A true JPS58120321A (en) 1983-07-18

Family

ID=11544574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57002982A Pending JPS58120321A (en) 1982-01-12 1982-01-12 Input circuit

Country Status (1)

Country Link
JP (1) JPS58120321A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250663A (en) * 1986-04-23 1987-10-31 Nec Corp Cmos type input circuit
JPH01112818A (en) * 1987-10-26 1989-05-01 Matsushita Electric Ind Co Ltd Logic circuit
JPH03125531U (en) * 1990-03-29 1991-12-18
JP2009524292A (en) * 2006-01-12 2009-06-25 クゥアルコム・インコーポレイテッド Digital output driver and input buffer using oxide thin film field effect transistors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250663A (en) * 1986-04-23 1987-10-31 Nec Corp Cmos type input circuit
JPH01112818A (en) * 1987-10-26 1989-05-01 Matsushita Electric Ind Co Ltd Logic circuit
JPH03125531U (en) * 1990-03-29 1991-12-18
JP2009524292A (en) * 2006-01-12 2009-06-25 クゥアルコム・インコーポレイテッド Digital output driver and input buffer using oxide thin film field effect transistors

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