JPS5811839A - Flaw detector - Google Patents
Flaw detectorInfo
- Publication number
- JPS5811839A JPS5811839A JP11157881A JP11157881A JPS5811839A JP S5811839 A JPS5811839 A JP S5811839A JP 11157881 A JP11157881 A JP 11157881A JP 11157881 A JP11157881 A JP 11157881A JP S5811839 A JPS5811839 A JP S5811839A
- Authority
- JP
- Japan
- Prior art keywords
- binary
- image
- circuit
- inspected
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】 この発明は傷検出装置に関するものである。[Detailed description of the invention] This invention relates to a flaw detection device.
従来、マイクロスイッチ表面上のひびや欠けを検出する
には、第1図に示すように、マイクロスイッチ1の斜め
上方から光源2によりスポット光3を照射し、ひび4に
よって生ずる乱反射光をカメラ5でとらえて行なってい
た。ところが、第2図(マイクロスイッチ1に矢符A方
向から光を照射して撮像したときのカメラ5の画像6を
示す図)に示すように、スポット光3の乱反射は、ひび
4の部分のみならずエツジ部分7においてもおこるため
、マイクロスイッチ1の位置決め精度を上げ、エツジ部
分7をマスク8で被覆してひび4による乱反射光のみを
抽出するようにしなければならず、マイクロスイッチ1
の高精度位置決め作業およびエツジ部分7のマスクかけ
作業が繁雑であるという問題を有していた。Conventionally, in order to detect cracks or chips on the surface of a microswitch, as shown in FIG. I was doing it by grasping it. However, as shown in FIG. 2 (a diagram showing an image 6 taken by the camera 5 when the microswitch 1 is irradiated with light from the direction of the arrow A), the diffused reflection of the spot light 3 occurs only at the crack 4. However, this also occurs at the edge portion 7, so it is necessary to improve the positioning accuracy of the microswitch 1 and cover the edge portion 7 with a mask 8 to extract only the diffusely reflected light from the crack 4.
The problem is that the high-precision positioning work and the masking work for the edge portion 7 are complicated.
したがって、この発明の目的は、被検査物の高精度位置
決め作業やエツジ部分のマスクかけ作業を省略できる傷
検出装置を提供することである。Therefore, an object of the present invention is to provide a flaw detection device that can omit the work of highly accurate positioning of the object to be inspected and the work of masking the edge portions.
この発明の一実施例を第3図ないし$6図を用いて説明
する。すなわち、この傷検出装置は、第3図に示すよう
にマイクロスイッチ1の上方に配した照明装置9および
カメラ10と、@4図に示すように、2値化回路11.
記憶回路12,13゜論理積回路14および良否!l’
lJ定回路15を備える。An embodiment of the present invention will be described with reference to FIGS. 3 to 6. That is, this flaw detection device includes a lighting device 9 and a camera 10 arranged above the microswitch 1 as shown in FIG. 3, and a binarization circuit 11 as shown in FIG.
Memory circuits 12, 13° AND circuit 14 and pass/fail! l'
An lJ constant circuit 15 is provided.
照明装置9は、レーデ光線投光部16と、鉛直軸の回り
に回転自在な斜鏡17と、放物凹面鏡を輪帯状にカット
して形成した反射鏡[8からなり、レーデ光線投光部1
6から鉛直下方に投射したレーデ光線19を斜鏡17で
反射し、さらに反射鏡18で反射してマイクロスイッチ
1に斜め上方より照射し、斜鏡17を鉛直軸の回りに回
転させることによりレーザ光線19のマイクロスイッチ
1への照射方向を自由に変更できるようにしたものであ
る。The illumination device 9 consists of a Rede beam projector 16, an oblique mirror 17 rotatable around a vertical axis, and a reflector [8] formed by cutting a parabolic concave mirror into an annular shape. 1
The radar beam 19 projected vertically downward from the mirror 17 is reflected by the diagonal mirror 17, and is further reflected by the reflector 18 to irradiate the microswitch 1 diagonally from above.By rotating the diagonal mirror 17 around the vertical axis, the laser beam is The direction of irradiation of the light beam 19 onto the microswitch 1 can be freely changed.
傷の検出をするには、上記照明装置9により、第5図(
a)に示すように、レーデ光線19をマイクロスイッチ
1の後部斜め上方(矢符B方向)がら照射してカメラ1
0で撮影し、その画像2oを2値価回路11により各画
素ごとに21i&化して第6図(a)に示す2値化画像
21を得る。この2値化画像21は、マイクロスイッチ
1のびび4と欠け22ト工ツジ部分7で乱反射が生じて
その部分が他の部分よりも明るく輝くことを利用し、カ
メラ画像20内の乱反射光部分を「1」とし非乱反射光
部分を「0」として各画素ごとに2値化することにより
得たもので、第6図(a)において、23がひび4によ
るデータ、24が欠け22によるデータ、25がエツジ
部分7によるデータである。こうして求めた2値化画@
21は記憶回路12に記憶させる。To detect scratches, use the illumination device 9 as shown in FIG.
As shown in a), the radar beam 19 is irradiated diagonally upward from the rear of the microswitch 1 (in the direction of arrow B), and the camera 1 is
0, and the image 2o is converted into 21i& for each pixel by the binary value circuit 11 to obtain the binary image 21 shown in FIG. 6(a). This binarized image 21 is created by taking advantage of the fact that diffuse reflection occurs at the chatter 4 and chip 22 joint part 7 of the microswitch 1, and that part shines brighter than other parts. It is obtained by binarizing each pixel with the non-diffuse reflected light part as "1" and "0". In Fig. 6(a), 23 is the data due to the crack 4, and 24 is the data due to the chip 22. , 25 is the data from the edge portion 7. Binarized image obtained in this way @
21 is stored in the memory circuit 12.
ついで、斜鏡17を180度回転し、第5図/b)に示
すように、レーザ光線19をマイクロスイッチ1の前部
斜め上方(矢符C方向)から照射し、上記と同様、カメ
ラ10でマイクロスイッチ1を撮影し、そのカメラ画像
26を2値化回路11により各画素ごとに2値化して第
6図(b)に示す2値化画像27を得、これを記憶回路
13に記憶させる。Next, the oblique mirror 17 is rotated 180 degrees, and as shown in FIG. The microswitch 1 is photographed by the camera, and the camera image 26 is binarized for each pixel by the binarization circuit 11 to obtain a binarized image 27 shown in FIG. 6(b), which is stored in the storage circuit 13. let
この場合、2値化画像27因において28r/′iひび
4によるデータ、29は欠け22によるデータ、30は
エツジ部分31によるデータである。In this case, in the binarized image 27, 28 r/'i data is due to the crack 4, 29 is data due to the chip 22, and 30 is data due to the edge portion 31.
そして、面記憶回路12.13にそれぞれ記憶させた2
値化画像21.27を論理積回路14に入力し、この論
理積回路14で、両2値化回路21゜27丙の同じアド
レスの論理積をとって@6図(C)に示す傷判定用2値
化画像:)2を得る。この場合、ひび4や欠け22によ
る乱反射位置は光照射方向が変わっても変化しないが、
エツジ部分7,31による乱反射位置は光照射方向が変
わると変化するため、両2値化画像21.27の論理積
をとってえた傷判定用2値化画像32内にけひび4によ
るデータ33と欠け22によるデータ34だけが残り、
エツジ部分7.31によるデータは全て消え去ることに
なる。そして、この傷判定用2値化画像32を良否判定
回路15に入力し、この良否判定回路15では、W1判
定用2値化画像32内の少なくとも1区画にひび4や欠
け22によるデータ33.34が伐っていれば「不良」
と判定し、データ33.34が残っていなければ「良」
と判定して、ひぴ4や欠け22等の傷を検出する。Then, the 2
The digitized images 21 and 27 are input to the AND circuit 14, and the AND circuit 14 calculates the AND of the same addresses of both the binarization circuits 21 and 27 to determine the flaw as shown in Figure 6 (C). Obtain a binary image: ) 2. In this case, the position of diffuse reflection due to the crack 4 or chip 22 does not change even if the light irradiation direction changes,
Since the position of diffused reflection by the edge portions 7 and 31 changes when the light irradiation direction changes, data 33 due to the crack 4 is included in the binary image 32 for flaw determination obtained by logical product of both the binary images 21 and 27. Only data 34 due to missing 22 remains,
All data due to edge portion 7.31 will be erased. Then, this binary image 32 for flaw determination is inputted to the quality determination circuit 15, and in this quality determination circuit 15, data 33. If 34 is cut, it is "defective"
If the data 33.34 does not remain, it is "good".
It is determined that flaws such as crack 4 and chip 22 are detected.
このように、マイクロスイッチ1に対して2方向から光
を照射したときの2値化画像21,27の論理積をとる
ようにしたため、傷判定用2値化(5)
画像32にはエツジ部分7,31のデータ25゜30が
消し去られてひび4や欠け22によるデータ33.34
のみが残り、これが良否判定回路15に送り込まれて傷
が検出されるので、従来のようにエツジ部分7.31の
データを消滅させるための高精度位置決め作業やマスク
かけ作業を省略することができる。また、装置の構成も
極めて簡単である。さらに、光を180度異なる方向か
ら照射して得る2値化画像21.27の論理積をとる操
作を何回も繰り返すことにより、傷の検出精度を向上で
きる。In this way, since the binary images 21 and 27 obtained when the microswitch 1 is irradiated with light from two directions are logically ANDed, the edge portion is not included in the binary image 32 for flaw determination (5). 7,31 data 25° 30 is erased and data 33.34 due to cracks 4 and chips 22
This remains and is sent to the pass/fail judgment circuit 15 to detect flaws, making it possible to omit the conventional high-precision positioning work and masking work to erase the data on the edge portion 7.31. . Furthermore, the configuration of the device is extremely simple. Further, by repeating the logical product of the binary images 21 and 27 obtained by irradiating light from 180 degrees different directions many times, the flaw detection accuracy can be improved.
なお、第3図の照明装置9に代えて、第7図の照明装置
35を用いてもよい。この照明装置35は相対する光源
36からストロボスポット光を順次発光させていくもの
で、光源36は任意の組準備する。この照明装置35を
用いるときけ、各光源36による発光のたびに2値化回
路11により2値化画像を得て記憶回路12.13に順
次記憶させていき、論理積回路14でその論理積をとっ
て良否判定回路15に入力することにより、上記(6)
実施例と同様、マイクロスイッチ1の高度位置決め作業
およびエツジ部分7,31のマスクかけ作業を行なわず
に傷の検出を行なえる。、。Note that the illumination device 35 in FIG. 7 may be used instead of the illumination device 9 in FIG. 3. This illumination device 35 sequentially emits strobe spot light from opposing light sources 36, and any set of light sources 36 is prepared. When this illumination device 35 is used, each time each light source 36 emits light, a binarized image is obtained by the binarization circuit 11 and sequentially stored in the memory circuits 12 and 13. By inputting it to the pass/fail judgment circuit 15, flaws can be detected without performing the high positioning work of the microswitch 1 and the masking work of the edge portions 7 and 31, as in the embodiment (6) above. ,.
以上のように、この発明の傷検出装置は、被検査物の少
なくとも両側2方向から光を照射自在な照明装置と、前
記光に照らされた被検査物を撮影するカメラと、このカ
メラで撮影した画像の乱反射部分を「1」とし非凡射光
部分を「()」として各画素ごとに2値化することによ
り2値化画像を得る2値化回路と、前記スポット光の照
射方向を変えて得た前記各2値化画像をそれぞれ記憶す
る第1および第2の記憶回路と、これら第1および$2
の記憶回路の同じアドレスの記憶内容の論理積をとる論
理積回路と、この論理積回路からの出力信号の有無によ
り被検査物の傷の有無を判定する良否判定回路とを備え
たため、被検査物の高精度位置決め作業やエツジ部分の
マスクかけ作業を省略できるという効果がある。As described above, the flaw detection device of the present invention includes: an illumination device that can freely irradiate light from at least two directions on both sides of an object to be inspected; a camera that photographs the object to be inspected illuminated by the light; A binarization circuit that obtains a binarized image by binarizing each pixel with the diffuse reflection part of the image as "1" and the extraordinary emitted light part as "()"; first and second storage circuits that respectively store the obtained binarized images;
It is equipped with an AND circuit that takes the AND of the memory contents at the same address in the memory circuit of the AND circuit, and a pass/fail judgment circuit that determines the presence or absence of flaws on the inspected object based on the presence or absence of an output signal from this AND circuit. This has the effect of omitting the work of high-precision positioning of objects and the work of masking edges.
第1図は従来例の斜視図、第2図はカメラの画像を示す
図、第3図はこの発明の一実施例に用いる照明装置の斜
視図、第4図はこの実施例のブロック図、第5図(a)
、 (b)はそれぞれマイクロスイッチにレーザ光を
照射したときのカメラの画像を示す図、第6図(a)
、 (b)ば2値化画像を示す図、第6図(C)はそれ
らの論理積をとった@!l!J定用2値他用2値化
置の斜視図である。
1・・・マイクロスイッチ(被検査物)、4・・・ひび
、9、35・・・照明装置、10・・・カメラ、11・
・・2値化回路、12.13・・・記憶回路、14・・
・論理積回路、15・・・良否判定回路、20.26・
・・カメラ画像、21,27・・・2値化画像、22・
・・欠け− 1く
ゝ−〕DFIG. 1 is a perspective view of a conventional example, FIG. 2 is a diagram showing a camera image, FIG. 3 is a perspective view of an illumination device used in an embodiment of the present invention, and FIG. 4 is a block diagram of this embodiment. Figure 5(a)
, (b) are diagrams showing camera images when the microswitch is irradiated with laser light, and Figure 6 (a) is
, (b) is a diagram showing the binarized image, and FIG. 6 (C) is the logical AND of @! l! FIG. 2 is a perspective view of a binarization device for J-standard binary values and others. DESCRIPTION OF SYMBOLS 1... Micro switch (test object), 4... Crack, 9, 35... Lighting device, 10... Camera, 11...
...Binarization circuit, 12.13...Memory circuit, 14...
・Logic product circuit, 15... Pass/fail judgment circuit, 20.26・
...Camera image, 21, 27...Binarized image, 22.
・・Chip - 1 piece -] D
Claims (1)
明装置と、前記光に照らされた被検査物を撮影するカメ
ラと、このカメラで撮影した画像の乱反射光部分を「1
」とし非凡射光部分を「0」として各画素ごとに2値化
することにより2値化画像を得る2値化回路と、曲記ス
ポット光の照射方向を変えて得た前記各2値化画像をそ
れぞれ記憶する第1および第2の記憶回路と、とハら第
1および第2の記憶回路の同じアドレスの記憶内容の論
理積をとる論理積回路と、この論理積回路からの出力信
号の有無により被検査物の傷の有無を判定する良否判定
回路とを備えた傷検出装置。An illumination device that can freely irradiate light from at least two directions on both sides of the object to be inspected, a camera that photographs the object to be inspected illuminated by the light, and a diffusely reflected light portion of the image taken by this camera
'' and binarizing each pixel by setting the extraordinary emitted light portion to ``0'' to obtain a binarized image, and each of the above-mentioned binarized images obtained by changing the irradiation direction of the spot light. an AND circuit that takes the AND of the storage contents at the same address in the first and second storage circuits, and an output signal from the AND circuit. A flaw detection device includes a pass/fail judgment circuit that determines the presence or absence of flaws on an object to be inspected based on the presence or absence of flaws.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11157881A JPS5811839A (en) | 1981-07-15 | 1981-07-15 | Flaw detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11157881A JPS5811839A (en) | 1981-07-15 | 1981-07-15 | Flaw detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5811839A true JPS5811839A (en) | 1983-01-22 |
Family
ID=14564918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11157881A Pending JPS5811839A (en) | 1981-07-15 | 1981-07-15 | Flaw detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5811839A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005345386A (en) * | 2004-06-04 | 2005-12-15 | Tdk Corp | Inspection method for chip component, and inspection device therefor |
JP2015102382A (en) * | 2013-11-22 | 2015-06-04 | 日本電信電話株式会社 | Concrete structure deterioration detection apparatus, deterioration detection method, and program thereof |
-
1981
- 1981-07-15 JP JP11157881A patent/JPS5811839A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005345386A (en) * | 2004-06-04 | 2005-12-15 | Tdk Corp | Inspection method for chip component, and inspection device therefor |
JP2015102382A (en) * | 2013-11-22 | 2015-06-04 | 日本電信電話株式会社 | Concrete structure deterioration detection apparatus, deterioration detection method, and program thereof |
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