JPS58116782A - 光電検出器 - Google Patents
光電検出器Info
- Publication number
- JPS58116782A JPS58116782A JP57163291A JP16329182A JPS58116782A JP S58116782 A JPS58116782 A JP S58116782A JP 57163291 A JP57163291 A JP 57163291A JP 16329182 A JP16329182 A JP 16329182A JP S58116782 A JPS58116782 A JP S58116782A
- Authority
- JP
- Japan
- Prior art keywords
- detector
- junction
- detection
- noise
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30413281A | 1981-09-21 | 1981-09-21 | |
| US304132 | 1981-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58116782A true JPS58116782A (ja) | 1983-07-12 |
| JPS6245715B2 JPS6245715B2 (cg-RX-API-DMAC7.html) | 1987-09-28 |
Family
ID=23175192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57163291A Granted JPS58116782A (ja) | 1981-09-21 | 1982-09-21 | 光電検出器 |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0075476A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS58116782A (cg-RX-API-DMAC7.html) |
-
1982
- 1982-09-21 JP JP57163291A patent/JPS58116782A/ja active Granted
- 1982-09-21 EP EP82304948A patent/EP0075476A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6245715B2 (cg-RX-API-DMAC7.html) | 1987-09-28 |
| EP0075476A2 (en) | 1983-03-30 |
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