JPS58115816A - Vapor growing device for compound semiconductor - Google Patents

Abstract

PURPOSE:To decrease the constituent of a high toxic and undecomposed V-group hydrogen compound in exhaust gas and to reduce a burden to noxious gas removing device by a method wherein a hydrogen compound of a V-group element is previously heated before mixing the hydrogen compound with an organic compound of a III-group element to promote decomposition. CONSTITUTION:Hydrogen H2 gas for dilution and H2 gas for supplying trimethyl gallium (TMG) 205 are adjusted with flowmeters 202 and 203, and after combining TMG, both the H2 gases are mixed with a mixer 207, and is introduced into a reaction container 212 from a first gas introduction tube 208. Arsenide hydrogen gas AsH3 is adjusted by a flowmeter 204 to introduce into a spare heating chamber 210 and a part of the arsenide hydrogen gas AsH3 is heated and decomposed. This gas is blown out from a second gas introduction pipe 209 to mix with TMG flowed from the first gas introduction pipe 208 and is again heated. The gas is deposited as a GaAs crystal on an arsenide gallium (GaAs) sibstrate 211 held with a supporting body 213. The remaining gas is introduced into a poisonous gas removing device 216 through an air outlet 215 to exhaust to the air.

Description

[Detailed Description of the Invention] Technical Field of the Invention This invention relates to chemical vapor phase growth of a chemical compound semiconductor using thermal decomposition of at least one organic compound of a group I element and at least one compound of a group V element. [Regarding the vapor phase growth apparatus used when carrying out], a metal compound improved to promote the thermal decomposition of hydrogen compounds of group V elements in particular and to reduce the components of highly toxic metal hydrides in the exhaust gas. The present invention relates to a semiconductor vapor phase growth apparatus.

Technical Background of the Invention A compound semiconductor vapor phase method known as a good thermal decomposition method utilizes thermal decomposition of at least one type of organic compound of Group I elements and at least one type of hydrogen compound of Group V elements. The growth method is that all the vapor phase growth equipment can be fed into the reaction vessel in a gaseous state.
It is compared to the vapor phase growth method, which utilizes the disproportionation reaction between a solid group I element and a chlorine compound of a group V element and is called a halogen transport method, in that it only requires a single growth temperature range. It has many excellent characteristics and has recently been widely used in the vapor phase growth of compound semiconductors.

As an example of the thermal decomposition method, a conventional apparatus used for vapor phase growth of gallium arsenide (Ga1s) will be described below. 1st
The figure is a schematic diagram of this device. In FIG. 1, hydrogen gas for dilution passes through a purification device (101), is regulated to a predetermined amount by a flow needle (102), and is sent to a reaction vessel (1@). Trimethylgallium (TMG), a type of organic compound of group
) is a liquid at room temperature, a predetermined amount of hydrogen gas is fed into the TMG storage container (105) by adjusting the flow rate needle (103), and the hydrogen gas is contained in the TMG vapor in the container (105). and sent to the reaction vessel (109). Hydrogen arsenide gas (mu), which is a type of hydrogen compound of group V, is
Flow rate needle (104) supplied directly from high pressure vessel (106)
The amount is adjusted to a predetermined amount and sent to the reaction container (109).

These raw material gases are once mixed by a mixer (107) with the rice that reaches the reaction vessel (109), and then introduced into the reaction vessel (109) through the raw material gas inlet (108). Then, it is heated by a high frequency coil (110) and thermally decomposed near the ninth heating table (112).
2) Gap on the GaAa substrate (111) placed on top
Deposited as s crystals.

When performing Ga-mu-Hatake vapor phase growth with such an apparatus, Ga-mu S
1. The temperature of the substrate (111) is normally set at 4! to maintain the smoothness of the surface of the GaAs growth layer. Go℃ to 750
Growth is performed by selecting an arbitrary point in the temperature range of ℃. However, when vapor phase growth is performed at this growth temperature, the supply of 9 μsH
Only a portion of 1 is decomposed and consumed in the GaAs growth phase, and the rest remains undecomposed and is dissolved in the exhaust gas. Since this AsH1 gas is highly toxic and dangerous to discharge into the atmosphere, the gas exiting the exhaust port (113) is led to the -1 harmful gas removal device (114), where the AsH1 gas is completely removed. After that, it will be released into the atmosphere.

Problems with the Background Art As described above, in the conventional equipment, the amount of undecomposed 5sH3 gas is large, so the harmful gas removal equipment is consumed rapidly.
MusH @ 300117/111m diluted to 096,
'I' MG 801! When vapor phase growth is performed at 700°C for 30 minutes while flowing 30 −/− of hydrogen gas containing hydrogen gas, the performance of the harmful gas removal device (114) decreases after 20 times of vapor phase growth, and this point is This is a drawback of the device.

Purpose of the Invention This invention decomposes a hydrogen compound of group V element by heating it in advance before mixing it with an organic compound of group m element to decompose it. It is an object of the present invention to provide a compound semiconductor vapor phase member device that is improved so as to reduce the amount of gas and the burden on the harmful gas removal device.

Summary of the Invention Namely, this invention involves thermally decomposing at least one type of organic compound of M group elements and at least one type of hydrogen compound of V group elements in a reaction chamber to perform compound semiconductor vapor phase growth in a row of 5 meters. In the compound semiconductor vapor phase deposition apparatus used, there is a first gas introduction pipe for introducing a group (III) organic compound from the front of the surface of the compound semiconductor substrate in the reaction chamber toward the surface of the substrate, and a The compound semiconductor vapor phase growth apparatus is provided with a second gas introduction pipe which is opened between the opening of the gas introduction pipe and has a preheating chamber for raising the temperature and introducing a group 9V hydrogen compound.

In the apparatus described above, the second gas inlet pipe is heated to a maximum length along the heating body in the reaction chamber to form a preheating chamber to raise the temperature of the V raw hydrogen compound.

Embodiments of the Invention The embodiments of the present invention will be explained below with reference to the drawings from the introduction tube (20B) to the reaction chamber. This heating room (
210) K is guided. When Mu@H1 passes through here, a part of it is thermally decomposed. This gas is transferred to the second gas introduction pipe (2
09), mixed with TMG flowing in from the first gas introduction pipe (20g) and heated again.
3) Gallium arsenide (Ga Mukyo) substrate (21
1) Deposit as a Gaps crystal on top. The remaining gas that has contributed to the gap growth is passed through the exhaust port (215) to the harmful gas removal device (216), and the gas in the exhaust gas is removed.
The H3 component is completely removed and the kernels are released into the atmosphere.

- Using this equipment, when vapor phase growth is performed for 30 minutes at a growth temperature of 700°C while flowing MusH1 diluted by 1 onK with hydrogen gas, harmful gases can be removed in 20 growths as described above with a conventional growth equipment. Compared to the 6-9 times when the equipment needs to be replaced due to a decrease in its capacity, this equipment can perform growth 30 times, and it is recognized that the functionality of the noxious gas removal equipment can be maintained for a long period of time. In this embodiment, a horizontal type vapor phase growth apparatus is used, but the present invention can also be applied to a vertical type.

Furthermore, this method is not limited to Group 2 (it may also be applied to the growth of compound semiconductors having other m-v group elements as constituent elements).

Effects of the Invention As described above, according to the apparatus of the present invention, by heating the hydrogen compound of group V element in advance through the preheating chamber, the organic compound of group V element and the hydrogen compound of group V element can be combined. By thermal decomposition, harmful hydrogen compound components of group V elements can be reduced from the exhaust gas, and a single-phase vapor growth apparatus suitable for vapor-phase growth of compound semiconductors can be provided.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing an example of an integrated vapor phase growth apparatus of a conventional compound semiconductor vapor phase growth apparatus. In Fig. 1, (101)...hydrogen gas purification equipment, (102) to (1
04)...Flow rate needle, (105)-TMG storage container, (106)...MusH1 gas-W4 (107)
... Mixer, (IO2) ... Raw material gas inlet, (109) ... Reaction vessel, (110)
-...High frequency coil, (111)...Gmarim board,
(112)...Heating table, (113) -...
Exhaust port, (114)...Harmful gas removal device, (201) in Figure 2...Hydrogen gas purification device, (202) ~(
204) ...Flow rate needle, (205) ・'r MG
Storage container, (206) -, AsH1 gas, 1ll-
(207) ---Mixer, (208)-
...i-th gas inlet, (209)...first gas inlet, (210)...preheating chamber, (211) =-G
aAs substrate, (212) ---reaction vessel, (
213) -...Support, (214)...
Heating body, (215)...exhaust port, (216
)...Hazardous gas removal device agent Patent attorney Inoue
-man

Claims (1)

[Claims] ■Compound semiconductor vapor phase used when performing compound semiconductor vapor phase growth by thermally decomposing at least one organic compound of Group V elements and at least one hydrogen compound of Group V elements in a reaction chamber. In the growth apparatus, a
a first gas introduction pipe for introducing a group V organic compound; and a second gas introduction pipe, which is opened between the substrate surface and the opening of the first gas introduction pipe and has a preheating chamber, and introduces a heated group V hydrogen compound. A compound semiconductor vapor phase growth apparatus characterized by comprising a gas introduction pipe.