JPH01103996A - Vapor growth method for compound semiconductor - Google Patents

Vapor growth method for compound semiconductor

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Publication number
JPH01103996A
JPH01103996A JP26083087A JP26083087A JPH01103996A JP H01103996 A JPH01103996 A JP H01103996A JP 26083087 A JP26083087 A JP 26083087A JP 26083087 A JP26083087 A JP 26083087A JP H01103996 A JPH01103996 A JP H01103996A
Authority
JP
Japan
Prior art keywords
raw material
group iii
reactor
introduced
org
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26083087A
Other versions
JP2687371B2 (en
Inventor
Kazuo Mori
Chiaki Sasaoka
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP26083087A priority Critical patent/JP2687371B2/en
Publication of JPH01103996A publication Critical patent/JPH01103996A/en
Application granted granted Critical
Publication of JP2687371B2 publication Critical patent/JP2687371B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

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Abstract

PURPOSE: To enable atomic layer epitaxy which is capable of yielding a high-purity crystal at a low temp. in a growth method in which a group III org. metal raw material and group V raw material are alternately supplied by specifying the group III raw material, then cracking and supplying the two gaseous raw materials.
CONSTITUTION: The org. metal contg. 1W2 bonds of the group III atom and halogen atom in the molecule, for example, diethyl gallium chloride, is used as the group III raw material. Said material is bubbled by gaseous carrier H2 12 in a bubbler 11 and is introduced into a reaction tube 13. A reactor 13 is heated at this time and the mid-point piping is insulated by a heater 14. The group V raw material is bubbled in the same manner as mentioned above and is introduced into the reactor 13. Arsine 17 is also introduced via a flow rate controller 18 into the reactor. A substrate crystal 19 is installed together with a susceptor 20 in a growth region and the light of a deuterium lamp 22 is introduced into the reactor from a quartz window 21 thereof. The raw material cracking region is kept at a prescribed temp. and the raw materials are cracked. The cracked group III and V raw materials are alternately supplied to the substrate 19, by which the org. metal atom layer of the compd. semiconductor is epitaxially grown on the substrate.
COPYRIGHT: (C)1989,JPO&Japio
JP26083087A 1987-10-16 1987-10-16 Vapor deposition of compound semiconductor Expired - Lifetime JP2687371B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26083087A JP2687371B2 (en) 1987-10-16 1987-10-16 Vapor deposition of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26083087A JP2687371B2 (en) 1987-10-16 1987-10-16 Vapor deposition of compound semiconductor

Publications (2)

Publication Number Publication Date
JPH01103996A true JPH01103996A (en) 1989-04-21
JP2687371B2 JP2687371B2 (en) 1997-12-08

Family

ID=17353351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26083087A Expired - Lifetime JP2687371B2 (en) 1987-10-16 1987-10-16 Vapor deposition of compound semiconductor

Country Status (1)

Country Link
JP (1) JP2687371B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5483919A (en) * 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US9012334B2 (en) 2001-02-02 2015-04-21 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5483919A (en) * 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US9012334B2 (en) 2001-02-02 2015-04-21 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

Also Published As

Publication number Publication date
JP2687371B2 (en) 1997-12-08

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