JPS58115096A - リチウムニオベ−ト単結晶の単一分域化方法 - Google Patents

リチウムニオベ−ト単結晶の単一分域化方法

Info

Publication number
JPS58115096A
JPS58115096A JP56209369A JP20936981A JPS58115096A JP S58115096 A JPS58115096 A JP S58115096A JP 56209369 A JP56209369 A JP 56209369A JP 20936981 A JP20936981 A JP 20936981A JP S58115096 A JPS58115096 A JP S58115096A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
electric field
lithium niobate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209369A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234720B2 (enrdf_load_stackoverflow
Inventor
Tadao Komi
小見　忠雄
Kenichi Shindo
新藤　健一
Kazuhiro Yamada
一博 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56209369A priority Critical patent/JPS58115096A/ja
Publication of JPS58115096A publication Critical patent/JPS58115096A/ja
Publication of JPS6234720B2 publication Critical patent/JPS6234720B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
JP56209369A 1981-12-25 1981-12-25 リチウムニオベ−ト単結晶の単一分域化方法 Granted JPS58115096A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209369A JPS58115096A (ja) 1981-12-25 1981-12-25 リチウムニオベ−ト単結晶の単一分域化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209369A JPS58115096A (ja) 1981-12-25 1981-12-25 リチウムニオベ−ト単結晶の単一分域化方法

Publications (2)

Publication Number Publication Date
JPS58115096A true JPS58115096A (ja) 1983-07-08
JPS6234720B2 JPS6234720B2 (enrdf_load_stackoverflow) 1987-07-28

Family

ID=16571787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209369A Granted JPS58115096A (ja) 1981-12-25 1981-12-25 リチウムニオベ−ト単結晶の単一分域化方法

Country Status (1)

Country Link
JP (1) JPS58115096A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179897A (ja) * 2001-09-11 2006-07-06 Sumitomo Electric Ind Ltd 被処理物保持体、半導体製造装置用サセプタおよび処理装置
CN113293442A (zh) * 2021-05-26 2021-08-24 焦作晶锐光电有限公司 一种铌酸锂晶体的新型单畴化工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264697A (en) * 1975-11-22 1977-05-28 Fujitsu Ltd Process for treating single area

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264697A (en) * 1975-11-22 1977-05-28 Fujitsu Ltd Process for treating single area

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179897A (ja) * 2001-09-11 2006-07-06 Sumitomo Electric Ind Ltd 被処理物保持体、半導体製造装置用サセプタおよび処理装置
CN113293442A (zh) * 2021-05-26 2021-08-24 焦作晶锐光电有限公司 一种铌酸锂晶体的新型单畴化工艺

Also Published As

Publication number Publication date
JPS6234720B2 (enrdf_load_stackoverflow) 1987-07-28

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