JPS5811258U - integrated circuit - Google Patents

integrated circuit

Info

Publication number
JPS5811258U
JPS5811258U JP10518181U JP10518181U JPS5811258U JP S5811258 U JPS5811258 U JP S5811258U JP 10518181 U JP10518181 U JP 10518181U JP 10518181 U JP10518181 U JP 10518181U JP S5811258 U JPS5811258 U JP S5811258U
Authority
JP
Japan
Prior art keywords
integrated circuit
transistor
mos transistor
type substrate
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10518181U
Other languages
Japanese (ja)
Inventor
「ぬき」山 知二
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP10518181U priority Critical patent/JPS5811258U/en
Publication of JPS5811258U publication Critical patent/JPS5811258U/en
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す部分回路図、第2図は
第1図の出力バッファ部がNチャネルSiデー1−MO
3集積回路で構成された場合のパターン図である。 1・・・・・・MO3集積回路の出力端子、2・・・・
・・P型基盤NチャネルエンハンスメントMOSトラン
ジスタ、3・・・・・・P型基盤Nチャネルエンハンス
メントMOSトランジスタ、4・・・・・・P型基盤N
チャネルデプレッションMOSトランジスタ、5・・・
・・・P型基盤Nチャ・ネルエンハンスメントMOSト
ランジスタ、6・・・・・・切換機構、7・・・・・・
出力バッファの入力信号(逆相)。
FIG. 1 is a partial circuit diagram showing one embodiment of the present invention, and FIG. 2 shows that the output buffer section of FIG. 1 is an N-channel Si data 1-MO
FIG. 3 is a pattern diagram when the circuit is configured with three integrated circuits. 1... Output terminal of MO3 integrated circuit, 2...
... P-type substrate N-channel enhancement MOS transistor, 3 ... P-type substrate N-channel enhancement MOS transistor, 4 ... P-type substrate N
Channel depression MOS transistor, 5...
...P-type substrate N-channel enhancement MOS transistor, 6...Switching mechanism, 7...
Input signal of output buffer (negative phase).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 集積回路の出力を構成する負荷としてのエンハンスメン
ト・トランジスタのゲートをこのトランジスタのしゃ断
電位に固定する手段を設けたことを特徴とする集積回路
1. An integrated circuit comprising means for fixing the gate of an enhancement transistor as a load constituting an output of the integrated circuit to a cutoff potential of the transistor.
JP10518181U 1981-07-15 1981-07-15 integrated circuit Pending JPS5811258U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10518181U JPS5811258U (en) 1981-07-15 1981-07-15 integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10518181U JPS5811258U (en) 1981-07-15 1981-07-15 integrated circuit

Publications (1)

Publication Number Publication Date
JPS5811258U true JPS5811258U (en) 1983-01-25

Family

ID=29899725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10518181U Pending JPS5811258U (en) 1981-07-15 1981-07-15 integrated circuit

Country Status (1)

Country Link
JP (1) JPS5811258U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073690U (en) * 1983-10-28 1985-05-23 川崎重工業株式会社 Step mounting structure
JPS60104817U (en) * 1983-12-23 1985-07-17 松下電工株式会社 X-ray film observation device
JPS63292647A (en) * 1987-05-26 1988-11-29 Fuji Xerox Co Ltd Semiconductor integrated circuit device
JPH02262716A (en) * 1989-04-03 1990-10-25 Mitsubishi Electric Corp Semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073690U (en) * 1983-10-28 1985-05-23 川崎重工業株式会社 Step mounting structure
JPS60104817U (en) * 1983-12-23 1985-07-17 松下電工株式会社 X-ray film observation device
JPS63292647A (en) * 1987-05-26 1988-11-29 Fuji Xerox Co Ltd Semiconductor integrated circuit device
JPH02262716A (en) * 1989-04-03 1990-10-25 Mitsubishi Electric Corp Semiconductor integrated circuit

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