JPS58110072A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS58110072A JPS58110072A JP20863581A JP20863581A JPS58110072A JP S58110072 A JPS58110072 A JP S58110072A JP 20863581 A JP20863581 A JP 20863581A JP 20863581 A JP20863581 A JP 20863581A JP S58110072 A JPS58110072 A JP S58110072A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- diode
- base
- transistor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 238000011084 recovery Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はトランジスタのエミッタとコレクター間にエミ
ッタ接合に逆並列に高速ダイオードを接続し、ベース、
エミッタ間に抵抗を接続してなる半導体装置に関する。[Detailed description of the invention] The present invention connects a high-speed diode in antiparallel to the emitter junction between the emitter and collector of a transistor, and
The present invention relates to a semiconductor device having a resistor connected between emitters.
トランジスタを例えばパルス暢変ｇｌ （ＰＷＭ）
方式によるモータ制御に用いる場合、負荷に誘導性のあ
ることや回生動作の関係から第１図に示すようにＮＰＮ
トランジスタｌのエミッタからコレクタからコレクタへ
逆並列にダイオード２が接続される。第２図に示すＰＷ
Ｍ方式のトランジスタインバータにおいて、例えばトラ
ンジスタ４がＰＷＭ動作を行うときには、そのターンオ
ン時にダイオード５の逆方向回復電流がコレクタ電流に
型費されるため、トランジスタ４のターンオン損失が増
加する。このターンオン損失を減するためにはダイオー
ド５には高速ダイオードが必要で、同様に他のダイオー
ドも高速ダイオードが望ましい。一方、高耐圧トランジ
スタでは耐電圧特性ならびにその安定性の向上のために
、第１図に示すように０ベース、エミッタ間に抵抗３が
接続される。ところが、この抵抗３の接続は全体として
の逆回復時間ｔｒｒを増加させる働きをもつ。今、第３
図でエミッタ端子Ｅを正、コレクタ端子Ｃを負とするト
ランジスタｌのエミッタ接合に対するｆ′ＷＬ圧が印加
されると、電流はＥからダイオード２を通じてＣへ流れ
るばかりでなく、Ｅから抵抗３を通じてトランジスタｌ
のベース層へ、さらすこ唄バイアスのベース、コレクタ
間接合を経てＣに流れるため、トランジスタの逆方向′
ｄＬ流増幅作用によってトランジスタ内部を通じてもＥ
からＣへ電流が流れる。For example, a transistor can be used as a pulse width variable GL (PWM)
When used for motor control using the NPN method, as shown in Figure 1 due to the inductive nature of the load and the relationship
A diode 2 is connected in antiparallel from the emitter to the collector of the transistor l. PW shown in Figure 2
In the M-type transistor inverter, for example, when the transistor 4 performs PWM operation, the reverse recovery current of the diode 5 is used as a collector current when it is turned on, so that the turn-on loss of the transistor 4 increases. In order to reduce this turn-on loss, a high-speed diode is required as the diode 5, and similarly, high-speed diodes are also desirable for the other diodes. On the other hand, in a high voltage transistor, a resistor 3 is connected between the 0 base and the emitter, as shown in FIG. 1, in order to improve voltage resistance characteristics and stability. However, the connection of this resistor 3 has the effect of increasing the overall reverse recovery time trr. Now, the third
In the figure, when f'WL pressure is applied to the emitter junction of transistor l, with emitter terminal E being positive and collector terminal C being negative, current not only flows from E through diode 2 to C, but also from E through resistor 3. transistor l
The reverse direction of the transistor '
Due to the dL current amplification effect, E
Current flows from C to C.
つづいてＣが正、Ｅが負の電圧が印加された場合には、
たとえダイオード２のｔｒｒがきわめて短いとしてもト
ランジスタｌのベースの蓄積キャリヤによってトランジ
スタｌを通じてＣからＥへ電流が流れ、結果として全体
のｔｒｒが長くなる。すなわちトランジスタの寄生効果
がｔｒｒの増大をもたらす。この寄生効果を防止するた
め、Ｃを正、Ｅを負にした場合に同時にＢと８間に逆ノ
（イアスすることが知られているが、逆バイアス用の別
電源が必要となり、ベース駆動回路も複雑になる欠点が
ある。Next, when a voltage is applied where C is positive and E is negative,
Even if the trr of diode 2 is very short, the accumulated carriers at the base of transistor l will cause current to flow from C to E through transistor l, resulting in a longer overall trr. That is, the parasitic effect of the transistor causes an increase in trr. In order to prevent this parasitic effect, it is known that when C is made positive and E is made negative, a reverse voltage is applied between B and 8 at the same time, but a separate power supply for reverse bias is required, and the base drive The disadvantage is that the circuit becomes complicated.
本発明はこの欠点を除き、より簡単なやり方で逆並列ダ
イオードおよび抵抗接続のトランジスタの全体の逆回復
時間の増大を防止した半導体装置を提供することを目的
とする。It is an object of the present invention to eliminate this drawback and provide a semiconductor device in which an increase in the overall reverse recovery time of anti-parallel diodes and resistor-connected transistors is prevented in a simpler manner.
この目的はトランジスタのベース、エミッタ間に抵抗と
、その抵抗に直列でベース、エミッタ接合に並列であり
、ベース、エミッタ間のえんｍｔ圧より低いえん層電圧
を有するダイオードとを接続することによって達成され
る。そのようなダイオードとしては例えばショットキー
ノ（リヤダイオードを用いることが望ましい。This purpose is achieved by connecting a resistor between the base and emitter of the transistor and a diode in series with the resistor and parallel to the base-emitter junction and having an emitter layer voltage lower than the base-emitter emitter pressure. be done. As such a diode, it is desirable to use, for example, a Schottchino diode (rear diode).
以下図を引用して本発明の実施例について説明する。第
４図においては、トランジスタｌのベース、エミッタ間
に抵抗３のほかにベースからエミッタに向けて順方向の
ダイオード６が接続されている。ダイオード４には、例
えはショットキーノ（リヤダイオードを用いるので、そ
の臓電圧がトランジスタｌのベース、エミッタ飽和電圧
Ｖ Ｂ Ｂ （ｓ＆ｔ ）より低いため、ベース端子Ｂ
からエミッタ端子Ｅヘベース電流が流れるとき、抵抗３
がベース、エミッタ間のそう大抵抗としてｍき、Ｅを正
、Ｃを負とする電圧が印加されたときにはダイオード６
は抵抗３を通じてＥからＢへ流れる４冗を阻止するため
、トランジスタ寄生効果は起こらず、従ってｔｒｒの増
大を防止できる。Embodiments of the present invention will be described below with reference to the drawings. In FIG. 4, in addition to a resistor 3, a forward diode 6 is connected between the base and emitter of the transistor l from the base to the emitter. For diode 4, for example, a Schottkyno (rear diode) is used, so its internal voltage is lower than the base and emitter saturation voltage V B B (s&t) of transistor l, so that the base terminal B
When base current flows from emitter terminal E to emitter terminal E, resistor 3
is a very large resistance between the base and emitter, and when a voltage with E as positive and C as negative is applied, the diode 6
Since this blocks the current flowing from E to B through the resistor 3, transistor parasitic effects do not occur, and therefore an increase in trr can be prevented.
第５図はダーリントントランジスタに′！６ける実施例
で、この場合は少なくとも最終出力段トランジスタ１１
のベース、エミッタ間抵抗３１に直列ｌこショットキー
バリヤダイオード６を接続して、出力段トランジスタ１
１０）ｔｒｒの増大を防止する。Figure 5 shows the Darlington transistor'! In this embodiment, at least the final output stage transistor 11
A Schottky barrier diode 6 is connected in series to the base-emitter resistor 31 of the output stage transistor 1.
10) Prevent increase in trr.
第４図、第５図の例でベース、エミッタ間に接続される
ダイオード６は必ずしもショットキーノくリヤダイオー
ドに限定されず、例えばシリコントランジスタｌまたは
１１に対してそのベース、エミッタ問えん層電圧より低
いえん層電圧を有するダイオード、例えばゲルマニウム
ダイオードも用いることができる。またトランジスタ１
がＰＮＰ トランジスタの場合にも実施でき、その場合
はダイオード２はコレクタからエミッタに向けて、ダイ
オード６はエミッタからベースに向けて順方向に接続さ
れる。In the examples of FIGS. 4 and 5, the diode 6 connected between the base and the emitter is not necessarily limited to a Schottky-type rear diode. For example, the diode 6 connected between the base and the emitter is Diodes with low layer voltages, such as germanium diodes, can also be used. Also transistor 1
can also be implemented in the case of a PNP transistor, in which case diode 2 is connected in the forward direction from collector to emitter and diode 6 from emitter to base.
以上述べたように本発明はトランジスタのエミッタから
コレクター逆並列に高速ダイオードを接続シ、ベース、
エミッタ間に抵抗を接続する場合に、抵抗を通ずる′＃
Ｉｔｆｆ、によって増大するベース電流に基づくトラン
ジスタ寄生効果により高速ダイ ５−
オードを含めて全体としての逆回含時間が増加すること
を防止するため、ベース、エミッタ間の抵抗に直列にえ
ん層電圧の低いダイオードを接続してベース電流の増大
を防ぐもので、簡単な回路構成からなる半導体装置でＰ
ＷＭ方式によるモータ制御などに極めて有効に用いるこ
と−ができる。As described above, the present invention connects a high-speed diode in antiparallel from the emitter to the collector of the transistor.
When connecting a resistor between emitters, pass through the resistor'#
In order to prevent the overall reverse recapture time including the fast diode from increasing due to transistor parasitic effects due to the base current increasing due to This is a semiconductor device with a simple circuit configuration that connects a low-voltage diode to prevent an increase in base current.
It can be used extremely effectively for motor control using the WM method.
第１図はトランジスタに付属のダイオードおよび抵抗が
接続された半導体装置の回路図、第２図はそのような半
導体装置を用いるトランジスタインバータの回路図、第
３図は第１図の半導体装置におけるトランジスタ寄生効
果の説明図、第４図は本発明に基づく半導体装置の一実
施例の回路図、第５図は別の実施例の回路図である。
ｌｌ１ｌ・ トランジスタ、３，３１ 抵抗、６・・・
ダイオード。
υ、
イ（現（ｆＩ埋十山口 巖５．。
１、
６−Fig. 1 is a circuit diagram of a semiconductor device in which a diode and a resistor attached to a transistor are connected, Fig. 2 is a circuit diagram of a transistor inverter using such a semiconductor device, and Fig. 3 is a circuit diagram of a transistor in the semiconductor device of Fig. 1. An explanatory diagram of parasitic effects, FIG. 4 is a circuit diagram of one embodiment of a semiconductor device based on the present invention, and FIG. 5 is a circuit diagram of another embodiment. ll1l Transistor, 3, 31 Resistor, 6...
diode. υ, I (currently fI 1, 6-
Claims (1)
合に逆並列の高速度ダイオードを接続し−４４−ス、エ
ミッタ間に抵抗と、該抵抗に直列でベース、エミッタ接
合に並列であり、ベース、エミッタ、間のえん層電圧よ
り低いえん層電圧を有するダイオードとを接続してなる
ことを特徴とする半導体装置。 ２、特許請求の範囲第１項記載の装置に２いて、ダイオ
ードがショットキーバリヤダイオードであることを特徴
とする半導体装置。[Claims] 1) A high-speed diode is connected in antiparallel to the emitter junction between the collector and emitter of the transistor, a resistor is connected between the emitter, and a resistor is connected in series with the resistor and the base is connected in parallel to the emitter junction. 1. A semiconductor device comprising: a base, an emitter, and a diode having an end layer voltage lower than the end layer voltage between the base and the emitter. 2. A semiconductor device according to claim 1, wherein the diode is a Schottky barrier diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20863581A JPS58110072A (en) | 1981-12-23 | 1981-12-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20863581A JPS58110072A (en) | 1981-12-23 | 1981-12-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58110072A true JPS58110072A (en) | 1983-06-30 |
Family
ID=16559493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20863581A Pending JPS58110072A (en) | 1981-12-23 | 1981-12-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58110072A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221261A (en) * | 1985-07-16 | 1987-01-29 | エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア | Driving element |
| US4965657A (en) * | 1987-08-03 | 1990-10-23 | Hitachi Ltd. | Resin encapsulated semiconductor device |
| JP2010034312A (en) * | 2008-07-29 | 2010-02-12 | Rohm Co Ltd | Semiconductor device and manufacturing method therefor |
-
1981
- 1981-12-23 JP JP20863581A patent/JPS58110072A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221261A (en) * | 1985-07-16 | 1987-01-29 | エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア | Driving element |
| US4965657A (en) * | 1987-08-03 | 1990-10-23 | Hitachi Ltd. | Resin encapsulated semiconductor device |
| JP2010034312A (en) * | 2008-07-29 | 2010-02-12 | Rohm Co Ltd | Semiconductor device and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5469095A (en) | Bridge circuit for driving an inductive load with a shoot-through prevention circuit | |
| JPS6347012B2 (en) | ||
| US4125787A (en) | Semiconductor switch circuit | |
| JPH05850B2 (en) | ||
| JPS58110072A (en) | Semiconductor device | |
| US4013904A (en) | Darlington transistor switching circuit for reactive load | |
| JPH0313770Y2 (en) | ||
| JPS58220470A (en) | Semiconductor device | |
| JP2853278B2 (en) | Drive circuit | |
| JPH0767074B2 (en) | Output current drive circuit | |
| JP2854010B2 (en) | Semiconductor switch circuit | |
| JPH07141044A (en) | Terminal current limiting circuit for scsi interface | |
| JPH0158757B2 (en) | ||
| JPH0326679Y2 (en) | ||
| JPS58159384A (en) | Darlington photo-transistor | |
| JPS62216525A (en) | Drive circuit of power transistor for inverter | |
| JPS60106225A (en) | Switching circuit | |
| JPH04127613A (en) | Level conversion circuit | |
| JPS59183527A (en) | Base driving circuit of transistor | |
| JPS59126321A (en) | Multistage darlington transistor | |
| JPS5827697B2 (en) | transistor warmer | |
| JPS59153309A (en) | Power amplifier | |
| JPS58123211A (en) | Base circuit of transistor | |
| JPS60114007A (en) | Current limit circuit | |
| JPH0637615A (en) | Current switching type driving control circuit |