JPS58108090A - メモリ回路 - Google Patents

メモリ回路

Info

Publication number
JPS58108090A
JPS58108090A JP56205120A JP20512081A JPS58108090A JP S58108090 A JPS58108090 A JP S58108090A JP 56205120 A JP56205120 A JP 56205120A JP 20512081 A JP20512081 A JP 20512081A JP S58108090 A JPS58108090 A JP S58108090A
Authority
JP
Japan
Prior art keywords
circuit
memory cell
voltage
correction
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56205120A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129070B2 (enrdf_load_stackoverflow
Inventor
Takeshi Takeya
武谷　健
Hirotoshi Sawada
沢田　博俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56205120A priority Critical patent/JPS58108090A/ja
Publication of JPS58108090A publication Critical patent/JPS58108090A/ja
Publication of JPS6129070B2 publication Critical patent/JPS6129070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP56205120A 1981-12-21 1981-12-21 メモリ回路 Granted JPS58108090A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56205120A JPS58108090A (ja) 1981-12-21 1981-12-21 メモリ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205120A JPS58108090A (ja) 1981-12-21 1981-12-21 メモリ回路

Publications (2)

Publication Number Publication Date
JPS58108090A true JPS58108090A (ja) 1983-06-28
JPS6129070B2 JPS6129070B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=16501747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205120A Granted JPS58108090A (ja) 1981-12-21 1981-12-21 メモリ回路

Country Status (1)

Country Link
JP (1) JPS58108090A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6584026B2 (en) 2000-06-28 2003-06-24 Kabushiki Kaisha Toshiba Semiconductor integrated circuit capable of adjusting input offset voltage
JP2007280537A (ja) * 2006-04-07 2007-10-25 Toshiba Corp 半導体集積回路装置および半導体集積回路装置のトリミング方法
JP2011134427A (ja) * 2009-07-27 2011-07-07 Renesas Electronics Corp 半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6584026B2 (en) 2000-06-28 2003-06-24 Kabushiki Kaisha Toshiba Semiconductor integrated circuit capable of adjusting input offset voltage
JP2007280537A (ja) * 2006-04-07 2007-10-25 Toshiba Corp 半導体集積回路装置および半導体集積回路装置のトリミング方法
JP2011134427A (ja) * 2009-07-27 2011-07-07 Renesas Electronics Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS6129070B2 (enrdf_load_stackoverflow) 1986-07-04

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