JPS58108090A - メモリ回路 - Google Patents

メモリ回路

Info

Publication number
JPS58108090A
JPS58108090A JP56205120A JP20512081A JPS58108090A JP S58108090 A JPS58108090 A JP S58108090A JP 56205120 A JP56205120 A JP 56205120A JP 20512081 A JP20512081 A JP 20512081A JP S58108090 A JPS58108090 A JP S58108090A
Authority
JP
Japan
Prior art keywords
circuit
memory cell
voltage
correction
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56205120A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129070B2 (enrdf_load_stackoverflow
Inventor
Takeshi Takeya
武谷　健
Hirotoshi Sawada
沢田　博俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56205120A priority Critical patent/JPS58108090A/ja
Publication of JPS58108090A publication Critical patent/JPS58108090A/ja
Publication of JPS6129070B2 publication Critical patent/JPS6129070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP56205120A 1981-12-21 1981-12-21 メモリ回路 Granted JPS58108090A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56205120A JPS58108090A (ja) 1981-12-21 1981-12-21 メモリ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205120A JPS58108090A (ja) 1981-12-21 1981-12-21 メモリ回路

Publications (2)

Publication Number Publication Date
JPS58108090A true JPS58108090A (ja) 1983-06-28
JPS6129070B2 JPS6129070B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=16501747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205120A Granted JPS58108090A (ja) 1981-12-21 1981-12-21 メモリ回路

Country Status (1)

Country Link
JP (1) JPS58108090A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6584026B2 (en) 2000-06-28 2003-06-24 Kabushiki Kaisha Toshiba Semiconductor integrated circuit capable of adjusting input offset voltage
JP2007280537A (ja) * 2006-04-07 2007-10-25 Toshiba Corp 半導体集積回路装置および半導体集積回路装置のトリミング方法
JP2011134427A (ja) * 2009-07-27 2011-07-07 Renesas Electronics Corp 半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6584026B2 (en) 2000-06-28 2003-06-24 Kabushiki Kaisha Toshiba Semiconductor integrated circuit capable of adjusting input offset voltage
JP2007280537A (ja) * 2006-04-07 2007-10-25 Toshiba Corp 半導体集積回路装置および半導体集積回路装置のトリミング方法
JP2011134427A (ja) * 2009-07-27 2011-07-07 Renesas Electronics Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS6129070B2 (enrdf_load_stackoverflow) 1986-07-04

Similar Documents

Publication Publication Date Title
US7855583B2 (en) Sense amplifier for low voltage high speed sensing
US6657906B2 (en) Active termination circuit and method for controlling the impedance of external integrated circuit terminals
US8817554B2 (en) Sense amplifiers, memories, and apparatuses and methods for sensing a data state of a memory cell
KR100333266B1 (ko) 반도체 집적 회로
US7158431B2 (en) Single transistor sensing and double transistor sensing for flash memory
US12160231B2 (en) Apparatuses and methods for compensating for crosstalk noise at input receiver circuits
JPH0547179A (ja) 半導体装置
US8427887B2 (en) Devices, systems, and methods for a power generator system
US4926381A (en) Semiconductor memory circuit with sensing arrangement free from malfunction
JPS58108090A (ja) メモリ回路
JP3827534B2 (ja) 半導体記憶装置の基準電圧発生回路及びメモリ読出回路
KR100214462B1 (ko) 반도체메모리셀의 라이트 방법
JPH11134862A (ja) メモリセルのデータ内容評価のための回路装置
JPS58121194A (ja) メモリ回路
JPS58130486A (ja) 記憶回路
JP4047003B2 (ja) 半導体記憶装置
JPH06338192A (ja) 半導体メモリ
JPH0676590A (ja) 半導体メモリ装置
JPS6129497A (ja) 半導体記憶装置
JPS623518B2 (enrdf_load_stackoverflow)
JPH04113591A (ja) 半導体記憶装置
JPS623486A (ja) 半導体メモリセル
JPH06195982A (ja) 半導体記憶装置
JPH02201793A (ja) 定電圧発生用半導体集積回路装置
JPH03134895A (ja) 不揮発性半導体記憶装置