JPS58105497A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS58105497A JPS58105497A JP56204246A JP20424681A JPS58105497A JP S58105497 A JPS58105497 A JP S58105497A JP 56204246 A JP56204246 A JP 56204246A JP 20424681 A JP20424681 A JP 20424681A JP S58105497 A JPS58105497 A JP S58105497A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- output
- signal
- memory
- output terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- 230000015654 memory Effects 0.000 claims description 57
- 230000002950 deficient Effects 0.000 claims description 18
- 238000010586 diagram Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56204246A JPS58105497A (ja) | 1981-12-17 | 1981-12-17 | 半導体集積回路 |
US06/446,669 US4546455A (en) | 1981-12-17 | 1982-12-03 | Semiconductor device |
DE8282111666T DE3279868D1 (en) | 1981-12-17 | 1982-12-16 | Semiconductor memory device having a programming circuit |
EP82111666A EP0083031B1 (en) | 1981-12-17 | 1982-12-16 | Semiconductor memory device having a programming circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56204246A JPS58105497A (ja) | 1981-12-17 | 1981-12-17 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58105497A true JPS58105497A (ja) | 1983-06-23 |
JPH0219560B2 JPH0219560B2 (enrdf_load_stackoverflow) | 1990-05-02 |
Family
ID=16487267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56204246A Granted JPS58105497A (ja) | 1981-12-17 | 1981-12-17 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58105497A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03235297A (ja) * | 1990-02-13 | 1991-10-21 | Toshiba Corp | 半導体集積回路 |
WO2003007309A1 (en) * | 2001-07-11 | 2003-01-23 | Infineon Technologies Ag | Zero static power fuse cell for integrated circuits |
US6781437B2 (en) | 2001-07-11 | 2004-08-24 | Infineon Technologies Aktiengesellschaft | Zero static power programmable fuse cell for integrated circuits |
US6850451B2 (en) | 2001-07-11 | 2005-02-01 | Infineon Technologies Aktiengesellschaft | Zero static power fuse for integrated circuits |
KR100481179B1 (ko) * | 2002-09-10 | 2005-04-07 | 삼성전자주식회사 | 퓨즈를 구비한 회로 및 이를 이용한 반도체 장치 |
-
1981
- 1981-12-17 JP JP56204246A patent/JPS58105497A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03235297A (ja) * | 1990-02-13 | 1991-10-21 | Toshiba Corp | 半導体集積回路 |
WO2003007309A1 (en) * | 2001-07-11 | 2003-01-23 | Infineon Technologies Ag | Zero static power fuse cell for integrated circuits |
US6603344B2 (en) | 2001-07-11 | 2003-08-05 | Infineon Technologies Ag | Zero static power programmable fuse cell for integrated circuits |
US6781437B2 (en) | 2001-07-11 | 2004-08-24 | Infineon Technologies Aktiengesellschaft | Zero static power programmable fuse cell for integrated circuits |
US6850451B2 (en) | 2001-07-11 | 2005-02-01 | Infineon Technologies Aktiengesellschaft | Zero static power fuse for integrated circuits |
KR100481179B1 (ko) * | 2002-09-10 | 2005-04-07 | 삼성전자주식회사 | 퓨즈를 구비한 회로 및 이를 이용한 반도체 장치 |
Also Published As
Publication number | Publication date |
---|---|
JPH0219560B2 (enrdf_load_stackoverflow) | 1990-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5566107A (en) | Programmable circuit for enabling an associated circuit | |
EP0095721B1 (en) | Semiconductor memory device | |
US6125069A (en) | Semiconductor memory device with redundancy circuit having a reference resistance | |
JPH0528787A (ja) | 不揮発性半導体記憶装置の冗長回路 | |
US4998223A (en) | Programmable semiconductor memory apparatus | |
US8305822B2 (en) | Fuse circuit and semiconductor memory device including the same | |
US5300840A (en) | Redundancy fuse reading circuit for integrated memory | |
JPH0263279B2 (enrdf_load_stackoverflow) | ||
JPS59142800A (ja) | 半導体集積回路装置 | |
US4587639A (en) | Static semiconductor memory device incorporating redundancy memory cells | |
EP0090332A2 (en) | Semiconductor memory device | |
EP0419760B1 (en) | Zero standby power, radiation hardened, memory redundancy circuit | |
JPH01261845A (ja) | 冗長回路 | |
EP0195412B1 (en) | Integrated circuit with built-in indicator of internal repair | |
US4571706A (en) | Semiconductor memory device | |
JPS58105497A (ja) | 半導体集積回路 | |
EP0045610B1 (en) | A semiconductor read only memory device | |
JPH0438080B2 (enrdf_load_stackoverflow) | ||
EP0120034A4 (en) | REDUNDANCY OF A E? 2 PROM IN A MODULE. | |
US7796418B2 (en) | Programmable memory cell | |
JPS59124098A (ja) | 半導体メモリの冗長デコ−ダ | |
JP3103163B2 (ja) | 不揮発性半導体記憶回路 | |
EP0806771B1 (en) | UPROM cell for low voltage supply | |
JPS58105496A (ja) | 半導体集積回路 | |
JPH0676593A (ja) | 半導体メモリ装置 |