JPS58104016A - 成膜方法および成膜装置 - Google Patents

成膜方法および成膜装置

Info

Publication number
JPS58104016A
JPS58104016A JP20281381A JP20281381A JPS58104016A JP S58104016 A JPS58104016 A JP S58104016A JP 20281381 A JP20281381 A JP 20281381A JP 20281381 A JP20281381 A JP 20281381A JP S58104016 A JPS58104016 A JP S58104016A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
film
segment
electric current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20281381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0250195B2 (cs
Inventor
Katsumi Suzuki
克己 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP20281381A priority Critical patent/JPS58104016A/ja
Publication of JPS58104016A publication Critical patent/JPS58104016A/ja
Publication of JPH0250195B2 publication Critical patent/JPH0250195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP20281381A 1981-12-16 1981-12-16 成膜方法および成膜装置 Granted JPS58104016A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20281381A JPS58104016A (ja) 1981-12-16 1981-12-16 成膜方法および成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20281381A JPS58104016A (ja) 1981-12-16 1981-12-16 成膜方法および成膜装置

Publications (2)

Publication Number Publication Date
JPS58104016A true JPS58104016A (ja) 1983-06-21
JPH0250195B2 JPH0250195B2 (cs) 1990-11-01

Family

ID=16463621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20281381A Granted JPS58104016A (ja) 1981-12-16 1981-12-16 成膜方法および成膜装置

Country Status (1)

Country Link
JP (1) JPS58104016A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004083486A1 (ja) * 1993-03-23 2004-09-30 Atsushi Yamagami 超短波を用いたプラズマcvd法及び該プラズマcvd装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143170A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Condenser type gas plasma treating apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143170A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Condenser type gas plasma treating apparatus

Also Published As

Publication number Publication date
JPH0250195B2 (cs) 1990-11-01

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