JPS5798188A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5798188A
JPS5798188A JP55176712A JP17671280A JPS5798188A JP S5798188 A JPS5798188 A JP S5798188A JP 55176712 A JP55176712 A JP 55176712A JP 17671280 A JP17671280 A JP 17671280A JP S5798188 A JPS5798188 A JP S5798188A
Authority
JP
Japan
Prior art keywords
memory cell
subarrays
plural
subarray
annexted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55176712A
Other languages
Japanese (ja)
Inventor
Koichiro Masuko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55176712A priority Critical patent/JPS5798188A/en
Publication of JPS5798188A publication Critical patent/JPS5798188A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices

Abstract

PURPOSE:To reduce the power consumption, and also to decrease the soft error rate due to alpha rays, by selecting only a part of plural subarrays of a memory cell, and activating only a sense refresh amplifier annexted to side subarray. CONSTITUTION:Plural memory cells are divided into arrays and subarrays MCA1a, MCA2a, MCA1b and MCA2b of a dynamic RAM, placed and constituted in the form of a matrix array, a part of plural subarrays can be selected in accordance with external address signals AO-AN, at the time of read-out and write operations of the memory cell. According to this constitution, only a memory cell in the selected subarray is accessed, and only that which is annexted to the selected subarray, in sense refresh amplifiers SAa, SAb is activated, therefore, the power consumption is reduced and also the soft error rate is decreased.
JP55176712A 1980-12-11 1980-12-11 Memory circuit Pending JPS5798188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176712A JPS5798188A (en) 1980-12-11 1980-12-11 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176712A JPS5798188A (en) 1980-12-11 1980-12-11 Memory circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62102521A Division JPS6387695A (en) 1987-04-24 1987-04-24 Memory circuit

Publications (1)

Publication Number Publication Date
JPS5798188A true JPS5798188A (en) 1982-06-18

Family

ID=16018433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176712A Pending JPS5798188A (en) 1980-12-11 1980-12-11 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5798188A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147884A (en) * 1982-02-26 1983-09-02 Toshiba Corp Dynamic type semiconductor storage device
JPS62231495A (en) * 1986-03-31 1987-10-12 Toshiba Corp Semiconductor device
JPS632198A (en) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp Dynamic ram

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55135392A (en) * 1979-04-04 1980-10-22 Nec Corp Memory circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55135392A (en) * 1979-04-04 1980-10-22 Nec Corp Memory circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147884A (en) * 1982-02-26 1983-09-02 Toshiba Corp Dynamic type semiconductor storage device
JPS62231495A (en) * 1986-03-31 1987-10-12 Toshiba Corp Semiconductor device
JPH0522997B2 (en) * 1986-03-31 1993-03-31 Tokyo Shibaura Electric Co
JPS632198A (en) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp Dynamic ram

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