JPS5796578A - Photoelectric type variable resistor - Google Patents

Photoelectric type variable resistor

Info

Publication number
JPS5796578A
JPS5796578A JP17277180A JP17277180A JPS5796578A JP S5796578 A JPS5796578 A JP S5796578A JP 17277180 A JP17277180 A JP 17277180A JP 17277180 A JP17277180 A JP 17277180A JP S5796578 A JPS5796578 A JP S5796578A
Authority
JP
Japan
Prior art keywords
film
electrode
resistance
photoconductive
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17277180A
Other languages
Japanese (ja)
Inventor
Masuji Sato
Minoru Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17277180A priority Critical patent/JPS5796578A/en
Publication of JPS5796578A publication Critical patent/JPS5796578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H01L31/164—Optical potentiometers

Abstract

PURPOSE:To attain excellent current division by mounting an electrode, which is connected to both a photoconductive film and a resistance film and covers a side surface of the photoconductive film, at the one ends of both films laminated, connecting an element with another electrode connected to the both films in series at the other ends and emitting output from the middle. CONSTITUTION:The photoconductive film 11 and the resistance film 12 are laminated, and the electrode film 13 contacting with the one ends of the photoconductive film 11 and the resistance film 12 is formed. The electrode film 14 extends from the electrode film 13, and contacts with at least the whole side surface of the photoconductive film 11. The electrode film 15 is contacted with the other ends of the photoconductive film 11 and the resistance film 12. Two of such resistance elements are connected in series, an input terminal 16 at the hot.end side is mounted to one electrode film 13 and an input terminal 17 at the cold.end side to the other electrode film 15, and an output terminal 18 is attached from a connecting intermediate section. Accordingly, the ratio of voltage division to shunt is enlarged, and equivalent brush resistance can be brought to zero.
JP17277180A 1980-12-08 1980-12-08 Photoelectric type variable resistor Pending JPS5796578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17277180A JPS5796578A (en) 1980-12-08 1980-12-08 Photoelectric type variable resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17277180A JPS5796578A (en) 1980-12-08 1980-12-08 Photoelectric type variable resistor

Publications (1)

Publication Number Publication Date
JPS5796578A true JPS5796578A (en) 1982-06-15

Family

ID=15948023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17277180A Pending JPS5796578A (en) 1980-12-08 1980-12-08 Photoelectric type variable resistor

Country Status (1)

Country Link
JP (1) JPS5796578A (en)

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