JPS567478A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS567478A
JPS567478A JP8381079A JP8381079A JPS567478A JP S567478 A JPS567478 A JP S567478A JP 8381079 A JP8381079 A JP 8381079A JP 8381079 A JP8381079 A JP 8381079A JP S567478 A JPS567478 A JP S567478A
Authority
JP
Japan
Prior art keywords
electrodes
substrate
providing
charge transfer
tension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8381079A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8381079A priority Critical patent/JPS567478A/en
Publication of JPS567478A publication Critical patent/JPS567478A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To simplify the construction of the subject device by providing a plurality of transfer electrodes at a suitable interval through insulating films on a semicnductor substrate, and applying higer voltages to electrodes as they are positioned toward the more rear positions when reverse conductive type regions are formed in the substrate between these electrodes to obtain CCD. CONSTITUTION:A charge transfer device is constituted by a CCD element A, a driver part B and a shift register 10 which is a driving part. The element A of these components is cnstituted by providing a plurality of transfer electrodes G1-G6 on a P-type semiconductor substrate 101 through an insulating member 102, and N- type regions F1-F6 are provided within the substrate 101 between these electrodes, input and output diodes S and D being arranged at the outsides. By this organization, in order to drive these electrodes G1-G6, a potential dividing circuit formed by connecting in series resistors 91-96 in the driver part B, and low-tension and high-tension terminals 8 and 9 are connected to both ends of the circuit. This potential dividing voltage is successively applied to the electrodes by increasing the same as they come to the more rear position.
JP8381079A 1979-06-29 1979-06-29 Charge transfer device Pending JPS567478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8381079A JPS567478A (en) 1979-06-29 1979-06-29 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8381079A JPS567478A (en) 1979-06-29 1979-06-29 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS567478A true JPS567478A (en) 1981-01-26

Family

ID=13813016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8381079A Pending JPS567478A (en) 1979-06-29 1979-06-29 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS567478A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665219U (en) * 1993-02-13 1994-09-13 鐘紡株式会社 Packaging box

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665219U (en) * 1993-02-13 1994-09-13 鐘紡株式会社 Packaging box

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