JPS57201090A - Optical variable resistor - Google Patents

Optical variable resistor

Info

Publication number
JPS57201090A
JPS57201090A JP8652281A JP8652281A JPS57201090A JP S57201090 A JPS57201090 A JP S57201090A JP 8652281 A JP8652281 A JP 8652281A JP 8652281 A JP8652281 A JP 8652281A JP S57201090 A JPS57201090 A JP S57201090A
Authority
JP
Japan
Prior art keywords
film
resistance
photoelectric
variable resistor
conversion elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8652281A
Other languages
Japanese (ja)
Inventor
Masuji Sato
Fumiaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8652281A priority Critical patent/JPS57201090A/en
Publication of JPS57201090A publication Critical patent/JPS57201090A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H01L31/164—Optical potentiometers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To enlarge resistance variations, by arranging a photo-conducive film on both sides of a resistance film, and connecting in parallel photoelectric-conversion elements are so constituted that one electrode terminal is taken out of the resistance film and that the other out of the electrode metal film. CONSTITUTION:A photo-condductive film 2 and an electrode metal film 4 are arranged on both sides of resistance film 1. Photoelectric-conversion elements are constituted by taking electrode terminals out of the resistance film 1 and the electrode metal film 4. The photoelectric-conversion elements are connected in parallel. This brings an optical variable resistor with a wide range of resistance variations.
JP8652281A 1981-06-05 1981-06-05 Optical variable resistor Pending JPS57201090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8652281A JPS57201090A (en) 1981-06-05 1981-06-05 Optical variable resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8652281A JPS57201090A (en) 1981-06-05 1981-06-05 Optical variable resistor

Publications (1)

Publication Number Publication Date
JPS57201090A true JPS57201090A (en) 1982-12-09

Family

ID=13889315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8652281A Pending JPS57201090A (en) 1981-06-05 1981-06-05 Optical variable resistor

Country Status (1)

Country Link
JP (1) JPS57201090A (en)

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