JPS5792880A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS5792880A
JPS5792880A JP16907580A JP16907580A JPS5792880A JP S5792880 A JPS5792880 A JP S5792880A JP 16907580 A JP16907580 A JP 16907580A JP 16907580 A JP16907580 A JP 16907580A JP S5792880 A JPS5792880 A JP S5792880A
Authority
JP
Japan
Prior art keywords
layer
type
contact
substrate
activator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16907580A
Other languages
English (en)
Inventor
Hideto Furuyama
Junichi Kinoshita
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16907580A priority Critical patent/JPS5792880A/ja
Publication of JPS5792880A publication Critical patent/JPS5792880A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP16907580A 1980-12-02 1980-12-02 Light emitting diode Pending JPS5792880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16907580A JPS5792880A (en) 1980-12-02 1980-12-02 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16907580A JPS5792880A (en) 1980-12-02 1980-12-02 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS5792880A true JPS5792880A (en) 1982-06-09

Family

ID=15879856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16907580A Pending JPS5792880A (en) 1980-12-02 1980-12-02 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS5792880A (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same
JPS5234685A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Semiconductor luminous element and its manufacturing process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same
JPS5234685A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Semiconductor luminous element and its manufacturing process

Similar Documents

Publication Publication Date Title
GB1478152A (en) Light emissive diode
JPS55102282A (en) Light emitting diode and method of fabricating the same
FR2354638A1 (fr) Diodes photoemettrices a haut rendement
JPS5792880A (en) Light emitting diode
JPS57147292A (en) Semiconductor laser and manufacture thereof
JPS6430277A (en) Light convergent type light-emitting device
JPS577984A (en) Semiconductor light emitting device
JPS6484758A (en) Light-emitting diode
JPS56142691A (en) Semiconductor light emitting device
JPS57162382A (en) Semiconductor laser
JPS5779683A (en) Narrow spectrum type light emitting diode
JPS647667A (en) Light-emitting diode of edge emission type
JPS572590A (en) Inp-ingaasp semiconductor light emitting device and manufacture thereof
JPS57139981A (en) Semiconductor light emitting device
JPS5713780A (en) Manufacture of photodetector
JPS55123182A (en) Light emitting diode
JPS5642393A (en) Semiconductor laser
JPS6459969A (en) Semiconductor light emitting diode
JPS57166088A (en) Electrode of luminus diode
JPS57192092A (en) Manufacture of laser diode
JPS6476784A (en) Edge light-emitting diode
JPS57184262A (en) Light emission diode
JPS5796580A (en) Surface light emitting type light emitting diode
JPS5730394A (en) Semiconductor light emitting device and manufacture thereof
JPS57112090A (en) Semiconductor laser